FOD A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing

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1 FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Features High noise immunity characterized by common mode rejection kv / µs Minimum Common Mode Rejection (Vcm = 00 V peak ). A peak output current driving capability for most 00 V / 0 A IGBT Optically isolated fault sensing feedback Active Miller clamp to shut off the IGBT during high dv/dt without needing a negative supply voltage Soft IGBT turn-off Built-in IGBT protection Desaturation detection Under-voltage lock out (UVLO) protection Wide supply voltage range from V to 0 V Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output). V / V, CMOS/TTL-compatible inputs High Speed 0 ns max. propagation delay over full operating temperature range Extended industrial temperate range, -0 C to 00 C temperature range Safety and regulatory approvals UL,, V RMS for min. DIN EN/IEC 0--,, V peak working insulation voltage, 000 V peak transient isolation voltage ratings R DS(ON) of Ω (typ.) offers lower power dissipation User configurable: inverting, non-inverting, auto-reset, auto-shutdown mm creepage and clearance distances Applications Industrial inverter Induction heating Isolated IGBT drive Description October 0 The FOD is an advanced. A output current IGBT drive optocoupler capable of driving most 00 V / 0 A IGBTs. It is ideally suited for fast-switching driving of power IGBTs and MOSFETs used in motor control inverter applications and high-performance power systems. It consists of an integrated gate drive optocoupler featuring low R DS(ON) CMOS transistors to drive the IGBT from rail to rail and an integrated highspeed isolated feedback for fault sensing. The FOD has an active Miller clamp fuction to shut off the IGBT during a high dv/dt situation without the need of a negative supply voltage. It offers critical protection features necessary for preventing fault conditions that lead to destructive thermal runaway of IGBTs. It utilizes ON s proprietary Optoplanar coplanar packaging technology and optimized IC design to achieve high noise immunity, characterized by high common mode rejection and power supply rejection specifications. The device is housed in a compact -pin small outline plastic package that meets the mm creepage and clearance requirements. FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

2 Truth Table V IN ( ) UVLO *UT is always LOW with clamp being active (gate voltage < V above S ). Pin Definitions Detected? UT * X X Active X X LOW X X X Yes LOW LOW LOW X X X X LOW X HIGH X X X LOW HIGH LOW Not Active No HIGH HIGH Pin # Name Description Non-inverting gate drive control input V IN Inverting gate drive control input Positive input supply voltage ( V to. V) GND Input ground Fault reset input Fault output V LED LED anode (must be left unconnected) V LED- LED cathode (must be connected to ground) S Output supply voltage (negative) 0 Active Miller clamp supply voltage Gate drive output voltage Source of pull-up PMOS transistor Positive output supply voltage Desaturation voltage input V LED LED anode (must be left unconnected) Output supply voltage / IGBT emitter V IN GND V LED V LED- * 0 V LED S S FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

3 Block Diagram V IN GND V LED Input IC Fault Shield V LED LED LED Fault Sense Optocoupler Gate Drive Optocoupler V LED Shield Driver Output IC UVLO Miller Clamp S 0 S FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

4 Safety and Insulation Ratings As per DIN EN/IEC 0--. This optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 00/. Table For Rated Mains Voltage < 0 Vrms For Rated Mains Voltage < 00 Vrms For Rated Mains Voltage < 0 Vrms For Rated Mains Voltage < 00 Vrms For Rated Mains Voltage < 000 Vrms Climatic Classification 0/00/ Pollution Degree (DIN VDE 00/.) CTI Comparative Tracking Index V PR Input to Output Test Voltage, Method b, V IORM x. = V PR, 00 % Production Test with t m = s, Partial Discharge < pc Input to Output Test Voltage, Method a, V IORM x. = V PR, Type and Sample Test with t m = 0 s, Partial Discharge < pc IIV IIV IIV IIV IIII, V peak, V peak V IORM Maximum Working Insulation Voltage, V peak V IOTM Highest Allowable Over Voltage,000 V peak External Creepage mm External Clearance mm Insulation Thickness 0. mm Safety Limit Values Maximum Values Allowed in the Event of a Failure T Case Case Temperature 0 C P S,INPUT Input Power 00 mw P S,OUTPUT Output Power 00 mw R IO Insulation Resistance at T S, V IO = 00 V 0 Ω FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

