Optocoupler, Phototriac Output, Zero Crossing
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- Archibald Matthews
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1 BRT, BRT, BRT3 Optocoupler, Phototriac Output, Zero Crossing DESCRIPTION i79 i793_3 The BRT, BRT, BRT3 product family consists of AC switch optocouplers with zero voltage detectors with two electrically insulated lateral power ICs which integrate a thyrister system, a photo detector and noise suppression at the output and an IR GaAs diode input. High input sensitivity is achieved by using an emitter follower phototransistor and a SCR predriver resulting in an LED trigger current of less than ma or 3 ma (DC). Inverse parallel SCRs provide commutating dv/dt greater than kv/μs. The zero cross line voltage detection circuit consists of two MOSFETS and a photodiode. The BRT, BRT, BRT3 product family isolates lowvoltage logic from, 3, and 38 VAC lines to control resistive, inductive or capacitive loads including motors, solenoids, high current thyristers or TRIAC and relays. A C MT NC NC 3 ZCC* MT *Zero crossing circuit V D E FEATURES High input sensitivity I FT = ma I TRMS = 3 ma High static dv/dt V/μs Electrically insulated between input and output circuit Microcomputer compatible Trigger current (I FT <. ma) BRTF, BRT3F, (I FT < ma) BRTH, BRTH, BRT3H (I FT < 3 ma) BRTM, BRTM, BRT3M Available surface mount and on on tape and reel Zero voltage crossing detector Compliant to RoHS Directive /9/EC and in accordance to WEEE /9/EC APPLICATIONS Industrial controls Office equipment Consumer appliances AGENCY APPROVALS UL file no. E7 system code H DIN EN 77 (VDE 8)/DIN EN 77 (pending) available with option CQC ORDERING INFORMATION DIP Option B R T # x X # # T AGENCY CERTIFIED/PACKAGE PART NUMBER PACKAGE OPTION TAPE AND REEL V DRM (V) 8 UL I FT = ma I FT = 3 ma I FT =. ma I FT = ma I FT = 3 ma I FT =. ma I FT = ma I FT = 3 ma DIP BRTH BRTM BRTF BRTH BRTM BRT3F BRT3H BRT3M DIP, mil, option SMD, option 7 BRTH X7 SMD, option 9 X X7T () BRTH X7T () X9T () BRT3F X BRT3F X7T () BRT3F X9T >.7 mm 7. mm Option 7 BRT3H X BRT3H X7T (). mm Option mm >. mm BRT3M X7T Option 9 Rev..8, Dec Document Number: 839
2 BRT, BRT, BRT3 AGENCY V DRM (V) CERTIFIED/PACKAGE 8 UL, VDE I FT = ma I FT = 3 ma I FT =. ma I FT = ma I FT = 3 ma I FT =. ma I FT = ma I FT = 3 ma DIP DIP, option BRTH X BRTM X SMD, option 7 Note () Also available in tube, do not put T on the end. X X X7T BRTH X BRTH X BRTH X7 BRTM X SMD, option 8 BRT3H X BRTH X BRT3M X BRT3H X8T ABSOLUTE MAXIMUM RATINGS (T amb = C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage I R = μa V R V Forward current I F ma Surge current I FSM. A Power dissipation P diss mw Derate from C.33 mw/ C OUTPUT BRT V DRM V Peak offstate voltage BRT V DRM V BRT3 V DRM 8 V On state RMS current I TRM 3 ma Single cycle surge current 3 A Power dissipation P diss mw Derate from C. mw/ C COUPLER Isolation test voltage (between emitter and detector, climate per DIN, part, Nov. 7) t = s V ISO 3 V RMS Pollution degree (DIN VDE 9) Creepage distance 7 mm Clearance distance 7 mm Comparative tracking index per DIN IEC /VDE 33 part, group IIIa per DIN VDE CTI 7 Isolation resistance V IO = V, T amb = C R IO Ω V IO = V, T amb = C R IO Ω Storage temperature range T stg to + C Ambient temperature range T amb to + C Soldering temperature () max. s dip soldering. mm from case bottom T sld C Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. () Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Rev..8, Dec Document Number: 839
