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1 NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE SERIES FEATURES HIGH INSERTION GAIN: 8.5 db at 5 MHz LOW NOISE FIGURE:.5 db at 5 MHz HIGH POWER GAIN: db at GHz LARGE DYNAMIC RANGE: 9 dbm at db, GHz Gain Compression DESCRIPTION PLEASE NOTE: The following part numbers from this datasheet are nonpromotive: NE NE NE9 The following part numbers from this datasheet are discontinued: NE7 NE5 Please call sales office for details. NEC's NE series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE series is available as a chip or in several package styles. The series uses the NEC gold, platinum, titanium, and platinum-silicide metallization system to provide the utmost in reliability. NE7 is available in both common-base and common-emitter configurations and has been qualified for high-reliability space applications. NE5 TYPICAL NOISE PARAMETERS (TA = 5 C) FREQ. NFOPT GA ΓOPT (MHz) (db) (db) MAG ANG Rn/5 VCE = V, IC = 5 ma VCE = V, IC = ma B (CHIP) 7/7B (SOT STYLE) E 5 (MICRO-X) FREQ. NFOPT GA ΓOPT 9 (SOT 4 STYLE) NE9 TYPICAL NOISE PARAMETERS (TA = 5 C) (MHz) (db) (db) MAG ANG Rn/5 VCE = V, IC = ma California Eastern Laboratories
2 NE SERIES ELECTRICAL CHARACTERISTICS (TA = 5 C) PART NUMBER NE NE7 EIAJ REGISTERED NUMBER PACKAGE OUTLINE (CHIP) 7/7B SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX ft Gain Bandwidth Product at VCE = V, IC = ma GHz S Insertion Power Gain at VCE = V, IC = ma, f =.5 GHz db f = GHz db f = GHz db NFMIN Minimum Noise Figure at VCE = V, IC = ma, f =.5 GHz db.5.5 VCE = V, IC = 5 ma, f = GHz db ICBO Collector Cutoff Current at VCB = 5 V, IE = µa.. IEBO Emitter Cutoff Current at VEB = V, IC = µa.. hfe Forward Current Gain at VCE = V, IC = ma CCB Collector to Base Capacitance 4 at VCB = V, IE =, f = MHz pf RTH (J-C) Thermal Resistance (Junction to Case) C/W 7 9 RTH (J-A) Thermal Resistance (Junction to Ambient) C/W 5 PT 5 Total Power Dissipation mw ELECTRICAL CHARACTERISTICS (TA = 5 C) PART NUMBER NE NE5 NE9 EIAJ REGISTERED NUMBER SC5 SC49 SC49 PACKAGE OUTLINE 5 9 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX ft Gain Bandwidth Product at VCE = V, IC = ma GHz SE Insertion Power Gain at VCE = V, IC = ma, f =.5 GHz db f = GHz db 9 9 f = GHz db NFMIN Minimum Noise Figure 6 at VCE = V, IC = ma, f =.5 GHz db.5 VCE = V, IC = 5 ma,.5 f = GHz db.5 f = GHz db.7 4. ICBO Collector Cutoff Current at VCB = 5 V, IE = µa... IEBO Emitter Cutoff Current at VEB = V, IC = µa... hfe Forward Current Gain at VCE = V, IC = ma CCB Collector to Base Capacitance 4 at VCB = V, IE =, f = MHz pf RTH (J-C) Thermal Resistance (Junction to Case) C/W RTH (J-A) Thermal Resistance (Junction to Ambient) C/W PT 5 Total Power Dissipation mw Notes:. Electronic Industrial Association of Japan.. Input and output are tuned for optimum noise figures.. Common base electrical charactristics see S-Parameters. 4. CCB measurement employs a three-terminal capacitance bridge 5. Minimum dissipations based on RTH (J-A) for applications without effective incorporating a guard circuit. The emitter terminal shall be heat sink, maximum dissipations based on RTH (J-C) for applications with connected to the guard terminal. effective heat sink. 6. Output and Input are tuned for minimum noise figure.
