GaAs, MMIC Fundamental Mixer, 2.5 GHz to 7.0 GHz HMC557A
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- Joel Marsh
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1 FEATURES Conversion loss: db LO to RF isolation: db LO to IF isolation: 3 db Input third-order intercept (IP3): 1 dbm Input second-order intercept (IP2): dbm LO port return loss: dbm RF port return loss: 1 dbm Passive double balanced topology Wide IF bandwidth: dc to 3 GHz 24-terminal ceramic leadless chip carrier package APPLICATIONS WiMAX and fixed wireless Point to point radios Point to multipoint radios Test equipment and sensors Military end use GENERAL DESCRIPTION The HMC7A is a general-purpose, double balanced mixer in a 24-terminal, ceramic leadless chip carrier, RoHS-compliant package. The device can be used as an upconverter or downconverter from 2. GHz to 7. GHz. This mixer is fabricated in a gallium arsenide (GaAs) metal semiconductor field effect transistor (MESFET) process and requires no external components or matching circuitry. GaAs, MMIC Fundamental Mixer, 2. GHz to 7. GHz HMC7A FUNCTIONAL BLOCK DIAGRAM 1 GND 2 LO 3 GND GND IF GND = NO INTERNAL CONNECTION. Figure GND 1 RF GND PACKAGE BASE GND The HMC7A provides excellent local oscillator (LO) to radio frequency (RF) and LO to intermediate frequency (IF) isolation due to optimized balun structures. The RoHS-compliant HMC7A eliminates the need for wire bonding and is compatible with high volume surface-mount manufacturing techniques Rev. F Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 91, Norwood, MA 22-91, U.S.A. Tel: Analog Devices, Inc. All rights reserved. Technical Support
2 HMC7A TABLE OF CONTENTS Features... 1 Applications... 1 Functional Block Diagram... 1 General Description... 1 Revision History... 2 Electrical Specifications GHz to. GHz Frequency Range GHz to 7. GHz Frequency Range... 3 Absolute Maximum Ratings... 4 ESD Caution... 4 Pin Configuration and Function Descriptions... Interface Schematics... Typical Performance Characteristics... 7 Downconverter Performance with Upper Sideband Selected, IF = 1 MHz... 7 Downconverter Performance with Upper Sideband Selected, IF = 1 MHz... 9 Downconverter Performance with Upper Sideband Selected, IF = 2 MHz... 1 Downconverter Performance with Lower Sideband Selected, IF = 1 MHz Data Sheet Downconverter Performance with Lower Sideband Selected, IF = 1 MHz... Downconverter Performance with Lower Sideband Selected, IF = 2 MHz P1dB Performance with Downconverter Mode Selected at LO Drive = dbm Upconverter Performance with Upper Sideband Selected, IF = 1 MHz... Upconverter Performance with Upper Sideband Selected, IF = 1 MHz... 1 Upconverter Performance with Upper Sideband Selected, IF = 2 MHz Upconverter Performance with Lower Sideband Selected, IF = 1 MHz... 1 Upconverter Performance with Lower Sideband Selected, IF = 1 MHz Upconverter Performance with Lower Sideband Selected, IF = 2 MHz... 2 Spurious Performance with Upper Sideband Selected, IF = 1 MHz Applications Information Outline Dimensions Ordering Guide REVISION HISTORY 4/21 Rev. E to Rev. F Changes to Table /217 Rev. D to Rev. E Added Field Induced Charge Device Model (FICDM) Parameter, Table Changes to Ordering Guide /217 Rev. C to Rev. D Changes to Ordering Guide /21 Rev. B to Rev. C Changes to Ordering Guide /21 Rev. A to Rev. B Change to LO to RF Isolation Parameter, Table /2 Rev. to Rev. A Changes to Features Section... 1 Added Maximum Peak Reflow Temperature Parameter, Table Updated Outline Dimensions Changes to Ordering Guide /2 Revision : Initial Version Rev. F Page 2 of 23
