CMD275P4 DC-26.5 GHz Low Phase Noise Amplifier

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1 CMD27P4 Features Functional Block Diagram Ultra wideband performance Low phase noise Low current consumption Pb-free RoHs compliant 4x4 mm QFN package Description The CMD27P4 is a wideband GaAs MMIC low phase noise amplifier housed in a leadless surface mount package that is ideally suited for military, space and communications systems. At GHz the device delivers db of gain, a saturated output power of +. dbm and a noise figure of. db. Also with an input signal of GHz the amplifier provides low phase noise performance of - dbc/hz at khz offset. The CMD27P4 is a 0 ohm matched design which eliminates the need for RF port matching. Electrical Performance V dd =.0 V, V gg = 3.0 V, T A = 2 o C, F = GHz Parameter Min Typ Max Units Frequency Range DC 26. GHz Gain db Input Return Loss 18 db Output Return Loss db Noise Figure. db Output P1dB 18 dbm Saturated Output Power. dbm Phase khz Offset - dbc/hz Supply Current 74 ma

2 CMD27P4 Specifications Absolute Maximum Ratings Parameter Rating Drain Voltage, 7. V Gate Voltage, 3. V RF Input Power + dbm Channel Temperature, Tch 10 C Power Dissipation, Pdiss 49 mw Thermal Resistance 131 C/W Operating Temperature -40 to 8 C Recommended Operating Conditions Parameter Min Typ Max Units V Idd 74 ma V Igg 3.7 ma Electrical performance is measured at specific test conditions. Electrical specifications are not guaranteed over all recommended operating conditions. Storage Temperature - to 10 C Exceeding any one or combination of the maximum ratings may cause permanent damage to the device. Electrical Specifications V dd =.0 V, V gg = 3.0 V, T A = 2 o C Parameter Min Typ Max Min Typ Max Min Typ Max Units Frequency Range DC 26 GHz Gain db Noise Figure 6 6 db Input Return Loss 13 1 db Output Return Loss db Output P1dB dbm Saturated Output Power dbm Output IP dbm Phase khz Offset dbc/hz Supply Current ma

3 Response/dB Noise Figure/dB Response/dB Noise Figure/dB CMD27P4 Typical Performance Broadband Performance, V dd =.0 V, V gg = 3.0 V, I dd = 74 ma, T A = 2 o C 1 14 S11 S21 S22 NF Narrow-band Performance, V dd =.0 V, V gg = 3.0 V, I dd = 74 ma, T A = 2 o C 1 14 S11 S21 S22 NF

4 Gain/dB CMD27P4 Typical Performance Additive Phase Psat, V dd =.0 V, V gg = 3.0 V, T A = 2 o C Phase Noise/dBc/Hz Gain vs. Temperature, V dd =.0 V, V gg = 3.0 V Offset/kHz C +8C -40C

5 Psat/dBm P1dB/dBm CMD27P4 Typical Performance P1dB vs. Temperature, V dd =.0 V, V gg = 3.0 V C +8C -40C Psat vs. Temperature, V dd =.0 V, V gg = 3.0 V C +8C -40C

6 Noise Figure/dB Output IP3/dBm CMD27P4 Typical Performance Output IP3 vs. Temperature, V dd =.0 V, V gg = 3.0 V C +8C -40C Noise Figure vs. Temperature, V dd =.0 V, V gg = 3.0 V C +8C -40C

7 aaa CMD27P4 Mechanical Information Package Information and Dimensions aaa bbb M SYMBOLS DIMENSIONS IN MILLIMETERS MIN NOM MAX A A A3 0.2REF. b D D1 E E1 2.0 e SC L aaa bbb ccc M Recommended PCB Land Pattern

8 uf 4 4 bit 4 db Pin Description RF out 4 deg CMD27P4 Port B (+) uf 3 bit Pin Diagram 4 db 4 deg Port A (-) 0.01 uf , 2 GB ACG3 Vctl ACG4 GND GB Vctl GB1 GB2 GB3 RF out & 1, 2, 3 1, 2A, 2B RF out LO RF RF Ven Vdet Functional Description 1, 2 RF out1, 2 IF A, B LO RF outa, B Pin Vctl Vctl Function Description Vee Schematic 2 IF1, IF2 1, 2, 6-8, 12-14, 18-21, 24 N/C RF out Vctrl1 Vctrl2 No connection required. These pins may be connected to RF/DC ground 1, 2 1A, 1B, 2 1, 2A, 2B 4 RF out 0 ohm matched input (+) 1, 2, 3 Vz =.1 Izt = 0u COMPE DEVICE CD4689 T1 T2 4 deg Port B 22, 23, 1 IF RF Low frequency termination. Attach bypass 1A, 1B, 2 capacitors per application circuit RF out RF out & 1 TTL or CMOS O 4 deg Port A RF out & Power supply voltage and 0 ohm matched (-) output ACG3 GND, 11 ACG4, 3 4 1, 2 9 Low frequency termination. Attach bypass capacitors per application circuit GB Power supply voltage Decoupling and bypass caps required ACG3 ACG4 400 ohm To Gates ohm ACG4 V dd RFout GB 3,, 1, 17 and die paddle Vctl Ground GB1 GB2 GB3 Connect to RF / DC ground RF out & GND RF out LO RF RF Ven Vdet Vctl RF out1, 2 A, B IF RF outa, B Vee 2 RF out & A, B Vctrl1 Vctrl2 Vss

9 CMD27P4 Applications Information Application Circuit Biasing and Operation The CMD27P4 is biased with a positive drain supply and positive gate supply. Performance is optimized when the drain voltage is set to +.0 V. The recommended gate voltage is +3.0 V. The preferred biasing procedure is as follows: Turn ON procedure: Apply the drain voltage and set it to +V then apply gate voltage and set it to +3V. Turn OFF procedure: Turn off the gate voltage and then turn off the drain voltage. The preferred biasing procedure has been proven to be robust, and should be used whenever possible. However, the CMD27P4 does allow for simultaneous biasing (applying and at the same time), and the use of a single voltage supply. Refer to Application Note 3: Amplifier Biasing Techniques for instructions on how to implement a single supply biasing scheme. For either approach, RF power can be applied at any time.

10 CMD27P4 Applications Information Evaluation Board Bill of Material Designator Value Description J1, J2 SMA End Launch Connector P2 6 Pin DC Header C1-C µf Capacitor, Tantalum C4-C6 00 pf Capacitor, 0603 C7 0 pf Capacitor, 0402 U1 PCB CMD27P4 Driver Amplifier 181 Evaluation PCB GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Please note, all information contained in this data sheet is subject to change without notice.