FOD A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing

Transcription

1 FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Features High Noise Immunity Characterized by Common Mode Rejection kv/µs Minimum, V CM = 00 V PEAK. A Peak Output Current Driving Capability for Most 00 V / 0 A IGBTs Optically Isolated Fault Sensing Feedback Soft IGBT Turn-off Built-in IGBT Protection Desaturation Detection Under-Voltage Lockout (UVLO) Protection Wide Supply Voltage Range: V to 0 V P-Channel MOSFETs at Output Stage Enables Output Voltage Swing Close to the Supply Rail (Rail-to-Rail Output). V / V, CMOS/TTL Compatible Inputs High Speed 0 ns Maximum Propagation Delay Over Full Operating Temperature Range Extended Industrial Temperate Range, -0 C to 00 C Safety and Regulatory Approvals UL,, V RMS for Minute DIN EN/IEC 0--:, V PEAK Working Insulation Voltage Rating,000 V PEAK Transient Isolation Voltage Rating R DS(ON) of Ω (Typical) Offers Lower Power Dissipation User-Configurable: Inverting, Non-inverting, Auto-reset, Auto-shutdown mm Creepage and Clearance Distances Applications Industrial Inverter Induction Heating Isolated IGBT Drive Description October 0 The FOD is an advanced. A output current IGBT drive optocoupler capable of driving most 00 V /0 A IGBTs. It is ideally suited for fast-switching driving of power IGBTs and MOSFETs used in motor-control inverter applications and high-performance power systems. The FOD offers critical protection features necessary for preventing fault conditions that lead to destructive thermal runaway of IGBTs. The device utilizes ON s proprietary Optoplanar coplanar packaging technology, and optimized IC design to achieve high noise immunity, characterized by high common-mode rejection and power supply rejection specifications. The FOD consists of an integrated gate drive optocoupler featuring low R DS(ON) CMOS transistors to drive the IGBT from rail-to-rail and an integrated high-speed isolated feedback for fault sensing. The device is housed in a compact -pin small-outline plastic package which meets the mm creepage and clearance requirements. FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

2 Truth Table V IN ( ) UVLO Pin Configuration Pin Definitions Figure. Pin Configuration Detected? X X Active X X LOW X X X Yes LOW LOW LOW X X X X LOW X HIGH X X X LOW HIGH LOW Not Active No HIGH HIGH V IN GND V LED V LED- * Pin # Name Description Non-inverting Gate Drive Control Input V IN Inverting Gate-Drive Control Input Positive Input Supply Voltage ( V to. V) GND Input Ground Reset Input Fault Output (Open Drain) V LED LED Anode (Do not connect. Leave floating.) V LED- LED Cathode (Must be connected to ground.) Output Supply Voltage (Negative) 0 Output Supply Voltage (Negative) Gate-Drive Output Voltage Pull-up PMOS Transistor Source Positive Output Supply Voltage Desaturation Voltage Input V LED LED Anode (Do not connect. Leave floating.) Output Supply Voltage / IGBT Emitter 0 V LED FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

3 Block Diagram V IN GND V LED Input IC Fault Shield V LED LED LED Fault Sense Optocoupler Gate Drive Optocoupler V LED Shield Driver Figure. Functional Block Diagram Output IC UVLO,0 FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

4 Safety and Insulation Ratings As per DIN EN/IEC 0--, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings must be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 00/. Table Rated Mains Voltage < 0 V RMS IIV Rated Mains Voltage < 00 V RMS IIV Rated Mains Voltage < 0 V RMS IIV Rated Mains Voltage < 00 V RMS IIV Rated Mains Voltage < 000 V RMS IIII Climatic Classification 0/00/ Pollution Degree (DIN VDE 00/.) CTI Comparative Tracking Index (DIN IEC /VDE 00 Part ) V PR Input-to-Output Test Voltage, Method b, V IORM x. = V PR, 00% Production Test with t m = s, Partial Discharge < pc Input-to-Output Test Voltage, Method a, V IORM x. = V PR, Type and Sample Test with t m = 0 s, Partial Discharge < pc V peak V peak V IORM Maximum Working Insulation Voltage V peak V IOTM Highest Allowable Over Voltage 000 V peak External Creepage.0 mm External Clearance.0 mm Insulation Thickness 0. mm Safety Limit Values Maximum Values in Failure; T Case Case Temperature 0 C Safety Limit Values Maximum Values in Failure; P S,INPUT Input Power 00 mw Safety Limit Values Maximum Values in Failure; P S,OUTPUT Output Power 00 mw R IO Insulation Resistance at T S, V IO = 00 V 0 Ω FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