3 HMC7A ELECTRICAL SPECIFICATIONS 2. GHz TO. GHz FREQUENCY RANGE TA = C, IF = 1 MHz, LO drive = dbm. All measurements performed as a downconverter with the upper sideband selected, unless otherwise noted. Table 1. Parameter Min Typ Max Unit OPERATING CONDITIONS RF Frequency Range 2.. GHz LO Frequency Range 2.. GHz IF Frequency Range DC 3 GHz PERFORMANCE Conversion Loss 1. db Noise Figure, Single Sideband (SSB) db LO to RF Isolation 4 db LO to IF Isolation 2 3 db RF to IF Isolation 2 db Input Third-Order Intercept (IP3) 14 1 dbm Input Second-Order Intercept (IP2) dbm Input Power for 1 db Compression (P1dB) 1 dbm RF Port Return Loss 1 db LO Port Return Loss db. GHz TO 7. GHz FREQUENCY RANGE TA = C, IF = 1 MHz, LO drive = dbm. All measurements performed as a downconverter with the upper sideband selected, unless otherwise noted. Table 2. Parameter Min Typ Max Unit OPERATING CONDITIONS RF Frequency Range. 7. GHz LO Frequency Range. 7. GHz IF Frequency Range DC 3 GHz PERFORMANCE Conversion Loss. 1. db Noise Figure, Single Sideband (SSB). db LO to RF Isolation db LO to IF Isolation 33 db RF to IF Isolation db Input Third-Order Intercept (IP3) 14 1 dbm Input Second-Order Intercept (IP2) dbm Input Power for 1 db Compression (P1dB) 1 dbm RF Port Return Loss db LO Port Return Loss db Rev. F Page 3 of 23
4 HMC7A ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Rating RF Input Power dbm LO Input Power 27 dbm Channel Temperature 17 C Continuous PDISS (T = C), Derate 9. mw/ C 7 mw Above C) Thermal Resistance (Channel to Ground Pad) C/W Maximum Peak Reflow Temperature (MSL3) 2 C Storage Temperature Range C to + C Operating Temperature Range 4 C to + C ESD Sensitivity, Human Body Model (HBM) 1 V (Class 1C) Field Induced Charge Device Model (FICDM) 1 V (Class C3) Data Sheet Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ESD CAUTION Rev. F Page 4 of 23
5 HMC7A PIN CONFIGURATION AND FUNCTION DESCRIPTIONS GND 2 LO 3 GND 4 HMC7A TOP VIEW (Not to Scale) GND RF GND 7 9 GND IF GND 1 11 NOTES 1. = NO INTERNAL CONNECTION. 2. CONNECT THE EXPOSED PAD TO A LOW IMPEDANCE THERMAL AND ELECTRICAL GROUND PLANE Figure 2. Pin Configuration Table 4. Pin Function Descriptions Pin No. Mnemonic Description 1, to 7, 11 to 14, 1 to 24 No Internal Connection. No connection is required on these pins. These pins are not internally connected. However, all data is measured with these pins connected to RF/dc ground externally. 2, 4,, 1,, 17 GND Ground Connect. Connect these pins and the package bottom to RF/dc ground. 3 LO Local Oscillator Port. This pin is dc-coupled and matched to Ω. 9 IF Intermediate Frequency Port. This pin is dc-coupled. For applications not requiring operation to dc, block this pin externally using a series capacitor with a value chosen to pass the necessary IF frequency range. For operation to dc, this pin must not source or sink more than 2 ma of current or device nonfunctionality or device failure may result. 1 RF Radio Frequency Port. This pin is dc-coupled and matched to Ω. EPAD Exposed Pad. Connect the exposed pad to a low impedance thermal and electrical ground plane. Rev. F Page of 23
