DC-20 GHz Distributed Power Amplifier
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- Helen Hicks
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1 Features Functional Block Diagram Ultra wideband performance High linearity High output power Excellent return losses Small die size Description The CMD is wideband GaAs MMIC distributed power amplifier die which operates from DC to GHz. The amplifier delivers greater than db of gain with a corresponding output db compression point of +9 dbm and output IP of 8 dbm at GHz. The CMD is a ohm matched design which eliminates the need for RF port matching. The CMD offers full passivation for increased reliability and moisture protection. ACG ACG RFIN 8 ACG ACG RFOUT & Electrical Performance - V dd =. V, V gg = -. V, V gg =. V, T A = o C, F = GHz Parameter Min Typ Max Units Frequency Range DC - GHz Gain db Noise Figure. db Input Return Loss db Output Return Loss db Output PdB 9 dbm Supply Current ma
2 Specifications Absolute Maximum Ratings Parameter Rating Drain Voltage,. V Gate Voltage, -. to V Gate Voltage,. V RF Input Power + dbm Channel Temperature, Tch C Power Dissipation, Pdiss. W Thermal Resistance.9 C/W Operating Temperature - to 8 C Storage Temperature - to C Recommended Operating Conditions Parameter Min Typ Max Units 8... V Idd ma -. V. Electrical performance is measured at specific test conditions. Electrical specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the maximum ratings may cause permanent damage. Electrical Specifications, V dd =. V, V gg = -. V, V gg =. V, T A = o C Parameter Min Typ Max Min Typ Max Units Frequency Range DC - - GHz Gain 8 9 db Noise Figure. db Input Return Loss db Output Return Loss 8 db Output PdB 9. 9 dbm Output IP dbm Supply Current ma Gain Temperature Coefficient Noise Figure Temperature Coefficient.9. db/ C.. db/ C
3 Typical Performance Broadband Performance, V dd = V, V gg = -. V, V gg = V, I dd = ma, T A = o C S S S NF Response/dB - Noise Figure/dB Narrow-band Performance, V dd = V, V gg = -. V, V gg = V, I dd = ma, T= o C S S S NF Response/dB - Noise Figure/dB
4 Typical Performance Gain vs. Temperature, V dd = V, V gg = -. V, V gg = V 9 Gain/dB 8 +C +8C -C Noise Figure vs. Temperature, V dd = V, V gg = -. V, V gg = V 9 8 +C +8C -C Noise Figure/dB
5 Typical Performance Output Power, V dd = V, V gg = -. V, V gg = V, T A = o C Response/dBm PdB vs. Temperature, V dd = V, V gg = -. V, V gg = V PdB/dBm PdB Psat +C +8C -C
6 Typical Performance Output IP vs. Temperature, V dd = V, V gg = -. V, V gg = V +C +8C -C Output IP/dBm
7 Mechanical Information Die Outline (all dimensions in microns) Notes:. No connection required for unlabeled pads. Backside is RF and DC ground. Backside and bond pad metal: Gold. Die is 8 microns thick. DC bond pads are 8 microns square. RF bond pads are 8 x 9 microns
8 deg Port B Port A (-) (+) deg DC- GHz Distributed Power Amplifier g Port B Pad Description Pad Diagram For CMD LFT g Port A GND LFT (-) ohm To Gat ohm. uf. uf. uf GB bit LFT LFT LOdeg RF db 8 Port B bit Functional Description Port A db deg IF GND Pad Function Description Schematic ohm matched input GB ACG ACG For CMD & GB ACG ACG Ven Vdet oh T ohm Vee For CMD & ACG LO RF RF Power supply voltage Decoupling and bypass caps required GND Ven ACG Vdet GB RF, out, ACG, IF Low frequency termination. Attach A, B bypass capacitor per application circuit ACG ACG & ctl & LO RF RF Power supply voltage and ohm matched output Vee ACG Ven RF, in, Vctrl ACG, RF, out Low frequency termination. Attach IF bypass capacitor per application circuit Vctrl ACG LO IF, IF 8 Vctrl Power supply voltage Vctrl Decoupling and bypass caps required Vee Backside Ground Connect to RF / DC ground GND
9 Applications Information Assembly Guidelines The backside of the CMD is RF ground. Die attach should be accomplished with electrically and thermally conductive epoxy only. Eutectic attach is not recommended. Standard assembly procedures should be followed for high frequency devices. The top surface of the semiconductor should be made planar to the adjacent RF transmission lines, and the RF decoupling capacitors placed in close proximity to the DC connections on chip. RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use of a.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized. The put and output require a double bond wire as shown. The semiconductor is 8 um thick and should be handled by the sides of the die or with a custom collet. Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handle with care. Assembly Diagram To. uf BYPASS CAP. uf CAP TO GROUND pf BYPASS CAP (example: Presidio part LSABMHR-L) pf CAP TO GROUND To pf BYPASS CAP. uf BYPASS CAP pf CAP TO GROUND. uf CAP TO GROUND (example: Presidio part MVB8XZGKRL) To GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
10 Applications Information Application Circuit pf. uf. uf pf 8 pf. uf. uf pf Note: Drain voltage () must be applied through a broadband bias tee or external bias network. External DC block is required on put. Biasing and Operation The CMD is biased with a positive drain supply, a negative gate supply and a positive gate supply. Performance is optimized when the drain voltage is set to + V. The recommended gate and gate voltages are -. V and + V respectively. Turn ON procedure:.apply gate voltage V gg and set to -. V.Apply drain voltage V dd and set to + V.Apply gate voltage V gg and set to +V Turn OFF procedure:.turn off gate voltage V gg.turn off drain voltage V dd.turn off gate voltage V gg
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More informationCustomised Pack Sizes / Qtys. Support for all industry recognised supply formats: o o o. Waffle Pack Gel Pak Tape & Reel
Design Assistance Assembly Assistance Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming Customised Pack Sizes / Qtys Support for all industry recognised
More informationFeatures. = +25 C, Vdd= 8V, Idd= 75 ma*
HMC46LC5 Typical Applications v3.11 AMPLIFIER, DC - 2 GHz Features The HMC46LC5 is ideal for: Noise Figure: 2.5 db @ 1 GHz Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation
More informationFeatures. = +25 C, Vdd= +5V, Idd = 66mA
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More informationFeatures. = +25 C, Vdd = 5V, Idd = 85 ma*
Typical Applications The is an ideal gain block or driver amplifi er for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Functional Diagram Features Saturated Power: +23 dbm @ 27% PAE Gain: db
More informationFeatures. = +25 C, Vdd= 5V, Idd= 60 ma*
Typical Applications The HMC63 is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram v.67 Vgg2: Optional Gate Bias for AGC HMC63
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More informationAdvance Datasheet Revision: January 2015
Advance Datasheet Revision: January 215 Applications Military SatCom Phased-Array Radar Applications Terminal Amplifiers X = 3.7mm Y = 3.2mm Product Features RF frequency: 43 to 46 GHz Linear Gain: 2 db
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