5 Absolute Maximum Ratings ( = ºC unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Units T STG Storage Temperature -0 to ºC T OPR Operating Temperature -0 to 00 ºC T J Junction Temperature -0 to ºC T SOL Lead Wave Solder Temperature (no solder immersion) Refer to page for reflow temperature profile. 0 for 0 s ºC I Fault Output Current ma I O(PEAK) Peak Output Current () A S Negative Output Supply Voltage () 0 to V Positive Output Supply Voltage -0. to ( S ) V (peak) Gate Drive Output Voltage -0. to V S Output Supply Voltage -0. to V Positive Input Supply Voltage -0. to V, V IN- and V Input Voltages -0. to V V Fault Pin Voltage -0. to V Source of Pull-up PMOS Transistor Voltage S. to V V Voltage to V I CLAMP Peaking Clamping Sinking Current. A Miller Clamping Voltage -0. to V PD I Input Power Dissipation ()() 00 mw PD O Output Power Dissipation ()() 00 mw Notes:. Maximum pulse width = 0 µs, maximum duty cycle = 0. %.. This negative output supply voltage is optional. It s only needed when negative gate drive is implemented. A schottky diode is recommended to be connected between and S to protect against a reverse voltage greater than 0. V. Refer to application information,. Active Miller Clamp Function on page.. No derating required across temperature range.. Derate linearly above C, free air temperature at a rate of 0. mw/ C. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

6 Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. ON does not recommend exceeding them or designing to absolute maximum ratings. Symbol Parameter Min. Max. Unit Ambient Operating Temperature ºC Input Supply Voltage (). V S Total Output Supply Voltage 0 V S Negative Output Supply Voltage 0 V Positive Output Supply Voltage () 0 ( S ) V Source of Pull-up PMOS Transistor Voltage S. V Note:. During power up or down, it is important to ensure that VIN remains LOW until both the input and output supply voltages reach the proper recommended operating voltage to avoid any momentary instability at the output state. Refer to Time to Good Power section on page. Isolation Characteristics Apply over all recommended conditions, typical value is measured at = ºC Symbol Parameter Conditions Min. Typ. Max. Units V ISO Input-Output Isolation Voltage = ºC, R.H.< 0 %, t =.0 min,, V RMS I I-O ð 0 µa, 0 Hz ()()() R ISO Isolation Resistance V I-O = 00 V () 0 Ω C ISO Isolation Capacitance V I-O = 0 V, freq =.0 MHz () pf Notes:. Device is considered a two terminal device: pins to are shorted together and pins to are shorted together.., V RMS for -minute duration is equivalent to,0 V RMS for -second duration.. The Input-Output Isolation Voltage is a dielectric voltage rating as per UL. It should not be regarded as an input-output continuous voltage rating. For the continuous working voltage rating, refer to the equipment level safety specification or DIN EN/IEC 0-- Safety and Insulation Ratings Table on page. Electrical Characteristics Apply over all recommended conditions; typical value is measured at, S = 0 V, S = 0 V, = C unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Units Figure L, V IN-L, V L Logic Low Input Voltages 0. V H, Logic High Input Voltages.0 V V IN-H, V H I INL, I IN-L, I L Logic Low Input Currents V IN = 0. V ma I L I H Logic Low Output Current Logic High Output Current V = 0. V.0.0 ma, V = µa FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

