FOD814 Series, FOD817 Series 4-Pin DIP Phototransistor Optocouplers
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1 FOD84 Series, Series 4-Pin DIP Phototransistor Optocouplers Features AC Input Response (FOD84) Current Transfer Ratio in Selected Groups: FOD84: 2 3% : 5 6% FOD84A: 5 5% A: 8 6% B: 3 26% C: 2 4% D: 3 6% Minimum BV CEO of 7 V Guaranteed Safety and Regulatory Approvals UL577, 5, VAC RMS for Minute DIN EN/IEC Applications FOD84 Series AC Line Monitor Unknown Polarity DC Sensor Telephone Line Interface Series Power Supply Regulators Digital Logic Inputs Microprocessor Inputs Description The FOD84 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. Functional Block Diagram ANODE, CATHODE 4 COLLECTOR ANODE 4 COLLECTOR CATHODE, ANODE 2 3 EMITTER CATHODE 2 3 EMITTER 4 FOD84 Figure. Schematic Figure 2. Package Outlines 26 Semiconductor Components Industries, LLC. November-27, Rev. 4 Publication Order Number: FOD84/D
2 Safety and Insulation Ratings As per DIN EN/IEC , this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics Installation Classifications per DIN VDE < 5 V RMS I IV /.89 Table, For Rated Mains Voltage < 3 V RMS I III Climatic Classification 3//2 Pollution Degree (DIN VDE /.89) 2 Comparative Tracking Index 75 Symbol Parameter Value Unit V PR Input-to-Output Test Voltage, Method A, V IORM x.6 = V PR, Type and Sample Test with t m = s, Partial Discharge < 5 pc 36 V peak Input-to-Output Test Voltage, Method B, V IORM x.875 = V PR, % Production Test with t m = s, Partial Discharge < 5 pc 56 V peak V IORM Maximum Working Insulation Voltage 85 V peak V IOTM Highest Allowable Over-Voltage 8 V peak External Creepage 7 mm External Clearance 7 mm External Clearance (for Option W,.4" Lead Spacing) mm DTI Distance Through Insulation (Insulation Thickness).4 mm T S Case Temperature () 75 C I S,INPUT Input Current () 4 ma P S,OUTPUT Output Power () 7 mw R IO Insulation Resistance at T S, V IO = 5 V () > Note:. Safety limit values maximum values allowed in the event of a failure. 2
3 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. T A = 25 C Unless otherwise specified. Symbol Total Device EMITTER Parameter FOD84 Value T STG Storage Temperature -55 to +5 C T OPR Operating Temperature -55 to to + C T J Junction Temperature -55 to +25 C T SOL Lead Solder Temperature 26 for seconds C JC Junction-to-Case Thermal Resistance 2 C/W P TOT Total Device Power Dissipation 2 mw DETECTOR I F Continuous Forward Current ±5 5 ma V R Reverse Voltage 6 V P D Power Dissipation 7 mw Derate Above C.7 mw/ C V CEO Collector-Emitter Voltage 7 V V ECO Emitter-Collector Voltage 6 V I C Continuous Collector Current 5 ma P C Collector Power Dissipation 5 mw Derate Above 9 C 2.9 mw/ C Unit 3
