2 GHz to 28 GHz, GaAs phemt MMIC Low Noise Amplifier HMC7950
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1 Data Sheet FEATURES Output power for db compression (PdB): 6 dbm typical Saturated output power (PSAT): 9. dbm typical Gain: db typical Noise figure:. db typical Output third-order intercept (IP3): 6 dbm typical Supply voltage: V at 6 ma Ω matched input/output APPLICATIONS Test instrumentation Military and space GENERAL DESCRIPTION The HMC79 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (phemt), monolithic microwave integrated circuit (MMIC). The HMC79 is a wideband low noise amplifier that operates between GHz and GHz. The amplifier typically provides db of gain,. db of noise figure, 6 dbm of output IP3, and 6 dbm of output power for db gain compression, requiring 6 ma from a V supply. The HMC79 GHz to GHz, GaAs phemt MMIC Low Noise Amplifier HMC79 V DD 3 FUNCTIONAL BLOCK DIAGRAM V GG 6 HMC79 RFIN RFOUT 6 Figure. PACKAGE BASE is self biased with only a single positive supply needed to achieve a drain current, IDD, of 6 ma. The HMC79 also has a gain control option, VGG. The HMC79 amplifier input/outputs are internally matched to Ω and dc blocked. It comes in a 6 mm 6 mm, 6-terminal LCC SMT ceramic package that is easy to handle and assemble Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 96, Norwood, MA 6-96, U.S.A. Tel: Analog Devices, Inc. All rights reserved. Technical Support
2 HMC79 TABLE OF CONTENTS Features... Applications... Functional Block Diagram... General Description... Revision History... Specifications... 3 GHz to GHz Frequency Range... 3 GHz to GHz Frequency Range... 3 GHz to GHz Frequency Range... DC Specifications... Absolute Maximum Ratings... Thermal Resistance... Data Sheet ESD Caution... Pin Configuration and Function Descriptions...6 Interface Schematics...6 Typical Performance Characteristics...7 Theory of Operation... Applications Information... 3 Evaluation Board... Evaluation Board Schematic... Outline Dimensions... 6 Ordering Guide... 6 REVISION HISTORY 9/7 Rev. to Rev. A Added Figure 37; Renumbered Sequentially... /7 Revision : Initial Version Rev. A Page of 6
3 Data Sheet HMC79 SPECIFICATIONS GHz TO GHz FREQUENCY RANGE TA = C, VDD = V, VGG = open, unless otherwise stated. When using VGG, it is recommended to limit VGG from V to +.6 V. POUT is output power. Table. Parameter Symbol Test Conditions/Comments Min Typ Max Unit FREQUENCY RANGE GHz GAIN 3.. db Gain Variation Over Temperature. db/ C RETURN LOSS Input db Output 3 db OUTPUT Output Power for db Compression PdB 3 6. dbm Saturated Output Power PSAT. dbm Output Third-Order Intercept IP3 Measurement taken at POUT/tone = dbm 6. dbm NOISE FIGURE NF 3.. db GHz TO GHz FREQUENCY RANGE TA = C, VDD = V, VGG = open, unless otherwise stated. When using VGG, it is recommended to limit VGG from V to +.6 V. POUT is output power. Table. Parameter Symbol Test Conditions/Comments Min Typ Max Unit FREQUENCY RANGE GHz GAIN 3.3 db Gain Variation Over Temperature.7 db/ C RETURN LOSS Input db Output db OUTPUT Output Power for db Compression PdB 3 6 dbm Saturated Output Power PSAT 9. dbm Output Third-Order Intercept IP3 Measurement taken at POUT/tone = dbm 6 dbm NOISE FIGURE NF. 3. db Rev. A Page 3 of 6
4 HMC79 Data Sheet GHz TO GHz FREQUENCY RANGE TA = C, VDD = V, VGG = open, unless otherwise stated. When using VGG, it is recommended to limit VGG from V to +.6 V. POUT is output power. Table 3. Parameter Symbol Test Conditions/Comments Min Typ Max Unit FREQUENCY RANGE GHz GAIN 3 6. db Gain Variation over Temperature. db/ C RETURN LOSS Input 9 db Output 6 db OUTPUT Output Power for db Compression PdB. dbm Saturated Output Power PSAT 7 dbm Output Third-Order Intercept IP3 Measurement taken at POUT/tone = dbm dbm NOISE FIGURE NF. db DC SPECIFICATIONS Table. Parameter Symbol Test Conditions/Comments Min Typ Max Unit SUPPLY CURRENT Total Supply Current IDD 6 ma Total Supply Current vs. VDD IDD = ma 3 V IDD = 6 ma V IDD = 6 ma V IDD = 66 ma 6 V IDD = 69 ma 7 V SUPPLY VOLTAGE VDD 3 7 V VGG PIN VGG Normal condition is VGG = open..6 V Rev. A Page of 6
