6-18 GHz Low Phase Noise Amplifier

Transcription

1 -1 GHz Low Phase Noise Amplifier Features Functional Block Diagram Wide bandwidth Low phase noise Low current consumption Pb-free RoHs compliant 4x4 mm SMT package Description The CMD24C4 is a wideband GaAs MMIC low phase noise amplifier housed in a leadless surface mount package that is ideally suited for military, space and communications systems. At GHz the device delivers 1 db of gain, a saturated output power of +21 dbm and a noise figure of 4. db. Also with an input signal of GHz the amplifier provides low phase noise performance of -1 dbc/hz at khz offset. The CMD24C4 is a ohm matched design which eliminates the need for RF port matching. Electrical Performance V dd =. V, V gg = 3. V, T A = 2 o C, F = GHz Parameter Min Typ Max Units Frequency Range GHz Gain 1 db Input Return Loss db Output Return Loss db Noise Figure 4. db Output P1dB 1 dbm Saturated Output Power 21 dbm Phase khz Offset -1 dbc/hz Supply Current 7 ma

2 -1 GHz Low Phase Noise Amplifier Specifications Absolute Maximum Ratings Parameter Rating Drain Voltage, Vdd. V Gate Voltage, Vgg. V RF Input Power +17 dbm Channel Temperature, Tch C Power Dissipation, Pdiss 2 mw Thermal Resistance C/W Operating Temperature -4 to C Recommended Operating Conditions Parameter Min Typ Max Units Vdd V Idd 7 ma Vgg V Electrical performance is measured at specific test conditions. Electrical specifications are not guaranteed over all recommended operating conditions. Storage Temperature - to C Operation of this device outside the maximum ratings may cause permanent damage. Electrical Specifications V dd =. V, V gg = 3. V, T A = 2 o C Parameter Min Typ Max Min Typ Max Units Frequency Range 1 GHz Gain db Noise Figure db Input Return Loss db Output Return Loss 13 db Output P1dB dbm Saturated Output Power 21 dbm Output IP dbm Phase khz Offset -1-1 dbc/hz Supply Current ma

3 Response/dB Noise Figure/dB Response/dB Noise Figure/dB -1 GHz Low Phase Noise Amplifier Typical Performance Broadband Performance, V dd =. V, V gg = 3. V, I dd = 7 ma, T A = 2 o C 1 S11 S22 S21 NF Narrow-band Performance, V dd =. V, V gg = 3. V, I dd = 7 ma, T A = 2 o C 1 S11 S22 S21 NF

4 Gain/dB -1 GHz Low Phase Noise Amplifier Typical Performance Additive Phase Psat, V dd =. V, V gg = 3. V, T A = 2 o C Phase Noise/dBc/Hz Gain vs. Temperature, V dd =. V, V gg = 3. V Offset/kHz C 13 +C -4C

5 P1dB/dBm Response/dBm -1 GHz Low Phase Noise Amplifier Typical Performance Output Power, V dd =. V, V gg = 3. V, T A = 2 o C 2 24 P1dB Psat P1dB vs. Temperature, V dd =. V, V gg = 3. V C 23 +C 22-4C

6 Noise Figure/dB Output IP3/dBm -1 GHz Low Phase Noise Amplifier Typical Performance Output IP3 vs. Temperature, V dd =. V, V gg = 3. V C 23 +C 22-4C Noise Figure vs. Temperature, V dd =. V, V gg = 3. V 13 +2C +C -4C

7 -1 GHz Low Phase Noise Amplifier Mechanical Information Package Information and Dimensions Recommended PCB Land Pattern

8 RF in 1 9 pf.1 uf Vgg.1 uf pf uf Vdd 4 db 4 deg Port B RF in 1 4 RF out Pin Description 3 bit.1 uf 7-1 GHz Low Phase Noise Amplifier pf Vgg.1 uf 4 db 4 deg Port A Pin Diagram Vctl Vdd Vdd Vgg Drain Vdd1, 2 Vdd1, 2 Vdd1, 2, 3 Vdd1, 2A, 2B RF in Gate 4x7um Source RF in1, 2 RF LO Vctl Vctl Vgg1, 2, 3 Vgg1, 2 LO IF1, IF2 Functional Description RF out Vdd1A, 1B, 2 Pad Function Description Schematic 1, 2, -, -, 1-22, 24 3,,, 17 and die paddle RF IN1 RF IN2 RF ina N/C RF inb Ground RF IN RF OUT1 RF OUT2 No connection required. These pins may RF IN1 RF IN2 be connected to RF/DC ground. RF OUT1 Connect to RF / DC RF ground OUT2 RF in GND RF out IF RF OUT 4 RF in DC coupled and ohm matched RF in DELAY 1,2,3,4 IN DELAY 1,2,3,4 OUT 23 Vdd Power supply voltage Decoupling and bypass caps required Vdd 1 RF out DC blocked and ohm matched RF out 9 Vgg Power supply voltage Decoupling and bypass caps required Vgg

9 -1 GHz Low Phase Noise Amplifier Applications Information Application Circuit Biasing and Operation The CMD24C4 is biased with a positive drain supply and positive gate supply. Performance is optimized when the drain voltage is set to +. V. The recommended gate voltage is +3. V. Turn ON procedure: 1.Apply drain voltage V dd and set to + V 2.Apply gate voltage V gg and set to +3 V Turn OFF procedure: 1.Turn off gate voltage V gg 2.Turn off drain voltage V dd RF power can be applied at any time. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.

10 -1 GHz Low Phase Noise Amplifier Applications Information Evaluation Board The circuit board shown has been developed for optimized assembly at. A sufficient number of via holes should be used to connect the top and bottom ground planes. As surface mount processes vary, careful process development is recommended. Bill of Material Designator Value Description J1, J2 SMA End Launch Connector P1, P2 Pin Header C1, C2.33 µf Capacitor, Tantalum C3, C4 pf Capacitor, 3 C, C pf Capacitor, 42 U1 PCB CMD24C4 Driver Amplifier 41 Evaluation PCB Please note, all information contained in this data sheet is subject to change without notice.