3 NE SERIES ABSOLUTE MAXIMUM RATINGS (TA = 5 C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 5 VCEO Collector to Emitter Voltage V VEBO Emitter to Base Voltage V IC Collector Current ma 7 TJ Junction Temperature C TSTG Storage Temperature C -65 to + 4 Notes:. Operation in excess of any one of these parameters may result in permanent damage.. Typical BVCER = 5 V for R Ω.. Maximum TJ for the NE and NE9 is +5 C. 4. Maximum storage temperature for the NE5 is -65 to +5 C. Maximum storage temperature for the NE and NE9 is -55 to 5 C. TYPICAL PERFORMANCE CURVES (TA = 5 C) Total Power Dissipation, PT (mw) RTH (J-A) = 5 C/W NE7 NE, NE7 DC POWER DERATING CURVES NE7 RTH(J-C) = 9 C/W NE RTH(J-C) = 7 C/W 5 5 Ambient Temperature, TA ( C) NE DC POWER DERATING CURVES NE5 DC POWER DERATING CURVES 4 8 Collector Current, IC (ma) Collector Dissipation, PC (mw) Mounted On AlO Substrate (xxmm) And Encapsulated In Epoxy Resin (RTH (J-A) = 67 C/W. Mounted On AlO Substrate (8x9x.8mm) RTH(J-A) = 7 C/W. Mounted On AlO Substrate (x5x.8mm) RTH(J-A) = 49 C/W 4. Free Air, RTH(J-A) = 666 C/W 5 5 Ambient Temperature, TA ( C) VOLTAGE CURRENT CHARACTERISTICS VCE = V Total Power Dissipation, PT (mw) Collector to Base Capacitance, CCB (pf) Emitter to Base Capacitance, CEB (pf) MOUNTED ON AIO SUBSTRATE (X5X.6") RTH(J-A) = 9 C/W FREE AIR RTH(J-A) = 6 C/W CEB DEVICE CAPACITANCE CCB WITH INFINITE HEAT SINK RTH(J-C) = C/W 5 5 Ambient Temperature, TA ( C) f = MHz IE = Base to Emitter Voltage, VBE (V) Collector to Base Voltage, VCB (V) Emitter to Base Voltage, VEB (V)
4 NE SERIES TYPICAL PERFORMANCE CURVES (TA = 5 C) 4 NE7, NE5 GAIN vs. FREQUENCY VCE = V IC = ma 4 NE GAIN vs. FREQUENCY VCE = V IC = ma Gain (db) 4 6 S MAG Gain (db) 4 6 S MAG Frequency, f (GHz) Frequency, f (GHz) NE7 INSERTION GAIN vs. COLLECTOR CURRENT NOISE FIGURE vs. COLLECTOR CURRENT MHz 5 VCE = V GHz Insertion Gain, S (db) VCE = V 5 MHz GHz GHz Noise Figure, NF (db) 4 NE NE7, NE5.5 GHz Collector Current, IC (ma) 5 7 Collector Current, IC (ma) NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY GAIN BANDWIDTH PRODUCT AND FORWARD CURRENT GAIN vs. COLLECTOR CURRENT Noise Figure, NF (db) 5 4 NF GA NE NE, NE7, NE5 VCE = V IC = 5 ma Associated Gain, GA (db) DC Forward Current Gain, hfe 5 7 ft hfe VCE = V Gain Bandwidth Product, ft (GHz) Frequency, f (GHz) Collector Current, IC (ma)
5 NE SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 5 C) j5 j5 j S 9 6 j 5 GHz 5 S 5 GHz S 5 GHz S -j -j5 S 5 GHz -j5 S -j Coordinates in Ohms Frequency in GHz (VCE = V, IC = ma) -5-5 S NE VCE = V, IC = 5 ma FREQUENCY S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = V, IC = ma VCE = V, IC = ma Notes:. S-Parameters include bond wires. BASE:Total wire (s), per bond pad,.5 (9 µm) long each wire. COLLECTOR: Total wire (s), per bond pad,.7" (8 µm) long each wire.. Gain Calculations: MAG = S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = S, = S - S S S S S K - ). EMITTER: Total wire (s), per side,.5" (9 µm) long each wire. WIRE:.7' (7.7 µm) dia., gold.
