MOC3051M, MOC3052M, MOC3053M. 6-Pin DIP Random-Phase Triac Driver Optocoupler (600 Volt Peak)
|
|
- Amanda Wells
- 6 years ago
- Views:
Transcription
1 MOC3051M, MOC3052M, MOC3053M 6-Pin DIP Random-Phase Triac Driver Optocoupler (600 Volt Peak) The MOC3051M, MOC3052M and MOC3053M consist of a GaAs infrared emitting diode optically coupled to a non-zero- crossing silicon bilateral AC switch (triac). These devices isolate low voltage logic from 115 V AC and 240 V AC lines to provide random phase control of high current triacs or thyristors. These devices feature greatly enhanced static dv/dt capability to ensure stable switching performance of inductive loads. Features Excellent I FT Stability IR Emitting Diode Has Low Degradation 600 V Peak Blocking Voltage Safety and Regulatory Approvals UL1577, 4,170 VAC RMS for 1 Minute DIN EN/IEC Typical Applications Solenoid/Valve Controls Lamp Ballasts Static AC Power Switch Interfacing Microprocessors to 115 V AC and 240 V AC Peripherals Solid State Relay Incandescent Lamp Dimmers Temperature Controls Motor Controls MDIP 6L WHITE MARKING DIAGRAM 1. F = Fairchild Logo 2. MOC3071 =Specific Device Code 3. V =DIN EN/IEC Option 4. X =One-Digit Year Code 5. YY =Two-Digit Work Week 6. Q =Assembly Package Code PIN CONNECTIONS ORDERING INFORMATION See detailed ordering and shipping information page 9 of this data sheet. Semiconductor Components Industries, LLC, September Rev. 2 :
2 SAFETY AND INSULATIONS RATINGS As per DIN EN/IEC , this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Characteristics < 150 VRMS I IV < 300 VRMS I IV Climatic Classification 40/85/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V PR Input-to-Output Test Voltage, Method A, V IORM x 1.6 = V PR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pc Input-to-Output Test Voltage, Method B, VIORM x = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pc 1360 V peak 1594 V peak V IORM Maximum Working Insulation Voltage 850 Vpeak V IOTM Highest Allowable Over-Voltage 6000 V peak External Creepage 7 mm External Clearance 7 mm External Clearance (for Option TV, 0.4" Lead Spacing) 10 mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm R IO Insulation Resistance at T S, V IO = 500 V > 10 9 Ω 2
3 MAXIMUM RATINGS (Note 1) T A = 25 C unless otherwise specified. Symbol Parameters Value Unit Total Device T STG Storage Temperature -40 to +150 C T OPR Operating Temperature -40 to +85 C TJ Junction Temperature Range -40 to +100 C T SOL Lead Solder Temperature 260 for 10 seconds C PD Emitter Total Device Power Dissipation at 25 C Ambient 330 mw Derate Above 25 C 4.4 mw/ C IF Continuous Forward Current 60 ma VR Reverse Voltage 3 V PD Detector Total Power Dissipation at 25 C Ambient 100 mw Derate Above 25 C 1.33 mw/ C V DRM Off-State Output Terminal Voltage 600 V I TSM Peak Non-Repetitive Surge Current (Single Cycle 60 Hz Sine Wave) 1 A Total Power Dissipation at 25 C Ambient 300 mw PD Derate Above 25 C 4 mw/ C 1. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 3
4 ELECTRICAL CHARACTERISTICS T A = 25 C unless otherwise specified. INDIVIDUAL COMPONENT CHARACTERISTICS Symbol Parameters Test Conditions Min. Typ. Max. Unit EMITTER V F Input Forward Voltage I F = 10 ma V I R Reverse Leakage Current V R = 3 V µa DETECTOR I DRM Peak Blocking Current, Either Direction V DRM = 600 V, I F = 0 (Note 2) na V TM Peak On-State Voltage, Either Direction I TM = 100 ma peak, I F = V dv/dt Critical Rate of Rise of Off-State Voltage I F = 0, V DRM = 600 V 1000 V/µs TRANSFER CHARACTERISTICS Symbol DC Characteristics Test Conditions Device Min. Typ. Max. Unit I FT LED Trigger Current, Either Direction Main Terminal Voltage = 3 V (Note 3) MOC3051M 15 MOC3052M 10 MOC3053M 6 ma I H Holding Current, Either Direction All 540 µa ISOLATION CHARACTERISTICS Symbol Characteristic Test Conditions Min. Typ. Max. Unit VISO Input-Output Isolation Voltage (Note 4) f = 60 Hz, t = 1 Minute 4170 VAC RMS R ISO Isolation Resistance VI-O = 500 V DC Ω C ISO Isolation Capacitance V = 0 V, f = 1 MHz 0.2 pf 2. Test voltage must be applied within dv/dt rating. 3. All devices will trigger at an IF value greater than or equal to the maximum IFT specification. For optimum operation over temperature and lifetime of the device, the LED should be biased with an IF that is at least 50% higher than the maximum IFT specification. The IF should not exceed the absolute maximum rating of 60 ma. Example: For MOC3052M, the minimum IF bias should be 10 ma x 150% = 15 ma 4. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are common. 4
