Optocoupler, Phototransistor Output, with Base Connection

Transcription

1 Vishay Semiconductors Optocoupler, Phototransistor Output, FEATURES Isolation test voltage 5 V RMS A 6 B Long term stability Industry standard dual-in-line package C 5 C Compliant to RoHS directive /95/EC and in accordance to WEEE /96/EC NC i79- V D E E AGENCY APPROVALS Underwriters lab file no. E57 8 DIN EN (VDE 88 BSI IEC 695 IEC 665 FIMKO DESCRIPTION The CNY7 is an optically coupled pair consisting of a gallium arsenide infrared emitting diode optically coupled to a silicon NPN phototransitor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The CNY7 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation. ORDER INFORMATION PART CNY7-. CNY7-. CNY7-. CNY7-. REMARKS CTR % to 8 %, DIP-6 CTR 6 % to 5 %, DIP-6 CTR % to %, DIP-6 CTR 6 % to %, DIP-6 ABSOLUTE MAXIMUM RATINGS ( PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 5 V Forward current 6 ma Surge current t µs SM A Power dissipation P diss mw OUTPUT Collector emitter breakdown voltage BV CEO 7 V Emitter base breakdown voltage BV EBO 7 V Collector current 5 ma t < ms ma Power dissipation P diss 5 mw For technical questions, contact: optocoupleranswers@vishay.com Document Number: 886 Rev.., 6-Oct-9

2 Optocoupler, Phototransistor Output, Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS ( PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Isolation test voltage between emitter and detector referred to climate t = s V ISO 5 V RMS DIN 5, part, Nov. 7 Creepage distance 7 mm Clearance distance 7 mm Isolation thickness between emitter and detector. mm Comparative tracking index per DIN IEC /VDE, part 75 Isolation resistance V IO = 5 V, T amb = 5 C R IO Ω V IO = 5 V, T amb = C R IO Ω Storage temperature T stg - 55 to + 5 C Operating temperature T amb - 55 to + C Soldering temperature ( max. s, dip soldering: distance to seating plane.5 mm T sld 6 C Notes ( T amb = 5 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ( Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTCS ( PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage = 6 ma V F.5.65 V Breakdown voltage I R = ma V BR 6 V Reverse current V R = 6 V I R. µa Capacitance V R = V, f = MHz C O 5 pf Thermal resistance R th 75 K/W OUTPUT Collector emitter capacitance V CE = 5 V, f = MHz C CE 5. pf Collector base capacitance V CB = 5 V, f = MHz C CB 6.5 pf Emitter base capacitance V EB = 5 V, f = MHz C EB 7.5 pf Thermal resistance R th 5 K/W COUPLER Collector emitter, saturation voltage V F = ma, =.5 ma V CEsat.5. V Coupling capacitance C C.6 pf Collector emitter, leakage current V CE = V CNY7- EO 5 na CNY7- EO 5 na CNY7- EO 5 na CNY7- EO 5 na Note ( T amb = 5 C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. Document Number: 886 For technical questions, contact: optocoupleranswers@vishay.com Rev.., 6-Oct-9

3 Vishay Semiconductors Optocoupler, Phototransistor Output, CURRENT TRANSFER RATIO ( PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT / V CE = 5 V, = ma V CE = 5 V, = ma Note ( Current transfer ratio and collector-emitter leakage current by dash number (T amb C. CNY7- CTR 8 % CNY7- CTR 6 5 % CNY7- CTR % CNY7- CTR 6 % CNY7- CTR % CNY7- CTR 5 % CNY7- CTR 7 % CNY7- CTR 56 9 % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT LINEAR OPERATION (WITHOUT SATURATION Turn-on time = ma, V CC = 5 V, R L = 75 Ω t on µs Rise time = ma, V CC = 5 V, R L = 75 Ω t r µs Turn-off time = ma, V CC = 5 V, R L = 75 Ω t off. µs Fall time = ma, V CC = 5 V, R L = 75 Ω t f µs Cut-off frequency = ma, V CC = 5 V, R L = 75 Ω f CO 5 khz SWITCHING OPERATION (WITH SATURATION = ma CNY7- t on µs Turn-on time = ma CNY7- t on. µs CNY7- t on. µs = 5 ma CNY7- t on 6 µs = ma CNY7- t r µs Rise time = ma CNY7- t r µs CNY7- t r µs = 5 ma CNY7- t r.6 µs = ma CNY7- t off 8 µs Turn-off time = ma CNY7- t off µs CNY7- t off µs = 5 ma CNY7- t off 5 µs = ma CNY7- t f µs Fall time = ma CNY7- t f µs CNY7- t f µs = 5 ma CNY7- t f 5 µs For technical questions, contact: optocoupleranswers@vishay.com Document Number: 886 Rev.., 6-Oct-9

