NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mw) 3-PIN POWER MINIMOLD (34 PACKAGE)

Transcription

1 NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (8 mw) 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (8 mw) AMPLIFICATION PO = 29 dbm VCE = 3.6 V, Pin = dbm, PO = 29 dbm VCE = 3.6 V, Pin = dbm, f = 9 MHz MAXIMUM STABLE GAIN: MSG = 23 db VCE = 3.6 V, IC = ma, SiGe TECHNOLOGY: UHS2-HV process ABSOLUTE MAXIMUM RATINGS: VCBO = V 3-PIN POWER MINIMOLD (34 PACKAGE) ORDERING INFORMATION PART NUMBER ORDER NUMBER PACKAGE QUANTITY SUPPLYING FORM -AZ -AZ 3-pin power minimold pcs (Non reel) 12 mm wide embossed taping -T1-AZ -T1-AZ (Pb-Free) Note1 1 kpcs/reel Pin 2 (Emitter) face the perforation side of the tape Note 1. Contains lead in the part except the electrode terminals. Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is pcs. ABSOLUTE MAXIMUM RATINGS (TA =+ºC) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO V Collector to Emitter Voltage VCEO 9.2 V Emitter to Base Voltage VEBO 2.8 V Collector Current IC ma Total Power Dissipation Ptot Note 1. W Junction Temperature Tj C Storage Temperature Tstg 6 to + C Note Mounted on 34.2 cm 2.8 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. California Eastern Laboratories

2 THERMAL RESISTANCE (TA = C) PARAMETER SYMBOL RATINGS UNIT Thermal Resistance from Junction to Ambient Note Rthj-a 8 C/W Note Mounted on 34.2 cm 2.8 mm (t) glass epoxy PWB RECOMMENDED OPERATING RANGE (TA = C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector to Emitter Voltage VCE V Collector Current IC 4 ma Input Power Note Pin dbm Note Input power under conditions of VCE 4. V,

3 ELECTRICAL CHARACHTERISTICS (TA = C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT DC Characteristics Collector Cut-off Current ICBO VCB = V, IE = ma 1 μa Emitter Cut-off Current IEBO VEB =. V, IC = ma 1 μa DC Current Gain hfe Note 1 VCE = 3 V, IC = ma RF Characteristics Gain Bandwidth Product ft VCE = 3.6 V, IC = ma, GHz Insertion Power Gain VCE = 3.6 V, IC = ma, 19 db Maximum Stable Gain MSG Note 2 VCE = 3.6 V, IC = ma, 23 db Linear gain (1) Linear gain (2) Output Power (1) Output Power (2) Collector Efficiency (1) Collector Efficiency (2) GL GL Po Po Notes 1. Pulse measurement: PW 3 μs, Duty Cycle 2% ηc ηc VCE = 3.6 V, IC (set) = 3 ma (RF OFF),, Pin = dbm db VCE = 3.6 V, IC (set) = 3 ma (RF OFF), f = 9 MHz, Pin = dbm 16 db VCE = 3.6 V, IC (set) = 3 ma (RF OFF),, Pin = dbm dbm VCE = 3.6 V, IC (set) = 3 ma (RF OFF), f = 9 MHz, Pin = dbm 29 dbm VCE = 3.6 V, IC (set) = 3 ma (RF OFF),, Pin = dbm 6 % VCE = 3.6 V, IC (set) = 3 ma (RF OFF), f = 9 MHz, Pin = dbm 6 % 2. MSG = S21 S12 hfe CLASSIFICATION RANK FB Marking SN hfe Value 8 to 18

4 TYPICAL CHARACHTERISTICS (TA = + C, unless otherwise specified ) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Total Power Dissipation Ptot (mw) Mounted on Glass epoxy PWB (34.2 cm 2.8 mm (t) ) Nature Neglect Reverse Transfer Capacitance Cre (pf) f = 1 MHz Ambient Temperature TA (ºC) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 3 V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 4 V Base to Emitter Voltage VBE (V) Base to Emitter Voltage VBE (V) 4 3 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE ma 9 ma 8 ma 7 ma 6 ma ma 4 ma 3 ma 2 ma IB = 1 ma Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics.

5 DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 3 V VCE = 4 V DC Current Gain hfe DC Current Gain hfe Gain Bandwidth Product ft (GHz) GAIN BANDWIDTH PRODUCT VCE = 3 V Gain Bandwidth Product ft (GHz) GAIN BANDWIDTH PRODUCT VCE = 3.6 V GAIN BANDWIDTH PRODUCT INSERTION POWER GAIN,, MSG vs. FREQUENCY Gain Bandwidth Product ft (GHz) VCE = 4 V MSG VCE = 3 V IC = ma.1 1 Frequency f (GHz) Remark The graphs indicate nominal characteristics.