5 TYPICAL CHARACTERISTICS V F - FORWARD VOLTAGE (V) T A = -40 C T A = 25 C T A = 85 C I TM - ON-STATE CURRENT (ma) I F - LED FORWARD CURRENT (ma) Figure 1. LED Forward Voltage vs. Forward Current V TM - ON-STATE VOLTAGE (V) Figure 2. On-State Characteristics I FT (NORMALIZED) = I FT (T A ) / I FT (T A =25 C) NORMALIZED TO T A = 25 C T A - AMBIENT TEMPERATURE ( C) I FT (NORMALIZED) = I FT (PW) / I FT (PW=100µs) NORMALIZED TO PW = 100µs PW - LED TRIGGER PULSE WIDTH (µs) Figure 3. LED Trigger Current vs. Ambient Temperature Figure 4. LED Trigger Current vs. LED Pulse Width I H (NORMALIZED) = I H (T A ) / I H (T A =25 C) NORMALIZED TO T A = 25 C T A - AMBIENT TEMPERATURE ( C) Figure 5. Holding Current vs. Ambient Temperature I DRM - LEAKAGE CURRENT (na) V DRM = 600 V T A - AMBIENT TEMPERATURE ( C) Figure 6. Leakage Current vs. Ambient Temperature 5
6 APPLICATIONS INFORMATION Basic Triac Driver Circuit The random phase triac drivers MOC3051M, MOC3052M and MOC3053M can allow snubberless operations in applications where load is resistive and the external generated noise in the AC line is below its guaranteed dv/dt withstand capability. For these applications, a snubber circuit is not necessary when a noise insensitive power triac is used. Figure 7 shows the circuit diagram. The triac driver is directly connected to the triac main terminal 2 and a series resistor R which limits the current to the triac driver. Current limiting resistor R must have a minimum value which restricts the current into the driver to maximum 1 A. The power dissipation of this current limiting resistor and the triac driver is very small because the power triac carries the load current as soon as the current through driver and current limiting resistor reaches the trigger current of the power triac. The switching transition times for the driver is only one micro second and for power triacs typical four micro seconds. Triac Driver Circuit for Noisy Environments When the transient rate of rise and amplitude are expected to exceed the power triacs and triac drivers maximum ratings a snubber circuit as shown in Figure 8 is recommended. Fast transients are slowed by the R-C snubber and excessive amplitudes are clipped by the Metal Oxide Varistor MOV. Triac Driver Circuit for Extremely Noisy Environments As specified in the noise standards IEEE472 and IEC Industrial control applications do specify a maximum transient noise dv/dt and peak voltage which is superimposed onto the AC line voltage. In order to pass this environment noise test a modified snubber network as shown in Figure 9 is recommended. LED Trigger Current versus Temperature Recommended operating LED control current I F lies between the guaranteed I FT and absolute maximum I F. Figure 3 shows the increase of the trigger current when the device is expected to operate at an ambient temperature below 25 C. Multiply the datasheet guaranteed I FT with the normalized I FT shown on this graph and an allowance for LED degradation over time. Example: I FT = 10 ma, LED degradation factor = 20% I F at -40 C = 10 ma x 1.25 x 120% = 15 ma LED Trigger Current vs. Pulse Width Random phase triac drivers are designed to be phase controllable. They may be triggered at any phase angle within the AC sine wave. Phase control may be accomplished by an AC line zero cross detector and a variable pulse delay generator which is synchronized to the zero cross detector. The same task can be accomplished by a microprocessor which is synchronized to the AC zero crossing. The phase controlled trigger current may be a very short pulse which saves energy delivered to the input LED. LED trigger pulse currents shorter than 100 µs must have increased amplitude as shown on Figure 4. This graph shows the dependency of the trigger current I FT versus the pulse width. I FT in this graph is normalized in respect to the minimum specified I FT for static condition, which is specified in the device characteristic. The normalized I FT has to be multiplied with the devices guaranteed static trigger current. Example: I FT = 10 ma, Trigger PW = 4 µs I F (pulsed) = 10 ma x 3 = 30 ma Minimum LED Off Time in Phase Control Applications In phase control applications, one intends to be able to control each AC sine half wave from 0 to 180. Turn on at 0 means full power and turn on at 180 means zero power. This is not quite possible in reality because triac driver and triac have a fixed turn on time when activated at zero degrees. At a phase control angle close to 180 the driver s turn on pulse at the trailing edge of the AC sine wave must be limited