NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
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1 NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES LOW COST HIGH GAIN BANDWIDTH PRODUCT: ft = MHz TYP LOW COLLECTOR TO BASE TIME CONSTANT: CC r b'b = 5 ps TYP LOW FEEDBACK CAPACITANCE: CRE=.55 pf TYP DESCRIPTION The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry and TV tuner designs. The device features stable oscillation and small frequency drift during changes in the supply voltage and over the ambient temperature range. ELECTRICAL CHARACTERISTICS (TA = 5 C) PART NUMBER NE944 EIAJ REGISTERED NUMBER SC484 SC545 PACKAGE CODE SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX ICBO Collector Cutoff Current, VCB = V, IE = µa.. hfe DC Current Gain, VCE = V, IC = 5. ma VCE(sat) Collector Saturation Voltage, IC = ma, IB =. ma V.5.5 ft Gain Bandwidth Product, VCE = V, IE = 5 ma GHz.... COB Output Capacitance, VCB = V, IE = ma, f =. MHz pf.7. CC rb'b Collector to Base Time Constant, VCE = V, IE = -5. ma, f =.9 MHz ps CRE Feedback Capacitance, VCB = V, IE = ma, f =. MHz pf.55. RTH (J-C) Thermal Resistance, Junction to Case (infinite heat sink) C/W RTH (J-A) Thermal Resistance, Junction to Ambient (free air) C/W 8 6 PT Power Dissipation mw 5 5. Electronic Industrial Association of Japan. California Eastern Laboratories
2 ABSOLUTE MAXIMUM RATINGS (TA = 5 C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V VCEO Collector to Emitter Voltage V 5 VEBO Emitter to Base Voltage V. IC Collector Current ma 5 TJ Junction Temperature NE944, NE944 C 5 C 5 TSTG Storage Temperature C -55 to +5. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 5 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DC CURRENT GAIN vs. COLLECTOR CURRENT FREE AIR Total Power Dissipation, PT (mw) NE944 FREE AIR DC Current Gain, hfe 9 5 VCE = V VCE = V Ambient Temperature, TA ( C) Collector Current, IC (ma) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT TYPICAL DEVICE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Gain Bandwidth Product, ft (GHz) VCE = -5 V Feedback Capacitance, Cre (pf) f =. MHz Collector Current, IC (ma). 5 7 Collector to Base Voltage, VCB (V)
3 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/5 VCE =.5 V, IC =.5 ma VCE = V, IC = 5 ma VCE = V, IC = 5 ma NE944 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT VCE IC (MHz) (db) (db) MAG ANG Rn/5 (V) (ma) VCE = 8 V, IC = 5 ma VCE = V, IC = 5 ma
4 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 5 C) j j5 j5 S GHz 5 5 j S.5 GHz S.5 GHz 5 S 8.5 GHz S..5 GHz S GHz 6 S GHz j -j5 S GHz -j5 -j Coordinates in Ohms Frequency in GHz (VCE =.5 V, IC =.5 ma) VCE =.5 V, IC =.5 ma FREQUENCY S S S S K S MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) (db) VCE = V, ICE = 5 ma Gain Calculations: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S S MAG = Maximum Available Gain MSG = Maximum Stable Gain
5 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 5 C) j5 j5 j 9 6 j S GHz 5 S.5 GHz S GHz S GHz -j 5 5 -j5 S GHz -j5 S.5 GHz -j S.5 GHz Coordinates in Ohms Frequency in GHz (VCE = V, IC = ma) S.5 GHz VCE = V, IC = ma FREQUENCY S S S S K S MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) (db) VCE = V, Ic = 5 ma Gain Calculations: MAG = S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain
