NPN SILICON HIGH FREQUENCY TRANSISTOR 2.0 ± ± 0.1
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1 FEATURES SMALL PACKAGE STYLE: NE686 Die in a mm x 1.5 mm package LOW NOISE FIGURE: NF = 1.5 db TYP at GHz HIGH GAIN: S1E = 9 db TYP at GHz HIGH GAIN BANDWIDTH: ft = 13 GHz LOW CURRENT OPERATION DESCRIPTION The UPA87T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high ft, low voltage bias and small size make this device suited for various hand-held wireless applications. ELECTRICAL CHARACTERISTICS (TA = 5 C) NPN SILICON HIGH FREQUENCY TRANSISTOR PART NUMBER PACKAGE OUTLINE SILICON TRANSISTOR OUTLINE DIMENSIONS (Units in mm). ±..9 ±.1 PIN OUT 1. Collector Transistor 1. Emitter Transistor 1 3. Collector Transistor 4. Emitter Transistor 5. Base Transistor 6. Base Transistor 1 UPA87T PACKAGE OUTLINE S6 (Top View) UPA87T S6 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5 V, IE = μa. 1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = μa. 1 hfe 1 Forward Current Gain at VCE = V, IC = 7 ma ft Gain Bandwidth at VCE = V, IC = 7 ma, f = GHz GHz 1 13 Cre Feedback Capacitance at VCB = V, IE =, f = 1 MHz pf.4. 6 S1E Insertion Power Gain at VCE = V, IC =7 ma, f = GHz db NF Noise Figure at VCE = V, IC = 3 ma, f = GHz db 1.5 hfe1/hfe hfe Ratio: hfe1 = Smaller Value of Q1, or Q.85 hfe = Larger Value of Q1 or Q.1 ± ±.1 Pin 3 is identified with a circle on the bottom of the package. Notes: 1. Pulsed measurement, pulse width 35 μs, duty cycle %.. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA87T-T1, 3K per reel ~ (All Leads)
2 UPA87T ABSOLUTE MAXIMUM RATINGS 1 (TA = 5 C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 5 VCEO Collector to Emitter Voltage V 3 VEBO Emitter to Base Voltage V IC Collector Current ma 1 PT TYPICAL PERFORMANCE CURVES (TA = 5 C) Total Power Dissipation, PT (mw) Total Power Dissipation 1 Die mw 3 Die mw 6 TJ Junction Temperature C 15 TSTG Storage Temperature C -65 to Operation in excess of any one of these parameters may result in permanent damage. 5 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Elements in Total Per Element 6 mw 3 mw Ambient Temperature, TA ( C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE µa 18 µa 16 µa 14 µa 1 µa 1 µa 8 µa 6 µa 4 µa lb = µa DC Current Gain,hFE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = V.5 1. Base to Emitter Voltage, VBE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 1 V VCE = V Collector to Emitter Voltage, VCE (V)
3 UPA87T TYPICAL PERFORMANCE CURVES (TA = 5 C) Gain Bandwidth Product, ft (GHz) Noise Figure, NF (db) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT f = GHz f = GHz VCE = V VCE = 1 V NOISE FIGURE vs. COLLECTOR CURRENT VCE = 1 V ORDERING INFORMATION VCE = V PART NUMBER QUANTITY PACKAGING UPA87T-T1-A 3 Tape & Reel Insertion Power Gain, S1E (db) Feedback Capacitance, CRE (pf) INSERTION POWER GAIN vs. COLLECTOR CURRENT VCE = V VCE = 1 V FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1 MHz Collector to Base Voltage, VCB (V)
4 UPA87T TYPICAL SCATTERING PARAMETERS (TA = 5 C) j1 -j1 j5 -j5 UPA87T (Q1) VCE = 1 V, IC = 1 ma j j5 j1 -j1 VCE = 1 V, IC = 1 ma FREQUENCY S11 S1 S1 S K MAG S1 S1 Maximum Available Gain (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1 - S, = S11 S - S1 S1 S1 S1 S
5 UPA87T TYPICAL SCATTERING PARAMETERS (TA = 5 C) j1 -j1 j5 -j5 UPA87T (Q) VCE = 1 V, IC = 1 ma j j5 j1 -j1 VCE = 1 V, IC = 1 ma FREQUENCY S11 S1 S1 S K MAG S1 S1 Maximum Available Gain (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1 - S, = S11 S - S1 S1 S1 S1 S