5 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. = ºC unless otherwise specified. Symbol Parameter Value Units T STG Storage Temperature -0 to ºC T OPR Operating Temperature -0 to 00 ºC T J Junction Temperature -0 to ºC T SOL Lead Wave Solder Temperature (no solder immersion) Refer to reflow temperature profile on page. Notes:. Maximum pulse width = 0 µs, maximum duty cycle = 0.%.. This negative output supply voltage is optional. It s only needed when negative gate drive is implemented. Refer to Dual Supply Operation Negative Bias at Vss on page.. No derating required across temperature range.. Derate linearly above C, free air temperature at a rate of 0. mw/ C. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected to conditions outside these ratings. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. ON does not recommend exceeding them or designing to absolute maximum ratings. Note:. During power up or down, it is important to ensure that remains low until both the input and output supply voltages reaches the proper recommended operating voltages to avoid any momentary instability at the output state. See also the discussion in the Time to Good Power section on page. Semiconductor Components Industries, LLC, 00 FOD Rev. 0 for 0 seconds ºC I Fault Output Current ma I O(PEAK) Peak Output Current () A Negative Output Supply Voltage () 0 to V Positive Output Supply Voltage -0. to ( ) V (peak) Gate Drive Output Voltage -0. to V Output Supply Voltage -0. to V Positive Input Supply Voltage -0. to V, V IN- and V Input Voltages -0. to V V Fault Pin Voltage -0. to V Source of Pull-up PMOS Transistor Voltage. to V V Voltage to V PD I Input Power Dissipation ()() 00 mw PD O Output Power Dissipation ()() 00 mw Symbol Parameter Min. Max. Unit Ambient Operating Temperature ºC Input Supply Voltage (). V Total Output Supply Voltage 0 V Negative Output Supply Voltage 0 V Positive Output Supply Voltage () 0 ( ) V Source of Pull-up PMOS Transistor Voltage. V FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing

6 Isolation Characteristics Apply over all recommended conditions, typical value is measured at = ºC Symbol Parameter Conditions Min. Typ. Max. Units V ISO Input-Output Isolation Voltage Notes:. Device is considered a two terminal device: pins to are shorted together and pins to are shorted together.., VRMS for -minute duration is equivalent to,0 VRMS for -second duration.. The input-output isolation voltage is a dielectric voltage rating as per UL. It should not be regarded as an input-output continuous voltage rating. For the continuous working voltage rating refer to your equipment-level safety specification or DIN EN/IEC 0-- Safety and Insulation Ratings Table. Electrical Characteristics = C, Relative Humidity < 0%, t =.0 minute, I I-O 0 µa, 0 Hz ()()(), V RMS R ISO Isolation Resistance V I-O = 00 V () 0 Ω C ISO Isolation Capacitance V I-O = 0 V, Freq =.0 MHz () pf Apply over all recommended conditions, typical value is measured at = V, = 0 V, = 0 V, and = C; unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Units Figure L, V IN-L, Logic Low Input Voltages 0. V V L H, V IN-H, Logic High Input Voltages.0 V V H I INL, I IN-L, Logic Low Input Currents V IN = 0. V ma I L I L Logic Low Output Current V = 0. V.0.0 ma, I H Logic High Output Current V = µa I OH High Level Output Current = V - -. A,, = V (0) -. A I OL Low Level Output Current = V A, I OLF Low Level Output Current During Fault Condition = V (). A = V 0 0 ma, 0 H High Level Output Voltage I O = 00 ma ()()().0 V 0. V V,, L Low Level Output Voltage I O = 00 ma V, 0, I DDH High Level Supply Current = =. V, V IN = 0 V I DDL Low Level Supply Current = V IN- = 0 V, =. V ma, ma I DDH High Level Output Supply Current = Open (). ma,, I DDL Low Level Output Supply Current = Open.. ma I SH High Level Source Current I O = 0 ma 0.. ma I SL Low Level Source Current I O = 0 ma 0.. ma I EL Low Level Supply Current ma, I EH High Level Supply Current ma I CHG Blanking Capacitor Charge Current V = V ()() ma, 0 FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