6 NE SERIES TYPICAL COMMON BASE SCATTERING PARAMETERS (TA = 5 C) j5 j5 j 5 9 S 6 j -j 5 5 -j5 S -j5 S -j Coordinates in Ohms Frequency in GHz (VCB = V, IC = ma) 8-5 S - S S S -6 - NE7B VCB = V, IC = 5 ma FREQUENCY S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCB = V, IC = ma VCB = V, IC = ma VCB = V, IC = 4 ma Note:. Gain Calculations: MAG = S S K - ) (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = S, = S - S S S S S
7 NE SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 5 C) j -j j5 -j5 j5 5 5 S -j5 j S -j Coordinates in Ohms Frequency in GHz (VCE = V, IC = ma) 8 S S 9 S S 8 4 S - NE7 VCE = V, IC = 5 ma FREQUENCY S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = V, IC = ma VCE = V, IC = ma VCE = V, IC = ma Note:. Gain Calculations: MAG = S (K ± K - ). When K, MAG is undefined and MSG values are used. MSG = S, K = S, = S - S S S S S S
8 NE SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 5 C) j5 j5 j 9 6 j -j -j5 GHz 5 5 S GHz S -j5 -j Coordinates in Ohms Frequency in GHZ (VCE = V, IC = ma) S - S 8 6 S -9 S GHz -6 S GHz NE VCE = V, IC = 5 ma FREQUENCY S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = V, IC = ma VCE = V, IC = ma Note:. Gain Calculations: MAG = S S (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = S, = S - S S S S S K - ). MAG = Maximum Available Gain MSG = Maximum Stable Gain
9 NE SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 5 C) j5 j5 j 9 6 j S 5 S -j 5 5 -j5 S S -j5 -j Coordinates in Ohms Frequency in GHz (VCE = V, IC = ma) S S S NE5 VCE = V, IC = 5 ma FREQUENCY S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = V, IC = ma VCE = V, IC = ma VCE = V, IC = ma See note on next page.
10 NE SERIES TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 5 C) j5 j5 j 9 6 j -j -j5 GHz 5 5 S GHz -j5 S -j Coordinates in Ohms Frequency in GHz (VCE = V, IC = 5 ma) S - S GHz S. -9 S S GHz 6 - NE9 VCE = V, IC = 5 ma FREQUENCY S S S K MAG (MHz) MAG ANG MAG ANG MAG ANG MAG ANG (db) VCE = V, IC = ma VCE = V, IC = ma Note:. Gain Calculations: MAG = S S K - ) (K ± When K, MAG is undefined and MSG values are used. MSG = S, K = S, = S - S S S S S MAG = Maximum Available Gain, MSG = Maximum Stable Gain
11 NE SERIES OUTLINE DIMENSIONS (Units in mm) NE (CHIP) PACKAGE OUTLINE 7.5± MARKING C E 5. MIN (ALL LEADS) B.5±.7 BASE EMITTER.7φ ±. INTERNAL CODE E ±. 45 MONTH INDICATOR YEAR INDICATOR *7B has emitter and base reversed.. PACKAGE OUTLINE PACKAGE OUTLINE RECOMMENDED P.C.B. LAYOUT ± (ALL LEADS).4. to to LEAD CONNECTIONS. Emitter. Base. Collector
12 NE SERIES PACKAGE OUTLINE 5 (MICRO-X) E.5±.6 C.8 MIN ALL LEADS B E.55±. φ..8 MAX.55 PACKAGE OUTLINE 9 (SOT-) PACKAGE OUTLINE 9 RECOMMENDED P.C.B. LAYOUT (LEADS,, 4).4.9 ± to. 5 LEAD CONNECTIONS. Collector. Emitter. Base 4. Emitter. 4 ORDERING INFORMATION PART NUMBER QUANTITY PACKAGING NE Waffle Pack NE7/NE7B Hard Pack NE-TB Tape & Reel NE5 ESD Bag NE9-T Tape & Reel Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 8/5/ A Business Partner of NEC Compound Semiconductor Devices, Ltd.
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DESCRIPTION DATA SHEET NPN SILICON RF TRANSISTOR NE683 / SC8 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD The NE683 / SC8 is a low supply voltage
3 Volt, Low Noise High ft Silicon Transistor. MP4T6310 Series. Features SOT-23. Description SOT-143. Chip
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Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Description. Features. 85 Plastic Package
AT-85 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-85 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-85 is
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FEATURES DATA SHEET NPN SILICON RF TRANSISTOR NE688 / SC53 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION -PIN SUPER MINIMOLD High Gain Bandwidth Product (ft = GHz TYP.)