to end 200 µs before AC zero cross as shown in Figure 10. This assures that the triac driver has time to switch off. Shorter times may cause loss of control at the following half cycle. Static dv/dt Critical rate of rise of off-state voltage or static dv/dt is a triac characteristic that rates its ability to prevent false triggering in the event of fast rising line voltage transients when it is in the off-state. When driving a discrete power triac, the triac driver optocoupler switches back to offstate once the power triac is triggered. However, during the commutation of the power triac in application where the load is inductive, both triacs are subjected to fast rising voltages. The static dv/dt rating of the triac driver optocoupler and the commutating dv/dt rating of the power triac must be taken into consideration in snubber circuit design to prevent false triggering and commutation failure. 6
7 V CC R LED TRIAC DRIVER R POWER TRIAC AC LINE CONTROL RET. Q R LED = (V CC V FLED V SATQ) / I FT R = V PAC / I TSM Figure 7. Basic Driver Circuit LOAD Figure 8. Triac Driver Circuit for Noisy Environments Figure 9. Triac Driver Circuit for Extremely Noisy Environments AC Line LED PW LED turn off min. 200µs LED Current Figure 10. Minimum Time for LED Turn Off to Zero Crossing 7
8 REFLOW PROFILE Profile Feature Pb-Free Assembly Profile Temperature Minimumm (Tsmin) 150 C Temperature Maximumm (Tsmax) 200 C Time (ts) from (Tsmin to Tsmax) 60 seconds to 120 seconds Ramp-up Rate (TL to TP) 3 C/second maximum Liquidous Temperaturee (TL) 217 C Time (tl) Maintained Above (TL) 60 seconds to 150 seconds Peak Body Package Temperature 260 C +0 C / 5 C Time (tp) within 5 C off 260 C 30 seconds Ramp-down Rate (TP to TL) 6 C/second maximum Time 25 C to Peak Temperature 8 minutes maximum Figure 11. Reflow Profile 8
9 ORDERING INFORMATION (Note 5) Device Package Shipping MOC3051M DIP 6-Pin Tube (50 Units) MOC3051SM SMT 6-Pin (Lead Bend) Tube (50 Units) MOC3051SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) MOC3051VM DIP 6-Pin, DIN EN/IEC Option Tube (50 Units) MOC3051SVM SMT 6-Pin (Lead Bend), DIN EN/IEC Option Tube (50 Units) MOC3051SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC Option Tape and Reel (1000 Units) MOC3051TVM DIP 6-Pin, 0.4 Lead Spacing, DIN EN/IEC Option Tube (50 Units) 5. The product orderable part number system listed in this table also applies to the MOC3052M and MOC3053M product families. 9
10 PACKAGING DIMENSIONS (TYP) PIN (TYP) (MAX) (MIN) (0.86) BSC NOTES: A) NO STANDARD APPLIES TO THIS PACKAGE. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSION D) DRAWING FILENAME AND REVSION: MKT-N06BREV4. 6 LEAD MDIP OPTO WHITE 0.3" WIDE 10
11 (1.78) (2.54) (1.52) (10.54) (7.49) PIN (MAX) (0.76) LAND PATTERN RECOMMENDATION 0.38 (MIN) (BSC) (0.86) NOTES: A) NO STANDARD APPLIES TO THIS PACKAGE. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSION D) DRAWING FILENAME AND REVSION : MKT-N06CREV (8.13) 6-LEAD MDIP OPTO WHITE SURFACE MOUNT FORM 11
12 PIN (MAX) (MIN) (0.86) BSC NOTES: A) NO STANDARD APPLIES TO THIS PACKAGE. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSION D) DRAWING FILENAME AND REVSION: MKT-N06Drev4 6 LEAD MDIP OPTO WHITE 0.4" LEAD SPACING 12
13 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor E. 32nd Pkwy, Aurora, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
Is Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationFOD819 Series. FOD819 4-Pin DIP High Speed Phototransistor Optocouplers
FOD89 4-Pin DIP High Speed Phototransistor Optocouplers Description The FOD89 consists of a gallium arsenide (GaAs) infra red emitting diode, driving a high speed photo detector with integrated base to
More informationHMHA281, HMHA2801 Series. 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers
4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers Description The HMHA28 and HMHA280 series devices consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need
More informationMOC3051M, MOC3052M 6-Pin DIP Random-Phase Optoisolators Triac Drivers (600 Volt Peak)
MOC3051M, MOC3052M 6-Pin DIP Random-Phase Optoisolators Triac Drivers (600 Volt Peak) Features Excellent I FT Stability IR Emitting Diode Has Low Degradation 600 V Peak Blocking Voltage Safety and Regulatory
More informationMOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M 6-Pin DIP Random-Phase Triac Driver Output Optocoupler (250/400 Volt Peak)
MOC3010M, MOC3011M, MOC301M, MOC300M, MOC301M, MOC30M, MOC303M 6-Pin DIP Random-Phase Triac Driver Output Optocoupler (0/400 Volt Peak) Features Excellent I FT Stability IR Emitting Diode Has Low Degradation