7 Electrical Characteristics (Continued) Apply over all recommended conditions, typical value is measured at, = 0 V, = 0V, and = C; unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Units Figure I DSCHG Blanking Capacitor Discharge Current Notes: 0. Maximum pulse width = 0 µs, maximum duty cycle = 0.%.. Maximum pulse width =. ms, maximum duty cycle =.%.. H is measured with the DC load current in this testing (Maximum pulse width = ms, maximum duty cycle = 0%).When driving capacitive loads, H will approach V DD as I OH approaches zero units.. Positive output supply voltage ( ) should be at least V to ensure adequate margin in excess of the maximum under-voltage lockout threshold, V UVLO, of. V.. When > V UVLO and output state is allowed to go high, the detection feature is active and provides the primary source of IGBT protection. UVLO is needed to ensure detection is functional.. The blanking time, t BLANK, is adjustable by an external capacitor (C BLANK ), where t BLANK = C BLANK (V / I CHG ). Switching Characteristics V = V 0 ma 0 V UVLO Under Voltage Lockout > C 0... V,, V UVLO- Threshold () < C. 0.. V UVLO HYS Under Voltage Lockout Threshold Hysteresis V Threshold () > V ULVO-, < C 0..0 V.0.. V, 0 Apply over all recommended conditions, typical value is measured at, = 0 V, = 0 V, and = C; unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Units Figure t PHL t PLH PWD PDD Skew Propagation Delay Time to Logic Low Output () Rg = 0 Ω, Cg = 0nF, f = 0 khz, Duty Cycle = 0% () 0 0 ns, 0,,,,,, 0 Propagation Delay Time to 0 0 ns Logic High Output () Pulse Width Distortion, 0 00 ns t PHL t PLH () Propagation Delay Difference Between Any Two Parts or Channels, ( t PHL t PLH ) (0) 0 0 ns t R Output Rise Time (0% to 0%) ns, 0 t F Output Fall Time (0% to 0%) ns t (0%) Sense to 0% Delay () Rg = 0 Ω, Cg = 0 nf, 0 00 ns, t (0%) Sense to 0% Delay () = 0 V. µs,,, t () t (LOW) t () Sense to Low Level. µs,, Signal Delay () Sense to Low 0 ns Propagation Delay () to High Level Signal 0 µs 0,, Delay () t (MUTE) Input Mute 0 µs PW Signal Pulse Width. µs FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

8 Switching Characteristics (Continued) Apply over all recommended conditions, typical value is measured at, = 0 V, = 0 V, and = C; unless otherwise specified. Symbol Parameter Conditions Min. Typ. Max. Units Figure t UVLO ON UVLO Turn On Delay () = 0V in µs, t UVLO OFF UVLO Turn Off Delay ().0ms Ramp µs t GP Time to Good Power () = 0 to 0V in 0µs Ramp CM H Common Mode Transient Immunity at Output High CM L Common Mode Transient Immunity at Output Low = ºC, = V, = V, = Ground, V CM = 00Vpk () = ºC, = V, = V, = Ground, V CM = 00Vpk (). µs,, 0 kv/µs, 0 kv/µs, Notes:. This load condition approximates the gate load of a 00 V / 0 A IGBT.. Propagation delay t PHL is measured from the 0% level on the falling edge of the input pulse (, V IN- ) to the 0% level of the falling edge of the signal. Refer to Figure 0.. Propagation delay t PLH is measured from the 0% level on the rising edge of the input pulse (, V IN- ) to the 0% level of the rising edge of the signal. Refer to Figure 0.. PWD is defined as t PHL t PLH for any given device. 0. The difference between t PHL and t PLH between any two FOD parts under same operating conditions with equal loads.. This is the amount of time the threshold must be exceeded before begins to go LOW. This is supply voltage dependent. See Figure.. This is the amount of time from when the threshold is exceeded, until the output goes LOW. See Figure.. The length of time the threshold must be exceeded before begins to go LOW, and the output begins to go LOW. See Figure.. The length of time from when is asserted LOW, until output goes HIGH. See Figure.. The UVLO turn-on delay, t UVLO ON, is measured from V UVLO threshold voltage of the output supply voltage ( ) to the V level of the rising edge of the signal.. The UVLO turn-off delay, t UVLO OFF, is measured from V UVLO threshold voltage of the output supply voltage ( ) to the V level of the falling edge of the signal.. The time to good power, t GP, is measured from. V level of the rising edge of the output supply voltage ( ) to the V level of the rising edge of the signal.. Common-mode transient immunity at output HIGH state is the maximum tolerable negative dvcm/dt on the trailing edge of the common-mode pulse, V CM, to assure the output will remain in HIGH state (i.e., > V or > V)..Common-mode transient immunity at output LOW state is the maximum positive tolerable dvcm/dt on the leading edge of the common-mode pulse, V CM, to assure the output will remain in LOW state (i.e., <.0 V or < 0. V). FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

