QT-Brightek Optocoupler Series
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1 QT-Brightek Optocoupler Series 4-PIN Long Mini-Flat Phototransistor Optocoupler Part No.: QT101X-W Product: QT101X-W Date: September 13, 2018 Page 1 of 13
2 Table of Contents: Introduction... 3 Absolute Maximum Rating... 4 Electrical Characteristic (T A =25 o C)... 5 Characteristic Curves... 7 Solder Profile & Footprint... 9 Packing & Labeling Device Marking Ordering Information Revision History Disclaimer Product: QT101X-W Date: September 13, 2018 Page 2 of 13
3 Introduction Feature: Certification & Compliance: High Isolation voltage between input and output Pb free and RoHS Compliant (Viso = 5000V rms) UL recognized (File #E338132) Extra low coupling capactance cul recognized (File #E338132) Creepage distance > 8mm VDE (Pending Approval) Operating Temperature up to 125 ºC Long Mini-Flat package. -W: White housing package Schematic: Dimension: (Dot location indicates pin 1) - All Dimensions are in mm Product: QT101X-W Date: September 13, 2018 Page 3 of 13
4 Absolute Maximum Rating Symbol Parameter Rating Units V ISO Isolation Voltage 5000 V RMS T STG Storage Temperature -55 ~ +150 ºC T OPR Operating Temperature -55 ~ +125 ºC T SOL Lead Solder Temperature 260 for 10 sec ºC EMITTER I F Continuous Forward Current 50 ma IFP Peak Forward Current ( 1us, 300pps) 1 A V R Reverse Voltage 6 V P D Power Dissipation 85 mw Power Dissipation Derated above 100ºC - mw/ºc DETECTOR BVCEO Collector-Emitter Breakdown Voltage 80 V BVECO Emitter-Collector Breakdown Voltage 7 V IC Collector current 50 ma P C Power Dissipation 150 mw Product: QT101X-W Date: September 13, 2018 Page 4 of 13
5 Electrical Characteristic (T A =25 o C) Emitter Symbol Characteristics Device Test Range Condition Min Typ Max Unit I F = 10mA V V F Forward Voltage I F = 50mA I R Reverse Current V R = 6V µa C IN Input Capacitance f =1kHz pf Detector Symbol Characteristic Device Test Condition BVCEO Collector-Emitter Breakdown Voltage Range Min Typ Max - IC=0.1mA V Unit BVECO Emitter-Collector Breakdown Voltage - IC=0.1mA µa ICEO Collector-Emitter Dark Current - V CE =20V, I F =0mA na Product: QT101X-W Date: September 13, 2018 Page 5 of 13
6 Transfer Characteristics (T A =0 to 70C unless specified otherwise) Symbol Characteristic Device Test Condition Range Min Typ Max Unit QT1012-W QT1013-W IF = 1mA, VCE=5V QT1014-W QT1011-W QT1012-W IF = 10mA, VCE=5V QT1013-W Current Transfer CTR QT1014-W % Ratio QT1010-W QT1015-W QT1016-W IF = 5mA, VCE=5V QT1017-W QT1018-W QT1019-W V CE(SAT) Collector-Emitter Saturation Voltage IF = 10mA, IC=1mA V R IO Isolation Resistance V IO =500V DC 5x Ω C IO Isolation Capacitance f=1mhz pf Switching Characteristics (T A =25 C, V cc =5V) Symbol Characteristic Device Test Condition Range Min Typ Max T ON Turn On Time T OFF Turn Off Time I C =5mA, V CE =5V, t r Rise Time RL=100Ω t f Fall Time Unit µs Product: QT101X-W Date: September 13, 2018 Page 6 of 13
7 Characteristic Curves Product: QT101X-W Date: September 13, 2018 Page 7 of 13
8 Product: QT101X-W Date: September 13, 2018 Page 8 of 13
9 Solder Profile & Footprint Product: QT101X-W Date: September 13, 2018 Page 9 of 13
10 Recommended Solder Footprint for SMD Leadform Units: mm tolerance: +/- 0.1mm Product: QT101X-W Date: September 13, 2018 Page 10 of 13
11 Packing & Labeling Tape Dimension: Product: QT101X-W Date: September 13, 2018 Page 11 of 13
12 Device Marking QT = QT-Brightek Corporation 1019 = part number Y = Year WW = Week V = VDE Option K= Manufacturing code Ordering Information QT101XVY-W X = Part number (X=0,1,2,3,4,5,6,7,8,9) V = VDE option (V or None) Y = Tape and reel option (T1 or T2) Option Description Quantity T1 Surface Mount Lead Forming with Option 1 Taping 3000 pcs/ reel T2 Surface Mount Lead Forming with Option 2 Taping 3000 pcs/ reel Product: QT101X-W Date: September 13, 2018 Page 12 of 13
13 Revision History Description: Revision # Revision Date Initial release of QT101X-W /12/2018 Amend order information /09/2018 Update info on the ordering info / fix typos /13/2018 Disclaimer QT-BRIGHTEK reserves the right to make changes without further notice to any products herein to improve reliability, function or design. QT-BRIGHTEK does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. Life Support Policy QT-BRIGHTEK s products are not authorized for use as critical components in life support devices or systems without the express written approval of QT-BRIGHTEK. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Product: QT101X-W Date: September 13, 2018 Page 13 of 13
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DESCRIPTION The is an optically coupled isolator consisting of an infrared light emitting diodeand a high voltage NPN silicon photo darlington which has an integral baseemitter resistor to optimise switching
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More informationAD4C742-HSTR. Description. Features. Agency Approvals. Applications. Absolute Maximum Ratings. Schematic Diagram. Ordering Information.
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