5 Data Sheet ABSOLUTE MAXIMUM RATINGS Table. Parameter Rating Supply Voltage (VDD) V Second Gate Bias Voltage (VGG). V to +3 V Radio Frequency Input Power (RFIN) dbm Channel Temperature 7 C Continuous Power Dissipation (PDISS),. W TA = C (Derate 7. mw/ C Above C) Maximum Peak Reflow Temperature (MSL3) 6 C Storage Temperature Range 6 C to + C Operating Temperature Range C to ESD Sensitivity, Human Body Model (HBM) V (Class A) See the Ordering Guide section for more information. Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. HMC79 THERMAL RESISTANCE Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Careful attention to PCB thermal design is required. θjc is the junction to case thermal resistance. Table 6. Thermal Resistance Package Type θjc Unit EP-6- C/W Channel to ground pad. See JEDEC Standard JESD- for additional information on optimizing the thermal impedance ESD CAUTION Rev. A Page of 6
6 HMC79 Data Sheet PIN CONFIGURATION AND FUNCTION DESCRIPTIONS V DD RFOUT 3 HMC79 TOP VIEW (Not to Scale) 9 Figure. Pin Configuration Table 7. Pin Function Descriptions Pin Mnemonic Description,,, 9,,,, 6 No Internal Connection. Note that data shown herein was measured with these pins externally connected to RF/dc ground. See Figure 3 for the interface schematic. 3 VDD Power Supply Voltage for the Amplifier. Connect a dc bias to provide drain current (IDD). See Figure for the interface schematic. VGG Gain Control. This pin is dc-coupled and accomplishes gain control by reducing the internal voltage and becoming more negative. See Figure for the interface schematic., 7, 3, These pins must be connected to RF/dc ground. See Figure 3 for the interface schematic. 6 RFIN Radio Frequency (RF) Input. This pin is ac-coupled, but has a large resistor to for ESD protection, and matched to Ω. See Figure 6 for the interface schematic. RFOUT RF Output. This pin is ac-coupled, but has a large resistor to for ESD protection, and matched to Ω. See Figure 7 for the interface schematic. EPAD () Exposed Pad (Ground). The exposed pad must be connected to RF/dc ground. See Figure 3 for the interface schematic. INTERFACE SCHEMATICS V GG RFIN NOTES. = NO INTERNAL CONNECTION. NOTE THAT DATA SHOWN HEREIN WAS MEASURED WITH THESE PINS EXTERNALLY CONNECTED TO RF/DC GROUND.. EXPOSED PAD. THE EXPOSED PAD MUST BE CONNECTED TO RF/DC GROUND. - Figure 3. Interface Schematic V DD -7 RFIN -3 Figure 6. RFIN Interface Schematic - Figure. VDD Interface Schematic V GG RFOUT Figure 7. RFOUT Interface Schematic -6 - Figure. VGG Interface Schematic Rev. A Page 6 of 6
7 Data Sheet HMC79 TYPICAL PERFORMANCE CHARACTERISTICS RESPONSE (db) GAIN (db) 6 C + C S S S Figure. Response (Gain and Return Loss) vs. Frequency Figure. Gain vs. Frequency at Various Temperatures C + C C + C RETURN LOSS (db) RETURN LOSS (db) Figure 9. Input Return Loss vs. Frequency at Various Temperatures Figure. Output Return Loss vs. Frequency at Various Temperatures - 6 C + C 7 6 C + C NOISE FIGURE (db) 3 PdB (dbm) Figure. Noise Figure vs. Frequency at Various Temperatures Figure 3. PdB vs. Frequency at Various Temperatures -3 Rev. A Page 7 of 6
8 HMC79 Data Sheet C + C 9 7 V V 6V 9 6 P SAT (dbm) 7 6 PdB (dbm) Figure. PSAT vs. Frequency at Various Temperatures Figure 7. PdB vs. Frequency at Various Supply Voltages 3 V V 6V 3 C + C P SAT (dbm) IP3 (dbm) FREQUENCY (dbm) - Figure. PSAT vs. Frequency at Various Supply Voltages Figure. Output IP3 vs. Frequency at Various Temperatures, POUT/Tone = dbm 3 V V 6V 6 GHz GHz 6GHz GHz GHz 6 IP3 (dbm) IMD3 (dbc) FREQUENCY (dbm) Figure 6. Output IP3 vs. Frequency at Various Supply Voltages POUT/Tone = dbm P OUT /TONE (dbm) Figure 9. Output Third-Order Intermodulation Distortion (IMD3) vs. POUT/Tone at Various Frequencies, VDD = V -9 Rev. A Page of 6