DATA SHEET NE68133 / 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Document No. P6EJVDS (th edition) Date Published March 997 N DATA SHEET SILICON TRANSISTOR NE68 / SC8 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The NE68 / SC8 is an NPN
AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Data Sheet
AT-86 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-86 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-86 is
ARCHIVE INFORMATION MMBR951 MRF957. Freescale Semiconductor, I. The RF Line SEMICONDUCTOR TECHNICAL DATA
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NEC's L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT 2.0 ± 0.2
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NEC's C TO X BAND N-CHANNEL GaAs MES FET PACKAGE OUTLINE
FEATURES HIGH POWER GAIN: GS = 6 db TYP at f = 1 GHz OUTPUT POWER (at 1 db compression): 15 db TYP at f = 1 GHz LOW NOISE/HIGH GAIN: NF =.9 db TYP, Ga = 1 db TYP at f = 4 GHz GATE LENGTH: LG =.8 µm (recessed
JEITA Part No. 4-pin power minimold (Pb-Free) Note 1 kpcs/reel CAUTION
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold FEATURES Low distortion: IM2 = 59.0 db TYP., IM3 = 82.0 db TYP. @, IC = 50 ma Low noise NF = 1.5 db TYP. @,
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET PACKAGE OUTLINE
FEATURES SUPER LOW NOISE FIGURE:.35 db Typ at f = 1 HIGH ASSOCIATED GAIN: 13. db Typ at f = 1 GATE LENGTH:. µm GATE WIDTH: 16 µm DESCRIPTION NEC's NE31 is a Hetero-Junction FET chip that utilizes the junction
Agilent AT Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet
Agilent AT-135 Up to GHz Low Noise Silicon Bipolar Transistor Data Sheet Description Agilent s AT-135 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-135
UHF POWER TRANSISTOR
NPN SiGe RF TRANSISTOR The is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-3 SMD package. The can be used as a driver device or an output device,
NEC's HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES
NEC's HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES PS26-, -2, -4 PS26L-, -2, -4 FEATURES HIGH ISOLATION VOLTAGE (BV) Vr.m.s.: normal specification products HIGH COLLECTOR TO EMITTER
2SC5645. unit : mm 2106A 0.3 3
Ordering number : ENN688 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications Features Low noise : NF=1.dB typ (f=ghz). High cutoff frequency : ft=ghz typ (VCE=).
NEC's HIGH CTR, 4 OR 16 PIN SOP OPTOCOUPLER
NEC's HIGH CTR, 4 OR 6 PIN SOP OPTOCOUPLER PS28- FEATURES HIGH CURRENT TRANSFER RATIO: CTR = 2% TYP @ IF = ma HIGH ISOLATION VOLTAGE: BV: 2.5 k Vr.m.s. SMALL THIN PACKAGE: 4, 6-pin SOP, Pin pitch.27 mm
DATA SHEET NE68039 / 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
Document No. P1367EJV1DS (nd edition) Date Published March 1997 N DATA SHEET SILICON TRANSISTOR NE6839 / SC95 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR PINS MINI MOLD DESCRIPTION The
NSVF6003SB6/D. RF Transistor 12 V, 150 ma, ft = 7 GHz, NPN Single
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SIEGET 25 BFP420. NPN Silicon RF Transistor
NPN Silicon RF Transistor For High Gain Low Noise Amplifiers For Oscillators up to GHz Noise Figure F = 1.05 at 1.8 GHz Outstanding G ms = 20 at 1.8 GHz Transition Frequency f T = 25 GHz Gold metalization
2SA1743 SILICON POWER TRANSISTOR DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING. PACKAGE DRAWING (UNIT: mm) FEATURES
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Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Features. Description. 100 mil Package. High Output Power:
