CMD167P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.0 V, T A = 25 o C, F=12 GHz

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1 Features Functional Block Diagram Low noise figure Low current consumption Single positive supply voltage Pb-free RoHs compliant 3x3 QFN package Description The CMD167P3 is a broadband MMIC low noise amplifier housed in a leadless 3x3 mm plastic surface mount package. The CMD167P3 is ideally suited for EW and communication systems where small size and low power consumption are needed. The device operates from 8 to 16 GHz and delivers greater than 16 db of gain with a corresponding output 1 db compression point of +11 dbm and noise figure of 1.8 db. The CMD167P3 is a 5 ohm matched design which eliminates the need for external DC blocks and RF port matching. Electrical Performance - V dd = 3. V, T A = 25 o C, F=12 GHz Parameter Min Typ Max Units Frequency Range 8-16 GHz Gain 16 db Noise Figure 1.8 db Input Return Loss 18 db Output Return Loss 16 db Output P1dB 11 dbm Supply Current 5 ma

2 Specifications Absolute Maximum Ratings Parameter Rating Drain Voltage, Vdd 5. V RF Input Power + 2 dbm Channel Temperature, Tch 15 C Power Dissipation, Pdiss 416 mw Thermal Resistance 156 C/W Operating Temperature -4 to 85 C Storage Temperature -55 to 15 C Recommended Operating Conditions Parameter Min Typ Max Units Vdd V Idd 5 ma Electrical performance is measured at specific test conditions. Electrical specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the maximum ratings may cause permanent damage. Electrical Specifications - V dd = 3. V, T A = 25 o C Parameter Min Typ Max Min Typ Max Units Frequency Range GHz Gain db Noise Figure db Input Return Loss db Output Return Loss 2 2 db Output P1dB dbm Output IP dbm Supply Current ma Gain Temperature Coefficient Noise Figure Temperature Coefficient db/ C.9.9 db/ C

3 Typical Performance Broadband Performance, V dd = 3. V, I dd = 5 ma, T A = 25 o C S11 S22 S21 NF Response/dB Noise Figure/dB Narrow-band Performance, V dd = 3. V, I dd = 5 ma, T A = 25 o C Response/dB S11 S22 S21 NF Vdd=3V NF Vdd=4V Noise Figure/dB

4 Typical Performance Gain vs. Temperature, V dd = 3. V Gain/dB C +85C -4C Noise Figure vs. Temperature, V dd = 3. V C +85C -4C Noise Figure/dB

5 Typical Performance Output Power, V dd = 3. V & 4. V, T A = 25 o C Response/dBm P1dB Vdd=3V Psat Vdd=3V P1dB Vdd=4V Psat Vdd=4V P1dB vs. Temperature, V dd = 3. V C +85C -4C 14 P1dB/dBm

6 Typical Performance Output IP3 vs. Temperature, V dd = 3. V C +85C -4C 24 Output IP3/dBm

7 Mechanical Information Package Information and Dimensions aaa aaa θ bbb M SYMBOLS DIMENSIONS IN MILLIMETERS MIN NOM MAX A A1.2.5 A3.25REF. b D D E E1 e ΒSC 1.7 L θ 12 aaa bbb.25.1 ccc.1 M.5 Recommended PCB Land Pattern

8 Pin Description Pin Diagram Functional Description Pin Function Description Schematic 1, 2, 5-8, 11-13, 15, 16 N/C No connection required. These pins may be connected to RF/DC ground. 3 RF in DC blocked and 5 ohm matched RF in 1 RF out DC blocked and 5 ohm matched RF out Vdd 14 Vdd Power supply voltage Decoupling and bypass caps required 4, 9 and die paddle Ground Connect to RF / DC ground GND

9 Applications Information Application Circuit Biasing and Operation The CMD167P3 is biased with a single 3. V positive drain supply. RF power can be applied at any time. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.

10 Applications Information Evaluation Board The circuit board shown has been developed for optimized assembly at CMDS. A sufficient number of via holes should be used to connect the top and bottom ground planes. As surface mount processes vary, careful process development is recommended. Bill of Material Designator Value Description J1, J2 SMA End Launch Connector P1 6 Pin Header C1.33 µf Capacitor, Tantalum C2 1 pf Capacitor, 63 C3 1 pf Capacitor, 42 U1 PCB CMD167P3 Low Noise Amplifier CM1118A Evaluation PCB