6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT (250/400 VOLT PEAK)

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1 -PIN DIP RANDOM-PHASE PACKAGE SCHEMATIC ANODE MAIN TERM. CATHODE NC* N/C 3 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) DESCRIPTION The MOC30XM and MOC30XM series are optically isolated triac driver devices. These devices contain a GaAs infrared emitting diode and a light activated silicon bilateral switch, which functions like a triac. They are designed for interfacing between electronic controls and power triacs to control resistive and inductive loads for /0 VAC operations. FEATURES Excellent I FT stability IR emitting diode has low degradation High isolation voltage minimum 300 VAC RMS Underwriters Laboratory (UL) recognized File #E90700 Peak blocking voltage 0V-MOC30XM 00V-MOC30XM VDE recognized (File #97) Ordering option V (e.g. MOC303VM) APPLICATIONS Industrial controls Solenoid/valve controls Traffic lights Static AC power switch Vending machines Incandescent lamp dimmers Solid state relay Motor control Lamp ballasts Page of 9

2 -PIN DIP RANDOM-PHASE ABSOLUTE MAXIMUM RATINGS (T A = C unless otherwise noted) Parameters Symbol Device Value Units TOTAL DEVICE Storage Temperature T STG All -0 to +0 C Operating Temperature T OPR All -0 to +8 C Lead Solder Temperature T SOL All 0 for 0 sec C Junction Temperature Range T J All -0 to +00 C Isolation Surge Voltage () (peak AC voltage, 0Hz, sec duration) V ISO All 700 Vac(pk) Total Device Power C 330 mw P D All Derate above C. mw/ C EMITTER Continuous Forward Current I F All 0 ma Reverse Voltage V R All 3 V Total Power Dissipation C Ambient 00 mw P D All Derate above C.33 mw/ C DETECTOR Off-State Output Terminal Voltage V DRM MOC300M/M/M MOC300M/M/M/3M Peak Repetitive Surge Current (PW = ms, 0 pps) I TSM All V Total Power C Ambient 300 mw P D All Derate above C mw/ C Note. Isolation surge voltage, V ISO, is an internal device dielectric breakdown rating. For this test, Pins and are common, and Pins, and are common V Page of 9

3 -PIN DIP RANDOM-PHASE ELECTRICAL CHARACTERISTICS (T A = C Unless otherwise specified) INDIVIDUAL COMPONENT CHARACTERISTICS Parameters Test Conditions Symbol Device Min Typ Max Units EMITTER Input Forward Voltage I F = 0 ma V F All.. V Reverse Leakage Current V R = 3 V, T A = C I R All µa DETECTOR Peak Blocking Current,Either Direction Rated V DRM, I F = 0 (note ) I DRM All 0 00 na Peak On-State Voltage,Either Direction I TM = 00 ma peak, I F = 0 V TM All.8 3 V TRANSFER CHARACTERISTICS (T A = C Unless otherwise specified.) DC Characteristics Test Conditions Symbol Device Min Typ Max Units Note. Test voltage must be applied within dv/dt rating. MOC300M 30 MOC300M MOC30M LED Trigger Current Voltage = 3V (note 3) I FT MOC30M ma 0 MOC30M MOC30M MOC303M Holding Current, Either Direction I H All 00 µa. This is static dv/dt. See Figure for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only. 3. All devices are guaranteed to trigger at an I F value less than or equal to max I FT. Therefore, recommended operating I F lies between max I FT (30 ma for MOC300M, ma for MOC300M and MOC30M, 0 ma for MOC30M and MOC30M, ma for MOC30M and MOC303M) and absolute max I F (0 ma). Page 3 of 9

4 STATIC - dv/dt (V/µs) I DRM, LEAKAGE CURRENT (na) TRIGGER CURRENT - I FT (NORMALIZED) TRIGGER CURRENT - I FT (NORMALIZED) V F - FORWARD VOLTAGE (V) ON-STATE CURRENT - I TM (ma) -PIN DIP RANDOM-PHASE.8 Fig. LED Forward Voltage vs. Forward Current 800 Fig. On-State Characteristics T A = - o C T A = o C T A = 00 o C I F - LED FORWARD CURRENT (ma) ON-STATE VOLTAGE - V TM (V) Fig. 3 Trigger Current vs. Ambient Temperature Fig. LED Current Required to Trigger vs. LED Pulse Width NORMALIZED TO: PW in 00 µs NORMALIZED TO T A = C AMBIENT TEMPERATURE - T A ( o C) Fig. dv/dt vs. Temperature LED TRIGGER WIDTH - PW in (µs) Fig. Leakage Current, I DRM vs. Temperature STATIC dv/dt CIRCUIT IN FIGURE Ambient Temperature - T A ( o C) T A, AMBIENT TEMPERATURE ( o C) Page of 9