9 Data Sheet HMC79 IMD3 (dbc) 6 3 GHz GHz 6GHz GHz GHz POWER DISSIPATION (W) GHz GHz 6GHz GHz GHz I DD AT 6GHz I DD (ma) P OUT /TONE (dbm) Figure. Output IMD3 vs. POUT/Tone at Various Frequencies, VDD = V INPUT POWER (dbm) Figure 3. Power Dissipation and IDD vs. Input Power at Various Frequencies, 6 GHz, TA = C -3 6 GHz GHz 6GHz GHz GHz 76 7 GHz GHz 6GHz GHz GHz IMD3 (dbc) I DD (ma) P OUT /TONE (dbm) Figure. Output IMD3 vs. POUT/Tone at Various Frequencies, VDD = 6 V INPUT POWER (dbm) Figure. IDD vs. Input Power at Various Frequencies - C + C I GG I DD 7 6 REVERSE ISOLATION (db) 3 I GG (ma) 3 6 I DD (ma) Figure. Reverse Isolation vs. Frequency at Various Temperatures V GG (V) Figure. IGG and IDD vs. VGG at GHz, Input Power (PIN) = dbm - Rev. A Page 9 of 6
10 HMC79 Data Sheet GAIN (db) V V.6V.V 3.V.V V.6V V.V.V.V.6V 3-6 PdB (dbm).v.v.v.v.6v.v.v.6v.v V V.V Figure 6. Gain vs. Frequency at Various VGG Voltage Levels Figure 9. PdB vs. Frequency at Various VGG Voltage Levels V.6V.V.V V.V.V V.V V.6V.V.6V 6.V.V.6V.V.V V.V.V.V.6V V.V RETURN LOSS (db) P SAT (dbm) 6 3 Figure 7. Input Return Loss vs. Frequency at Various VGG Voltage Levels Figure 3. PSAT vs. Frequency at Various VGG Voltage Levels -3 RETURN LOSS (db) V.6V.V.V V.V.V V.V V.6V.V.6V IP3 (dbm) 3 3 Figure. Output Return Loss vs. Frequency at Various VGG Voltage Levels -.V.V.V.V.6V.6V.V V V.V.V Figure 3. Output IP3 vs. Frequency at Various VGG Voltage Levels, POUT/Tone = dbm -3 Rev. A Page of 6
11 Data Sheet HMC79 GAIN (db) SECOND HARMO (dbc) V GG (V) C + C Figure 3. Gain vs. VGG at GHz Figure 3. Second Harmonic vs. Frequency at Various Temperatures, POUT = dbm IP3 (dbm) 6 6 SECOND HARMO (dbc) 3 3 dbm dbm V GG (V) Figure 33. Output IP3 vs. VGG at GHz Figure 36. Second Harmonic vs. Frequency at Various Output Powers C + C IP (dbm) PHASE NOISE (dbc/hz) k k k M OFFSET FREQUENCY (Hz) -37 Figure 3. Output IP vs. Frequency at Various Temperatures, POUT/Tone = dbm Figure 37. Additive Phase Noise vs. Offset Frequency, RF Frequency = GHz, RF Input Power =. dbm (PdB) Rev. A Page of 6
12 HMC79 THEORY OF OPERATION The HMC79 is a GaAs, phemt, MMIC low noise amplifier. Its basic architecture is that of a single-supply, biased cascode distributed amplifier with an integrated RF choke for the drain. The cascode distributed architecture uses a fundamental cell consisting of a stack of two field effect transistors (FETs) with the source of the upper FET connected to the drain of the lower FET. The fundamental cell is then duplicated several times, with a transmission line feeding the RFIN signal to the gates of the lower FETs and a separate transmission line interconnecting the drains of the upper FETs and routing the amplified signal to the RFOUT pin. Additional circuit design techniques around each cell optimize the overall performance for broadband operation. The major benefit of this architecture is that high performance is maintained across a bandwidth far greater than a single instance of the fundamental cell can provide. A simplified schematic of this architecture is shown in Figure 3. Data Sheet Although the gate bias voltages of the upper FETs are set internally by a resistive voltage divider connected to VDD, the VGG pin provides the user with an optional means of changing the gate bias of the upper FETs. Application of a voltage to VGG allows the user to change the voltage output by the resistive divider, altering the gate bias of the upper FETs and thus changing the gain. Application of VGG voltages across the range of. V to +.6 V affects gain changes of approximately 3 db, depending on the frequency. Increasing the voltage applied to VGG increases the gain, whereas decreasing the voltage decreases the gain. For VDD =. V (nominal), the resulting VGG open circuit voltage is approximately. V. V DD TRANSMISSION LINE RFOUT V GG RFIN TRANSMISSION LINE -36 Figure 3. Architecture and Simplified Schematic Rev. A Page of 6