6 UPA87T TYPICAL SCATTERING PARAMETERS (TA = 5 C) j1 -j1 j5 -j5 UPA87T (Q1) VCE = 1 V, IC = 5 ma j j5 j1 -j1 VCE = 1 V, IC = 5 ma FREQUENCY S11 S1 S1 S K MAG S1 S1 Maximum Available Gain (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1 - S, = S11 S - S1 S1 S1 S1 S
7 UPA87T TYPICAL SCATTERING PARAMETERS (TA = 5 C) j1 -j1 j5 -j5 UPA87T (Q) VCE = 1 V, IC = 5 ma j j5 j1 -j1 VCE = 1 V, IC = 5 ma FREQUENCY S11 S1 S1 S K MAG S1 S1 Maximum Available Gain (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1 - S, = S11 S - S1 S1 S1 S1 S
8 UPA87T TYPICAL SCATTERING PARAMETERS (TA = 5 C) j1 -j1 j5 -j5 UPA87T (Q1) VCE = V, IC = 1 ma j j5 j1 -j1 VCE = V, IC = 1 ma FREQUENCY S11 S1 S1 S K MAG S1 S1 Maximum Available Gain (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1 - S, = S11 S - S1 S1 S1 S1 S
9 UPA87T TYPICAL SCATTERING PARAMETERS (TA = 5 C) j1 -j1 j5 -j5 UPA87T (Q) VCE = V, IC = 1 ma j j5 j1 -j1 VCE = V, IC = 1 ma FREQUENCY S11 S1 S1 S K MAG S1 S1 Maximum Available Gain (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1 - S, = S11 S - S1 S1 S1 S1 S
10 UPA87T TYPICAL SCATTERING PARAMETERS (TA = 5 C) j1 -j1 j5 -j5 UPA87T (Q1) VCE = V, IC = 7 ma j j5 j1 -j1 VCE = V, IC = 7 ma FREQUENCY S11 S1 S1 S K MAG S1 S1 Maximum Available Gain (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1 - S, = S11 S - S1 S1 S1 S1 S
11 UPA87T TYPICAL SCATTERING PARAMETERS (TA = 5 C) j1 -j1 j5 -j5 UPA87T (Q) VCE = V, IC = 7 ma j j5 j1 -j1 VCE = V, IC = 7 ma FREQUENCY S11 S1 S1 S K MAG S1 (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1 1 + Δ - S11 - S, Δ = S11 S - S1 S1 S1 S1 S1 S1 Maximum Available Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 459 Patrick Henry Drive Santa Clara, CA (48) Telex FAX (48) Hour Fax-On-Demand: (U.S. and Canada only) Internet: DATA SUBJECT TO CHANGE WITHOUT NOTICE PRINTED IN USA ON RECYCLED PAPER -1/
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DATA SHEET NE664M04 / 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
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500 MHz AM/ASK RECEIVER IC UPC8116GR
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techniques, and gold metalization in the fabrication of this device.
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42 Features High Output Power: 21. dbm Typical P 1 db at 2. GHz 2.5 dbm Typical P 1 db at 4. GHz High Gain at 1 db Compression:
Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Description. Features. 85 Plastic Package
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Surface Mount Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41411
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HIGH ISOLATION VOLTAGE HIGH SPEED PHOTOCOUPLER
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CYStech Electronics Corp.
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50 db AGC AMP + VIDEO AMP UPC3206GR
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PRELIMINARY DATA SHEET IQ DEMODULATOR FOR DIGITAL VIDEO/DATA RECEIVER. Vcc (I) GND (I) VAGC GND (RF) RF IN RF IN GND (RF) Vcc (RF) GND (Q) Vcc (Q)
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2SA2016 / 2SC5569 2SA2016 / 2SC5569. Applications. Features. Specifications ( ) : 2SA2016. SANYO Electric Co.,Ltd. Semiconductor Company
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DATA SHEET NPN SILICON POWER TRANSISTOR. 55 to +150 C 150 C Maximum
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