6 HMC7A Data Sheet INTERFACE SCHEMATICS GND IF Figure 3. GND Interface Schematic Figure. IF Interface Schematic LO RF Figure 4. LO Interface Schematic Figure. RF Interface Schematic Rev. F Page of 23
7 HMC7A TYPICAL PERFORMANCE CHARACTERISTICS DOWNCONVERTER PERFORMANCE WITH UPPER SIDEBAND SELECTED, IF = 1 MHz T A = C 1 RF TO IF LO TO RF LO TO IF ISOLATION (db) Figure 7. Conversion Gain vs. RF Frequency at Various Temperatures, 2 Figure. Conversion Gain vs. RF Frequency at Various LO Drives LO RETURN LOSS (db) 1 2 RF/LO FREQUENCY (GHz) Figure 1. Isolation vs. RF/LO Frequency 3 T A = C 3 LO FREQUENCY (GHz) Figure 11. LO Port Return Loss vs. LO Frequency, CONVERSION GAIN IF RETURN LOSS T A = C RESPONSE (db) 1 2 RF RETURN LOSS (db) IF FREQUENCY (GHz) Figure 9. Conversion Gain and IF Return Loss Response vs. IF Frequency, LO Frequency = 4. GHz Figure. RF Port Return Loss vs. RF Frequency, LO Frequency = 4. GHz, Rev. F Page 7 of 23
8 HMC7A Data Sheet T A = C Figure 13. Input IP3 vs. RF Frequency at Various Temperatures, Figure. Input IP3 vs. RF Frequency at Various LO Drives 7 T A = C 7 IP2 (dbm) 4 IP2 (dbm) Figure 14. Input IP2 vs. RF Frequency at Various Temperatures, Figure 1. Input IP2 vs. RF Frequency at Various LO Drives Rev. F Page of 23
9 HMC7A DOWNCONVERTER PERFORMANCE WITH UPPER SIDEBAND SELECTED, IF = 1 MHz T A = C 2 Figure 17. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 2. Conversion Gain vs. RF Frequency at Various LO Drives T A = C Figure 1. Input IP3 vs. RF Frequency at Various Temperatures, Figure 21. Input IP3 vs. RF Frequency at Various LO Drives 7 T A = C 7 IP2 (dbm) 4 IP2 (dbm) Figure 19. Input IP2 vs. RF Frequency at Various Temperatures, Figure 22. Input IP2 vs. RF Frequency at Various LO Drives Rev. F Page 9 of 23
10 HMC7A Data Sheet DOWNCONVERTER PERFORMANCE WITH UPPER SIDEBAND SELECTED, IF = 2 MHz T A = C 2 Figure 23. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 2. Conversion Gain vs. RF Frequency at Various LO Drives T A = C Figure 24. Input IP3 vs. RF Frequency at Various Temperatures, Figure 27. Input IP3 vs. RF Frequency at Various LO Drives 7 T A = C 7 IP2 (dbm) 4 IP2 (dbm) Figure. Input IP2 vs. RF Frequency at Various Temperatures, Figure 2. Input IP2 vs. RF Frequency at Various LO Drives Rev. F Page 1 of 23
11 HMC7A DOWNCONVERTER PERFORMANCE WITH LOWER SIDEBAND SELECTED, IF = 1 MHz T A = C 2 Figure 29. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 32. Conversion Gain vs. RF Frequency at Various LO Drives T A = C Figure 3. Input IP3 vs. RF Frequency at Various Temperatures, Figure 33. Input IP3 vs. RF Frequency at Various LO Drives 7 T A = C 7 IP2 (db) 4 IP2 (dbm) Figure 31. Input IP2 vs. RF Frequency at Various Temperatures, Figure 34. Input IP2 vs. RF Frequency at Various LO Drives Rev. F Page 11 of 23
12 HMC7A Data Sheet DOWNCONVERTER PERFORMANCE WITH LOWER SIDEBAND SELECTED, IF = 1 MHz T A = C 2 Figure 3. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 3. Conversion Gain vs. RF Frequency at Various LO Drives T A = C Figure 3. Input IP3 vs. RF Frequency at Various Temperatures, Figure 39. Input IP3 vs. RF Frequency at Various LO Drives 7 T A = C 7 IP2 (dbm) 4 IP2 (dbm) Figure 37. Input IP2 vs. RF Frequency at Various Temperatures, Figure 4. Input IP2 vs. RF Frequency at Various LO Drives Rev. F Page of 23