13 Data Sheet APPLICATIONS INFORMATION Capacitive bypassing is recommended for VDD, as shown in the typical application circuit in Figure 39. Gain control is possible through the application of a dc voltage to VGG. If gain control is used, capacitive bypassing of VGG is recommended as shown in the typical application circuit. If gain control is not used, VGG can be either left open or capacitively bypassed as shown in Figure 39. The recommended bias sequence during power-up is as follows:. Set VDD to. V (this results in an IDD near its specified typical value).. If the gain control function is to be used, apply a voltage within the range of. V to +.6 V to VGG until the desired gain setting is achieved. 3. Apply the RF input signal. HMC79 The recommended bias sequence during power-down is as follows:. Turn off the RF input signal.. Remove the VGG voltage, or set it to V. 3. Set VDD to V. Power-up and power-down sequences can differ from the ones described, although care must always be taken to ensure adherence to the values shown in the Absolute Maximum Ratings section. Unless otherwise noted, all measurements and data shown were taken using the typical application circuit as configured on the HMC79 evaluation board. The bias conditions shown in the Specifications section are recommended to optimize the overall performance. Operation using other bias conditions may result in performance that differs from the data shown in this data sheet. V DD.7µF nf pf 3 V GG +.7µF nf pf 6 RFIN 6 RFOUT PACKAGE BASE -37 Figure 39. Typical Application Circuit Rev. A Page 3 of 6
14 HMC79 EVALUATION BOARD The HMC79 evaluation board is a -layer board fabricated using Rogers 3 and using best practices for high frequency RF design. The RF input and RF output traces have a Ω characteristic impedance. The evaluation board and populated components are designed to operate over the ambient temperature range of C to. For the proper bias sequence, see the Applications Information section. The evaluation board schematic is shown in Figure. A fully populated and tested evaluation board, shown in Figure, is available from Analog Devices, Inc., upon request. RFIN C9-3 REV B J VGG C7 C C C VGG H79 C C3 C J3 VDD C6 U ANALOG DEVICES HMC79LS6 EVAL RFOUT Figure. Evaluation PCB Data Sheet -3 Table. Bill of Materials for Evaluation PCB EVHMC79LS6 Item Description RFIN, RFOUT PCB mount, K connector, SRI Part Number C, C7 pf capacitor, %, V, CG, package C3, C nf capacitor, %, 6 V, X7R, package C, C9.7 µf tantalum capacitor, %, V, 6 package U Amplifier, HMC79LS6 PCB Evaluation PCB; circuit board material: Rogers 3 VDD, VGG DC pins, Molex Part Number 779- C, C, C6, J3, J, VGG Do not install (DNI) Rev. A Page of 6
15 Data Sheet HMC79 EVALUATION BOARD SCHEMATIC VGG 3 VDD 3 C9.7µF C pf C3 nf + C.7µF C nf C7 pf 3 V GG V DD 6 RFIN 6 RFIN HMC79LS6 RFOUT RFOUT 7 EPAD 3 9 VGG DNI 3 C DNI C DNI + C6 DNI J3 DNI THRU_CAL J DNI -39 Figure. Evaluation Board Schematic Rev. A Page of 6
16 HMC79 Data Sheet OUTLINE DIMENSIONS PIN INDICATOR SQ BSC SQ Figure. 6-Terminal Ceramic Leadless Chip Carrier with Heat Sink [LCC_HS] (EP-6-) Dimensions shown in millimeters ORDERING GUIDE Model Temperature Range MSL Rating Lead Finish Package Description Package Option Branding 3 HMC79LS6 C to MSL3 Au 6-Terminal LCC_HS EP-6- HMC79LS6TR C to MSL3 Au 6-Terminal LCC_HS EP-6- EVHMC79LS6 PKG-93. BSC TOP VIEW.9 BSC SIDE VIEW..37. MAX COPLANARITY. BOTTOM VIEW Evaluation PCB The HMC79LS6 and HMC79LS6TR are RoHS compliant parts, made of low stress injection molded plastic. See the Absolute Maximum Ratings section for further information on the moisture sensitivity level (MSL) rating. 3 XXXX is the four-digit lot number FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET B H79 XXXX H79 XXXX 7 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D--9/7(A) Rev. A Page 6 of 6