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NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (1 W) 3-PIN POWER MINIMOLD (34 PKG)
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2SC5374A. RF Transistor 10V, 100mA, ft=5.2ghz, NPN Single SMCP. Features. Specifications
Ordering number : ENA19A SC4A RF Transistor 1V, 1mA, ft=.ghz, NPN Single SMCP http://onsemi.com Features High gain : S1e =1.dB typ (f=1ghz) High cut-off frequency : ft=.ghz typ Specifications Absolute
55GN01FA. RF Transistor 10V, 70mA, ft=5.5ghz, NPN Single SSFP. Features. Specifications
Ordering number : ENA111A GN01FA RF Transistor V, 70mA, ft=.ghz, NPN Single SSFP http://onsemi.com Features High cut-off frequency : ft=.ghz typ High gain : S1e =11dB typ (f=1ghz) =19dB typ (f=400mhz)
DATA SHEET. BFR93AW NPN 5 GHz wideband transistor DISCRETE SEMICONDUCTORS Sep 18
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LOW NOISE L TO K-BAND GaAs MESFET SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NFOPT 1
FEATURES LOW NOISE FIGURE NF = 1.6 db TYP at f = 1 GHz HIGH ASSOCIATED GAIN GA = 9.5 db TYP at f = 1 GHz LG = 0.3 µm, WG = 80 µm EPITAXIAL TECHNOLOGY LOW PHASE NOISE DESCRIPTION The features a low noise
DATA SHEET NE664M04 / 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES DATA SHEET NPN SILON RF TRANSISTOR NE664M4 / 2SC74 NPN SILON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFATION (.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M4) Ideal for 46 MHz to 2.4 GHz
LIFETIME BUY LAST ORDER: 25SEP01 LAST SHIP: 26MAR02 MMBR941 MRF947 SERIES. The RF Line SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR91LT1/D The RF Line Designed or use in high gain, low noise small signal ampliiers. This series eatures excellent broadband linearity and is oered
5 V, SUPER MINIMOLD WIDEBAND SI RFIC AMPLIFIER
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CPH6071 CPH6071. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN CPH61 CPH61 Features NPN / PNP Epitaxial Planar Silicon Transistors Video Output Driver,High-Frequency Amplifier Applications Composite type with NPN transistor and PNP transistor
2SC5245A. RF Transistor 10V, 30mA, ft=8ghz, NPN Single MCP. Features. Specifications. : NF=1.4dB typ (f=1.5ghz) High gain
Ordering number : ENA1A SCA RF Transistor 1V, ma, ft=ghz, NPN Single MCP http://onsemi.com Features Low-noise : NF=.9dB typ (f=1ghz) : NF=1.dB typ (f=1.ghz) High gain : S1e =1dB typ (f=1.ghz) High cut-off
DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING 4.0 A
DATA SHEET SILICON POWER TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The is a mold power transistor developed for high-speed switching, and is ideal for use as a driver in devices
CYStech Electronics Corp.
Page No. : 1/7 PNP Epitaxial Planar Transistor BVCEO -V IC -1A RCE(SAT) 32mΩ(typ.) Features Low VCE(SAT), VCE(SAT)= -.16V (Typ.) @ IC/IB=-5mA/-5mA High breakdown voltage, BVCEO=-V Complementary to BTD1782N3
Old Company Name in Catalogs and Other Documents
To our customers, Old Company Name in Catalogs and Other Documents On April 1 st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took
2SB1203/2SD1803. Relay drivers, high-speed inverters, converters, and other general high-current switching applications
Ordering number : EN8C SB/SD8 SANYO Semiconductors DATA SHEET SB/SD8 Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector-to-emitter
DATA SHEET NE97833 / 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER. Parameter Symbol Test Conditions MIN. TYP. MAX.