7 Electrical Characteristics (Continued) Apply over all recommended conditions; typical value is measured at, S = 0 V, S = 0 V, = C unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Units Figure I OH High Level Output Current = V - -. A,, = V (0) -. A I OL Low Level Output Current = S V A, I OLF Low Level Output Current During Fault Condition H High Level Output Voltage I O = 00 ma ()()() = S V (). A S = V 0 0 ma,.0 V 0. V V,, L Low Level Output Voltage I O = 00 ma V,, I DDH High Level Supply Current = =. V, V IN = 0 V I DDL Low Level Supply Current = V IN- = 0 V, =. V I DDH I DDL High Level Output Supply Current Low Level Output Supply Current ma, ma = Open (). ma 0,, 0 = Open.. ma I SH High Level Source Current I O = 0 ma 0.. ma 0 I SL Low Level Source Current I O = 0 ma 0.. ma 0 I EL Low Level Supply Current ma, 0 I EH High Level Supply Current ma I CHG I DSCHG Blanking Capacitor Charge Current Blanking Capacitor Discharge Current V = V ()() ma, V = V 0 ma V UVLO Under-Voltage Lockout > V at C 0... V,, V UVLO- Threshold () < V at C. 0.. V UVLO HYS Under-Voltage Lockout Threshold Hysteresis V Threshold () > V UVLO-, < V _ THRES I CLAMPL At C 0..0 V.0.. V, Clamping Threshold Voltage. V, Clamp Low Level Sinking Current = S. V 0.. A, Notes: 0. Maximum pulse width = 0 µs, maximum duty cycle = 0. %.. Maximum pulse width =. ms, maximum duty cycle =. %.. H is measured with the DC load current in this testing (maximum pulse width = ms, maximum duty cycle = 0 %). When driving capacitive loads, H approaches V DD as I OH approaches zero units.. Positive output supply voltage ( ) should be at least V. This ensures adequate margin in excess of the maximum under-voltage lockout threshold V UVLO of. V.. When > V UVLO and output state of the FOD is allowed to go HIGH, the detection feature is active and provides the primary source of IGBT protection. UVLO is needed to ensure detection is functional. FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

8 . The blanking time, t BLANK, is adjustable by an external capacitor (C BLANK ) where t BLANK = C BLANK * (V / I CHG ). Switching Characteristics Apply over all recommended conditions; typical value is measured at, S = 0 V, S = 0 V, = C unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Units Figure t PHL t PLH PWD PDD Skew Propagation Delay Time to Logic Low Output () Rg = 0Ω, Cg = 0 nf, 0 0 ns,,, 0,,,, Propagation Delay Time to f = 0 khz, Logic High Output () Duty Cycle = 0 % () 0 0 ns Pulse Width Distortion, 0 00 ns t PHL t PLH () Propagation Delay Difference Between Any Two Parts or Channels, ( t PHL t PLH ) (0) 0 0 ns t R Output Rise Time (0 % 0 %) ns, t F Output Fall Time (0 % 0 %) ns t (0 %) t (0 %) t () t (LOW) t () Sense to 0 % Delay () Rg = 0Ω, Cg = 0 nf, S = 0 V 0 00 ns, Sense to 0 %..0 µs,, Delay (), Sense to Low Level..0 µs,, Signal Delay () Sense to Low 0 ns Propagation Delay () to High Level 0 µs,, Signal Delay () t (MUTE) Input Mute 0 µs PW Signal Pulse Width. µs t UVLO ON UVLO Turn On Delay () = 0 V in µs, t UVLO OFF UVLO Turn Off Delay ().0ms Ramp µs t GP Time to Good Power () = 0 to 0 V in 0 µs Ramp CM H Common Mode Transient Immunity at Output High CM L Common Mode Transient Immunity at Output Low = ºC,, = V, S = Ground, V CM = 00 V peak () = ºC,, = V, S = Ground, V CM = 00 V peak (). µs 0,, 0 kv/µs, 0 kv/µs, 0 Notes:. This load condition approximates the gate load of a 00 V / 0 A IGBT.. t PHL propagation delay is measured from the 0 % level on the falling edge of the input pulse (, V IN- ) to the 0 % level of the falling edge of the signal. Refer to Figure.. t PHL propagation delay is measured from the 0 % level on the rising edge of the input pulse (, V IN- ) to the 0 % level of the rising edge of the signal. Refer to Figure.. PWD is defined as t PHL t PLH for any given device. FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