13 HMC7A DOWNCONVERTER PERFORMANCE WITH LOWER SIDEBAND SELECTED, IF = 2 MHz T A = C 2 Figure 41. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 44. Conversion Gain vs. RF Frequency at Various LO Drives T A = C Figure 42. Input IP3 vs. RF Frequency at Various Temperatures, Figure 4. Input IP3 vs. RF Frequency at Various LO Drives 7 T A = C 7 IP2 (dbm) 4 IP2 (dbm) Figure 43. Input IP2 vs. RF Frequency at Various Temperatures, Figure 4. Input IP2 vs. RF Frequency at Various LO Drives Rev. F Page 13 of 23
14 HMC7A Data Sheet P1dB PERFORMANCE WITH DOWNCONVERTER MODE SELECTED AT LO DRIVE = dbm 1 14 T A = C 1 14 T A = C 1 1 Figure 47. Input P1dB vs. RF Frequency at Various Temperatures, IF = 1 MHz, USB Figure. Input P1dB vs. RF Frequency at Various Temperatures, IF = 1 MHz, USB T A = C 1 14 T A = C 1 1 Figure 4. Input P1dB vs. RF Frequency at Various Temperatures, IF = 2 MHz, USB Figure 1. Input P1dB vs. RF Frequency at Various Temperatures, IF = 1 MHz, LSB T A = C 1 14 T A = C Figure 49. Input P1dB vs. RF Frequency at Various Temperatures, IF = 1 MHz, LSB Figure 2. Input P1dB vs. RF Frequency at Various Temperatures, IF = 2 MHz, LSB Rev. F Page 14 of 23
15 HMC7A UPCONVERTER PERFORMANCE WITH UPPER SIDEBAND SELECTED, IF = 1 MHz T A = C Figure 3. Conversion Gain vs. RF Frequency at Various Temperatures, Figure. Conversion Gain vs. RF Frequency at Various LO Drives 3 T A = C Figure 4. Input IP3 vs. RF Frequency at Various Temperatures, Figure 7. Input IP3 vs. RF Frequency at Various LO Drives 1 T A = C 4 2 Figure. Input P1dB vs. RF Frequency at Various Temperatures, Rev. F Page of 23
16 HMC7A Data Sheet UPCONVERTER PERFORMANCE WITH UPPER SIDEBAND SELECTED, IF = 1 MHz T A = C Figure. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 1. Conversion Gain vs. RF Frequency at Various LO Drives 3 T A = C Figure 9. Input IP3 vs. RF Frequency at Various Temperatures, Figure 2. Input IP3 vs. RF Frequency at Various LO Drives 1 T A = C 4 2 Figure. Input P1dB vs. RF Frequency at Various Temperatures, Rev. F Page 1 of 23
17 HMC7A UPCONVERTER PERFORMANCE WITH UPPER SIDEBAND SELECTED, IF = 2 MHz T A = C 2 Figure 3. Conversion Gain vs. RF Frequency at Various Temperatures, Figure. Conversion Gain vs. RF Frequency at Various LO Drives T A = C Figure 4. Input IP3 vs. RF Frequency at Various Temperatures, Figure 7. Input IP3 vs. RF Frequency at Various LO Drives 1 T A = C 4 2 Figure. Input P1dB vs. RF Frequency at Various Temperatures, Rev. F Page 17 of 23
18 HMC7A Data Sheet UPCONVERTER PERFORMANCE WITH LOWER SIDEBAND SELECTED, IF = 1 MHz T A = C 2 Figure. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 71. Conversion Gain vs. RF Frequency at Various LO Drives T A = C Figure 9. Input IP3 vs. RF Frequency at Various Temperatures, Figure 72. Input IP3 vs. RF Frequency at Various LO Drives 1 T A = C 4 2 Figure 7. Input P1dB vs. RF Frequency at Various Temperatures, Rev. F Page 1 of 23
19 HMC7A UPCONVERTER PERFORMANCE WITH LOWER SIDEBAND SELECTED, IF = 1 MHz T A = C 2 Figure 73. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 7. Conversion Gain vs. RF Frequency at Various LO Drives T A = C Figure 74. Input IP3 vs. RF Frequency at Various Temperatures, Figure 77. Input IP3 vs. RF Frequency at Various LO Drives 1 T A = C 4 2 Figure 7. Input P1dB vs. RF Frequency at Various Temperatures, Rev. F Page 19 of 23