6 TYPICAL COMMON BASE SCATTERING PARAMETERS (TA = 5 C) S GHz j5 j5 j j -j 5 5 S.5 GHz -j5 S GHz -j5 S GHz S.5 GHz -j Coordinates in Ohms Frequency in GHz (VCB =.5 V, IC =.5 ma) S GHz S.5 GHz -9 S.5 GHz VCB =.5 V, IC =.5 ma FREQUENCY S S S S K S MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) (db) VCB = V, lc = 5 ma VCE = V, IC = ma Gain Calculations: MAG = S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain
7 TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 5 C) j5 j5 j 9 6 Coordinates in Ohms Frequency in GHz (VCE = V, IC = 5 ma) NE944 VCE = V, IC = 5 ma -j5-9 FREQUENCY S S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = V, lc = ma VCE = V, IC = ma Gain Calculations: MAG = S S j (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = + - S - S, = S S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain -j 5 5 -j5 S.4 GHz S.4 GHz S.5 GHz -j S.5 GHz S S.5 GHz..5.5 GHz S.4 GHz S.4 GHz
8 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE PACKAGE OUTLINE RECOMMENDED P.C.B. LAYOUT. ±.. ± ± (ALL LEADS).7.9 ±..5 MARKING LEAD CONNECTIONS. Emitter. Base. Collector to PACKAGE OUTLINE PACKAGE OUTLINE RECOMMENDED P.C.B. LAYOUT ± (ALL LEADS). to LEAD CONNECTIONS. Emitter. Base. Collector to ORDERING INFORMATION PART NUMBER QUANTITY PACKAGING -T Tape & Reel NE944-TB Tape & Reel EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 459 Patrick Henry Drive Santa Clara, CA (48) Telex 4-69 FAX (48) Hour Fax-On-Demand: 8-9- (U.S. and Canada only) Internet: DATA SUBJECT TO CHANGE WITHOUT NOTICE 9//
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Please call sales office for
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AT-85 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-85 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-85 is
500 MHz AM/ASK RECEIVER IC UPC8116GR
MHz AM/ASK RECEIVER IC UPCGR FEATURES INTERNAL BLOCK DIAGRAM WIDEBAND RF & LO BANDWITH: ~ MHz HIGH GAIN: db Typical DYNAMIC RANGE: 7 db LOW POWER DISSIPATION: mw @ V POWER SAVE FUNCTION SMALL PACKAGE:
AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Data Sheet
AT-86 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-86 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-86 is
DATA SHEET. NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05)
DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD -PIN THIN-TYPE SUPER MINIMOLD (M) FEATURES The device is an ideal choice for low noise,
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
NPN SILICON GERMANIUM RF TRANSISTOR NESG331M NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M, 212 PKG) FEATURES The device is an ideal choice for
WIDEBAND IQ DEMODULATOR FOR DIGITAL RECEIVERS VCC (IFQ) VCC (RF)
FEATURES BROADBAND OPERATION RF & LO DC to GHz IF (IQ) DC to MHz WIDEBAND IQ PHASE AND AMPLITUDE MATCHING Amplitude Matching: ±. db Typical Phase Matching: ±. (driven in phase) AGC DYNAMIC RANGE: db Typical
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5 V, SUPER MINIMOLD WIDEBAND SI RFIC AMPLIFIER
V, SUPER MINIMOLD WIDEBAND SI RFIC AMPLIFIER UPC278TB FEATURES GAIN vs. FREQUENCYand TEMPERATURE HIGH DENSITY SURFACE MOUNTING: pin super minimold or SOT-33 package HIGH GAIN: 1 db TYP SATURATED OUTPUT
MCH6101 / MCH6201 MCH6101 / MCH6201. Applications. Features. Specifications ( ) : MCH6101. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN68A PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT processes.