6 4 3 3 INSERTION POWER GAIN,, MSG vs. FREQUENCY MSG VCE = 3.6 V IC = ma INSERTION POWER GAIN,, MSG vs. FREQUENCY MSG VCE = 4 V IC = ma.1 1 Frequency f (GHz) Frequency f (GHz) INSERTION POWER GAIN,, MSG INSERTION POWER GAIN,, MSG 3 MSG VCE = 3 V MSG VCE = 3 V f = 9 MHz - INSERTION POWER GAIN,, MSG INSERTION POWER GAIN,, MSG 3 MSG VCE = 3.6 V MSG VCE = 3.6 V f = 9 MHz - Remark The graphs indicate nominal characteristics.

7 3 INSERTION POWER GAIN,, MSG MSG VCE = 4 V INSERTION POWER GAIN,, MSG MSG VCE = 4 V f = 9 MHz - Output Power Pout (dbm), Power Gain GP (db) 3 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER VCE = 3.6 V, IC (set) = 3 ma GP Pout IC - - ηc Input Power Pin (dbm) 6 4 3, Collector Efficiency η C (%) Output Power Pout (dbm), Power Gain GP (db) 3 OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER VCE = 3.6 V, f = 9 MHz IC (set) = 3 ma GP Pout - - IC ηc Input Power Pin (dbm) 6 4 3, Collector Efficiency η C (%) NOISE FIGURE, ASSOCIATED GAIN Ga Noise Figure NF (db) NF 1 VCE = 3.6 V Associated Gain Ga (db) Remark The graphs indicate nominal characteristics.

8 PA EVALUATION BOARD () GND Vb VC GND C9 R1 C C1 C8 RF IN SN RF OUT C2 C7 C3 L1 C4 C C6 L2 Notes mm, t =.8 mm double sided copper clad glass epoxy PWB. 2. Back side: GND pattern 3. Solder gold plated on pattern 4. : Through holes PA EVALUATION CIRCUIT () VCE VBE R1 C9 C L2 RF IN C1 L1 C2 C3 C4 C C6 C7 C8 RF OUT The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

9 COMPONENT LIST VALUE MAKER C1 3 pf Murata C2 6 pf Murata C3, C4 7 pf Murata C 3 pf Murata C6. pf Murata C7 pf Murata C8 pf Murata C9, C nf Murata L1 nh Toko L2 3 nh Toko R1 3 Ω SSM PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS Output Power Pout (dbm), Power Gain GP (db) OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 3 VCE = 3.6 V, IC (set) = 4 ma GP Pout IC - - ηc Input Power Pin (dbm) 6 4 3, Collector Efficiency η C (%) Remark The graphs indicate nominal characteristics.

10 DISTORTION EVALUATION BOARD () GND Vb VC GND C R1 C12 C11 C1 C9 RF IN SN RF OUT C8 C2 C3 L1 C4 C C6 C7 L2 Notes mm, t =.8 mm, double sided copper clad glass epoxy PWB. 2. Back side: GND pattern 3. Solder gold plated on pattern 4. : Through holes DISTORTION EVALUATION CIRCUIT () VCE R1 VBE C11 C12 C RF IN C1 L1 C2 C3 C4 C C6 L2 C7 C8 C9 RF OUT The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.

11 COMPONENT LIST VALUE MAKER C1 47 pf Murata C2 12 pf Murata C3, C4 7 pf Murata C 3 pf Murata C6 6 pf Murata C7. pf Murata C8 pf Murata C9 1 pf Murata C, C12 nf Murata C11 1 μf Murata L1 nh Toko L2 nh Toko R1 3 Ω SSM DISTORTION EVALUATION CIRCUIT TYPICAL CHARACTERISTICS 3rd Order Intermodulation Distortion IM3 (dbc) RD ORDER INTERMODULATION DISTORTION vs. 1 TONE OUTPUT POWER VCE = 3.6 V,, IC (set) = 3 ma, offset = 1 MHz - 1 tone Output Power Pout (dbm) Remark The graphs indicate nominal characteristics.

12 3-PIN POWER MINIMOLD (34 PACKAGE) (UNIT:mm) 4.±.1 1.6±.2 1.± ±.1 4.±..8 MIN..42±.6.47± ± PIN CONNECTIONS 1. Collector 2. Emitter 3. Base Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 3/7/ A Business Partner of NEC Compound Semiconductor Devices, Ltd.

13 49 Patrick Henry Drive Santa Clara, CA Telephone: (48) 919- Facsimile: (48) Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2/9/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 3/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix A indicates that the device is Pb-free. The AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Concentration Limit per RoHS (values are not yet fixed) < PPM Concentration contained in CEL devices -A -AZ Not Detected (*) Mercury < PPM Not Detected Cadmium < PPM Not Detected Hexavalent Chromium < PPM Not Detected PBB < PPM Not Detected PBDE < PPM Not Detected If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.