2 3 ACG1 ACG2 RFIN. Parameter Min Typ Max Units Frequency Range

Transcription

1 Features Functional Block Diagram Ultra wideband performance High linearity High output power Excellent return losses Small die size 2 3 ACG1 ACG2 RFOUT & Vdd Description RFIN 1 The CMD29 is wideband GaAs MMIC distributed power amplifier die which operates from DC to 2 GHz. The amplifier delivers greater than 12 db of gain with a corresponding output 1 db compression point of +29 dbm and output IP3 of 38 dbm at 1 GHz. The CMD29 is a ohm matched design which eliminates the need for RF port matching. The CMD29 offers full passivation for increased reliability and moisture protection. Vgg 8 GB 7 ACG ACG3 6 Electrical Performance V dd = 1. V, V gg = -.9 V, T A = 2 o C, F = 1 GHz Parameter Min Typ Max Units Frequency Range DC 2 GHz Gain 13 db Noise Figure 3. db Input Return Loss 16 db Output Return Loss 17 db Output P1dB 29. dbm Supply Current ma

2 Specifications Absolute Maximum Ratings Parameter Rating Drain Voltage, Vdd 12. V Gate1 Voltage, Vgg -2. to V RF Input Power +3 dbm Channel Temperature, Tch 1 C Power Dissipation, Pdiss.3 W Thermal Resistance, Θ JC 11.9 C/W Operating Temperature - to 8 C Storage Temperature - to 1 C Recommended Operating Conditions Parameter Min Typ Max Units Vdd V Idd 3 ma Vgg -.9 V Igg -2. ma Electrical performance is measured at specific test conditions. Electrical specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the maximum ratings may cause permanent damage. Electrical Specifications V dd = 1. V, V gg = -.9 V, T A = 2 o C Parameter Min Typ Max Min Typ Max Units Frequency Range DC GHz Gain db Noise Figure 3. db Input Return Loss 1 17 db Output Return Loss 1 18 db Output P1dB dbm Output IP3 3 dbm Supply Current 3 3 ma Gain Temperature Coefficient Noise Figure Temperature Coefficient.9.1 db/ C.1.12 db/ C

3 Typical Performance Broadband Performance, V dd = 1 V, V gg = -.9 V, I dd = ma, T A = 2 o C R e s p o n s e / d B - -1 S11 S21 S22 NF 3 N o is e F ig u r e /d B Narrow-band Performance, V dd = 1 V, V gg = -.9 V, I dd = ma, T=2 o C S11 S21 6 R e s p o n s e / d B - -1 S22 NF 3 N o is e F ig u r e /d B

4 Typical Performance Gain vs. Temperature, V dd = 1 V, V gg = -.9 V Gain/dB C 9 8 C C Noise Figure vs. Temperature, V dd = 1 V, V gg = -.9 V C 8 C - C Noise Figure/dB

5 Typical Performance Output Power, V dd = 1 V, V gg = -.9 V, T A = 2 o C Output Power/dBm 28 P1dB PSat P1dB vs. Temperature, V dd = 1 V, V gg = -.9 V P1dB/dBm C 2 8 C C

6 Typical Performance Output IP3 vs. Temperature, V dd = 1 V, V gg = -.9 V 3 Output IP3/dBm C 8 C - C

7 Mechanical Information Die Outline (all dimensions in microns) Notes: 1. No connection required for unlabeled pads 2. Backside is RF and DC ground 3. Backside and bond pad metal: Gold. Die is 7 microns thick. DC bond pads (2, 3,, 6, 7, and 8) are 78 microns square 6. RF bond pads (1 and ) are 18 x 193 microns

8 Pad Description Pad Diagram Functional Description Pad Function Description Schematic 1 RF in ohm matched input RF in 2, 3 ACG1, 2 Low frequency termination. Attach bypass capacitor per application circuit ACG1 ACG2 RF out & Vdd RF out & Vdd Power supply voltage and ohm matched output ACG3, 6 ACG3, Low frequency termination. Attach bypass capacitor per application circuit RF in ACG GB 7 GB Connect to DC ground 8 Vgg Power supply voltage Decoupling and bypass caps required Vgg Backside Ground Connect to RF / DC ground GND

9 Applications Information Assembly Guidelines The backside of the CMD29 is RF ground. Die attach should be accomplished with electrically and thermally conductive epoxy only. Eutectic attach is not recommended. Standard assembly procedures should be followed for high frequency devices. The top surface of the semiconductor should be made planar to the adjacent RF transmission lines, and the RF decoupling capacitors placed in close proximity to the DC connections on chip. RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use of a.8 mil thermosonic wedge bonding is highly recommended as the loop height will be minimized. The RF input and output require a double bond wire as shown. The semiconductor is 7 um thick and should be handled by the sides of the die or with a custom collect. Do not make contact directly with the die surface as this will damage the monolithic circuitry. Handle with care. Assembly Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.

10 Applications Information Application Circuit Note: Drain voltage (Vdd) must be applied through a broadband bias tee or external bias network. External DC block is required on RF input. Biasing and Operation The CMD29 is biased with a positive drain supply and a negative gate supply. Performance is optimized when the drain voltage is set to +1 V. The nominal gate voltage is -.9 V. Turn ON procedure: 1.Apply gate voltage V gg and set to -2 V 2.Apply drain voltage V dd and set to +1 V 3.Increase Vgg (less negative) to achieve a drain current of ma Turn OFF procedure: 1.Turn off drain voltage V dd 2.Turn off gate voltage V gg RF power can be applied at any time.