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Data Sheet FEATURES Fixed gain of 17.4 db Broadband operation from 3 MHz to 6 GHz Input/output internally matched to Ω Integrated bias control circuit OIP3 of 34.9 dbm at 9 MHz P1dB of 17.6 dbm at 9 MHz
More informationFeatures. = +25 C, Vdd = +5V, Idd = 400mA [1]
v.61 Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Features Saturated Output Power:.5 dbm @ 21% PAE High Output IP3: 34.5 dbm High Gain:.5
More information6 GHz to 10 GHz, GaAs, MMIC, I/Q Mixer HMC520A
11 7 8 9 FEATURES Radio frequency (RF) range: 6 GHz to 1 GHz Local oscillator (LO) input frequency range: 6 GHz to 1 GHz Conversion loss: 8 db typical at 6 GHz to 1 GHz Image rejection: 23 dbc typical
More informationFeatures. Parameter* Min. Typ. Max. Units Frequency Range GHz Gain 2 5 db. Gain Variation over Temperature
v3.1 HMC59MSGE AMPLIFIER,. -.9 GHz Typical Applications The HMC59MSGE is ideal for: DTV Receivers Multi-Tuner Set Top Boxes PVRs & Home Gateways Functional Diagram Features Single-ended or Balanced Output
More informationFeatures. = +25 C, Vcc =5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max Units
v2.917 Typical Applications Features The is ideal for: Point-to-Point Radios Point-to-Multipoint Radios VSAT LO Driver for HMC Mixers Military EW & ECM Functional Diagram High Output IP3: +28 dbm Single
More informationFeatures. = +25 C, Vcc = 5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Units
v2.717 MMIC AMPLIFIER, 4 - GHz Typical Applications The is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications Functional
More information5.5 GHz to 14 GHz, GaAs MMIC Fundamental Mixer HMC558A. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION
FEATURES Conversion loss: 7.5 db typical at 5.5 GHz to 1 GHz Local oscillator (LO) to radio frequency (RF) isolation: 45 db typical at 5.5 GHz to 1 GHz LO to intermediate frequency (IF) isolation: 45 db
More informationGaAs, MMIC Fundamental Mixer, 2.5 GHz to 7.0 GHz HMC557A
FEATURES Conversion loss: db LO to RF isolation: db LO to IF isolation: 3 db Input third-order intercept (IP3): 1 dbm Input second-order intercept (IP2): dbm LO port return loss: dbm RF port return loss:
More information50 MHz to 4.0 GHz RF/IF Gain Block ADL5602
Data Sheet FEATURES Fixed gain of 20 db Operation from 50 MHz to 4.0 GHz Highest dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 42.0 dbm at 2.0
More information4 GHz to 8.5 GHz, GaAs, MMIC, I/Q Mixer HMC525ALC4
Data Sheet FEATURES Passive: no dc bias required Conversion loss: 8 db (typical) Input IP3: 2 dbm (typical) LO to RF isolation: 47 db (typical) IF frequency range: dc to 3. GHz RoHS compliant, 24-terminal,
More informationFeatures. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain
Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Marine Radar Military EW & ECM Functional Diagram Features High Saturated Output Power: dbm @ % PAE
More informationFeatures. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 70 ma
v2.61 Typical Applications This is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram Features Low Noise Figure: 2.5 db Gain: 13 db P1dB
More information81 GHz to 86 GHz, E-Band Power Amplifier With Power Detector HMC8142
Data Sheet 8 GHz to 86 GHz, E-Band Power Amplifier With Power Detector FEATURES GENERAL DESCRIPTION Gain: db typical The is an integrated E-band gallium arsenide (GaAs), Output power for db compression
More informationFeatures. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 45 ma
v2.61 Typical Applications This is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram Features Low Noise Figure: 2. db High Gain: 22 db
More informationHMC486LP5 / 486LP5E LINEAR & POWER AMPLIFIERS - SMT. SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 7-9 GHz. Typical Applications.