4 Electrical Characteristics T A = 25 C unless otherwise specified. Individual Component Characteristics Symbol Parameter Device Test Conditions Min. Typ. Max. Unit EMITTER V F Forward Voltage FOD84 I F = ±2 ma.2.4 I F = 2 ma.2.4 V I R Reverse Current V R = 4. V µa C t Terminal Capacitance FOD84 V =, f = khz 5 25 V =, f = khz 3 25 pf DETECTOR I CEO Collector Dark Current FOD84 V CE = 2 V, I F = V CE = 2 V, I F = na BV CEO Collector-Emitter Breakdown FOD84 I C =. ma, I F = 7 Voltage I C =. ma, I F = 7 V BV ECO Emitter-Collector Breakdown FOD84 I E = µa, I F = 6 Voltage I E = µa, I F = 6 V DC Transfer Characteristics Symbol Parameter Device Test Conditions Min. Typ. Max. Unit FOD I F = ± ma, V CE = 5 V FOD84A CTR Current Transfer Ratio (2) A 8 6 % B I F = 5 ma, V CE = 5 V 3 26 C 2 4 D 3 6 V CE(SAT) Collector-Emitter Saturation FOD84 I F = ±2 ma, I C = ma..2 Voltage I F = 2 ma, I C = ma..2 V AC Transfer Characteristics Symbol Parameter Device Test Conditions Min. Typ. Max. Unit f C Cut-Off Frequency FOD84 V CE = 5 V, I C = 2 ma, R L =, -3 db 5 8 khz t r t f Response Time (Rise) Response Time (Fall) FOD84, FOD84, Notes: 2. Current Transfer Ratio (CTR) = I C / I F x %. 3. For test circuit setup and waveforms, refer to page 7. V CE = 2 V, I C = 2 ma, R L = (3) 4 8 µs 3 8 µs 4
5 Electrical Characteristics (Continued) T A = 25 C unless otherwise specified. Isolation Characteristics Symbol Parameter Device Test Conditions Min. Typ. Max. Unit V ISO R ISO C ISO Input-Output Isolation Voltage (4) Isolation Resistance Isolation Capacitance FOD84, FOD84, FOD84, f = 6 Hz, t = minute, I I-O 2 µa Note: 4. For this test, Pins and 2 are common, and Pins 3 and 4 are common. 5 VAC RMS V I-O = 5 V DC 5x x V I-O =, f = MHz.6. pf 5
6 Typical Electrical/Optical Characteristic Curves T A = 25 C unless otherwise specified. COLLECTOR POWER DISSIPATION PC (mw) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Fig. 3 Collector Power Dissipation vs. Ambient Temperature (FOD84) 2.5 Ic =.5mA ma 3mA 5mA 7mA Ta = 25 C 2.5 FORWARD CURRENT I F (ma) 5. Fig. 5 Collector-Emitter Saturation Voltage vs. Forward Current COLLECTOR POWER DISSIPATION PC (mw) FORWARD CURRENT IF (ma) Fig. 4 Collector Power Dissipation vs. Ambient Temperature () T A = 5 o C 75 o C 5 o C (FOD84) 25 o C o C -3 o C -55 o C FORWARD VOLTAGE V F (V) Fig. 6 Forward Current vs. Forward Voltage FORWARD CURRENT IF (ma) T A = o C 75 o C 5 o C 25 o C o C -3 o C -55 o C FORWARD VOLTAGE V F (V) Fig. 7 Forward Current vs. Forward Voltage () CURRENT TRANSFER RATIO CTR ( %) V CE = 5V Ta= 25 C FOD FORWARD CURRENT I F (ma) Fig. 8 Current Transfer Ratio vs. Forward Current 6
7 Typical Electrical/Optical Characteristic Curves (Continued) T A = 25 C unless otherwise specified. COLLECTOR CURRENT IC (ma) RELATIVE CURRENT TRANSFER RATIO (%) I F = 3mA I F = 5mA V CE = 5V 2 ma ma FOD84 I F = ma V CE = 5V 5mA Pc(MAX.) ma Ta= 25 C COLLECTOR-EMITTER VOLTAGE V CE (V) Fig. 9 Collector Current vs. Collector-Emitter Voltage (FOD84) Fig. Relative Current Transfer Ratio vs. Ambient Temperature COLLECTOR CURRENT IC (ma) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) 3 I I F = 3mA I F = 2mA I C = ma 2mA ma 5m A Ta = 25 C Pc(MAX.) COLLECTOR-EMITTER VOLTAGE V CE (V) Fig. Collector Current vs. Collector-Emitter Voltage () Fig. 2 Collector-Emitter Saturation Voltage vs. Ambient Temperature LED POWER DISSIPATION PLED (mw) Fig. 3 LED Power Dissipation vs. Ambient Temperature (FOD84) LED POWER DISSIPATION PLED (mw) Fig. 4 LED Power Dissipation vs. Ambient Temperature () 7