9 0. The difference between t PHL and t PLH between any two FOD parts under same operating conditions, with equal loads.. This is the amount of time the threshold must be exceeded before begins to go LOW. This is supply voltage dependent. Refer to Figure.. This is the amount of time from when the threshold is exceeded, until the output goes LOW. Refer to Figure.. This is the amount of time the threshold must be exceeded before begins to go LOW and the output to go LOW. Refer to Figure.. This is the amount of time from when is asserted LOW, until output goes HIGH. Refer to Figure.. t UVLO ON UVLO turn-on delay is measured from V UVLO threshold voltage of the output supply voltage ( ) to the V level of the rising edge of the signal.. t UVLO OFF UVLO turn-off delay is measured from V UVLO threshold voltage of the output supply voltage ( ) to the V level of the falling edge of the signal.. t GP time to good power is measured from. V level of the rising edge of the output supply voltage ( ) to the V level of the rising edge of the signal.. Common mode transient immunity at output HIGH state is the maximum tolerable negative dvcm / dt on the trailing edge of the common mode pulse, V CM, to assure that the output remains in HIGH state (i.e., > V or > V)..Common mode transient immunity at output LOW state is the maximum positive tolerable dvcm / dt on the leading edge of the common mode pulse, V CM, to assure that the output remains in a LOW state (i.e., <.0 V or < 0. V). FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

10 Typical Performance Characteristics I L - CURRENT (ma) I LED = 0 ma = C 0 0 V L - VOLTAGE (V) Figure. Logic Low Output Current I L) vs. Logic Low Output Voltage (V L) H - - HIGH LEVEL OUTPUT I OL - LOW LEVEL OUTPUT CURRENT (A) VOLTAGE DROP (V) Figure. Low Level Output Current (I OL) vs. Temperature = 0 V = 0 V = S V = S V I O = -0 µa I O = -00 ma Figure. High Level Output Voltage Drop (H- V DD) vs. Temperature I OLF - LOW LEVEL OUTPUT CURRENT I OH - HIGH LEVEL OUTPUT CURRENT (A) DURING CONDITION (ma) = 0 V = - V = - V Figure. High Level Output Current (I OH) vs. Temperature 0 00 = C = -0 C = 00 C = 0 V OUTPUT VOLTAGE (V) Figure. Low Level Output Current During Fault Condition (I OLF) vs. Output Voltage (L) L - LOW LEVEL OUTPUT VOLTAGE (V) = 0 V I O = 00 ma = 0 V Figure. Low Level Output Voltage (L) vs. Temperature FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev. 0

11 Typical Performance Characteristics (Continued) H - HIGH LEVEL OUTPUT VOLTAGE (V) Figure. High Level Output Voltage (H) vs. High Level Output Current (I OH) I DD - SUPPLY CURRENT (ma) I DD - OUTPUT SUPPLY CURRENT (ma) = 0 V 00 C C Figure. Supply Current (I DD) vs. Temperature = -0 C I OH - HIGH LEVEL OUTPUT CURRENT (A) = 0 V (I DDL ) / V (I DDH ) = 0 V (I DDL ) / V (I DDH ) I DDH I DDL I DDL I DDH OUTPUT SUPPLY VOLTAGE (V) Figure. Output Supply Current (I DD) vs. Output Supply Voltage () I CHG - BLANKING CAPACITOR I DD - OUTPUT SUPPLY CURRENT (ma) CHARGING CURRENT (ma) L - LOW LEVEL OUTPUT VOLTAGE (V) = 0 V = 0 V = 00 C C -0 C I OL - LOW LEVEL OUTPUT CURRENT (A) Figure. Low Level Output Voltage (L) vs. Low Level Output Current (I OL) = 0 V = 0 V (I DDL ) / V (I DDH ) Figure. Output Supply Current (I DD) vs. Temperature = 0 V V = 0 to V I DDL I DDH Figure. Blanking Capacitor Charge Current (I CHG) vs. Temperature FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

12 Typical Performance Characteristics (Continued) V UVLO - UNDER VOLTAGE LOCKOUT I E - SUPPLY CURRENT (ma) t P - PROPAGATION DELAY (µs) THRESHOLD (V) = 0 V = 0 V (I EL ) / V (I EH ) Figure. Supply Current (I E) vs. Temperature Figure. Under Voltage Lockout Threshold (V UVLO) vs. Temperature Figure. Propagation Delay (t P) vs. Temperature I EH I EL = 0 V V UVLO V UVLO- t PLH f = 0 KHz 0% Duty Cycle R L = 0 Ω C L = 0 nf t PHL I S - SOURCE CURRENT (ma) V - THRESHOLD (V) t P - PROPAGATION DELAY (µs) = 0 V I O - OUTPUT CURRENT (ma) Figure. Source Current (I S) vs. Output Current (I O) = 0 V Figure. Threshold (V ) vs. Temperature Figure. Propagation Delay (t P) vs. Supply Voltage () -0 C C 00 C f = 0 KHz 0% Duty Cycle R L = 0 Ω C L = 0 nf t PLH t PHL - SUPPLY VOLTAGE (V) FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