5 -PIN DIP RANDOM-PHASE 00V (MOC30X) 0V (MOC30X) Vdc R TEST R = 0 kω. The mercury wetted relay provides a high speed repeated pulse to the D.U.T.. 00x scope probes are used, to allow high speeds and voltages. PULSE INPUT MERCURY WETTED RELAY C TEST D.U.T. X00 SCOPE PROBE 3. The worst-case condition for static dv/dt is established by triggering the D.U.T. with a normal LED input current, then removing the current. The variable R TEST allows the dv/dt to be gradually increased until the D.U.T. continues to trigger in response to the applied voltage pulse, even after the LED current has been removed. The dv/dt is then decreased until the D.U.T. stops triggering. τ RC is measured at this point and recorded. APPLIED VOLTAGE WAVEFORM 0 VOLTS V (MOC30X) 8 V (MOC30X) Figure. Static dv/dt Test Circuit Note: This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only. Vmax = 00 V (MOC30X) = 0 V (MOC30X) dv/dt = 0.3 Vmax τ = RC τ (MOC30X) RC τ RC 8 = τ (MOC30X) RC R L V CC R in 3 MOC300M MOC30M MOC30M 80 0 V 0 Hz Figure. Resistive Load Z L V CC R in 3 MOC300M MOC30M MOC30M µf C.k 0 V 0 Hz Figure 7. Inductive Load with Sensitive Gate Triac (I GT ma) Page of 9

6 -PIN DIP RANDOM-PHASE Z L R in V CC 3 MOC300M MOC30M MOC30M µf C. k 0 V 0 Hz Figure 8. Inductive Load with Sensitive Gate Triac (I GT ma) V CC R in 3 MOC300M MOC30M MOC30M MOC303M µf µf 0 VAC HOT LOAD GROUND In this circuit the hot side of the line is switched and the load connected to the cold or ground side. The 39 ohm resistor and 0.0µF capacitor are for snubbing of the triac, and the 70 ohm resistor and 0.0 µf capacitor are for snubbing the coupler. These components may or may not be necessary depending upon the particular and load used. Figure 9. Typical Application Circuit Page of 9

7 -PIN DIP RANDOM-PHASE Package Dimensions (Through Hole) Package Dimensions (Surface Mount) 0.30 (8.89) 0.30 (8.89) 0.0 (.0) 0.0 (.0) 0.0 (.0) 0.0 (.0) (9.90) 0.33 (8.3) (.77) 0.00 (.0) 0.0 (0.3) 0.00 (0.) (.77) 0.00 (.0) 0.0 (0.3) 0.00 (0.) 0.00 (.08) 0. (.93) 0.00 (.08) 0. (.93) 0.0 (0.30) (0.0) 0.00 (.) 0.0 (0.38) 0.00 (0.0) 0.0 (0.) 0.00 (.) 0.0 (0.30) 0.0 (0.3) 0.00 (0.) 0.00 (0.0) 0.0 (0.) 0.00 [.] 0.03 (0.88) 0.00 (0.) Package Dimensions (0. Lead Spacing) 0.30 (8.89) Recommended Pad Layout for Surface Mount Leadform 0.0 (.0) 0.0 (.0) (.78) 0.00 (.) (.77) 0.00 (.0) 0.0 (0.3) 0.00 (0.) 0. (0.79) 0.00 (.) 0.00 (.08) 0. (.93) 0.30 (7.7) (0.7) 0.00 (.) 0.0 (0.38) 0.00 (0.0) 0.0 (0.) 0.00 [.] 0.0 (0.30) (0.) 0. (0.80) 0.00 (0.) NOTE All dimensions are in inches (millimeters) Page 7 of 9

8 -PIN DIP RANDOM-PHASE ORDERING INFORMATION Option Order Entry Identifier Description S S Surface Mount Lead Bend SR SR Surface Mount; Tape and reel T T 0." Lead Spacing V V VDE 088 TV TV VDE 088, 0." Lead Spacing SV SV VDE 088, Surface Mount SRV SRV VDE 088, Surface Mount, Tape & Reel Carrier Tape Specifications. ± ± ± 0..0 ± 0..0 ± 0.0 Ø. MIN.7 ± ± 0.. ±.0.0 ± ± MAX 0. ± 0.0 Ø. ± 0./-0 User Direction of Feed NOTE All dimensions are in inches (millimeters) Page 8 of 9

9 -PIN DIP RANDOM-PHASE DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 9 of 9

MOC3031M MOC3032M MOC3033M MOC3041M MOC3042M MOC3043M. Parameters Symbol Device Value Units TOTAL DEVICE Storage Temperature. T STG All -40 to +150 C

MOC3031M MOC3032M MOC3033M MOC3041M MOC3042M MOC3043M. Parameters Symbol Device Value Units TOTAL DEVICE Storage Temperature. T STG All -40 to +150 C -PIN DIP ZERO-CROSS DESCRIPTION The MOC303XM and MOC304XM devices consist of a AlGaAs infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a zero voltage