v2. Typical Applications The HMC486LP5(E) is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment and Sensors Military End-Use Features Saturated Power: +33 dbm @ 2% PAE Output IP3:
More informationFeatures. = +25 C, Vdd= +12V, Vgg2= +5V, Idd= 400 ma*
Typical Applications The HMC637LP5(E) wideband PA is ideal for: Features P1dB Output Power: +29 dbm Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
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More informationHMC618ALP3E AMPLIFIERS - LOW NOISE - SMT. GaAs SMT phemt LOW NOISE AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram
7 Typical Applications The is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femto Cells Public Safety Radios Functional Diagram v. Electrical Specifications T A = + C, Rbias
More information10 W, Failsafe, GaAs, SPDT Switch 0.2 GHz to 2.7 GHz HMC546LP2E
FEATURES High input P.dB: 4 dbm Tx Low insertion loss:.4 db High input IP3: 67 dbm Positive control: V low control; 3 V to 8 V high control Failsafe operation: Tx is on when no dc power is applied APPLICATIONS
More informationHigh Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz HMC349AMS8G
Data Sheet High Isolation, Nonreflective, GaAs, SPDT Switch,1 MHz to 4 GHz FEATURES Nonreflective, 5 Ω design High isolation: 57 db to 2 GHz Low insertion loss:.9 db to 2 GHz High input linearity 1 db
More informationFeatures. = +25 C, Vcc = +5.0V. Vcc = +5V Parameter
Typical Applications Ideal as a Driver & Amplifier for: 2.2-2.7 GHz MMDS 3. GHz Wireless Local Loop - 6 GHz UNII & HiperLAN Functional Diagram Features P1dB Output Power: +14 dbm Output IP3: +27 dbm Gain:
More informationGain Control Range db
v1.112-12 GHz Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems X-Band Radar Test Equipment & Sensors Functional Diagram Features Wide Gain Control
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
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More information20 MHz to 6 GHz RF/IF Gain Block ADL5542
FEATURES Fixed gain of db Operation up to 6 GHz Input/output internally matched to Ω Integrated bias control circuit Output IP3 46 dbm at MHz 4 dbm at 9 MHz Output 1 db compression:.6 db at 9 MHz Noise
More informationHigh Isolation, Silicon SP4T, Nonreflective Switch, 9 khz to 12.0 GHz ADRF5040
RF4 RF3 7 8 9 1 11 12 21 2 19 RF2 High Isolation, Silicon SP4T, Nonreflective Switch, 9 khz to 12. GHz ADRF54 FEATURES FUNCTIONAL BLOCK DIAGRAM Nonreflective 5 Ω design Positive control range: V to 3.3
More informationParameter Min. Typ. Max. Units Frequency Range GHz
v.312 27-31. GHz Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems Ka-Band Radar & VSAT Test Equipment Functional Diagram Features Wide Gain Control
More informationFeatures. = +25 C, Vdd= 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz
Typical Applications The HMC62LP / HMC62LPE Wideband LNA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C 3 I Test Instrumentation Fiber Optics Functional Diagram Features
More informationHMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram
v2.14 Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems Ka-Band Radar Test Equipment Functional Diagram Features Wide Gain Control Range: 1 db Single
More informationFeatures. = +25 C, Vdd = +7V, Idd = 1340 ma [1]
Typical Applications The HMC591LP5 / HMC591LP5E is ideal for use as a power amplifi er for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Sensors Military End-Use Space Features Saturated
More informationDC to 1000 MHz IF Gain Block ADL5530
Data Sheet FEATURES Fixed gain of 16. db Operation up to MHz 37 dbm Output Third-Order Intercept (OIP3) 3 db noise figure Input/output internally matched to Ω Stable temperature and power supply 3 V or
More informationFeatures. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]
Typical Applications This is ideal for: Features Low Noise Figure: 1.8 db Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram High Gain: 19 db High
