Optocoupler, Phototransistor Output, Single/Quad Channel, Half Pitch Mini-Flat Package

Transcription

1 TCMT Series, TCMT4 Series Optocoupler, Phototransistor Output, Single/Quad Channel, Half Pitch Mini-Flat Package FEATURES Low profile package (half pitch) AC isolation test voltage 375 V RMS Low coupling capacitance of typical.3 pf Current transfer ratio (CTR) selected into groups Low temperature coefficient of CTR C E 9 Wide ambient temperature range Compliant to RoHS Directive 22/95/EC and in accordance to WEEE 22/96/EC 2 8 A C 4PIN 6 PIN DESCRIPTION The TCMT series consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin (single channel) up to 6 pin (quad channel) package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. APPLICATIONS Programmable logic controllers Modems Answering machines General applications AGENCY APPROVALS UL577, file no. E76222 system code M, double protection cul CSA 22.2 bulletin 5A, double protection DIN EN (VDE 884)/DIN EN (pending) FIMKO ORDERING INFORMATION T C M T # # PART NUMBER SOP-# 7 mm AGENCY CTR (%) CERTIFIED/PACKAGE 5 ma ma 5 ma UL, cul, FIMKO 5 to 6 4 to 8 63 to 25 to 2 6 to 32 5 to 5 to 3 8 to 6 3 to 26 2 to 4 SOP-4, single channel TCMT TCMT TCMT2 TCMT3 TCMT4 TCMT5 TCMT6 TCMT7 TCMT8 TCMT9 SOP-6, quad channel TCMT4T () TCMT Notes Available only on tape and reel. () Product is rotated 8 in tape and reel cavity. Rev. 2.6, -Oct- Document Number: 835 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 TCMT Series, TCMT4 Series ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Forward current 6 ma Forward surge current t p μs SM.5 A Power dissipation P diss mw Junction temperature T j 25 C OUTPUT Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t p /T =.5, t p ms I CM ma Power dissipation P diss 5 mw Junction temperature T j 25 C COUPLER AC isolation test voltage (RMS) Related to standard climate 23/5 DIN 54 V ISO 375 V RMS Total power dissipation P tot 25 mw Operating ambient temperature range T amb - 4 to + C Storage temperature range T stg - 4 to + 25 C Soldering temperature () T sld 26 C Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. () Wave soldering three cycles are allowed. Also refer to Assembly Instructions ( ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage = 5 ma V F.25.6 V Junction capacitance V R =, f = MHz C j 5 pf OUTPUT Collector emitter voltage I C = μa V CEO 7 V Emitter collector voltage I E = μa V ECO 7 V Collector dark current V CE = 2 V, = A I CEO na COUPLER Collector emitter saturation voltage = ma, I C = ma V CEsat.3 V Cut-off frequency V CE, = ma, R L = Ω f c khz Coupling capacitance f = MHz C k.3 pf Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 2.6, -Oct- 2 Document Number: 835 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 TCMT Series, TCMT4 Series CURRENT TRANSFER RATIO (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT V CE, = 5 ma TCMT CTR 5 6 % TCMT CTR 4 8 % V CE, = ma TCMT2 CTR % TCMT3 CTR 2 % TCMT4 CTR 6 32 % I C / TCMT5 CTR 5 5 % TCMT6 CTR 3 % TCMT7 CTR 8 6 % V CE, = 5 ma TCMT8 CTR 3 26 % TCMT9 CTR 2 4 % TCMT4 CTR 5 6 % TCMT46 CTR 3 % SWITCHING CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time V S, I C = 2 ma, R L = Ω, V S, I C = 2 ma, R L = Ω, V S, I C = 2 ma, R L = Ω, V S, I C = 2 ma, R L = Ω, V S, I C = 2 ma, R L = Ω, V S, I C = 2 ma, R L = Ω, V S, = ma, R L = kω, (see figure 2) V S, = ma, R L = kω, (see figure 2) t d 3 μs t r 3 μs t f 4.7 