MOC3061M, MOC3062M, MOC3063M, MOC3162M, MOC3163M 6-Pin DIP Zero-Cross Phototriac Driver Optocoupler (600 Volt Peak)
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1 MOC30M, MOC30M, MOC303M, MOC3M, MOC33M -Pin DIP Zero-Cross Phototriac Driver Optocoupler (00 Volt Peak) Features Simplifies logic control of 5/40 VAC power Zero voltage crossing dv/dt of 000V/µs guaranteed (MOC3X-M), 00V/µs guaranteed (MOC30X-M) VDE recognized (File # 947) ordering option V (e.g., MOC303V-M) Underwriters Laboratories (UL) recognized (File #E90700, volume ) Applications Solenoid/valve controls Static power switches Temperature controls AC motor starters Lighting controls AC motor drives E.M. contactors Solid state relays Schematic ANODE CATHODE N/C 3 ZERO CROSSING CIRCUIT MAIN TERM. 5 4 NC* MAIN TERM. Description The MOC30XM and MOC3XM devices consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage crossing bilateral triac driver. They are designed for use with a triac in the interface of logic systems to equipment powered from 5/40 VAC lines, such as solid-state relays, industrial controls, motors, solenoids and consumer appliances, etc. Package Outlines *DO NOT CONNECT (TRIAC SUBSTRATE)
2 Absolute Maximum Ratings (T A = 5 C unless otherwise noted) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameters Device Value Units TOTAL DEVICE T STG Storage Temperature All -40 to +50 C T OPR Operating Temperature All -40 to +85 C T SOL Lead Solder Temperature All 0 for 0 sec C T J Junction Temperature Range All -40 to +00 C V ISO Isolation Surge Voltage () All 7500 Vac(pk) (peak AC voltage, 0Hz, sec. duration) P D Total Device Power 5 C Ambient All 50 mw Derate above 5 C.94 mw/ C EMITTER I F Continuous Forward Current All 0 ma V R Reverse Voltage All V P D Total Power 5 C Ambient All 0 mw Derate above 5 C.4 mw/ C DETECTOR V DRM Off-State Output Terminal Voltage All 00 V I TSM Peak Repetitive Surge Current All A (PW = 00µs, 0pps) P D Total Power 5 C Ambient All 50 mw Derate above 5 C.7 mw/ C Note:. Isolation surge voltage, V ISO, is an internal device dielectric breakdown rating. For this test, Pins and are common, and Pins 4, 5 and are common.
3 Electrical Characteristics (T A = 5 C Unless otherwise specified) Individual Component Characteristics Symbol Parameters Test Conditions Device Min. Typ.* Max. Units EMITTER V F Input Forward Voltage I F = 30mA All.3.5 V I R Reverse Leakage Current V R = V All µa DETECTOR I DRM dv/dt Peak Blocking Current, Either Direction Critical Rate of Rise of Off-State Voltage Transfer Characteristics Zero Crossing Characteristics Isolation Characteristics V DRM = 00V, I F = 0 () MOC3XM 0 00 MOC30XM I F = 0 (Figure 9) (3) MOC30XM MOC3XM 000 Symbol DC Characteristics Test Conditions Device Min. Typ.* Max. Units I FT V TM I H LED Trigger Current (rated I FT ) Peak On-State Voltage, Either Direction Holding Current, Either Direction na V/µs Main Terminal MOC30M 5 ma Voltage = 3V (3) MOC30M/ 0 MOC3M MOC303M/ MOC33M 5 I TM = 00 ma peak, All.8 3 V I F = rated I FT All 500 µa Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units V INH Inhibit Voltage (MT-MT I F = Rated I FT MOC30M/M/3M 0 V voltage above which device will not trigger) MOC3M/3M 5 I DRM Leakage in Inhibited State I F = Rated I FT, V DRM = 00V, off state All µa Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units V ISO Isolation Voltage f = 0 Hz, t = sec All 7500 V *Typical values at T A = 5 C Notes:. Test voltage must be applied within dv/dt rating. 3. All devices are guaranteed to trigger at an I F value less than or equal to max I FT. Therefore, recommended operating I F lies between max I FT (5mA for MOC30M, 0mA for MOC30M & MOC3M, 5mA for MOC303M & MOC33M) and absolute max I F (0mA). 4. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