More informationFODM3011, FODM3012, FODM3022, FODM3023, FODM3052, FODM Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers
FODM3, FODM3, FODM3, FODM33, FODM35, FODM353 -Pin Full Pitch Mini-Flat Package Random-Phase Triac Driver Output Optocouplers Features Compact -pin Surface Mount Package (. mm Maximum Standoff Height) Peak
More informationFOD814 Series, FOD817 Series 4-Pin DIP Phototransistor Optocouplers
FOD84 Series, Series 4-Pin DIP Phototransistor Optocouplers Features AC Input Response (FOD84) Current Transfer Ratio in Selected Groups: FOD84: 2 3% : 5 6% FOD84A: 5 5% A: 8 6% B: 3 26% C: 2 4% D: 3 6%
More informationMOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M 6-Pin DIP Random-Phase Optoisolators Triac Driver Output (250/400 Volt Peak)
March 2014 MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M 6-Pin DIP Random-Phase Optoisolators Triac Driver Output (250/400 Volt Peak) Features Excellent I FT Stability IR Emitting
More information6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVERS (600 VOLT PEAK)
PACKAGE SCHEMATIC 6 6 ANODE CATHODE 2 6 MAIN TERM. 5 NC* N/C 3 4 MAIN TERM. 6 *DO NOT CONNECT (TRIAC SUBSTRATE) DESCRIPTION The and consist of a AlGaAs infrared emitting diode optically coupled to a non-zero-crossing
More informationFOD8173, FOD8173T. 3.3 V/5 V, 20 Mbit/sec, Logic Gate Optocoupler in Stretched Body SOP 6-Pin
FOD8173, FOD8173T 3.3 V/5 V, 20 Mbit/sec, Logic Gate Optocoupler in Stretched Body SOP 6-Pin Description The FOD8173 series packaged in a stretched body 6 pin small outline plastic package, consists of
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationBAV ma 70 V High Conductance Ultra-Fast Switching Diode
BAV99 200 ma 70 V High Conductance Ultra-Fast Switching Diode Features High Conductance: I F = 200 ma Fast Switching Speed: t rr < 6 ns Maximum Small Plastic SOT-2 Package Series-Pair Configuration Applications
More informationBAV103 High Voltage, General Purpose Diode
BAV3 High Voltage, General Purpose Diode Cathode Band SOD80 Description A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless
More informationFJP13007 High Voltage Fast-Switching NPN Power Transistor
FJP3007 High Voltage Fast-Switching NPN Power Transistor Features High Voltage High Speed Power Switch Application High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching
More informationFGH12040WD 1200 V, 40 A Field Stop Trench IGBT
FGH12040WD 1200 V, 40 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J = 175 o C Positive Temperature Co-efficient for Easy Parallel Operating Low Saturation Voltage: V CE(sat) = 2.3
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationFGH40N60SFDTU-F V, 40 A Field Stop IGBT
FGH40N60SFDTU-F085 600 V, 40 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) = 2.3 V @ I C = 40 A High Input Impedance Fast Switching RoHS Compliant Qualified to Automotive
More informationQED223 Plastic Infrared Light Emitting Diode
QED223 Plastic Infrared Light Emitting Diode Features λ = 880nm Chip material = AlGaAs Package type: T-1 3/4 (5mm lens diameter) Matched photosensor: QSD123/QSD124 Medium wide emission angle, 30 High output
More informationAbsolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified BUZ11 Drain to Source Breakdown Voltage (Note 1)
Data Sheet September 213 File Number 2253.2 N-Channel Power MOSFET 5V, 3A, 4 mω This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
More information6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT (250/400 VOLT PEAK)
-PIN DIP RANDOM-PHASE PACKAGE SCHEMATIC ANODE MAIN TERM. CATHODE NC* N/C 3 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) DESCRIPTION The MOC30XM and MOC30XM series are optically isolated triac driver devices.
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationMM74HC14 Hex Inverting Schmitt Trigger
MM74HC14 Hex Inverting Schmitt Trigger Features Typical propagation delay: 13ns Wide power supply range: 2V 6V Low quiescent current: 20µA maximum (74HC Series) Low input current: 1µA maximum Fanout of
More informationKA431 / KA431A / KA431L Programmable Shunt Regulator
KA431 / KA431A / KA431L Programmable Shunt Regulator Features Programmable Output Voltage to 36 V Low Dynamic Output Impedance: 0.2 Ω (Typical) Sink Current Capability: 1.0 to 100 ma Equivalent Full-Range
More informationFeatures D G. T A =25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1a) 3.8. (Note 1b) 1.6
FDD564P 6V P-Channel PowerTrench MOSFET FDD564P General Description This 6V P-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.