9 Typical Performance Characteristics I LED = 0 ma = C 0 0 Figure. Logic Low Output Current vs. Logic Low Output Voltage (V L) H - - HIGH LEVEL OUTPUT I L - CURRENT (ma) I OL - LOW LEVEL OUTPUT CURRENT (A) VOLTAGE DROP (V) V L - VOLTAGE (V) Figure. Low Level Output Current (I OL) vs. Temperature I FAU LTL) = 0 V = 0 V = V = V I O = -0 µa I O = -00 ma Figure. High Level Output Voltage Drop (H- V DD) vs. Temperature I OLF - LOW LEVEL OUTPUT CURRENT I OH - HIGH LEVEL OUTPUT CURRENT (A) DURING CONDITION (ma) = 0 V = - V = - V Figure. High Level Output Current (I OH) vs. Temperature 0 00 = C = -0 C = 00 C = 0 V OUTPUT VOLTAGE (V) Figure. Low Level Output Current During Fault Condition (I OLF) vs. Output Voltage (L) L - LOW LEVEL OUTPUT VOLTAGE (V) = 0 V I O = 00 ma = 0 V Figure. Low Level Output Voltage (L) vs. Temperature FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

10 Typical Performance Characteristics (Continued) H - HIGH LEVEL OUTPUT VOLTAGE (V) Figure. High Level Output Voltage (H) vs. High Level Output Current (I OH) I DD - SUPPLY CURRENT (ma) I DD - OUTPUT SUPPLY CURRENT (ma) = 0 V 00 C C = -0 C I OH - HIGH LEVEL OUTPUT CURRENT (A) = 0 V (I DDL ) / V (I DDH ) Figure. Supply Current (I DD) vs. Temperature = 0 V (I DDL ) / V (I DDH ) I DDH I DDL I DDL I DDH OUTPUT SUPPLY VOLTAGE (V) Figure. Output Supply Current (I DD) vs. Output Supply Voltage () I CHG - BLANKING CAPACITOR I DD - OUTPUT SUPPLY CURRENT (ma) CHARGING CURRENT (ma) L - LOW LEVEL OUTPUT VOLTAGE (V) = 0 V = 0 V = 00 C C -0 C I OL - LOW LEVEL OUTPUT CURRENT (A) Figure 0. Low Level Output Voltage (L) vs. Low Level Output Current (I OL) = 0 V = 0 V (I DDL ) / V (I DDH ) Figure. Output Supply Current (I DD) vs. Temperature = 0 V V = 0 to V I DDL I DDH Figure. Blanking Capacitor Charge Current (I CHG) vs. Temperature FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev. 0

11 Typical Performance Characteristics (Continued) V UVLO - UNDER VOLTAGE LOCKOUT I E - SUPPLY CURRENT (ma) t P - PROPAGATION DELAY (µs) THRESHOLD (V) = 0 V = 0 V (I EL ) / V (I EH ) Figure. Supply Current (I E) vs. Temperature Figure. Under Voltage Lockout Threshold (V UVLO) vs. Temperature Figure. Propagation Delay (t P) vs. Temperature I EH I EL = 0 V V UVLO V UVLO- t PLH f = 0 KHz 0% Duty Cycle = 0 Ω C L = 0 nf t PHL I S - SOURCE CURRENT (ma) V - THRESHOLD (V) t P - PROPAGATION DELAY (µs) = 0 V I O - OUTPUT CURRENT (ma) Figure. Source Current (I S) vs. Output Current (I O) = 0 V Figure. Threshold (V ) vs. Temperature Figure. Propagation Delay (t P) vs. Supply Voltage () -0 C C 00 C f = 0 KHz 0% Duty Cycle = 0 Ω C L = 0 nf t PLH t PHL - SUPPLY VOLTAGE (V) FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