20 HMC7A Data Sheet UPCONVERTER PERFORMANCE WITH LOWER SIDEBAND SELECTED, IF = 2 MHz T A = C 2 Figure 7. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 1. Conversion Gain vs. RF Frequency at Various LO Drives T A = C Figure 79. Input IP3 vs. RF Frequency at Various Temperatures, Figure 2. Input IP3 vs. RF Frequency at Various LO Drives 1 T A = C 4 2 Figure. Input P1dB vs. RF Frequency at Various Temperatures, Rev. F Page 2 of 23
21 HMC7A SPURIOUS PERFORMANCE WITH UPPER SIDEBAND SELECTED, IF = 1 MHz Mixer spurious products are measured in dbc from the IF output power level. Spur values are (M RF) (N LO). M N Spurious Outputs RF frequency = GHz, RF input power = 1 dbm, LO frequency = 4.9 GHz, LO drive = dbm. M RF N LO N/A N/A means not applicable. Rev. F Page 21 of 23
22 HMC7A Data Sheet APPLICATIONS INFORMATION Figure 3. Evaluation Printed Circuit Board (PCB) Table. List of Materials for Evaluation PCB EV1HMC7ALC4 1 Item Description J1, J2, J3 Johnson SMA connector U1 HMC7ALC4 mixer PCB evaluation PCB 3 1 Reference this number when ordering the complete evaluation PCB. 2 The circuit board material is Rogers This is the bare PCB of the evaluation PCB kit (see Figure 3). It is recommended that the application circuit board use RF circuit design techniques. Use signal lines with a Ω impedance, and connect the package ground leads and exposed pad directly to the ground plane. Use a sufficient number of via holes to connect the top and bottom ground planes. The evaluation circuit board shown in Figure 3 is available from Analog Devices, Inc., upon request. Rev. F Page 22 of 23
23 HMC7A OUTLINE DIMENSIONS PIN 1 INDICATOR SQ 3.7. BSC PIN BSC EXPOSED PAD SQ 2.4 PKG SEATING PLANE ORDERING GUIDE Temperature Model 1 Range TOP VIEW SIDE VIEW.32 BSC 13 BOTTOM VIEW 2. REF 3.1 BSC FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. Figure Terminal Ceramic Leadless Chip Carrier [LCC] (E-24-1) Dimensions shown in millimeters Package Body Material Lead Finish MSL Rating 2 Package Description B Package Option HMC7ALC4 4 C to + C Alumina Ceramic Gold over Nickel MSL3 24-Terminal Ceramic LCC E-24-1 HMC7ALC4TR 4 C to + C Alumina Ceramic Gold over Nickel MSL3 24-Terminal Ceramic LCC E-24-1 HMC7ALC4TR-R 4 C to + C Alumina Ceramic Gold over Nickel MSL3 24-Terminal Ceramic LCC E-24-1 EV1HMC7ALC4 Evaluation Board 1 All models are RoHS Compliant parts. 2 Maximum peak reflow temperature of 2 C Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D /1(F) Rev. F Page 23 of 23
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v4.112 Typical Applications The is ideal for: Point-to-Point and Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Functional Diagram Features General Description The is a
More informationFeatures. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]
v3.41 Typical Applications Features The is ideal for: Test Instrumentation Military & Space Fiber optics Functional Diagram P1dB Output Power: + dbm Psat Output Power: + dbm High Gain: db Output IP3: 42
More information= +25 C, IF = 2350 MHz, LO = +4 dbm, VDLO1, 2 = +3V, IDLO = 150 ma, VDRF = +3V, IDRF = 200mA, USB [1][2] Parameter Min. Typ. Max.