More informationFeatures. TA=25 o C unless otherwise noted
NDS6 NDS6 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
More informationRURP1560-F085 15A, 600V Ultrafast Rectifier
RURP56F85 5A, 6V Ultrafast Rectifier Features High Speed Switching ( t rr =52ns(Typ.) @ I F =5A ) Low Forward Voltage( V F =.5V(Max.) @ I F =5A ) Avalanche Energy Rated AECQ Qualified Applications Automotive
More informationMOC3081M, MOC3082M, MOC3083M 6-Pin Zero-Cross Optoisolators Triac Driver Output (800 Volt Peak)
MOC3081M, MOC308M, MOC3083M 6-Pin Zero-Cross Optoisolators Triac Driver Output (800 Volt Peak) Features Underwriters Laboratories (UL) recognized file #E90700, Volume VDE recognized file #10497 add option
More informationFGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT
FGH4TSMD V, 4 A Field Stop Trench IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.9 V(Typ.) @ I C = 4 A High Input Impedance Fast Switching RoHS Compliant Applications UPS, welder,
More informationNXH80B120H2Q0SG. Dual Boost Power Module V, 40 A IGBT with SiC Rectifier
NXH8B1HQSG Dual Boost Power Module 1 V, 4 A IGBT with SiC Rectifier The NXH8B1HQSG is a power module containing a dual boost stage consisting of two 4 A / 1 V IGBTs, two 15 A / 1 V silicon carbide diodes,
More information6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT (800 VOLT PEAK)
PACKAGE SCHEMATIC ANODE 1 6 MAIN TERM. CATHODE 2 5 NC* N/C 3 ZERO CROSSING CIRCUIT 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) DESCRIPTION The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs
More informationMM74HC04 Hex Inverter
MM74HC04 Hex Inverter Features Typical propagation delay: 8ns Fan out of 10 LS-TTL loads Quiescent power consumption: 10µW maximum at room temperature Low input current: 1µA maximum General Description
More informationN-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted
BSS BSS N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high
More informationDevice Marking Device Package Reel Size Tape Width Quantity FQT1N60C FQT1N60C SOT mm 12mm 4000
FQT1N60C N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced
More informationN-Channel Logic Level PowerTrench MOSFET
FDN56N-F85 N-Channel Logic Level PowerTrench MOSFET 6 V,.6 A, 98 mω Features R DS(on) = 98 mω at V GS = 4.5 V, I D =.6 A R DS(on) = 8 mω at V GS = V, I D =.7 A Typ Q g(tot) = 9. nc at V GS = V Low Miller
More informationKSC2383 NPN Epitaxial Silicon Transistor
KSC2383 NPN Epitaxial Silicon Transistor TO-92L. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSC2383OTA C2383 O- TO-92 3L Ammo KSC2383YTA C2383 Y- TO-92
More informationJ109 / MMBFJ108 N-Channel Switch
J9 / MMBFJ8 N-Channel Switch Features This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from process 8 J9 / MMBFJ8 N-Channel Switch 3 2 TO-92
More informationElectrical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Bre
FQD8P10TM-F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology.
More informationFFSP1065A/D. Silicon Carbide Schottky Diode 650 V, 10 A Features. FFSP1065A Silicon Carbide Schottky Diode. Description.
FFSP65A Silicon Carbide Schottky Diode 65 V, A Features Max Junction Temperature 75 o C Avalanche Rated 6 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationFDN327N FDN327N. N-Channel 1.8 Vgs Specified PowerTrench MOSFET. Absolute Maximum Ratings
N-Channel.8 Vgs Specified PowerTrench MOSFET General Description This V N-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.
More informationN-Channel PowerTrench MOSFET
FDMS86369-F85 N-Channel PowerTrench MOSFET 8 V, 65 A, 7.5 mω Features Typical R DS(on) = 5.9 mω at V GS = V, I D = 65 A Typical Q g(tot) = 35 nc at V GS = V, I D = 65 A UIS Capability RoHS Compliant Qualified
More informationN-Channel PowerTrench MOSFET
FDBL86363-F85 N-Channel PowerTrench MOSFET 8 V, 4 A,. mω Features Typical R DS(on) =.5 mω at V GS = V, I D = 8 A Typical Q g(tot) = 3 nc at V GS = V, I D = 8 A UIS Capability RoHS Compliant Qualified to
More informationFDN335N N-Channel 2.5V Specified PowerTrench TM MOSFET
N-Channel.5V Specified PowerTrench TM MOSFET General Description This N-Channel.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to
More informationPacking Method. Symbol Parameter Test Conditions Min. Typ. Max. Unit V CE(sat) Saturation Voltage V C = 25 A, V GE = 15 V,
FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT Features NPT Trench Technology, Positive Temperature Coefficient Low Saturation Voltage: V CE(sat), typ = 2. V @ = 25 A and Low Switching Loss: E off, typ =.96 mj
More informationFGH50T65SQD 650 V, 50 A Field Stop Trench IGBT
FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J =75 o C Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage:
More informationPUBLICATION ORDERING INFORMATION. Semiconductor Components Industries, LLC
FDS39 FDS39 V N-Channel Dual PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or
More informationElerical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BS Drain-Source Breakd
FQD3P50 P-Channel QFET MOSFET - 500 V, -.1 A, 4.9 Ω Description This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced
More informationNSVS50030SB3 NSVS50031SB3. Bipolar Transistor ( )50 V, ( )3 A, Low V CE (sat), (PNP)NPN Single
NSVSSB, Bipolar Transistor ( ) V, ( ) A, Low V CE (sat), (PNP)NPN Single This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for
More informationFDS8984 N-Channel PowerTrench MOSFET 30V, 7A, 23mΩ
FDS898 N-Channel PowerTrench MOSFET V, 7A, 3mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or
More informationFFSP1665A/D. Silicon Carbide Schottky Diode 650 V, 16 A Features. FFSP1665A Silicon Carbide Schottky Diode. Description.