JEITA Part No. 4-pin power minimold (Pb-Free) Note 1 kpcs/reel CAUTION
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold FEATURES Low distortion: IM2 = 59.0 db TYP., IM3 = 82.0 db TYP. @, IC = 50 ma Low noise NF = 1.5 db TYP. @,
DISCONTINUED V NE C TO X BAND N-CHANNEL GaAs MESFET. California Eastern Laboratories. PACKAGE DIMENSIONS (Units in mm) DESCRIPTION
FEATURES PART NUMBER PACKAGE OUTLINE 18 SYMBO PARAMETERS AND CONDITIONS MIN TYP MAX Gs Power Gain at VDS = 3 V, ID = 30 ma, f = 12 GHz db 5.0 P1dB C TO X BAND N-CHANNEL GaAs MESFET HIGH POWER GAIN: Gs
NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD
NPN SiGe RF ANALOG INTEGRATED CIRCUIT PA901TU NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD DESCRIPTION The PA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone
UHF POWER TRANSISTOR
NPN SiGe RF TRANSISTOR The is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-3 SMD package. The can be used as a driver device or an output device,
NSVF6003SB6/D. RF Transistor 12 V, 150 ma, ft = 7 GHz, NPN Single
NSVFSB RF Transistor 1 V, 1 ma, ft = GHz, NPN Single This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has
Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Features. Description. 100 mil Package. High Output Power:
AT-1 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-1 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-1 is housed
SILICON MMIC L/S BAND DOWNCONVERTER VCC (IF) VCC (MIX) GND (MIX) RF IN GND (MIX) IF OUT. Vagc IF AMP IN GND (IF)
FEATURES WIDEBAND OPERATION: - MHz HIGH DYNAMIC RANGE: +. dbm IIP3 HIGH LO-RF ISOLATION: - dbm Leakage VARIABLE GAIN IF AMP: db Control Range INTERNAL LO SMALL PIN SSOP PACKAGE TAPE AND REEL PACKAGING
Agilent AT Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet
Agilent AT-135 Up to GHz Low Noise Silicon Bipolar Transistor Data Sheet Description Agilent s AT-135 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-135
HIGH ISOLATION VOLTAGE AC INPUT DARLINGTON TRANSISTOR TYPE SOP OPTOCOUPLER
HIGH ISOLATION VOLTAGE AC INPUT DARLINGTON TRANSISTOR TYPE SOP OPTOCOUPLER FEATURES HIGH ISOLATION VOLTAGE BV: 25 kvr.m.s. SMALL THIN PACKAGE 4, 6 pin SOP, pin pitch.27 mm AC INPUT RESPONSE HIGH CURRENT
2SC5374A. RF Transistor 10V, 100mA, ft=5.2ghz, NPN Single SMCP. Features. Specifications
Ordering number : ENA19A SC4A RF Transistor 1V, 1mA, ft=.ghz, NPN Single SMCP http://onsemi.com Features High gain : S1e =1.dB typ (f=1ghz) High cut-off frequency : ft=.ghz typ Specifications Absolute
The 2SC4177 is available in SC-70 Package High DC Current Gain Complementary to 2SA1611 High Voltage Available in SC-70 Package
DESCRIPTION FEATURES The is available in SC-70 Package High DC Current Gain Complementary to 2SA1611 High Voltage Available in SC-70 Package ORDERING INFORMATION APPLICATIONS Package Type SC-70 Part Number
2SA1743 SILICON POWER TRANSISTOR DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING. PACKAGE DRAWING (UNIT: mm) FEATURES
DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed switching and features a high hfe at low
2SD1012. Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single SPA. Specifications. Absolute Maximum Ratings at Ta=25 C
Ordering number : EN066F SD1 Bipolar Transistor 1V, 0.A, Low VCE(sat), NPN Single SPA http://onsemi.com Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Collector-to-Base
2SC5245A. RF Transistor 10V, 30mA, ft=8ghz, NPN Single MCP. Features. Specifications. : NF=1.4dB typ (f=1.5ghz) High gain
Ordering number : ENA1A SCA RF Transistor 1V, ma, ft=ghz, NPN Single MCP http://onsemi.com Features Low-noise : NF=.9dB typ (f=1ghz) : NF=1.dB typ (f=1.ghz) High gain : S1e =1dB typ (f=1.ghz) High cut-off
55GN01FA. RF Transistor 10V, 70mA, ft=5.5ghz, NPN Single SSFP. Features. Specifications
Ordering number : ENA111A GN01FA RF Transistor V, 70mA, ft=.ghz, NPN Single SSFP http://onsemi.com Features High cut-off frequency : ft=.ghz typ High gain : S1e =11dB typ (f=1ghz) =19dB typ (f=400mhz)
DATA SHEET NE664M04 / 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES DATA SHEET NPN SILON RF TRANSISTOR NE664M4 / 2SC74 NPN SILON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFATION (.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M4) Ideal for 46 MHz to 2.4 GHz