12 Typical Performance Characteristics (Continued) t PLH - PROPAGATION DELAY (µs) = 0 V f = 0 KHz 0% Duty Cycle = 0 Ω C L = 0 nf =. V =. V Figure. Propagation Delay Time to Logic High Output (t PLH) vs. Temperature t P - PROPAGATION DELAY (µs) t (0%) - SENSE to 0% DELAY (µs) =.0 V f = 0 KHz 0% Duty Cycle = 0 Ω = 0 V Figure. Propagation Delay (t P) vs. Load Capacitance (C L) = 0 V = 0Ω C L = 0 nf Figure. Sense to 0% Delay (t (0%)) vs. Temperature t PLH t PHL C L - LOAD CAPACITANCE (nf) t PHL - PROPAGATION DELAY (µs) t P - PROPAGATION DELAY (µs) t (0%) - SENSE to 0% DELAY (µs) = 0 V f = 0 KHz 0% Duty Cycle = 0 Ω C L = 0 nf =. V Figure. Propagation Delay Time to Logic Low Output (t PHL) vs. Temperature = 0 V Figure. Propagation Delay (t P) vs. Load Resistance () =. V =.0 V f = 0 KHz 0% Duty Cycle C L = 0 nf = 0Ω C L = 0 nf Figure. Sense to 0% Delay (t (0%)) vs. Temperature t PLH t PHL - LOAD RESISTANCE (Ω) = 0 V = V FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

13 Typical Performance Characteristics (Continued) t () - SENSE to LOW LEVEL t UVLO - UNDER VOLTAGE LOCKOUT SIGNAL DELAY (µs) t (0%) - SENSE to 0% DELAY (µs) = 0 V = 0Ω C L = 0 nf = 0 V = V Figure. Sense to Low Level Signal Delay (t ()) vs. Temperature THRESHOLD DELAY (µs) Figure. Sense to 0% Delay (t (0%)) vs. Load Capacitance (C L) Figure. Sense to 0% Delay Figure. to High Level (t (0%)) vs. Load Resistance () Signal Delay (t ()) vs. Temperature C L = 0 nf = 0 V f = 0Hz 0% Duty Cycle = 0 V = V - LOAD RESISTANCE (Ω) t UVLO ON t UVLO OFF Figure. Under Voltage Lockout Threshold Delay ( UVLO) vs. Temperature t () - TO HIGH LEVEL t (0%) - SENSE to 0% DELAY (µs) SIGNAL DELAY (µs) t GP - TIME TO GOOD POWER (µs) 0 = 0Ω = 0 V = V = 0 V = = 0 Ω C L = 0 nf C L - LOAD CAPACITANCE (nf) =. V =.0 V =. V f = 0Hz 0% Duty Cycle SUPPLY VOLTAGE (V) Figure. Time to Good Power (T GP) vs. Supply Voltage () FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

14 Typical Performance Characteristics (Continued) t () - SENSE to LOW LEVEL t UVLO - UNDER VOLTAGE LOCKOUT SIGNAL DELAY (µs) t (0%) - SENSE to 0% DELAY (µs) = 0 V = 0Ω C L = 0 nf = 0 V = V C L - LOAD CAPACITANCE (nf) Figure. Sense to Low Level Figure. Sense to 0% Delay Figure. Time to Good Power ( Signal Delay (t ()) vs. Temperature (t GP) (0%)) vs. Load Capacitance (C L) vs. Temperature THRESHOLD DELAY (µs) C L = 0 nf = 0 V = V LOAD RESISTANCE (Ω) Figure. Sense to 0% Delay Figure. to High Level (t (0%)) vs. Load Resistance () Signal Delay (t ()) vs. Temperature = 0 V f = 0Hz 0% Duty Cycle t UVLO ON t UVLO OFF t GP - TIME TO GOOD POWER (µs) Figure. Under Voltage Lockout Threshold Delay ( UVLO) vs. Temperature = 0 V f = 0Hz 0% Duty Cycle t () - TO HIGH LEVEL t (0%) - SENSE to 0% DELAY (µs) SIGNAL DELAY (µs) t GP - TIME TO GOOD POWER (µs) 0 = 0Ω = 0 V = = 0 Ω C L = 0 nf = 0 V =. V =.0 V =. V = V f = 0Hz 0% Duty Cycle SUPPLY VOLTAGE (V) Figure. Time to Good Power (T GP) vs. Supply Voltage () FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

15 Test Circuits Pulse Gen PW = 0 µs Period = ms Pulse Gen PW =. ms Period = ms V V I V = 0. V for I L V =.0 V for I H V IN GND V LED V LED- * Figure. Fault Output Current (I L ) and (I H ) Test Circuit V kω V kω FOD Figure. High Level Output Current (I OH ) Test Circuit V IN GND V LED V LED- * V IN GND V LED V LED- * FOD FOD Figure. Low Level Output Current (I OL ) Test Circuit V LED V LED V LED A 0 ma Switch A closed for I L Switch A opened for I H 0.µF µf µf µf µf 0 V 0 V FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