8 Typical Electrical/Optical Characteristic Curves (Continued) T A = 25 C unless otherwise specified. RESPONSE TIME (μs) V CE = 2V Ic= 2mA Ta= 25 C LOAD RESISTANCE R L (kω) Fig. 5 Response Time vs. Load Resistance tr td ts tf COLLECTOR DARK CURRENT I CEO (na). V CE = 2V VOLTAGE GAIN A V (db) Fig. 7 Collector Dark Current vs. Ambient Temperature V CE =2V Ic = 2mA Ta = 25 C R L=k k FREQUENCY f (khz) Fig. 6 Frequency Response Test Circuit for Response Time Input R D R Vcc L Input Output Output td ts % 9% Test Circuit for Frequency Response Vcc R D RL Output tr tf 8
9 Reflow Profile Temperature ( C) TP TL Tsmax Tsmin Profile Feature Pb-Free Assembly Profile Temperature Min. (Tsmin) 5 C Temperature Max. (Tsmax) 2 C Time (t S ) from (Tsmin to Tsmax) Ramp-up Rate (t L to t P ) 6 2 seconds 3 C/second max. Liquidous Temperature (T L ) 27 C Time (t L ) Maintained Above (T L ) Max. Ramp-up Rate = 3 C/S Max. Ramp-down Rate = 6 C/S Preheat Area ts Time 25 C to Peak Time (seconds) tl 6 5 seconds tp Peak Body Package Temperature Time (t P ) within 5 C of 26 C Ramp-down Rate (T P to T L ) Time 25 C to Peak Temperature 26 C + C / 5 C 3 seconds 6 C/second max. 8 minutes max. Figure 2. Reflow Profile 9
10 Ordering Information Part Number Package Packing Method X DIP 4-Pin Tube ( units per tube) XS SMT 4-Pin (Lead Bend) Tube ( units per tube) XSD SMT 4-Pin (Lead Bend) Tape and Reel (, units per reel) X3 DIP 4-Pin, DIN EN/IEC option Tube ( units per tube) X3S SMT 4-Pin (Lead Bend), DIN EN/IEC option Tube ( units per tube) X3SD SMT 4-Pin (Lead Bend), DIN EN/IEC option Tape and Reel (, units per reel) X3W DIP 4-Pin,.4 Lead Spacing, DIN EN/IEC option Tube ( units per tube) Note: The product orderable part number system listed in this table also applies to the FOD84 products. "X" denotes the Current Transfer Ratio (CTR) options Marking Information 3 V 4 Definitions ON Semiconductor Logo 2 Device Number 3 VDE Mark (Note: Only appears on parts ordered with VDE option. See order entry table) 4 One Digit Year Code 5 Two Digit Work Week Ranging from to 53 6 Assembly Package Code X ZZ 87 5 Y Figure 2. Top Mark 6 2
11 Carrier Tape Specifications Ø.55±.5 Figure 22. Carrier Tape Specification Symbol Description Dimensions in mm (inches) W Tape wide 6 ±.3 (.63) P Pitch of sprocket holes 4 ±. (.5) F Distance of compartment 7.5 ±. (.295) P 2 2 ±. (.79) P Distance of compartment to compartment 2 ±. (.472) A Compartment.45 ±. (.4) B 5.3 ±. (.29) K 4.25 ±. (.67) P 2 P A P.75±. F B W.3±.5 K
12 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 952 E. 32nd Pkwy, Aurora, Colorado 8 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com Semiconductor Components Industries, LLC N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
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