Low Noise and Medium Power GaAs FETs

Transcription

1 C131 REV5_22 Low Noise and Medium Power GaAs FEs FEAURES! Low Noise Figure: NF = db ypical at 1 PHOO ENLARGEMEN! High Associated Gain: Ga = 1 db ypical at 1! High Dynamic Range: 1 db Compression Power P -1 = 24.5 dbm at 1! Breakdown Voltage: BV DGO 9 V! Lg = 5 µm, Wg = 6 µm! All-Gold Metallization for High Reliability! ight Vp ranges control! High RF input power handling capability! 1 % DC ested DESCRIPION he C131 is a GaAs Pseudomorphic High Electron Mobility ransistor (PHEM) chip, which has very low noise figure, high associated gain and high dynamic range. he device can be used in circuits up to 3 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 1% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECRICAL SPECIFICAIONS ( A =25 C) Symbol Conditions MIN YP MAX UNI NF Noise Figure at V DS = 4 V, I DS = 5 ma, f = 1 1. db G a Associated Gain at V DS = 4 V, I DS = 5 ma, f = db P 1dB Output Power at 1dB Gain Compression Point, f = 1 V DS = 6 V, I DS = 8 ma dbm G L Linear Power Gain, f = 1,V DS = 6 V, I DS = 8 ma 9 1 db I DSS Saturated Drain-Source Current at V DS = 2 V, V GS = V 18 ma g m ransconductance at V DS = 2 V, V GS = V 2 ms V P Pinch-off Voltage at V DS = 2 V, I D = 1.2 ma -1.* Volts BV DGO Drain-Gate Breakdown Voltage at I DGO =.3 ma 9 12 Volts R th hermal Resistance 6 C/W Note: * For the tight control of the pinch-off voltage. C131 s are divided into 3 groups: (1) C131P71 : Vp = -.7V to -1.V (2) C131P811 : Vp = -V to -1.1V (3) C131P912 : Vp = -.9V to -1.2V In addition, the customers may specify their requirements. RANSCOM, INC., 9 Dasoong 7 th Road, ainan Science-Based Industrial Park, Hsin-She Shiang, ainan County, aiwan, R.O.C. Web-Site: Phone: Fax: / 6

2 C131 REV5_22 ABSOLUE MAXIMUM RAINGS ( A =25 C) YPICAL NOISE PARAMEERS ( A =25 C) Symbol Parameter Rating V DS Drain-Source Voltage 7. V V GS Gate-Source Voltage - V I DS Drain Current I DSS I GS Gate Current 6 µa P in RF Input Power, CW 24 dbm P Continuous Dissipation 8 mw CH Channel emperature 1 C SG Storage emperature - 65 C to +1 C V DS = 4 V, I DS = 5 ma Frequency (GHz) NF opt (db) G A Γ opt (db) MAG ANG Rn/ CHIP DIMENSIONS 76± 12 D D D 29± 12 S G S G S G S Chip hickness: 1 Drain Pad: 8 x 7 Source Pad: x 8 RANSCOM, INC., 9 Dasoong 7 th Road, ainan Science-Based Industrial Park, Hsin-She Shiang, ainan County, aiwan, R.O.C. Web-Site: Phone: Fax: / 6

3 YPICAL SCAERING PARAMEERS S ( A =25 C) V DS = 4 V, I DS = 5 ma C131 REV5_22 2 FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG * he data does not include gate, drain and source bond wires. S S12 S RANSCOM, INC., 9 Dasoong 7 th Road, ainan Science-Based Industrial Park, Hsin-She Shiang, ainan County, aiwan, R.O.C. Web-Site: Phone: Fax: / 6

4 YPICAL SCAERING PARAMEERS S11 9 S ( A =25 C) V DS = 6 V, I DS = 8 ma.9 FREQUENCY S11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG *he data does not include gate, drain and source bond wires. SMALL SIGNAL MODEL, V DS = 4 V, I DS = 5 ma C131 REV5_22 RANSCOM, INC., 9 Dasoong 7 th Road, ainan Science-Based Industrial Park, Hsin-She Shiang, ainan County, aiwan, R.O.C. Web-Site: Phone: Fax: / S12 S

5 C131 REV5_22 SCHEMAI PARAMEERS Lg Rg Cgs Ri Cgd Gm Cds Rds Rd Ld Lg.57 nh Rs 1.66 Ohm Rg 8 Ohm Ls.19 nh Cgs.959 pf Cds.167 pf Ri 5.78 Ohm Rds 93.2 Ohm Cgd.74 pf Rd Ohm Rs Gm 28 ms Ld.38 nh 5.54 psec Ls SMALL SIGNAL MODEL, V DS = 6 V, I DS = 8 ma SCHEMAI PARAMEERS Lg Rg Cgs Ri Cgd Gm Cds Rds Rd Ld Lg.56 nh Rs 1.88 Ohm Rg Ohm Ls.16 nh Cgs 1.33 pf Cds.185 pf Ri 5.58 Ohm Rds 9.1 Ohm Cgd.52 pf Rd Ohm Rs Gm 3 ms Ld.36 nh 5.63 psec Ls LARGE SIGNAL MODEL, V DS = 6 V, I DS = 8 ma RANSCOM, INC., 9 Dasoong 7 th Road, ainan Science-Based Industrial Park, Hsin-She Shiang, ainan County, aiwan, R.O.C. Web-Site: Phone: Fax: / 6

6 C131 REV5_22 SCHEMAIC OM2 MODEL PARAMEERS Lg Rg Cgs Ris Cgd Rid Id Rs Ls Cds Rdb Cbs Rd Ld Parameters Parameters VO V VMAX.5 V ALPHA 9.54 CGD.554 pf BEA.49 CGS 6.18 pf GAMMA.416 CDS.99 pf DELA.391 RIS 5.5 Ohm Q 4 RID.1 Ohm NG.1 VBR 9 V ND.1 RDB Ohm AU ps CBS.463 pf RG 833 Ohm NOM 25 C RD Ohm LS.1893 nh RS Ohm LG.576 nh IS 1E-11 ma LD.38 nh N 1 AFAC 1 VBI 1 V NFING 1 VDELA V CHIP HANDLING DIE AACHMEN: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (8%Au-2%Sn) perform at stage temperature: 29 C ± 5 C; Handling ool: weezers; ime: less than 1min. WIRE BONDING: he recommended wire bond method is thermocompression bonding with.7 to 1. mil (.18 to.25 mm) gold wire. Stage temperature: 22 C to 25 C; Bond ip emperature: C; Bond Force: 2 to 3 gms depending on size of wire and Bond ip emperature. HANDLING PRECAUIONS: he user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. he static discharge must be less than 3V. RANSCOM, INC., 9 Dasoong 7 th Road, ainan Science-Based Industrial Park, Hsin-She Shiang, ainan County, aiwan, R.O.C. Web-Site: Phone: Fax: / 6