16 Test Circuits (Continued) V Switch A for H test Switch B for L test V IN GND V LED V LED- * Figure. High Level (H ) and Low Level (L ) Output Voltage Test Circuit V A kω B Switch A for I DDH test Switch B for I DDL test Figure. High Level (I DDH ) and Low Level (I DDL ) Supply Current Test Circuit V I DD Switch A for I DDH, I SH and I EH test Switch B for I DDL, I SL and I EL test A A B B V IN GND V LED V LED- * V IN GND V LED V LED- * FOD FOD FOD Figure. High Level (I DDH ), Low Level (I DDL ) Output Supply Current, High Level (I SH ), Low Level (I SL ) Source Current, High Level (I EH ), and Low Level (I EL ) Supply Current Test Circuit V LED V LED V LED I E I DD I S 00 ma pulsed B A 00 ma pulsed 0 V 0 V FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

17 Test Circuits (Continued) Figure 0. Low Level Output Current During Fault Conditions (I OLF ), Blanking Capacitor Charge Current (I CHG ), Blanking Capacitor Discharging Current (I DSCHG ) and Threshold (V ) Test Circuit V V kω F = 0 khz DC = 0% V kω V IN GND V LED V LED- * Figure. Under Voltage Lockout Threshold (V UVLO ) Test Circuit V IN GND V LED V LED- * V IN GND V LED V LED- * FOD FOD FOD Figure. Propagation Delay (t PLH, t PHL ), Pulse Width Distortion (PWD), Rise Time (t R ) and Fall Time (t F ) Test Circuit V LED V LED 0 V LED 0 0 V I CHG/DSCHG I OLF RL RL 0 nf V RL 0 nf V CL 0 V DC Sweep 0 to V (00 steps) Parameter Analyzer 0 V FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

18 Test Circuits (Continued) Low to High V V V IN GND V LED V LED- * FOD Figure. Reset Delay (t () ) Test Circuit Figure. Under Voltage Lockout Delay (t UVLO ) and Time to Good Power (t GP ) Test Circuit V LED 0 00 pf Figure. Sense (t (0%), t (0%) ), Fault (t () ), and (t (LOW) ) Test Circuit V kω kω V V kω V IN GND V LED V LED- * V IN GND V LED V LED- * FOD FOD V LED V LED 0 0 RL 0 nf Strobe V RL 0 nf 0 V 0 V ** **.0 ms ramp for t UVLO 0 µs ramp for t GP FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

19 Test Circuits (Continued) V V IN GND kω 00 pf V LED V LED- * FOD V LED 0 V CM Floating GND Figure. Common Mode Low (CM L ) Test LED Off FOD V V IN kω 00 pf GND V LED V LED- * Floating GND V CM V LED 0 V Figure. Common Mode High (CM H ) Test LED On V SCOPE 0 Ω 0nF SCOPE 0 Ω 0 nf FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

20 Test Circuits (Continued) SCOPE SCOPE kω kω 00 pf V V 00 pf V IN GND V LED V LED- * Figure. Common Mode High (CM H ) Test LED Off V IN GND V LED V LED- * FOD V CM FOD V CM V LED V LED 0 0 V Floating GND V Floating GND Figure. Common Mode Low (CM L ) Test LED On 0 Ω 0 nf 0 Ω 0 Ω 0 nf V FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev. 0

21 Timing Diagrams V V IN. V 0V t R Figure 0. Propagation Delay (t PLH, t PHL ), Rise Time (t R ) and Fall Time (t F ) Timing Diagram V t PLH 0% t (LOW) t (0%) 0% t (0%) t () Figure. Definitions for Fault Reset Input (), Desaturation Voltage Input (), Output Voltage ( ) and Fault Output () Timing Waveforms 0%. V t PHL t F 0% 0% 0% 0% 0% (0. x ) t () FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