v1.31 HMC677ALC5A 37 - GHz Typical Applications The HMC677ALC5A is ideal for: Point-to-Point and Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Sensors Functional Diagram
More informationFeatures. = +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V
v4.1217 HMC49LP4E Typical Applications This amplifier is ideal for use as a power amplifier for 3.3-3.8 GHz applications: WiMAX 82.16 Fixed Wireless Access Wireless Local Loop Functional Diagram Features
More informationFeatures. = +25 C, VDD = +5 V, 0 dbm Drive Level [1]
Typical Applications Features The HMC196LP3E is suitable for: Point-to-Point & VSAT Radios Test Instrumentation Military & Space Functional Diagram High Output Power: 12 dbm Low Input Power Drive: -2 to
More informationFeatures. = +25 C, Vdd= 8V, Vgg2= 3V, Idd= 290 ma [1]
Typical Applications The is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C 3 I Test Instrumentation Fiber Optics Functional Diagram Features P1dB Output Power: + dbm Gain:
More informationGaAs phemt MMIC Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049
ACG ACG ACG FEATURES Low noise figure:. db PdB output power:. dbm PSAT output power: 7. dbm High gain: db Output IP: 9 dbm Supply voltage: VDD = 7 V at 7 ma Ω matched input/output (I/O) -lead mm mm SMT
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK Typical Applications The is ideal
More informationHigh Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz HMC349AMS8G
Data Sheet High Isolation, Nonreflective, GaAs, SPDT Switch,1 MHz to 4 GHz FEATURES Nonreflective, 5 Ω design High isolation: 57 db to 2 GHz Low insertion loss:.9 db to 2 GHz High input linearity 1 db
More informationFeatures. = +25 C, Vcc = +5.0V. Vcc = +5V Parameter
Typical Applications Ideal as a Driver & Amplifier for: 2.2-2.7 GHz MMDS 3. GHz Wireless Local Loop - 6 GHz UNII & HiperLAN Functional Diagram Features P1dB Output Power: +14 dbm Output IP3: +27 dbm Gain:
More informationFeatures. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V
Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v1.31 HMC677ALC5A 37 - GHz Typical
More informationOBSOLETE HMC915LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram. General Description
v1.5 LO AMPLIFIER,.5-2.7 GHz Typical Applications The is ideal for: PCS / 3G Infrastructure Base Stations & Repeaters WiMAX & WiBro ISM & Fixed Wireless Functional Diagram Features Input IP3: +28 dbm Low
More informationFeatures. = +25 C, Vdd= 5V, Vgg2= Open, Idd= 60 ma*
v.7 HMCLH AGC AMPLIFIER, - GHz Typical Applications The HMCLH is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military EW, ECM & C I Test Instrumentation Fiber Optics Functional Diagram Features
More informationFeatures. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain
Typical Applications The HMC82LP4E is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Marine Radar Military EW & ECM Functional Diagram Features High Saturated Output Power:
More informationSURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER,
v2.617 AMPLIFIER, - 12 GHz Typical Applications The is ideal for use as a power amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment and Sensors Military End-Use Features Saturated
More information9.25 GHz to GHz MMIC VCO with Half Frequency Output HMC1162
9.5 GHz to 10.10 GHz MMIC VCO with Half Frequency Output HMC116 FEATURES FUTIONAL BLOCK DIAGRAM Dual output f OUT = 9.5 GHz to 10.10 GHz f OUT / = 4.65 GHz to 5.050 GHz Power output (P OUT ): 11 dbm (typical)
More informationFeatures. Parameter* Min. Typ. Max. Units Frequency Range GHz Gain 2 5 db. Gain Variation over Temperature
v3.1 HMC59MSGE AMPLIFIER,. -.9 GHz Typical Applications The HMC59MSGE is ideal for: DTV Receivers Multi-Tuner Set Top Boxes PVRs & Home Gateways Functional Diagram Features Single-ended or Balanced Output
More informationParameter Frequency Min. Typ. Max. Units GHz GHz Attenuation Range GHz 31.5 db
v.37. db LSB GaAs MMIC 6-BIT DIGITAL POSITIVE CONTROL ATTENUATOR,. - 8. GHz Typical Applications Features ATTENUATORS - SMT The HMCALP3E is ideal for: WLAN & Point-to-Multi-Point Fiber Optics & Broadband
More informationHMC659LC5 LINEAR & POWER AMPLIFIERS - SMT. GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz. Features. Typical Applications. General Description
v.61 Typical Applications The wideband PA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram Features P1dB Output Power: +27.5
More informationFeatures. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz GHz. Attenuation Range GHz 15.