3 BRT, BRT, BRT3 ELECTRICAL CHARACTERISTICS (T amb = C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = ma V F..3 V Reverse current V R = V I R. μa Capacitance f = MHz, V F = V C O pf Thermal resistance, junction to ambient R thja 7 K/W OUTPUT Peak offstate voltage I D(RMS) = μa BRT BRT V DM BRT3 8 Offstate current V D = V DRM, T amb = C, I F = ma I D(RMS) μa Onstate voltage I T = 3 ma V TM.7 3 V Onstate current PF =, V T(RMS) =.7 V I TM 3 ma Surge (nonrepetitive), onstate current f = Hz I TSM 3 A Trigger current temp. gradient ΔI FT /ΔT j 7 μa/k ΔI FT /ΔT j 7 μa/k Inhibit voltage temp. gradient ΔV DINH /ΔT mv/k j Offstate current in inhibit state I F = I FT, V DRM I DINH μa Holding current I H μa Latching current V T =. V I L ma Zero cross inhibit voltage I F = rated I FT V IH V Turnon time V RM = V DM = V D(RMS) t on 3 μs Turnoff time PF =, I T = 3 ma t off μs Critical rate of rise of offstate V D =.7 V DRM, T j = C dv/dt cr V/μs voltage V D =.7 V DRM, T j = 8 C dv/dt cr V/μs Critical rate of rise of voltage at current commutation Critical rate of rise of onstate at current commutation Thermal resistance, junction to ambient V D = 3 V RMS, I D = 3 ma RMS, T j = C V D = 3 V RMS, I D = 3 ma RMS, T j = 8 C V D = 3 V RMS, I D = 3 ma RMS, T j = C dv/dt crq 8 V/μs dv/dt crq 7 V/μs di/dt crq A/ms R thja K/W COUPLER Critical rate of rise of coupled input/output voltage I T = A, V RM = V DM = V D(RMS) dv IO /dt V/μs Common mode coupling capacitance C CM. pf Capacitance (input to output) f = MHz, V IO = V C IO.8 pf Isolation resistance Trigger current V IO = V, T amb = C R is Ω V IO = V, T amb = C R is Ω V D = V, F versions I FT. ma V D = V, H versions I FT ma V D = V, M versions I FT 3 ma Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. V Rev..8, Dec 3 Document Number: 839
4 BRT, BRT, BRT3 SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Climatic classification (according to IEC 8 part ) // Comparative tracking index CTI V IOTM V V IORM 3 V P SO mw I SI ma T SI 7 C Creepage distance standard DIP 7 mm Clearance distance standard DIP 7 mm Creepage distance mil DIP 8 mm Clearance distance mil DIP 8 mm Note As per IEC 77, , this optocoupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. POWER FACTOR CONSIDERATIONS A snubber is not needed to eliminate false operation of the TRIAC driver because of the high static and commutating dv/dt with loads between. and.8 power factors. When inductive loads with power factors less than.8 are being driven, include a RC snubber or a single capacitor directly across the device to damp the peak commutating dv/dt spike. Normally a commutating dv/dt causes a turningoff device to stay on due to the stored energy remaining in the turningoff device. But in the case of a zero voltage crossing optotriac, the commutating dv/dt spikes can inhibit one half of the TRIAC from turning on. If the spike potential exceeds the inhibit voltage of the zero cross detection circuit, half of the TRIAC will be heldoff and not turnon. This holdoff condition can be eliminated by using a snubber or capacitor placed directly across the optotriac as shown in figure. Note that the value of the capacitor increases as a function of the load current. The holdoff condition also can be eliminated by providing a higher level