4 Optocoupler, Phototransistor Output, Vishay Semiconductors TYPICAL CHARACTERISTICS T amb = 5 C, unless otherwise specified R L = 75 Ω = C, V CE / = f ( V CC = 5 V (% 7 Ω icny7_ Fig. - Linear Operation (without Saturation icny7_. (ma Fig. - Current Transfer Ratio vs. Diode Current kω V CC = 5 V (% = 5 C, V CE / = f ( 7 Ω icny7_ Fig. - Switching Operation (with Saturation icny7_5. (ma Fig. 5 - Current Transfer Ratio vs. Diode Current = - 5 C, V CE / = f ( = 5 C, V CE / = f ( (% (% icny7_. (ma Fig. - Current Transfer Ratio vs. Diode Current icny7_6. (ma Fig. 6 - Current Transfer Ratio vs. Diode Current Document Number: 886 For technical questions, contact: optocoupleranswers@vishay.com Rev.., 6-Oct-9

5 Vishay Semiconductors Optocoupler, Phototransistor Output, (% = 75 C, V CE / = f ( = f (V CE = ma = ma = ma = 7 ma = 5 ma icny7_7. (ma Fig. 7 - Current Transfer Ratio vs. Diode Current = ma = ma 5 5 icny7_ V CE (V Fig. - Output Characteristics (% ( = ma, V CE / = f (T V F (V... V F = f ( 5 C 5 C 75 C icny7_ T A ( C Fig. 8 - Current Transfer Ratio (CTR vs. Temperature.9. (ma icny7_ Fig. - Forward Voltage (ma icny7_9 = f (V CE = 5 5 V CE (V Fig. 9 - Transistor Characteristics = µa = µa = 5 µa = µa = 5 µa = µa EO (µa.. EO = f (V,T ( = V CE = 5 V V CE = V C TA icny7_ Fig. - Collector Emitter Off-state Current For technical questions, contact: optocoupleranswers@vishay.com Document Number: Rev.., 6-Oct-9

6 Optocoupler, Phototransistor Output, Vishay Semiconductors V CE sat..9 V CEsat = f (.8.7 = x icny7_ (ma Fig. - Saturation Voltage vs. Collector Current and Modulation Depth CNY7- V CE sat (V..9.8 V CEsat = f (.7.6 = = x = x icny7_6 (ma Fig. 6 - Saturation Voltage vs. Collector Current and Modulation Depth CNY7- V CE sat (V..9 V CEsat = f ( = x.. = x.. icny7_ (ma Fig. - Saturation Voltage vs. Collector Current and Modulation Depth CNY7- P tot (mw 5 5 icny7_8 P tot = f Transistor Diode T A ( C Fig. 7 - Permissible Power Dissipation for Transistor and Diode V CE sat (V..9 V CEsat = f (.8.7 = = x.. I F = x icny7_5 (ma Fig. 5 - Saturation Voltage vs. Collector Current and Modulation Depth CNY7- Document Number: 886 For technical questions, contact: optocoupleranswers@vishay.com Rev.., 6-Oct-9 6

7 Vishay Semiconductors Optocoupler, Phototransistor Output, PACKAGE DIMENSIONS in millimeters DIP-6 7. ±. 7.6 typ. 6.5 ±..5 ±..5 ±..5 ±.. ±..8 ± ± to 9.5 typ. 77_ DIP-6, mil 7. ±. 7.6 typ. 6.5 ±..5 ±..5 ±..5 ± ±..8 ± (typ..5 ±. 77_ PACKAGE MARKING CNY7- V YWW For technical questions, contact: optocoupleranswers@vishay.com Document Number: Rev.., 6-Oct-9

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