FFSP1665A Silicon Carbide Schottky Diode 65 V, 16 A Features Max Junction Temperature 175 o C Avalanche Rated 81 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationDescription. - Derate above 25 C 0.39 W/ C T J, T STG Operating and Storage Temperature Range -55 to +150 C
FQD5N60C / FQU5N60C N-Channel QFET MOSFET 600 V,.8 A,.5 Ω Features.8 A, 600 V, R DS(on) =.5 Ω (Max.) @ = 10 V, = 1.4 A Low Gate Charge ( Typ. 15 nc) Low Crss (Typ. 6.5 pf) 100% Avalanche Tested RoHS compliant
More informationTIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor
TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Features Medium Power Linear Switching Applications Complementary to TIP125 / TIP126 / TIP127 Ordering Information 1 TO-220 1.Base 2.Collector
More information74VHC14 Hex Schmitt Inverter
74HC14 Hex Schmitt Inverter Features High Speed: t PD = 5.5 ns (Typ.) at CC = 5 Low Power Dissipation: I CC = 2 μa (Max.) at T A = 25 C High Noise Immunity: NIH = NIL = 28% CC (Min.) Power down protection
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More information650V, 40A Field Stop Trench IGBT
FGHT65SPD-F5 65V, A Field Stop Trench IGBT Features AEC-Q Qualified Low Saturation Voltage : V CE(sat) =.5 V(Typ.) @ I C = A % of the parts are dynamically tested (Note ) Short Circuit Ruggedness > 5 μs
More informationNXH80T120L2Q0S2G/S2TG, NXH80T120L2Q0P2G. Q0PACK Module
NXH8T2L2QS2G/S2TG, NXH8T2L2QP2G QPACK Module The NXH8T2L2QS2/P2G is a power module containing a T type neutral point clamped (NPC) three level inverter stage. The integrated field stop trench IGBTs and
More informationGeneral Description. Applications. Power management Load switch Q2 3 5 Q1
FDG6342L Integrated Load Switch Features Max r DS(on) = 150mΩ at V GS = 4.5V, I D = 1.5A Max r DS(on) = 195mΩ at V GS = 2.5V, I D = 1.3A Max r DS(on) = 280mΩ at V GS = 1.8V, I D = 1.1A Max r DS(on) = 480mΩ
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need
More informationFDD8444L-F085 N-Channel PowerTrench MOSFET
M E N FDD8444L-F85 N-Channel PowerTrench MOSFET 4V, 5A, 6.mΩ Features Applications Typ r DS(on) = 3.8mΩ at V GS = 5V, I D = 5A Automotive Engine Control Typ Q g(tot) = 46nC at V GS = 5V Powertrain Management
More informationMOC3061M, MOC3062M, MOC3063M, MOC3162M, MOC3163M 6-Pin DIP Zero-Cross Phototriac Driver Optocoupler (600 Volt Peak)
MOC30M, MOC30M, MOC303M, MOC3M, MOC33M -Pin DIP Zero-Cross Phototriac Driver Optocoupler (00 Volt Peak) Features Simplifies logic control of 5/40 VAC power Zero voltage crossing dv/dt of 000V/µs guaranteed
More informationFDS8949 Dual N-Channel Logic Level PowerTrench MOSFET
FDS899 Dual N-Channel Logic Level PowerTrench MOSFET V, 6A, 9mΩ Features Max r DS(on) = 9mΩ at V GS = V Max r DS(on) = 36mΩ at V GS =.5V Low gate charge High performance trench technology for extremely
More informationExtended V GSS range ( 25V) for battery applications
Dual Volt P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
More informationRURG8060-F085 80A, 600V Ultrafast Rectifier
RURG86F85 8A, 6V Ultrafast Rectifier Features High Speed Switching ( t rr =74ns(Typ.) @ I F =8A ) Low Forward Voltage( V F =.34V(Typ.) @ I F =8A ) Avalanche Energy Rated AECQ Qaulified Applications Automotive
More informationNXH160T120L2Q2F2SG. Split T-Type NPC Power Module 1200 V, 160 A IGBT, 600 V, 100 A IGBT
NXH6TLQFSG Split T-Type NPC Power Module V, 6 A IGBT, 6 V, A IGBT The NXH6TLQFSG is a power module containing a split T type neutral point clamped three level inverter, consisting of two 6 A / V Half Bridge
More informationFDD V P-Channel POWERTRENCH MOSFET
3 V P-Channel POWERTRENCH MOSFET General Description This P Channel MOSFET is a rugged gate version of ON Semiconductor s advanced POWERTRENCH process. It has been optimized for power management applications
