TLP3526 TLP3526. Triac Driver Programmable Controllers AC Output Module Solid State Relay. Pin Configuration (top view)

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1 TLP6 TOSHIBA Photocoupler GaAs Ired & Photo Triac TLP6 Triac Driver Programmable Controllers AC Output Module Solid State Relay Unit in mm The TOSHIBA TLP6 consists of a photo triac optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic DIP. Peak off state voltage: 6V(min.) Trigger LED current: ma(max.) On state current:.arms(max.) Isolation voltage: Vrms(min.) UL recognized: UL77, file no. E6749 TOSHIBA A Weight:. g Pin Configuration (top view) 4 : Anode : Cathode 4,,6,7 : N.C. 9, : Triac T : Triac T : Triac gate

2 TLP6 Maximum Ratings (Ta = C) LED Detector Characteristic Symbol Rating Unit Forward current I F ma Forward current derating (Ta C) I F / C.7 ma / C Peak forward current (µs pulse, pps) I FP A Reverse voltage V R V Junction temperature T j C Offstate output terminal voltage V DRM 6 V Onstate RMS current Ta = 4 C I T(RMS). Ta = 6 C.7 Onstate current derating (Ta 4 C) I T / C 4. ma / C Peak current from snubber circuit (µs pulse, pps) I SP A Peak nonrepetitive surge current (Hz, peak) I STM A Junction temperature T j C Storage temperature range T stg 4~ C Operating temperature range T opr ~8 C Lead soldering temperature ( s) T sol 6 C Isolation voltage (AC, min., R.H. 6%) (Note) BV S V rms (Note ) Device considered a two terminal: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions A Characteristic Symbol Min. Typ. Max. Unit Supply voltage V AC 4 V ac Forward current I F ma Peak current from snubber circuit I SP A Operating temperature T opr 8 C -9-

3 TLP6 Individual Electrical Characteristics (Ta = C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage V F I F = ma... V LED Detector Reverse current I R V R = V µa Capacitance C T V =, f = MHz pf Peak offstate current I DRM V DRM = 6V, Ta = C µa Peak onstate voltage V TM I TM =.A. V Holding current I H R L = Ω ma Critical rate of rise of offstate voltage Critical rate of rise of commutating voltage dv / dt V in = 4V rms (Fig.) V/µs dv / dt(c) V in = 4V rms, I T =.Arms (Fig.) V/µs Coupled Electrical Characteristics (Ta = C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Trigger LED current I FT V T = 6V ma Capacitance (input to output) C S V S =, f = MHz. pf Isolation resistance R S V S = V 4 Ω Isolation voltage BV S AC, minute AC, second, in oil V rms DC, minute, in oil V dc Fig.: dv / dt test circuit V CC + - R in Ω 9 R L ~ V in dv/dt(c) V,V CC dv/dt V -9-

4 TLP6 I F Ta. I T(RMS) Ta Allowable forward current IF (ma) On-state current IT(RMS) (A) Allowable pulse forward current IFP (ma) I FP D R Pulse width µs Ta= Forward current IF (ma).. Ta= I F V F Duty cycle ratio D R Forward voltage V F (V) -. ΔV F / ΔTa I F I FP V FP Forward voltage temperature coefficient ΔVF / ΔTa (mv / ) Pulse forward current IFP (ma).6. Pulse width µs Repetitive frequency = Hz Ta= Forward current I F (ma) Pulse forward voltage V FP (V) 4-9-

5 TLP6 Normalized I FT Ta VT = 6V Normalized I H Ta Trigger LED current IFT.. Holding current IH Peak off-state current IDRM VDRM = Rated Normalized I DRM Ta Off-state output terminal voltage VDRM Normalized V DRM Ta Normalized V IH Ta Inhibit voltage VIH

6 TLP6 RESTRICTIONS ON PRODUCT USE 77EBC TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. The products described in this document are subject to the foreign exchange and foreign trade laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 6-9-

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