NEC's C TO X BAND N-CHANNEL GaAs MES FET PACKAGE OUTLINE

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1 FEATURES HIGH POWER GAIN: GS = 6 db TYP at f = 1 GHz OUTPUT POWER (at 1 db compression): 15 db TYP at f = 1 GHz LOW NOISE/HIGH GAIN: NF =.9 db TYP, Ga = 1 db TYP at f = 4 GHz GATE LENGTH: LG =.8 µm (recessed gate) GATE WIDTH: WG = 4 µm DESCRIPTION NEC's NE7S1 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band. The device features a.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for improved RF and DC performance and uniformity. This device's low phase noise and high ft makes it a excellent choice for oscillator applications on a digital LNB (Low Noise Block). The NE7S1 is housed in a low cost plastic package which is available in Tape and Reel. NEC's stringent quality assurance and test procedures ensure the highest reliability performance. APPLICATIONS C to X band low noise amplifiers C to X band oscillators ELECTRICAL CHARACTERISTICS (TA = 5 C) NEC's C TO X BAND N-CHANNEL GaAs MES FET OUTLINE DIMENSION (Units in mm) PACKAGE OUTLINE SO1. ±..65 TYP NE7S1 PART NUMBER NE7S1 PACKAGE OUTLINE S1 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX IGSO Gate to Source Leak Current, VGS = -5 V ua 1. 1 IDSS Saturated Drain Current, VDS = 3 V, VGS = V ma VGS Gate to Source Cutoff Voltage, VDS = 3 V, ID = 1 µa V gm Transconductance, VDS = 3 V, IDS = 3 ma ms 45 GS Power Gain, VDS = 3 V, IDS = 3 ma, f = 1 GHz db 6 P1dB Output Power at 1 db Gain Compression Point at dbm 15. VDS = 3 V, IDS = 3 ma, f = 1 GHz NF Noise Figure, VDS = 3 V, IDS = 1 ma, f = 4 GHz db.9 Ga Associated Gain, VDS = 3 V, IDS = 1 ma, f = 4 GHz db 1 _.15 ±.5 1 P 1.9 ± MAX 4. ±.. ± MAX.5 TYP.±. 1. Source. Drain 3. Source 4. Gate California Eastern Laboratories

2 NE7S1 ABSOLUTE MAXIMUM RATINGS 1 (TA = 5 C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 5. VGS Gate to Source Voltage V -5. VGD Gate to Drain Voltage V -6. IDS Drain Current ma IDSS PT Total Power Dissipation mw 5 PIN Input Power mw 4 TCH Channel Temperature C 15 TSTG Storage Temperature C -65 to Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 5 C) Total Power Dissipation, (PT) mw Drain Current, IDS (ma) Gain Calculation: S1 S1 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Ambient Temperature, TA ( C) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VDS = 3. V Gate to Source Voltage, VGS (V) K - 1 ). Maximum Available Gain MSG = Maximum Stable Gain RECOMMENDED OPERATING CONDITIONS (TA = 5 C) PART NUMBER NE7S1 SYMBOLS PARAMETERS UNITS MIN TYP MAX VDS Drain to Source Voltage V 3 4 IDS Drain Current ma 3 4 ORDERING INFORMATION PART NUMBER SUPPLY FORM MARKING NE7S1-T1 Tape & Reel 1 pcs/reel P NE7S1-T1B 1 Tape & Reel 4 pcs/reel 1. Available if quantity is over 1k per month Drain Current, IDS (ma) Maximum Stable Gain, MSG (db) Maximum Available Gain, MAG (db) Forward Insertion Gain, S1S (db) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Drain to Source Voltage, VDS (V) MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY MSG. S1S MAG. S1 (K ± K - 1 ). S1 When K 1, MAG is undefined and MSG values are used. MSG = S1, S11 - S, K = = S11 S - S1 S1 S1 S1 S1 VDS = 3 V IDS = 1 ma Frequency, f (GHz) VGS =. V (K ± When K 1, MAG is undefined and MSG values are used. MSG = S1, K = S11 - S, = S11 S - S1 S1 S1 S1 S1-1. V -.5 V -. V

3 NE7S1 TYPICAL PERFORMANCE CURVES (TA = 5 C) Output Power, Pout (dbm) OUTPUT POWER vs. INPUT POWER VDS = 3. V, ID = 3 ma fin = 1 GHz Input Power, Pin (dbm)

4 NE7S1 TYPICAL SCATTERING PARAMETERS (TA = 5 C) NE7S1 VDS = 3. V, IDS = 1 ma FREQUENCY S11 S1 S1 S GHz MAG ANG MAG ANG MAG ANG MAG ANG Gain Calculation: S1 (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1, K = S11 - S, = S11 S - S1 S1 S1 S1 S1 S1 Maximum Available Gain MSG = Maximum Stable Gain

5 NE7S1 TYPICAL SCATTERING PARAMETERS (TA = 5 C) NE7S1 VDS = 3. V, IDS = 3 ma FREQUENCY S11 S1 S1 S GHz MAG ANG MAG ANG MAG ANG MAG ANG Gain Calculation: S1 (K ± K - 1 ). When K 1, MAG is undefined and MSG values are used. MSG = S1, K = S11 - S, = S11 S - S1 S1 S1 S1 S1 S1 Maximum Available Gain MSG = Maximum Stable Gain

6 NE7S1 NONLINEAR MODEL SCHEMATIC GATE CGD_PKG.1pF CGS_PKG.8pF Lgx Rgx.71nH 1 ohms FET NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 VTO -.4 RG 8 VTOSC RD.5 ALPHA 8 RS 6 BETA.55 RGMET TQGAMMA.4 TNOM 7 TQGAMMAAC.5 XTI 3 Q 1.5 EG 1.43 TQDELTA.5 VTOTC VBI 1 BETATCE IS 1e-14 FFE 1 N 1.3 FNC () 15e-6 RIS R.5 RID P 1 TAU 3e-1 C.9 CDS.19e-1 RDB 5 CBS 1e-9 CGS CGD.9e-1.5e-1 DELTA1.3 DELTA.3 FC.5 VBR (1) ADS TOM Model Infinity () To simulate phase noise using AF/KF: AF = 1.5 KF = e-1 Q1 Ldx.5nH Rdx 1 ohms Lsx.13nH Rsx.1 ohms SOURCE UNITS Parameter DRAIN CDS_PKG.1PF Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps MODEL RANGE Frequency:.1 to 18 GHz Bias: VDS = V to 4 V, ID = 1 ma to 4 ma Date: / 7/1/4 A Business Partner of NEC Compound Semiconductor Devices, Ltd.