NEC's HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES
NEC's HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES PS26-, -2, -4 PS26L-, -2, -4 FEATURES HIGH ISOLATION VOLTAGE (BV) Vr.m.s.: normal specification products HIGH COLLECTOR TO EMITTER
ARCHIVE INFORMATION MMBR951 MRF957. Freescale Semiconductor, I. The RF Line SEMICONDUCTOR TECHNICAL DATA
nc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR9/D The RF Line Designed for use in high gain, low noise small signal amplifiers. This series features excellent broadband linearity and is offered
2SA2016 / 2SC5569 2SA2016 / 2SC5569. Applications. Features. Specifications ( ) : 2SA2016. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN69B SA16 / SC69 SA16 / SC69 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (1 W) 3-PIN POWER MINIMOLD (34 PKG)
FEATURES NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (1 W) 3-PIN POWER MINIMOLD (34 PKG) This product is suitable for medium output power
NEC's SUPER LOW NOISE HJ FET
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PD Operating Junction and Storage Temperature Range TJ, Tstg 65 to +150 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF4427/D The RF Line Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount
3V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER
3V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER UPC277TB FEATURES HIGH GAIN: 2 db at 9 to MHz Typical HIGH OUTPUT POWER: PSAT = +2. dbm at 9 MHz + dbm at MHz LOW BIAS VOLTAGE: 3. V Typical, 2.7 V Minimum
(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA. Large current capacity High-speed switching
Ordering number : EN8A SA169/SC61 Bipolar Transistor (-)V, (-)1A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT
(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
Ordering number : EN6D SA141/SC64 Bipolar Transistor (-)1V, (-)A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
15C01M. Bipolar Transistor 15V, 0.7A, Low VCE(sat) NPN Single MCP. Applications. Features. Specifications. Low-frequency Amplifier, muting circuit
Ordering number : ENA 1C1M Bipolar Transistor 1V,.A, Low VCE(sat) NPN Single MCP http://onsemi.com Applications Low-frequency Amplifier, muting circuit Features Large current capacity Low collector-to-emitter
2SB1201/2SD Marking Packing Type (TP-FA) : TL Electrical Connection (TP, TP-FA)
Ordering number : EN11C SB1/SD181 SANYO Semiconductors DATA SHEET SB1/SD181 Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes
CYStech Electronics Corp.
Page No. : 1/7 PNP Epitaxial Planar Transistor BVCEO -V IC -1A RCE(SAT) 32mΩ(typ.) Features Low VCE(SAT), VCE(SAT)= -.16V (Typ.) @ IC/IB=-5mA/-5mA High breakdown voltage, BVCEO=-V Complementary to BTD1782N3
PRELIMINARY DATA SHEET IQ DEMODULATOR FOR DIGITAL VIDEO/DATA RECEIVER. Vcc (I) GND (I) VAGC GND (RF) RF IN RF IN GND (RF) Vcc (RF) GND (Q) Vcc (Q)
PRELIMINARY DATA SHEET FEATURES DESCRIPTION IQ DEMODULATOR FOR DIGITAL VIDEO/DATA RECEIVER ON CHIP 9 PHASE SHIFTER IQ PHASE AND AMPLITUDE BALANCE: Amplitude Balance: ±.5 db Phase Balance: ± 2. LOW DISTORTION:
30A02CH. Bipolar Transistor 30V, 0.7A, Low VCE(sat) PNP Single CPH3. Applications. Features. Specifications
Ordering number : EN8A ACH Bipolar Transistor V,.A, Low VCE(sat) PNP Single CPH http://onsemi.com Applications Low-frequency Amplifier, high-speed switching, small motor drive Features Large current capacitance
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Low Cost SO-8 Plastic Surface Mount Package.
High-speed switching Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm) High allowable power dissipation
Ordering number : EN811A MCH14/MCH4 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single MCPH http://onsemi.com Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption
Small Signal General Purpose Transistors (PNP) BC556/BC557/BC558. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Small Signal General Purpose Transistors (PNP) Small Signal General Purpose Transistors (PNP) Features PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications RoHS compliance Mechanical