13 Typical Performance Characteristics (Continued) t PLH - PROPAGATION DELAY (µs) = 0 V f = 0 KHz 0% Duty Cycle R L = 0 Ω C L = 0 nf =. V Figure. Propagation Delay Time to Logic High Output (t PLH) vs. Temperature t P - PROPAGATION DELAY (µs) t (0%) - SENSE to 0% DELAY (µs) Figure. Propagation Delay (t P) vs. Load Capacitance (C L) =. V =.0 V f = 0 KHz 0% Duty Cycle R L = 0 Ω = 0 V = 0 V R L = 0Ω C L = 0 nf Figure. Sense to 0% Delay (t (0%)) vs. Temperature t PLH t PHL C L - LOAD CAPACITANCE (nf) t PHL - PROPAGATION DELAY (µs) t P - PROPAGATION DELAY (µs) t (0%) - SENSE to 0% DELAY (µs) = 0 V f = 0 KHz 0% Duty Cycle R L = 0 Ω C L = 0 nf =. V Figure. Propagation Delay Time to Logic Low Output (t PHL) vs. Temperature = 0 V Figure. Propagation Delay (t P) vs. Load Resistance (R L) =. V =.0 V f = 0 KHz 0% Duty Cycle C L = 0 nf R L = 0Ω C L = 0 nf Figure. Sense to 0% Delay (t (0%)) vs. Temperature t PLH t PHL R L - LOAD RESISTANCE (Ω) = 0 V = V FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

14 Typical Performance Characteristics (Continued) t () - SENSE to LOW LEVEL t UVLO - UNDER VOLTAGE LOCKOUT SIGNAL DELAY (µs) t (0%) - SENSE to 0% DELAY (µs) = 0 V R L = 0Ω C L = 0 nf = 0 V = V Figure. Sense to Low Level Signal Delay (t ()) vs. Temperature THRESHOLD DELAY (µs) Figure. Sense to 0% Delay (t (0%)) vs. Load Resistance (R L) C L = 0 nf = 0 V f = 0Hz 0% Duty Cycle = 0 V = V R L - LOAD RESISTANCE (Ω) t UVLO ON t UVLO OFF Figure. Under Voltage Lockout Threshold Delay ( UVLO) vs. Temperature t () - TO HIGH LEVEL t (0%) - SENSE to 0% DELAY (µs) SIGNAL DELAY (µs) t GP - TIME TO GOOD POWER (µs) 0 R L = 0Ω = 0 V = V C L - LOAD CAPACITANCE (nf) Figure. Sense to 0% Delay (t (0%)) vs. Load Capacitance (C L) = 0 V = R L = 0 Ω C L = 0 nf =. V =.0 V =. V Figure. to High Level Signal Delay (t ()) vs. Temperature f = 0Hz 0% Duty Cycle SUPPLY VOLTAGE (V) Figure. Time to Good Power (T GP) vs. Supply Voltage () FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

15 Typical Performance Characteristics (Continued) t GP - TIME TO GOOD POWER (µs) CLAMP PIN THRESHOLD VOLTAGE (V) = 0 V f = 0Hz 0% Duty Cycle Figure. Time to Good Power ( GP) vs. Temperature VSS = 0 V = 0 V Figure. Clamping Threshold Voltage ( ) vs. Temperature I CLAMP CLAMP LOW LEVEL SINKING CURRENT (A) I CLAMP CLAMP LOW LEVEL SINKING CURRENT (A) VSS = 0 V =. V TEMPERATURE ( C) Figure. Clamp Low Level Sinking Current (I CLAMPL ) vs. Temperature VSS = 0 V = 0 V CLAMP VOLTAGE (V) Figure. Clamp Low Level Sinking Current (I CLAMPL ) vs. Clamp Voltage ( ) FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