More informationHMC694LP4 / 694LP4E. Variable gain amplifiers - ANALOG - smt. GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6-17 GHz. Typical Applications
v2.1 Typical Applications The HMC694LP4(E) is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM X-Band Radar Test Equipment Features Wide Gain Control Range: 23 db Single Control Voltage
More informationFeatures. = +25 C, Vdd = 5V, Vgg1 = Vgg2 = Open
v3.117 HMC441LM1 Typical Applications The HMC441LM1 is a medium PA for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT LO Driver for HMC Mixers Military EW & ECM Functional Diagram Vgg1, Vgg2:
More informationNonreflective, Silicon SP4T Switch, 0.1 GHz to 6.0 GHz HMC7992
Nonreflective, Silicon SP4T Switch,.1 GHz to 6. GHz FEATURES Nonreflective, 5 Ω design High isolation: 45 db typical at 2 GHz Low insertion loss:.6 db at 2 GHz High power handling 33 dbm through path 27
More informationHMC1040LP3CE. Amplifiers - Low Noise - smt. GaAs phemt MMIC LOW NOISE AMPLIFIER, GHz. Features. Typical Applications. General Description
v.112 HMC14LP3CE AMPLIFIER, 24-43. GHz Typical Applications This HMC14LP3BE is ideal for: Point-to-Point Radios Test Instrumentation SatCom Transponders & VSAT Industrial Sensors EW & ECM Subsystems Functional
More information20 MHz to 500 MHz IF Gain Block ADL5531
Data Sheet FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at 190 MHz Output 1 db compression:
More information71 GHz to 76 GHz, 1 W E-Band Power Amplifier with Power Detector ADMV7710
Data Sheet FEATURES Gain: db typical Output power for db compression: dbm typical Saturated output power: 29 dbm typical Output third-order intercept: dbm typical Input return loss: 8 db typical Output
More information30 MHz to 6 GHz RF/IF Gain Block ADL5611
Preliminary Technical Data FEATURES Fixed gain of 22.1 db Broad operation from 30 MHz to 6 GHz High dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3
More informationFeatures. = +25 C, 50 Ohm system
HMC12ALC4 Typical Applications v7.617 ATTENUATOR, 5-3 GHz Features The HMC12ALC4 is ideal for: Point-to-Point Radio VSAT Radio Test Instrumentation Microwave Sensors Military, ECM & Radar Functional Diagram
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.51 HMC32LC Typical Applications
More information71 GHz to 76 GHz, 1 W E-Band Power Amplifier with Power Detector ADMV7710
FEATURES Gain: db typical Output power for db compression: dbm typical Saturated output power: 29 dbm typical Output third-order intercept: dbm typical Input return loss: 8 db typical Output return loss:
More informationHigh Isolation, Silicon SPDT, Nonreflective Switch, 0.1 GHz to 6.0 GHz HMC8038W
5 6 7 8 6 5 4 3 FEATURES Nonreflective, 50 Ω design High isolation: 60 db typical Low insertion loss: 0.8 db typical High power handling 34 dbm through path 29 dbm terminated path High linearity P0.dB:
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v1.14 AMPLIFIER, 18-4 GHz Typical
More information9.25 GHz to GHz MMIC VCO with Half Frequency Output HMC1162
9.5 GHz to 10.10 GHz MMIC VCO with Half Frequency Output HMC116 FEATURES FUTIONAL BLOCK DIAGRAM Dual output f OUT = 9.5 GHz to 10.10 GHz f OUT / = 4.65 GHz to 5.050 GHz Power output (P OUT ): 11 dbm (typical)
More information12.17 GHz to GHz MMIC VCO with Half Frequency Output HMC1167
9 0 3 4 5 6 9 7 6.7 GHz to 3.33 GHz MMIC VCO with Half Frequency Output FEATURES Dual output frequency range fout =.7 GHz to 3.330 GHz fout/ = 6.085 GHz to 6.665 GHz Output power (POUT): 0.5 dbm Single-sideband
More informationGaAs phemt MMIC Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049
Data Sheet GaAs phemt MMIC Low Noise Amplifier,. GHz to GHz HMC9 FEATURES FUNCTIONAL BLOCK DIAGRAM Low noise figure:.7 db High gain: 6 db PdB output power: dbm Supply voltage: 7 V at 7 ma Output IP: 7