DATA SHEET Silicon Transistor NE97833 / SA978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES PACKAGE DIMENSIONS High ft (in milimeters) ft = 5.5 GHz TYP. Se =. db TYP. @f =. GHz, VCE = V,
HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE MULTI PHOTOCOUPLER SERIES
HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE MULTI PHOTOCOUPLER SERIES PS2-, -2, -4 PS2L-, -2, -4 FEATURES HIGH ISOLATION VOLTAGE BV: kvr.m.s. MIN HIGH COLLECTOR TO EMITTER VOLTAGE VCEO: 8 V MIN HIGH
MRF581 MRF581G MRF581A MRF581AG
G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS *G Denotes RoHS Compliant, Pb free Terminal Finish Features Low Noise - 2.5 db @ 500 MHZ Gain at Optimum Noise Figure = 15.5 db @ 500 MHz Ftau - 5.0 GHz
NPN Silicon MAXIMUM RATINGS THERMAL CHARACTERISTICS DEVICE MARKING. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS
NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 45 V Collector Base Voltage VCBO 50 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 500 madc THERMAL
Silicon Bipolar High f T Low Noise Medium Power 12 Volt Transistors
Silicon Bipolar High f T Low Noise Medium Power 1 Volt Transistors Features Low Phase Noise Oscillator Transistor mw Driver Amplifier Transistor Operation to GHz Available as Available in Hermetic Surface
The 2SC4177 is available in SC-70 Package High DC Current Gain Complementary to 2SA1611 High Voltage Available in SC-70 Package
DESCRIPTION FEATURES The is available in SC-70 Package High DC Current Gain Complementary to 2SA1611 High Voltage Available in SC-70 Package ORDERING INFORMATION APPLICATIONS Package Type SC-70 Part Number
DATA SHEET. X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction
PD Characteristic Symbol Min Typ Max Unit. V(BR)CEO 15 Vdc. V(BR)CBO 20 Vdc. V(BR)EBO 3.0 Vdc. ICBO 100 nadc. ft 4.5 GHz. Ccb
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The transistor uses the same state of the art microwave transistor chip which features fine line geometry, ion implanted arsenic emitters
MPS2222 MPS2222A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 4 Collector Base Voltage
HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES
HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES PS2532-, -2, -4 PS2532L-, -2, -4 FEATURES HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN HIGH COLLECTOR TO EMITTER VOLTAGE
DISCRETE SEMICONDUCTORS DATA SHEET. BFR520 NPN 9 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET BFR File under Discrete Semiconductors, SC4 September 99 BFR FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent
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To our customers, Old Company Name in Catalogs and Other Documents On April 1 st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took
DATA SHEET NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING 15 A
DATA SHEET SILICON POWER TRANSISTOR 2SC2335 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching,
500 mw When mounted on ceramic substrate (250mm 2 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C
Ordering number : ENC SA1416/SC646 Bipolar Transistor ( )1V, ( )1A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
DC to VHF DIFFERENTIAL VIDEO AMPLIFIER PACKAGE OUTLINE
FEATURES BANDWIDTH AND TYPICAL GAIN: 12 MHz at AVOL = 3 17 MHz at AVOL = 7 MHz at AVOL = VERY SMALL PHASE DELAY GAIN ADJUSTABLE FROM TO 3 DC to VHF DIFFERENTIAL VIDEO AMPLIFIER NO FREQUENCY COMPENSATION
(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
Ordering number : EN6D SA141/SC64 Bipolar Transistor (-)1V, (-)A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
MCH6541. Bipolar Transistor. ( )30V, ( )3A, Low VCE(sat) Complementary Dual MCPH6
Ordering number : EN8949A MCH641 Bipolar Transistor ( )V, ( )A, Low VCE(sat) Complementary Dual MCPH6 http://onsemi.com Applicaitons MOSFET gate drivers, relay drivers, lamp drivers, motor drivers Features
3V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER
3V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER UPC277TB FEATURES HIGH GAIN: 2 db at 9 to MHz Typical HIGH OUTPUT POWER: PSAT = +2. dbm at 9 MHz + dbm at MHz LOW BIAS VOLTAGE: 3. V Typical, 2.7 V Minimum
2SA1418/2SC3648. Bipolar Transistor. ( )160V, ( )0.7A, Low VCE(sat), (PNP)NPN Single PCP. Applicaitons Color TV audio output, inverter
Ordering number : EN188C SA1418/SC648 Bipolar Transistor ( )16V, ( ).A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons Color TV audio output, inverter Features Adoption of FBET, MBIT
Part Number Order Number Package Quantity Supplying Form. (Pb-Free)
NESGM NPN SiGe RF Transistor for Low Noise, High-in Amplification Flat-Lead -Pin Thin-Type Super Minimold (M) FEATURES The device is an ideal choice for low noise, high-gain at low current amplifications.