v.6.5 LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR,. - 33 GHz Typical Applications Features The is ideal for: Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar & ECM Space Applications
More information20 MHz to 500 MHz IF Gain Block ADL5531
Data Sheet FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at 190 MHz Output 1 db compression:
More informationDC to 1000 MHz IF Gain Block ADL5530
Data Sheet FEATURES Fixed gain of 16. db Operation up to MHz 37 dbm Output Third-Order Intercept (OIP3) 3 db noise figure Input/output internally matched to Ω Stable temperature and power supply 3 V or
More information20 MHz to 500 MHz IF Gain Block ADL5531
20 MHz to 500 MHz IF Gain Block ADL5531 FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at
More informationFeatures. Parameter Min. Typ. Max. Units. Frequency Range 8 12 GHz GHZ. Input Return Loss* GHZ 10 db
v6.316 MMIC 4-BIT DIGITAL Typical Applications The HMC43LC4B is ideal for: EW Receivers Weather & Military Radar Satellite Communications Beamforming Modules Functional Diagram Features Low RMS Phase Error:
More informationParameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC GHz 31.5 db
Typical Applications The is ideal for: 3G Infrastructure & access points Cellular/3G, LTE & UMB WiMAX, WiBN & Fixed Wireless Test Equipment and Sensors GSM, WCDMA & TD-SCDMA Functional Diagram Features.5
More informationHMC629ALP4E. 3 db LSB GaAs MMIC 4-BIT DIGITAL ATTENUATOR, DC - 10GHz. Typical Applications. Functional Diagram. General Description
v1.716 DIGITAL ATTENUATOR, DC - 1GHz Typical Applications The is ideal for: Cellular/3G Infrastructure WiBro / WiMAX / 4G Microwave Radio & VSAT Test Equipment and Sensors IF & RF Applications Functional
More information20 GHz to 44 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC1040CHIPS
Data Sheet FEATURES Low noise figure: 2 db typical High gain: 25. db typical P1dB output power: 13.5 dbm, 2 GHz to GHz High output IP3: 25.5 dbm typical Die size: 1.39 mm 1..2 mm APPLICATIONS Software
More informationLF to 4 GHz High Linearity Y-Mixer ADL5350
LF to GHz High Linearity Y-Mixer ADL535 FEATURES Broadband radio frequency (RF), intermediate frequency (IF), and local oscillator (LO) ports Conversion loss:. db Noise figure:.5 db High input IP3: 25
More informationFeatures. = +25 C, With 0/+5V Control, 50 Ohm System
Typical Applications This switch is suitable for usage in 50-Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz Functional Diagram Features Broadband Performance:
More informationHMC5805ALS6 AMPLIFIERS - LINEAR & POWER - SMT. Typical Applications. Features. Functional Diagram
HMC585ALS6 v2.517 GaAs phemt MMIC.25 WATT POWER AMPLIFIER DC - 4 GHz Typical Applications The HMC585ALS6 is ideal for: Test Instrumentation Microwave Radio & VSAT Military & Space Telecom Infrastructure
More informationFeatures. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 70 ma
v2.61 Typical Applications This is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram Features Low Noise Figure: 2.5 db Gain: 13 db P1dB
More informationFeatures. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 45 ma
v2.61 Typical Applications This is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram Features Low Noise Figure: 2. db High Gain: 22 db