4 Typical Performance Curves V F, FORWARD VOLTAGE (V) I FT, LED TRIGGER CURRENT (NORMALIZED) Figure. LED Forward Voltage vs. Forward Current T A = -40 C T A = 5 C T A = 85 C I F, LED FORWARD CURRENT (ma) Figure 3. LED Current Required to Trigger vs. LED Pulse Width T A = 5 C NORMALIZED TO PW IN >> 00µs 0 00 PW IN, LED TRIGGER PULSE WIDTH (µs) I DRM, LEAKAGE CURRENT (na) I FT, NORMALIZED Figure. Trigger Current Vs. Temperature V TM = 3V NORMALIZED TO T A = 5 C Figure 4. Leakage Current, IDRM vs. Temperature
5 Typical Performance Curves (Continued) I DRM, NORMALIZED I H, HOLDING CURRENT (NORMALIZED) Figure 5. I DRM, Leakage in Inhibit State vs. Temperature I F = RATED I FT NORMALIZED TO T A = 5 C Figure 7. I H, Holding Current vs. Temperature I TM, ON-STATE CURRENT (ma) V INH, NORMALIZED Figure. On-State Characteristics T A = 5 C V TM, ON-STATE VOLTAGE (VOLTS) Figure 8. Inhibit Voltage vs. Temperature.0.5 NORMALIZED TO T A = 5 C
6 . 00x scope probes are used, to allow high speeds and voltages.. The worst-case condition for static dv/dt is established by triggering the D.U.T. with a normal LED input current, then removing the current. The variable vernier resistor combined with various capacitor combinations allows the dv/dt to be gradually increased until the D.U.T. continues to trigger in response to the applied voltage pulse, even after the LED current has been removed. The dv/dt is then decreased until the D.U.T. stops triggering. t RC is measured at this point and recorded. Basic Applications DIFFERENTIAL PREAMP MOUNT DUT ON TEMPERATURE CONTROLLED Cµ PLATE f = 0 Hz PW = 00 µs 50 Ω PULSE GENERATOR Typical circuit for use when hot line switching is required. In this circuit the hot side of the line is switched and the load connected to the cold or neutral side. The load may be connected to either the neutral or hot line. R in is calculated so that I F is equal to the rated I FT of the part, 5mA for the MOC30M, 0mA for the MOC30M, or 5mA for the MOC303M. The 39Ω resistor and 0.0µF capacitor are for snubbing of the triac and is often, but not always, necessary depending upon the particular triac and load used. Suggested method of firing two, back-to-back SCR s with a Fairchild triac driver. Diodes can be N400; resistors, R and R, are optional 330Ω. 0V X00 PROBE X00 PROBE N94 Note: This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only /4W DUT dv dt VERNIER V DRM/V RRM SELECT N97A 8V 0k 00 8 RFP4N pF ALL COMPONENTS ARE NON-INDUCTIVE UNLESS SHOWN V Figure 9. Circuit for Static dv Measurement of Power Thyristors dt V CC V CC R in Rin 3 3 MOC30-M MOC30-M MOC303-M MOC30-M MOC30-M MOC303-M 5 30Ω WATT WIREWOUND V MEG EACH. MEG POWER TEST Figure 0. Hot-Line Switching Application Circuit 5 4 R D 30Ω 0-000V 0mA HOT 4 40 VAC 30Ω SCR R FKPFN0 D 39Ω 0.0µF SCR LOAD 5 VAC NEUTRAL LOAD Figure. Inverse-Parallel SCR Driver Circuit
7 Package Dimensions Through Hole.0.0 Pin 5.08 (Max.) (Min.) (0.8) (Bsc) 5 (Typ.) 7. (Typ.) Surface Mount (Max.) Pin " Lead Spacing Pin 5.08 (Max.) (Min.) (0.8).54 (Bsc) (.78) (.5) (.54) (7.49) (0.54) (0.7) Rcommended Pad Layout (Min.) (0.8).54 (Bsc) (8.3) Note: All dimensions in mm.