More informationFCH023N65S3. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 75 A, 23 m
Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 65 V, 75 A, 23 m Description SUPERFET III MOSFET is ON Semiconductor s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
More informationDual N-Channel, Digital FET
FDG6301N-F085 Dual N-Channel, Digital FET Features 25 V, 0.22 A continuous, 0.65 A peak. R DS(ON) = 4 @ V GS = 4.5 V, R DS(ON) = 5 @ V GS = 2.7 V. Very low level gate drive requirements allowing directoperation
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationHMHA281, HMHA2801 Series 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers
June 205 HMHA28, HMHA280 Series 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers Features Compact 4-pin Package 2.4 mm Maximum Standoff Height Half-pitch Leads for Optimum Board Space Savings Current
More informationN-Channel SuperFET MOSFET
FCD5N-F5 N-Channel SuperFET MOSFET V,. A,. Ω Features V,.A, typ. R ds(on) =mω@v GS =V Ultra Low Gate Charge (Typ. Q g = nc) UIS Capability RoHS Compliant Qualified to AEC Q Applications Automotive On Board
More informationN-Channel PowerTrench MOSFET
FDBL8636-F85 N-Channel PowerTrench MOSFET 8 V, 3 A,.4 mω Features Typical R DS(on) =. mω at V GS = V, I D = 8 A Typical Q g(tot) = 72 nc at V GS = V, I D = 8 A UIS Capability RoHS Compliant Qualified to
More informationFDS8935. Dual P-Channel PowerTrench MOSFET. FDS8935 Dual P-Channel PowerTrench MOSFET. -80 V, -2.1 A, 183 mω
FDS935 Dual P-Channel PowerTrench MOSFET - V, -. A, 3 mω Features Max r DS(on) = 3 mω at V GS = - V, I D = -. A Max r DS(on) = 7 mω at V GS = -.5 V, I D = -.9 A High performance trench technology for extremely
More informationNTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL
NTMFDCN Dual N-Channel Power MOSFET 3 V, High Side A / Low Side 7 A, Dual N Channel SOFL Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationRURD660S9A-F085 Ultrafast Power Rectifier, 6A 600V
RURD66S9AF85 Ultrafast Power Rectifier, 6A 6V Features High Speed Switching ( t rr =63ns(Typ.) @ =6A ) Low Forward Voltage( V F =.26V(Typ.) @ =6A ) Avalanche Energy Rated AECQ Qualified Applications General
More informationSS13FL, SS14FL. Surface Mount Schottky Barrier Rectifier
SS13FL, SS14FL Surface Mount Schottky Barrier Rectifier Features Ultra Thin Profile Maximum Height of 1.08 mm UL Flammability 94V 0 Classification MSL 1 Green Mold Compound These Devices are Pb Free, Halogen
More informationMAC223A6, MAC223A8, MAC223A10. Triacs. Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 400 thru 800 VOLTS
MAC3A6, MAC3A8, MAC3A Triacs Preferred Device Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power
More informationFDPC4044. Common Drain N-Channel PowerTrench MOSFET. FDPC4044 Common Drain N-Channel PowerTrench MOSFET. 30 V, 27 A, 4.
FDPC444 Common Drain N-Channel PowerTrench MOSFET 3 V, 7 A, 4.3 mω Features Max r SS(on) = 4.3 mω at V GS = V, I SS = 7 A Max r SS(on) = 6.4 mω at V GS = 4.5 V, I SS = 3 A Pakage size/height: 3.3 x 3.3
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationOptocoupler, Phototriac Output, 400 V DRM
VO32, VO321, VO322, VO323 Optocoupler, Phototriac Output, 4 V DRM DESCRIPTION i1794-14 Note: pin 5 must not be connected ~ ~ 6 5 4 1 2 3 A (+) C (-) NC The VO32 series consists of a phototriac optically
More informationNTH027N65S3F N-Channel SuperFET III FRFET MOSFET 650 V, 75 A, 27.4 mω Features
NTH027N65S3F N-Channel SuperFET III FRFET MOSFET 650 V, 75 A, 27.4 mω Features 700 V @ T J = 50 o C Typ. R DS(on) = 23 mω Ultra Low Gate Charge (Typ. Q g = 259 nc) Low Effective Output Capacitance (Typ.