16 Test Circuits Pulse Gen PW = 0 µs Period = ms Pulse Gen PW =. ms Period = ms V V I V = 0. V for I L V =.0 V for I H V IN GND V LED V LED- * V kω V kω FOD V IN GND V LED V LED- * V IN GND V LED V LED- * FOD FOD V LED S V LED S V LED S A 0 ma Switch A closed for I L Switch A opened for I H µf µf µf µf 0 V 0 V FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

17 Test Circuits (Continued) V Switch A for H test Switch B for L test V IN GND V LED V LED- * V A kω B Switch A for I DDH test Switch B for I DDL test V I DD Switch A for I DDH, I SH and I EH test Switch B for I DDL, I SL and I EL test A A B B V IN GND V LED V LED- * V IN GND V LED V LED- * FOD FOD FOD V LED S V LED S V LED S I E I DD I S 00 ma pulsed B A 00 ma pulsed 0 V 0 V FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

18 Test Circuits (Continued) V IN GND V LED V LED- * V V kω F = 0 khz DC = 0 % V FOD V IN GND V LED V LED- * V IN GND FOD FOD V LED S V LED S 0 0 V I CHG/DSCHG I OLF kω RL V LED 0 0 nf V LED- * S V LED RL V RL 0 nf V CL 0 V DC Sweep 0 to V (00 steps) Parameter Analyzer 0 V FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

19 Test Circuits (Continued) LOW to HIGH V V IN GND FOD kω RL V V LED 0 0 nf V LED- * S V LED V V IN GND 00 pf kω RL V LED 0 V 0 nf V LED- * S V kω V IN GND V LED V LED- * FOD FOD V LED V LED S 0 Strobe V 0 V 0 V ** **.0 ms ramp for t UVLO 0 µs ramp for t GP FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

20 Test Circuits (Continued) FOD V kω 00 pf V IN GND V LED V LED- * Floating GND V CM V LED 0 S FOD V V IN kω 00 pf GND V LED V LED- * Floating GND V CM V LED S 0 V V SCOPE 0 Ω 0 nf SCOPE 0 Ω 0 nf FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev. 0

21 Test Circuits (Continued) SCOPE SCOPE kω kω 00 pf V 00 pf V V IN GND V LED V LED- * V IN GND V LED V LED- * FOD V CM FOD V CM V LED S V LED S 0 0 V Floating GND V Floating GND 0 Ω 0 nf 0 Ω 0 Ω 0 nf V FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

22 Test Circuits (Continued) V V SCOPE kω kω V 00 pf V V IN V IN GND FOD FOD V IN GND V LED V LED V LED- * V LED- * A S FOD kω V LED V LED 0 0 S S V CM V *Pin (V LED- ) is internally connected to pin (GND). GND V LED V LED- * V IN GND FOD Floating GND SCOPE Initially set S to A before connecting V to clamp pin. Then switch to B before sweeping down to get the _THRES, clamping threshold V LED voltage pf kω B V IN V LED- * S V CM V LED 0 V *Pin (V LED- ) is internally connected to pin (GND). V LED S 0 0 V V 0 V 0 V Floating GND 0 Ω 0 nf 0 Ω 0 0 Ω 0 nf I CLAMPL Pulsed Sweep from V Vto _THRES FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

23 Timing Diagrams V V IN. V 0V t R Figure. Propagation Delay (t PLH, t PHL ), Rise Time (t R ), and Fall Time (t F ) Timing Diagram V t PLH 0% t (LOW) t (0%) 0% t (0%) t () Figure. Definitions for Fault Reset Input (), Desaturation Voltage Input (), Output Voltage ( ), and Fault Output () Timing Waveforms 0%. V t PHL t F 0% 0% 0% 0% 0% (0. x ) t () FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