8 Ordering Information Option Marking Information Order Entry Identifier (Example) Description No option MOC30M Standard Through Hole Device S MOC30SM Surface Mount Lead Bend SR MOC30SRM Surface Mount; Tape and Reel T MOC30TM 0.4" Lead Spacing V MOC30VM VDE 0884 TV MOC30TVM VDE 0884, 0.4" Lead Spacing SV MOC30SVM VDE 0884, Surface Mount SRV MOC30SRVM VDE 0884, Surface Mount, Tape and Reel Definitions Fairchild logo Device number V MOC30 X YY Q VDE mark (Note: Only appears on parts ordered with VDE 3 option See order entry table) 4 One digit year code, e.g., 3 5 Two digit work week ranging from 0 to 53 Assembly package code *Note Parts that do not have the V option (see definition 3 above) that are marked with date code 35 or earlier are marked in portrait format.
9 Carrier Tape Specification Reflow Profile 4.5 ± ± C ± 0.05 User Direction of Feed 4.0 ± MAX 0. ± ± 0..0 ± C/Sec Ramp up rate 33 Sec Time (s) 0 C Time above 83 C = 90 Sec Ø.5 MIN.75 ± ± ± ± 0.0 Ø.5 ± 0./-0 >45 C = 4 Sec 30
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Sxx40x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes
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Optocoupler, Phototriac Output, VO4157, VO4158 i179030 A C NC 1 2 3 ZCC* 6 5 4 MT2 NC MT1 *Zero crossing circuit FEATURES High static dv/dt 5 kv/µs High input sensitivity I FT = 1.6, 2, and 3 ma 300 ma
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Features: Current transfer ratio (CTR: 50~600% at I F =5mA, V CE =5V) High isolation voltage between input and output (Viso=3750 V rms ) Compact small outline package Pb free and RoHS compliant. UL approved
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DESCRIPTION The device consists of a gallium arsenide infrared emitting diode optically coupled to a high voltage, silicon, phototransistor detector in a standard 6-pin DIP package. It is designed for
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Features: 4N2X series: 4N25, 4N26, 4N27, 4N28 4N3X series: 4N35, 4N36, 4N37, 4N38 H11AX series: H11A1, H11A2, H11A3, H11A4, H11A5 High isolation voltage between input and output (Viso=5000 V rms) Creepage
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TOSHIBA Photocoupler GaAs Ired & Photo Triac TLP6(S),TLP6(S),TLP6(S) TLP6(S),TLP6(S),TLP6(S) Office Machine Household Use Equipment Triac Driver Solid State Relay Unit in mm The TOSHIBA TLP6 (S), TLP6
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Features Dual channel coupler Current transfer ratios offered in narrow ranges ELD205: 40-80% ELD206: 63-125% ELD207: 100-200% ELD211: > 20% ELD213: > 100% ELD217: > 100% High isolation voltage between
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Optocoupler, Phototriac Output, IL40, IL408 i79030 DESCRIPTION The IL40, IL408 consists of a GaAs IRLED optically coupled to a photosensitive zero crossing TRIAC network. The TRIAC consists of two inverse
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IL42, IL428 Optocoupler, Phototriac Output, A 1 6 MT2 FEATURES High input sensitivity I FT = 2 ma C 2 NC 6 V, 8 V blocking voltage 21842-1 NC i1793_2 3 4 V D E MT1 3 ma on-state current High static dv/dt
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