22 Application Information Micro Controller Functional Description The typical application circuit is shown in Figure and the functional behavioral of the FOD is illustrated by the detailed internal schematic shown in Figure. This helps explain the interaction and sequence of internal and external signals, together with the timing diagrams.. Non-Inverting and Inverting Inputs There are two CMOS/TTL compatible inputs, and V IN- to control the IGBT, in non-inverting and inverting configurations respectively. When V IN- is set to LOW, controls the driver output,, in non-inverting configuration. When is set to HIGH, V IN- controls the driver output in inverting configuration. V IN GND V LED kω V 0 pf Delay Q R S V IN GND V LED V LED- FOD V LED 0 C µf C µf 00 Ω V F = V Figure. Recommended Application Circuit V LED Fault Sense Optocoupler Gate Drive Optocoupler V LED D C 0 µf 00 pf = V D Rg Q Q The relationship between the inputs and output are illustrated in the Figure. During normal operation, when no fault is detected, the output, which is an open-drain configuration, will be latched to HIGH state. This allows the gate driver to be controlled by the input logic signal. When a fault is detected, the output will be latched to LOW state. This condition will remain until the pin is also pulled low for a period longer than PW. While setting the pin to a low state, the input pins must be pulled to low to ensure an output state ( is low or V IN- is HIGH). µs Pulse Generator Figure. Detailed Internal Schematic UVLO Comparator V 0 µa x V V CE -Phase Output V CE 0x,0 FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

23 . Gate Driver Output A pair of PMOS and NMOS transistors made up the output driver stage, which facilitates close to rail-to-rail output swing. This feature allows a tight control of gate voltage during on-state and short circuit condition. The output driver is typically capable of sinking A and sourcing A at room temperature. Due to the low RDS (ON) of the MOSFETs, the power dissipation is reduced as compared to those bipolar-type driver output stages. The absolute maximum rating of the output peak current, I O(PEAK) is A, thus the careful selection of the gate resistor, Rg, is required to limit the short circuit current of the IGBT. As shown in Figure, the gate driver output is influenced by signals from the photodetector circuitry, the UVLO comparator, and the signals. Under no fault condition, normal operation resumes while the supply voltage is above the UVLO threshold, the output of the photodetector will drive the MOSFETs of the output stage. The logic circuitry of the output stage will ensure that the push-pull devices will never be turned ON simultaneously. When the output of the photodetector is HIGH, the output, will be pulled to HIGH state by turning on the PMOS. When the output of the photodetector is LOW, will be pulled to LOW state by turning on the NMOS. When supply goes below V UVLO, which is the designated ULVO threshold at the comparator, will be pulled down to LOW state regardless of photodetector output. When desaturation is detected, will turn off slowly as it is pulled low by the XNMOS device, the input to the Fault Sense circuitry will be latched to HIGH state and turns on the LED. When goes below V, the 0XNMOS device turns on again, clamping the IGBT gate firmly to. The Fault Sense signal will remain latched in the HIGH state until the LED of the gate driver circuitry turns off.. Desaturation Protection, Output Desaturation detection protection ensures the protection of the IGBT at short circuit by monitoring the collectoremitter voltage of the IGBT in the half bridge. When the voltage goes up and reaches above the threshold voltage, a short circuit condition is detected and the driver output stage will execute a soft IGBT turn-off and will be eventually driven low. This sequence is illustrated in Figure. The open-drain output is triggered active low to report a desaturation error. It could only be cleared by activating active low by the external controller to the input. The fault detector should be disabled for a short time period (blanking time) before the IGBT turns on to allow the collector voltage to fall below threshold. This blanking period protects against false trigger of the while the IGBT is turning on.. Soft Turn-Off The soft turn-off feature ensures the safe turn off of the IGBT under fault condition. This reduces the voltage spike on the collector of the IGBT. Without this, the IGBT would see a heavy spike on the collector, resulting in a permanent damage to the device when it s turned off immediately.. Under Voltage Lockout (UVLO) Under voltage detection prevents the application of insufficient gate voltage to the IGBT. This could be dangerous, as it would drive the IGBT out of saturation and into the linear operation where the losses are very high and quickly overheats. This feature ensures proper operating of the IGBTs. The output voltage,, remains LOW irregardless of the inputs, as long as the supply voltage,, is less than V ULVO. When the supply voltage falls below V ULVO-, goes LOW, as illustrated in Figure.. Time to Good Power At initial power up, the LED is off and the output of the gate driver should be in the LOW or OFF state. Sometimes race conditions exist that cause the output to follow V D (assuming and are connected externally), until all of the circuits in the output IC have stabilized. This condition can result in output transitions or transients that are coupled to the driven IGBT. These transients can cause the high- and low-side IGBTs to conduct shoot-through current that can damage power semiconductor devices. ON has introduced an initial turn-on delay, called time to good power. This delay, typically. µs, is only present during the initial power-up of the device. Once powered, the time to good power delay is determined by the delay of the UVLO circuitry. If the LED is ON during the initial turn-on activation, low-to-high transition at the output of the gate driver will only occur. µs after the power is applied.. Dual Supply Operation Negative Bias at The IGBT s off-state noise immunity can be enhanced by providing a negative gate-to-emitter bias when the IGBT is in the OFF state. This static off-state bias can be supplied by connecting a separate negative voltage source between the (pin ) and (pin &0). Figure illustrates the two distinct grounds. The primary ground reference is the IGBT s emitter connection. (pin ). The under-voltage threshold and desaturation voltage detection are referenced to the IGBT s emitter ( ) ground. The recommended application circuit, Figure, shows the interconnection of the and supplies. The IGBT s gate to emitter voltage is the absolute value sum of the supply and the reverse bias. The negative voltage supply at appears at the gate drive input,, when the FOD is in the LOW state. When the input drives the output high, the output voltage,, will have the potential of the and. FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

