HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES

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1 HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES PS2532-, -2, -4 PS2532L-, -2, -4 FEATURES HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN HIGH COLLECTOR TO EMITTER VOLTAGE VCEO = 3 V MIN ULTRA HIGH CURRENT TRANSFER RATIO CTR: 5% MIN HIGH SPEED SWITCHING tr, tf = µs TYP ISOLATED CHANNELS PER EACH PACKAGE, 2, OR 4 CHANNELS AVAILABLE DIP PACKAGE DESCRIPTION PS2532-, -2, -4 and PS2532L-, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor. PS2532-, -2 and -4 are in a plastic DIP (Dual In-line Package) and PS2532L-, -2 and- 4 are in a lead bending type (Gull-wing) for surface mount. APPLICATIONS DA POWER SUPPLY TELECOMMUNICATIONS ELECTRICAL CHARACTERISTICS (TA = 25 C) Coupled Transistor Diode PART NUMBER PS2532-, -2, -4, PS2532L-, -2, -4 SYMBOLS PARAMETERS UNITS MIN TYP VF Forward Voltage, IF = ma V.5.4 IR Reverse Current, VR = 5 V µa 5 C Junction Capacitance, V=, f =. MHz pf 3 ICEO Collector to Emitter Dark Current, VCE = 3 V, IF = na 4 BVCEO Collector to Emitter Breakdown Voltage, IC = ma, IB = V 3 BVEBO Emitter to Base Breakdown Voltage, IE = µa, IC = V 6 CTR Current Transfer Ratio, IF = ma, VCE = 2 V % VCE(sat) Collector Saturation Voltage, IF = ma, IC = 2 ma V. R-2 Isolation Resistance, Vin-out = k VDC Ω C-2 Isolation Capacitance, V =, f = MHZ pf.6 tr Rise Time, VCC = 5 V, IC = ma µs tf Fall Time, VCC = 5 V, IC = ma µs Note:. Test Circuit for Switching Time PULSE INPUT VCC PW = µs ( Duty Cycle = /) IF 5 Ω 2 3 Vout RL = Ω PS2532- PS PS California Eastern Laboratories

2 PS2532-, -2, -4, PS2532L-, -2, -4 ABSOLUTE IMUM RATINGS (TA = 25 C) SYMBOLS PARAMETERS UNITS RATINGS PS PS2532-2, -4 PS2532L - PS2532L -2, -4 Diode VR Reverse Voltage V 6 6 IF Forward Current (DC) ma 8 8 PD Power Dissipation mw/ch 5 2 IF (PEAK) Peak Forward Current A (PW = µs, Duty Cycle %) Transistor VCEO Collector to Emitter Voltage V 3 3 VECO Emitter to Collector Voltage V 6 6 IC Collector Current ma 5 5 PC Power Dissipation mw/ch 3 3 Coupled BV Isolation Voltage 2 Vr.m.s. 5 5 TSTG Storage Temperature C -55 to to +5 TOP Operating Temperature C -55 to to + TSOL Lead Temperature C (Soldering s) Notes:. Operation in excess of any one of these parameters may result in permanent damage. 2. AC voltage for minute at TA = 25 C, RH = 6 % between input and ouput. TYPICAL PERFORMANCE CURVES (TA = 25 ) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 5 4 Diode Power Dissipation, PD (mw) 5 PS2532-2, -4 PS2532L-2, -4 PS2532- PS2532L-.2 mw/ C.5 mw/ C Transistor Power Dissipation, PC (mw) FORWARD CURRENT vs. FORWARD VOLTAGE COLLECTOR CURRENT vs. COLLECTOR to EMITTER VOLTAGE 6 Forward Current, IF (ma). TA = C 75 C 5 C 25 C C -25 C -55 C Collector Current, IC (ma) ma 3. ma 2.5 ma 4.5 ma 4. ma 3.5 ma 2. ma.5 ma. ma 2 IF =.5 ma Forward Voltage, VF (V) Collector to Emitter Voltage, VCE (V)

3 PS2532-, -2, -4, PS2532L-, -2, -4 TYPICAL PERFORMANCE CURVES (TA = 25 C) Collector to Emitter Dark Current, ICEO (na) µ µ n n n p COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE VCE = 3 V Collector Current, IC (ma) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE ma 2. ma. ma IF =.5 ma..2 Collector Saturation Voltage, VCE(sat) (V) NORMALIZED OUTPUT CURRENT vs. AMBIENT TEMPERATURE CURRENT TRANSFER RATIO (CTR) vs. FORWARD CURRENT.2 5 VCE = 2 V CTR, Normalized Output Current Normalized to. at TA = 25 C IF = ma, VCE = 2 V Current Transfer Ratio, CTR (%) Sample A Sample B Ambient Temperature,TA ( C) Forward Current, IF (ma) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE Switching Time, t (µs) VCC = V, IC = ma Pulse Width = 5 ms Duty Cycle = /2 2 5 tr td tf ts 5 k 2 k Voltage Gain, Av (db) VCE = 4 V, IC = ma VIN =. VP-P kω -25 µf 47 VIN Ω RL VOUT -3.. Ω Ω kω Load Resistance, RL (Ω) Frequency, f (khz)

4 PS2532-, -2, -4, PS2532L-, -2, -4 TYPICAL PERFORMANCE CURVES (TA = 25 ) CTR DEGRADATION.2 IF = ma. CTR, Normalized TA = 6 C TA = 25 C Time, Hr OUTLINE DIMENSIONS (Units in mm) DIP (Dual In-Line Package) PS2532- PS Anode 2. Cathode 3. Emitter 4. Collector 2 3 4, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector. MIN ±..25 M to 5 MIN ±..25 M to 5 PS , 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9,, 3, 5. Emitter, 2, 4, 6. Collector MIN ±..25 M to 5

5 PS2532-, -2, -4, PS2532L-, -2, -4 OUTLINE DIMENSIONS (Units in mm) Lead Bending type (Gull-Wing) PS2532L- PS2532L Anode 2. Cathode 3. Emitter 4. Collector , 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector to.2.5 to.2.34 ±..25 M 9.6 ±.4.9 ± ±..25 M 9.6 ±.4.9 ±.25 PS2532L , 3, 5, 7. Anode 2, 4, 6, 8. Cathode 9,, 3, 5. Emitter, 2, 4, 6. Collector.5 to.2.34 ±..25 M 9.6 ±.4.9 ±.25 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 459 Patrick Henry Drive Santa Clara, CA (48) Telex FAX (48) DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: /3/2

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