24 Application Information Micro Controller Functional Description The functional behavioral of FOD is illustrated by the detailed internal schematic shown in Figure. This explains the interaction and sequence of internal and external signals, together with the timing diagrams.. Non-Inverting and Inverting Inputs There are two CMOS/TTL-compatible inputs, and V IN-, to control the IGBT in non-inverting and inverting configurations, respectively. When V IN- is set to LOW state, controls the driver output,, in non-inverting configuration. When is set to HIGH state, V IN- controls the driver output in inverting configuration. V IN GND V LED V kω 0 pf Delay Q R S V IN GND V LED V LED- * FOD V LED S 0 C BLANK µf 0 µf 00 pf D µf kω V F = V Figure. Recommended Application Circuit V LED Fault Sense Optocoupler Gate Drive Optocoupler V LED Rg Q Q The relationship between the inputs and output are illustrated in the Figure. During normal operation, when no fault is detected, the output, which is an open-drain configuration, is latched to HIGH state. This allows the gate driver to be controlled by the input logic signal. When a fault is detected, the output is latched to LOW state. This condition remains until the input logic is pulled to LOW and the pin is also pulled LOW for a period longer than PW. µs Pulse Generator Figure. Detailed Internal Schematic UVLO Comparator V x 0 µa V V CE -Phase Output V CE 0x,0 S FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

25 . Gate Driver Output A pair of PMOS and NMOS comprise the output driver stage, which facilitates close to rail-to-rail output swing. This feature allows a tight control of gate voltage during on-state and short-circuit condition. The output driver is typically to sink A and source A at room temperature. Due to the low R DS(ON) of the MOSFETs, the power dissipation is reduced as compared to those bipolar-type driver output stages. The absolute maximum rating of the output peak current, I O(PEAK), is A; therefore the careful selection of the gate resistor, Rg, is required to limit the short-circuit current of the IGBT. As shown in Figure, gate driver output is influenced by signals from the photodetector circuitry, the UVLO comparator, and the signals. Under no-fault condition, normal operation resumes while the supply voltage is above the UVLO threshold, the output of the photodetector drives the MOSFETs of the output stage. The logic circuitry of the output stage ensures that the push-pull devices are never ON simultaneously. When the output of the photodetector is HIGH, the output,, is pulled to HIGH state by turning on the PMOS. When the output of the photodetector is LOW, is pulled to LOW state by turning on the NMOS. When supply goes below V UVLO, which is the designated UVLO threshold at the comparator, is pulled down to LOW state regardless of photodetector output. When desaturation is detected, turns off slowly as it is pulled LOW by the XNMOS device. The input to the fault sense circuitry is latched to HIGH state and turns on the LED. When goes below V, the 0XNMOS device turns on again, clamping the IGBT gate firmly to S. The Fault Sense signal remains latched in the HIGH state until the LED of the gate driver circuitry turns off.. Desaturation Protection, Output Desaturation detection protection ensures the protection of the IGBT at short-circuit by monitoring the collectoremitter voltage of the IGBT in the half bridge. When the voltage goes up and reaches above the threshold voltage, a short-circuit condition is detected and the driver output stage executes a soft IGBT turn-off and is eventually driven LOW, as illustrated in Figure. The open-drain output is triggered active LOW to report a desaturation error. It is only cleared by activating active LOW by the external controller to the input with the input logic is pulled to LOW. The fault detector should be disabled for a short period (blanking time) before the IGBT turns on to allow the collector voltage to fall below threshold. This blanking period protects against false trigger of the while the IGBT is turning on. The blanking time is controlled by the internal charge current, the voltage threshold, and the external capacitor (capacitor between and pin). The nominal blanking time can be calculated using external capacitance (C BLANK ), threshold voltage (V ), and charge current (I CHG ) as: t BLANK = C BLANK x V / I CHG With a recommended 00 pf capacitor, the nominal blanking time is: 00 pf x V / 0 µa =. µs. Soft Turn-Off The soft turn-off feature ensures the safe turn off of the IGBT under fault conditions. This reduces the voltage spike on the collector of the IGBT. Without this, the IGBT would see a heavy spike on the collector and result in permanent damage to the device.. Under-Voltage Lockout Under-voltage detection prevents the application of insufficient gate voltage to the IGBT. This could be dangerous, as it would drive the IGBT out of saturation and into the linear operation where the losses are very high and quickly overheated. This feature ensures the proper operating of the IGBTs. The output voltage,, remains LOW regardless of the inputs as long as the supply voltage,, is less than V UVLO. When the supply voltage falls below V UVLO-, goes LOW, as illustrated in Figure.. Active Miller Clamp Function An active Miller clamp feature allows the sinking of the Miller current to the ground or emitter of the IGBT during a high-dv/dt situation. Instead of driving the IGBT gate to a negative supply voltage to increase the safety margin, the device has a dedicated pin to control the Miller current. During turn-off, the gate voltage of the IGBT is monitored and the output is activated when the gate voltage goes below V (relative to S ). The Miller clamp NMOS transistor is then turned on and provides a low resistive path for the Miller current. This helps prevent a self-turn-on due to the parasitic Miller capacitor in power switches. The clamp voltage is L. V maximum for a Miller current up to 00 ma. In this way, the function does not affect the turnoff characteristic. It helps to clamp the gate to the LOW level throughout the turn-off time. During turn-on, where the input of the driver is activated, the function is disabled or opened.. Time to Good Power At initial power up, the LED is off and the output of the gate driver should be in the LOW state. Sometimes race conditions exist that causes the output to follow the (assuming and are connected externally), until all of the circuits in the output IC have stabilized. This condition can result in output transitions or transients that are coupled to the driven IGBT. These glitches can cause the high-side and low-side IGBTs to conduct shoot-through current that may result in destructive damage to the power semiconductor devices. ON has introduced a initial turn-on delay, generally called time- FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