24 Figure shows the operation with a dual or split power supply. The Vss supply provides the negative gate bias, and supplies power to the output IC. The and supplies require three power supply bypass capacitors. These capacitors provide the low equivalent series resistant (ESR) paths for the instantaneous gate charging and discharging currents. Selecting capacitors with low ESR will optimize the V IN V V IN Normal Operation 0 V V 0 V Figure. Input/Output Relationship available output current. C is a low ESR style, 0 µf, multilayer ceramic capacitor. This capacitor is the primary filter for the Vss and supplies. C and C are also low ESR capacitors. They provide the primary gate charge and discharge paths. The Schottky diode, D, is connected between and to protect against a reverse voltage greater than 0. V. Fault Condition Blanking Time Reset Figure. Timing Relationship Among Desatuation Voltage (), Fault Output () and Fault Reset Input () V FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

25 V IN V 0 V V UVLO Figure. Under Voltage Lockout (UVLO) for Output Side V UVLO FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

26 Ordering Information Part Number Package Packing Method FOD SO -Pin Tube (0 units per tube) FODR SO -Pin Tape and Reel (0 units per reel) FODO -Pin, DIN EN/IEC 0-- option Tube (0 units per tube) FODRO -Pin, DIN EN/IEC 0-- option Tape and reel (0 units per reel) All packages are lead free per JEDEC: J-STD-00B standard. Marking Information Definitions Company logo Device number, e.g., for FOD DIN EN/IEC0-- Option (only appears on component ordered with this option) Plant code, e.g., D Last digit year code, e.g., E for 0 Two digit work week ranging from 0 to Lot traceability code D X Y Y K K Package assembly code, e.g., J V J FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

27 Reflow Profile Temperature ( C) TP T L Tsmax Tsmin Profile Freature Figure. Relow Profile Pb-Free Assembly Profile Temperature Minimum (T smin ) 0 C Temperature Maximum (T smax ) 00 C Time (t S ) from (T smin to T smax ) Ramp-up Rate (t L to t P ) 0 to 0 seconds C/second maximum Liquidous Temperature (T L ) C Time (t L ) Maintained Above (T L ) Peak Body Package Temperature Time (t P ) within C of 0 C Ramp-Down Rate (T P to T L ) Time C to Peak Temperature Max. Ramp-up Rate = C/S Max. Ramp-down Rate = C/S Preheat Area 0 t s Time C to Peak Time (seconds) t L 00 seconds 0 C 0 C / C 0 seconds C/second maximum minutes maximum tp 0 0 FOD. A Output Current, IGBT Drive Optocoupler with Desaturation Detection and Isolated Fault Sensing Semiconductor Components Industries, LLC, 00 FOD Rev.

28 A 0.0 X 0.0 C A-B D. TYP 0. TYP (.) C D X PIN ONE INDICATOR 0. TYP.0 MAX.±0.0. B (X) 0.0 C 0. C X TIPS 0. C A-B D X 0.0 C LAND PATTERN RECOMMENDATION A 0.0±0. C SEATING PLANE (.) NOTES: UNLESS OTHERWISE SPECIFIED GAUGE PLANE 0. C (R0.) (R0.) A) DRAWING REFERS TO JEDEC MS-0, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS D) DRAWING CONFORMS TO ASME Y.M- E) LAND PATTERN STANDARD: SOICP00X-N F) DRAWING FILE NAME: MKT-MFREV SEATING PLANE SCALE: :

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