More informationFeatures -4 A, -30 V. R DS(ON) G 3. = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage -30 V
FC65P Single P-Channel, Logic Level, PowerTrench TM MOSFET General escription This P-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationRHRP A, 1200 V, Hyperfast Diode. Features. Applications. Ordering Information. Packaging. Symbol. Data Sheet November 2013
RHRP2 Data Sheet November 23 A, 2 V, Hyperfast Diode Features Hyperfast Recovery = 7 ns (@ I F = A) The RHRP2 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast
More informationP-Channel PowerTrench MOSFET
FDD4685-F085 P-Channel PowerTrench MOSFET -40 V, -32 A, 35 mω Features Typical R DS(on) = 23 m at V GS = -10V, I D = -8.4 A Typical R DS(on) = 30 m at V GS = -4.5V, I D = -7 A Typical Q g(tot) = 19 nc
More informationFPF1005-FPF1006 IntelliMAX TM Advanced Load Management Products
FPF5-FPF IntelliMAX TM Advanced Load Management Products Features 1. to 5.5V Input Voltage Range Typical R DS(ON) = 5mΩ @ = 5.5V Typical R DS(ON) = 55mΩ @ ESD Protected, above V HBM Applications PDAs Cell
More informationNCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection
Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to
More informationFDH50N50 / FDA50N50 N-Channel UniFET TM MOSFET 500 V, 48 A, 105 mω Features
FDH5N5 / FDA5N5 N-Channel UniFET TM MOSFET 5 V, 48 A, 15 mω Features R DS(on) = 89 mω (Typ.) @ = 1 V, = 24 A Low Gate Charge (Typ. 15 nc) Low C rss (Typ. 45 pf) 1% Avalanche Tested Improved dv/dt Capability
More informationPackage Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity V36P ISL9V36P3-F8 TO-22AB Tube N/A Electrical Cha
ISL9V36P3-F8 EcoSPARK mj, 36V, N-Channel Ignition IGBT General Description The ISL9V36P3_F8 is the next generation IGBT that offer outstanding SCIS capability in the TO-22 plastic package. This device
More informationFDPF18N20FT-G N-Channel UniFET TM FRFET MOSFET
FDPF8N20FT-G N-Channel UniFET TM FRFET MOSFET 200 V, 8 A, 40 m Features R DS(on) = 29 mω (Typ.) @ V GS = 0 V, I D = 9 A Low Gate Charge (Typ. 20 nc) Low C rss (Typ. 24 pf) 00% Avalanche Tested Improve
More informationS1AFL - S1MFL. Surface General-Purpose Rectifier
SAFL - SMFL Surface General-Purpose Rectifier Features Ultra Thin Profile Maximum Height of.08 mm UL Flammability 94V 0 Classification MSL Green Mold Compound These Devices are Pb Free, Halogen Free Free
More informationFeatures 2.5 A, 30 V. R DS(ON) = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage 30 V
FC5AN ual N-Channel Logic Level PowerTrench TM MOSFET General escription Features These N-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially
More informationKSH122 / KSH122I NPN Silicon Darlington Transistor
KSH22 / KSH22I NPN Silicon Darlington Transistor Features D-PAK for Surface Mount Applications High DC Current Gain Built-in Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight
More informationH11G1M, H11G2M 6-Pin DIP High Voltage Photodarlington Optocouplers
HGM, HG2M 6-Pin DIP High Voltage Photodarlington Optocouplers Features High BV CEO : 00 V Minimum for HGM 80 V Minimum for HG2M High Sensitivity to Low Input Current (Minimum 500% CTR at I F = ma) Low
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationBottom. Pin 1 S S S D D D. Symbol Parameter Ratings Units V DS Drain to Source Voltage 30 V V GS Gate to Source Voltage (Note 4) ±20 V
D D D FDMS7658AS N-Channel PowerTrench SyncFET TM 3 V, 76 A,.9 mω Features Max r DS(on) =.9 mω at V GS = V, I D = 8 A Max r DS(on) =. mω at V GS = 7 V, I D = 6 A Advanced Package and Silicon Combination
More informationDescription. Symbol Parameter Ratings Units V DSS Drain to Source Voltage 500 V V GSS Gate to Source Voltage ±30 V
FDD5N50FTM-WS N-Channel UniFET TM FRFET MOSFET 500 V, 3.5 A,.55 Ω Features R DS(on) =.25Ω (Typ.) @ V GS = 0 V, I D =.75 A Low Gate Charge (Typ. nc) Low C rss (Typ. 5 pf) Fast Switching 00% Avalanche Tested
More information