More information11.41 GHz to GHz MMIC VCO with Half Frequency Output HMC1166
9 6 3 30 29 VTUNE 28 27 26.4 GHz to 2.62 GHz MMIC VCO with Half Frequency Output FEATURES Dual output frequency range fout =.4 GHz to 2.62 GHz fout/2 = 5.705 GHz to 6.3 GHz Output power (POUT): dbm Single-sideband
More information100 MHz to 30 GHz, Silicon SPDT Switch ADRF5020
FEATURES Ultrawideband frequency range: 1 MHz to 3 GHz Nonreflective 5 Ω design Low insertion loss:. db to 3 GHz High isolation: 6 db to 3 GHz High input linearity 1 db power compression (P1dB): 8 dbm
More information12.92 GHz to GHz MMIC VCO with Half Frequency Output HMC1169
Data Sheet 12.92 GHz to 14.07 GHz MMIC VCO with Half Frequency Output FEATURES Dual output frequency range fout = 12.92 GHz to 14.07 GHz fout/2 = 6.46 GHz to 7.035 GHz Output power (POUT): 11.5 dbm SSB
More informationFeatures. = +25 C, Vdd= 8V, Idd= 75 ma*
HMC46LC5 Typical Applications v3.11 AMPLIFIER, DC - 2 GHz Features The HMC46LC5 is ideal for: Noise Figure: 2.5 db @ 1 GHz Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation
More informationFeatures. = +25 C, Vdd = +5V, 5 dbm Drive Level
v1.4 Typical Applications The HMC561LP3E are suitable for: Clock Generation Applications: SONET OC-192 & SDH STM-64 Point-to-Point & VSAT Radios Test Instrumentation Military & Space Functional Diagram
More informationFeatures. DC GHz GHz GHz DC GHz GHz GHz GHz DC - 4 GHz GHz Supply Current (Icq) ma
HMC311ST9 / 311ST9E v.17 MMIC AMPLIFIER, DC - GHz Typical Applications The HMC311ST9(E) is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV & Cable Modem Microwave Radio Functional Diagram Features
More informationParameter Frequency Min. Typ. Max. Units GHz GHz Attenuation Range GHz 31.5 db
v.37. db LSB GaAs MMIC 6-BIT DIGITAL POSITIVE CONTROL ATTENUATOR,. - 8. GHz Typical Applications Features ATTENUATORS - SMT The HMCALP3E is ideal for: WLAN & Point-to-Multi-Point Fiber Optics & Broadband
More information20 MHz to 500 MHz IF Gain Block ADL5531
20 MHz to 500 MHz IF Gain Block ADL5531 FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at
More informationFeatures. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz GHz. Attenuation Range GHz 15.
v.6.5 LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR,. - 33 GHz Typical Applications Features The is ideal for: Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar & ECM Space Applications
More information71 GHz to 76 GHz, E-Band Variable Gain Amplifier HMC8120
Data Sheet FEATURES Gain: 22 db typical Wide gain control range: 1 db typical Output third-order intercept (OIP3): 3 dbm typical Output power for 1 db compression (P1dB): 21 dbm typical Saturated output
More informationFeatures. Noise Figure db Supply Current (Idd) ma Supply Voltage (Vdd) V
v2.418 Typical Applications The HMC797A is ideal for: Test Instrumentation Military & Space Fiber Optics Functional Diagram Features High P1dB Output Power: +29 dbm High Psat Output Power: +31 dbm High
More informationHMC662LP3E POWER DETECTORS - SMT. 54 db, LOGARITHMIC DETECTOR, 8-30 GHz. Typical Applications. Features. Functional Diagram. General Description
Typical Applications The is ideal for: Point-to-Point Microwave Radio VSAT Wideband Power Monitoring Receiver Signal Strength Indication (RSSI) Test & Measurement Functional Diagram Features Wide Input
More information0.2 GHz to 8 GHz, GaAs, HBT MMIC, Divide by 8 Prescaler HMC434
Data Sheet.2 GHz to 8 GHz, GaAs, HBT MMIC, Divide by 8 Prescaler FEATURES Ultralow SSB phase noise: 15 dbc/hz typical Single-ended input/outputs Output power: 2 dbm typical Single supply operation: 3 V
More informationFeatures. = +25 C, Vdd =+28V, Idd = 850 ma [1]
v1.413 HMC87F POWER AMPLIFIER, 2 - GHz Typical Applications The HMC86F is ideal for Test Instrumentation General Communications Radar Functional Diagram Features High Psat: +38. dbm Power Gain at Psat:
More information