μs t s.3 μs 6 μs t off 5 μs 9 μs t off 8 μs + 5 V IC = 2 ma; adjusted through input amplitude = ma + 5 V I C R G = 5 Ω t p T =. t p = 5 µs 5 Ω Ω Channel I Channel II Oscilloscope R L = MΩ C L = 2 pf R G t p = 5 Ω T =. t p = 5 µs 5 Ω kω Channel I Channel II Oscilloscope R L MΩ 2 pf C L Fig. - Test Circuit, Non-Saturated Operation Fig. 2 - Test Circuit, Saturated Operation Rev. 2.6, -Oct- 3 Document Number: 835 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 TCMT Series, TCMT4 Series I C % 9 % t p t % t p t d t r (= t d + t r ) t r t d t s t off Pulse duration t s Delay time t f Rise time t off (= t s + t f ) Turn-on time Fig. 3 - Switching Times t f t Storage time Fall time Turn-off time SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Climatic classification IEC 68 part 4//2 Comparative tracking index CTI V IOTM 6 V V IORM 77 V P SO 265 mw I SI 3 ma T SI 5 C Creepage distance 5 mm Clearance distance 5 mm Insulation thickness, reinforced rated per IEC mm Note As per IEC , , this optocoupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. TYPICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) P tot - Total Power Dissipation (mw) 3 Coupled device 25 2 Phototransistor 5 IR-diode T amb - Ambient Temperature ( C). Fig. 4 - Total Power Dissipation vs. Ambient Temperature Fig. 5 - Forward Current vs. Forward Voltage - Forward Current (ma) V F - Forward Voltage (V) Rev. 2.6, -Oct- 4 Document Number: 835 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 TCMT Series, TCMT4 Series CTR rel - Relative Current Transfer Ratio V CE = 5 ma T amb - Ambient Temperature ( C) Fig. 6 - Relative Current Transfer Ratio vs. Ambient Temperature 75 I C - Collector Current (ma) = 5 ma 2 ma ma 5 ma 2 ma ma V CE - Collector Emitter Voltage (V) Fig. 9 - Collector Current vs. Collector Emitter Voltage I CEO - Collector Dark Current, with Open Base (na) V CE = 2 V = T amb - Ambient Temperature ( C) Fig. 7 - Collector Dark Current vs. Ambient Temperature V CEsat - Collector Emitter Saturation Voltage (V) CTR = 5 % used 2 % used.2 % used I C - Collector Current (ma) Fig. - Collector Emitter Saturation Voltage vs. Collector Current I C - Collector Current (ma). V CE Forward Current (ma) CTR - Current Transfer Ratio (%) V CE Forward Current (ma) Fig. 8 - Collector Current vs. Forward Current Fig. - Current Transfer Ratio vs. Forward Current Rev. 2.6, -Oct- 5 Document Number: 835 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 TCMT Series, TCMT4 Series /t off - Turn-on/Turn-off Time (µs) Saturated operation V S R L = kω t off Forward Current (ma) 95 3 I C - Collector Current (ma) /t off - Turn-on /Turn-off Time (µs) t off Non-saturated operation V S R L = Ω 8 Fig. 2 - Turm-on/off Time vs. Forward Current Fig. 3 - Turn-on/off Time vs. Collector Current PACKAGE DIMENSIONS in millimeters 2.8 max max ±. 4.4 ±.2.45 ±..27 nom Possible footprint Pin no. identification technical drawings according to DIN specifications 6283 Rev. 2.6, -Oct- 6 Document Number: 835 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 TCMT Series, TCMT4 Series.4 max ±.2.9. ±..45 ±..27 nom x.27 = max. Possible footprint Pin no. identification Drawing-No.: Issue: ; technical drawings according to DIN specifications PACKAGE MARKING (example) MT TCMT V YWW M 68 V YWW M Rev. 2.6, -Oct- 7 Document Number: 835 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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