of LED drive current. The higher LED drive provides a larger photocurrent which causes the phototransistor to turnon before the commutating spike has activated the zero cross network. Figure shows the relationship of the LED drive for power factors of less than.. The curve shows that if a device requires. ma for a resistive load, then.8 times.7 ma) that amount would be required to control an inductive load whose power factor is less than.3. C s Shunt Capacitance (µf).. iil_ C s (µf) =.3 (µf)*^. I L (ma). TA = C, PF =.3 IF =. ma 3 3 I L Load Current (ma RMS ) Fig. Shunt Capacitance vs. Load Current Rev..8, Dec Document Number: 839
5 BRT, BRT, BRT3 TYPICAL CHARACTERISTICS (T amb = C, unless otherwise specified) NI Fth Normalized LED Trigger Current I Fth Normalized to I Fth at PF =. T A = C LED LED Power (mw) iil_ PF Power Factor.. iil_ 8 T A Ambient Temperature ( C) Fig. Normalized LED Trigger Current vs. Power Factor Fig. Maximum LED Power Dissipation. 3 V F Forward Voltage (V) T A = C T A = C T A = 8 C I T (ma) T j = C C I T = f(v T ), Parameter: T j.7. iil_3 I F Forward Current (ma) 3 iil_ V T (V) Fig. 3 Forward Voltage vs. Forward Current Fig. Typical Output Characteristics If(pk) Peak LED Current (ma) iil_ Duty Factor t LED Pulse Duration (s) Fig. Peak LED Current vs. Duty Factor, τ τ t DF = τ /t I TRMS (ma) 3 I TRMS = f(v T ), R thja = K/W Device switch soldered in pcb or base plate. 8 iil_7 T A ( C) Fig. 7 Current Reduction Rev..8, Dec Document Number: 839
6 BRT, BRT, BRT3 I TRMS (ma) 3 I TRMS = f(t PIN ), R thjpin =. K/W Thermocouple measurement must be performed potentially separated to A and A. Measuring junction as near as possible at the case iil_8 T PIN ( C) Fig. 8 Current Reduction P tot (W) to Hz Line operation, P tot = f(i TRMS ) 3 iil_ I TRMS (ma) Fig. Power Dissipation Hz to Hz Line Operation 3 t gd = f (I F /I FT C), V D = V f = to Hz, Parameter: T j V T j = C C fgd (µs) T j = C C iil_9 I F /I FT C Fig. 9 Typical Trigger Delay Time V DINH min. (V) 8 V DINH min = f (I F /I FT C), parameter: T j Device zero voltage switch can be triggered only in hatched are below T j curves. iil_ I F /I FT C Fig. Typical Static Inhibit Voltage Limit 3 T j = C C IDINH (µa) 3. µf V~ I DINH = f (I F /I FT C), V D = V, Parameter: T j 8 8 iil_ I F /I FT C Fig. Typical Inhibit Current iil_3 Fig. 3 Apply a Capacitor to the Supply Pins at the LoadSide Rev..8, Dec Document Number: 839
7 BRT, BRT, BRT3 33 Ω µh nf V~ nf V~ 3 3 iil_ Fig. Connect a Series Resistor to the Output and Bridge Both by a Capacitor iil_ Fig. Connect a Choke of Low Winding Cap. in Series, e.g., a Ringcore Choke, with Higher Load Currents TECHNICAL INFORMATION See Application Note for additional information. PACKAGE DIMENSIONS in millimeters 3 pin one ID. ±. ISO method A 9.78 ±. 8. ±. 7. ref. min..7 ±. 3. ±..7 ±.73.3 typ. typ..8 ±..8 typ..8 typ..7 ±. max.. typ. 7 Option Option 7 Option 8 Option 9 7. typ. 7. typ. 7. typ..3 max. 7. typ.. ±. 3. ±.3. min..7 min. 8 min..3 ±.3. min.. ±. 3. ± min.. ±. 3. ±.3. typ..3 max.. max.. min. 8 min. 8 PACKAGE MARKING (example) BRTH V YWW H 8 Note Basic product marking only, refer to option information document number 8373 for option marking Rev..8, Dec 7 Document Number: 839
8 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 7 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8Feb7 Document Number: 9
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