26 to-good power. This delay, typically. µs, is only present during the initial power-up of the device. Once powered, the time-to-good power delay is determined by the delay of the UVLO circuitry. If the LED is ON during V IN V V IN V IN Normal Operation 0 V V 0 V Figure. Input/Output Relationship the initial turn-on activation, LOW-to-HIGH transition at the output of the gate driver only occurs. µs after the power is applied. Fault Condition Blanking Time Figure. Timing Relationship Among,, and V V 0 V V UVLO Figure. UVLO for Output Side Reset V UVLO FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

27 Ordering Information Part Number Package Packing Method FOD SO -Pin Tube (0 units per tube) FODR SO -Pin Tape and Reel (0 units per reel) FODO -Pin, DIN EN/IEC 0-- Option Tube (0 units per tube) FODRO -Pin, DIN EN/IEC 0-- Option Tape and Reel (0 units per reel) All packages are lead free per JEDEC: J-STD-00B standard. Marking Information Definitions Company logo Device number, e.g., for FOD DIN EN/IEC0-- option (only appears on component ordered with this option) Plant code, e.g., D Last-digit year code, e.g., B for 0 Two-digit work week ranging from 0 to Lot traceability code Package assembly code, J D X Y Y K K V J FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

28 Reflow Profile Temperature ( C) T P T L Tsmax Tsmin Profile Freature Pb-Free Assembly Profile Temperature Minimum (T smin ) 0 C Temperature Maximum (T smax ) 00 C Time (t S ) from (T smin to T smax ) Ramp-up Rate (t L to t P ) 00 seconds C/second max. Liquidous Temperature (T L ) C Time (t L ) Maintained Above (T L ) 00 seconds Peak Body Package Temperature 0 C 0 C / C Time (t P ) within C of 0 C Ramp-down Rate (T P to T L ) Max. Ramp-up Rate = C/S Max. Ramp-down Rate = C/S Preheat Area 0 Time C to Peak Temperature t s Time C to Peak Time (seconds) t L 0 seconds C/second max. minutes max. tp 0 0 FOD. A Output Current, IGBT Drive Optocoupler with Active Miller Clamp, Desaturation Detection, and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

29 A 0.0 X 0.0 C A-B D. TYP 0. TYP (.) C D X PIN ONE INDICATOR 0. TYP.0 MAX.±0.0. B (X) 0.0 C 0. C X TIPS 0. C A-B D X 0.0 C LAND PATTERN RECOMMENDATION A 0.0±0. C SEATING PLANE (.) NOTES: UNLESS OTHERWISE SPECIFIED GAUGE PLANE 0. C (R0.) (R0.) A) DRAWING REFERS TO JEDEC MS-0, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS D) DRAWING CONFORMS TO ASME Y.M- E) LAND PATTERN STANDARD: SOICP00X-N F) DRAWING FILE NAME: MKT-MFREV SEATING PLANE SCALE: :

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