More information= +25 C, With Vee = -5V & Vctl = 0/-5V
v.46.5db LSB GaAs MMIC 6-BIT DIGITAL Typical Applications Features The HMC44AG6 is ideal for: Telecom Infrastructure Military Radios, Radar & ECM Space Applications Test Instrumentation Functional Diagram.5
More informationFeatures. = +25 C, 50 Ohm system
v6.312 Typical Applications Features The E is ideal for: Point-to-Point Radio VSAT Radio Test Instrumentation Microwave Sensors Military, ECM & Radar Functional Diagram Wide Bandwidth: 5-26.5 GHz Excellent
More information0.1 GHz to 18 GHz, GaAs SP4T Switch HMC641A
Data Sheet 0. GHz to 8 GHz, GaAs SP4T Switch FEATURES Broadband frequency range: 0. GHz to 8 GHz Nonreflective 50 Ω design Low insertion loss: 2. db to 2 GHz High isolation: 42 db to 2 GHz High input linearity
More information50 MHz to 4.0 GHz RF/IF Gain Block ADL5602
Data Sheet FEATURES Fixed gain of 20 db Operation from 50 MHz to 4.0 GHz Highest dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 42.0 dbm at 2.0
More informationFeatures. DC GHz GHz GHz DC GHz GHz GHz GHz DC - 4 GHz GHz Supply Current (Icq) ma
HMC311ST9 / 311ST9E v.17 MMIC AMPLIFIER, DC - GHz Typical Applications The HMC311ST9(E) is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV & Cable Modem Microwave Radio Functional Diagram Features
More information1 MHz to 2.7 GHz RF Gain Block AD8354
Data Sheet FEATURES Fixed gain of 2 db Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dbm Input/output internally matched to Ω Temperature and power supply stable Noise figure: 4.2
More informationFeatures. Upconversion & Downconversion Applications MIXERS - SINGLE & DOUBLE BALANCED - SMT
v1. Typical Applications The HMC689LP4(E) is Ideal for: Cellular/3G & LTE/WiMAX/4G Basestations & Repeaters GSM, CDMA & OFDM Transmitters and Receivers Features High Input IP3: +32 dbm Low Conversion Loss:
More informationFeatures. = +25 C, 50 Ohm system. DC - 10GHz DC - 14 Ghz DC - 10 GHz DC - 14 GHz Return Loss DC - 14 GHz 5 10 db
Typical Applications v2.717 Features The is ideal for: Basestation Infrastructure Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar, & ECM Test Instrumentation Functional Diagram
More information30 MHz to 6 GHz RF/IF Gain Block ADL5544
Data Sheet FEATURES Fixed gain of 17.4 db Broadband operation from 3 MHz to 6 GHz Input/output internally matched to Ω Integrated bias control circuit OIP3 of 34.9 dbm at 9 MHz P1dB of 17.6 dbm at 9 MHz
More information100 MHz to 30 GHz, Silicon SPDT Switch ADRF5020
FEATURES Ultrawideband frequency range: 1 MHz to 3 GHz Nonreflective 5 Ω design Low insertion loss:. db to 3 GHz High isolation: 6 db to 3 GHz High input linearity 1 db power compression (P1dB): 8 dbm
More informationFeatures. = +25 C, IF = 200 MHz, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V*
v4.1 Typical Applications The HMC685LP4(E) is Ideal for: Cellular/3G & LTE/WiMAX/4G Basestations & Repeaters GSM, CDMA & OFDM Transmitters and Receivers Features High Input IP3: +35 dbm 8 db Conversion
More information30 MHz to 6 GHz RF/IF Gain Block ADL5611
Data Sheet FEATURES Fixed gain of 22.2 db Broad operation from 3 MHz to 6 GHz High dynamic range gain block Input and output internally matched to Ω Integrated bias circuit OIP3 of 4. dbm at 9 MHz P1dB
More informationHMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram
v2.14 Typical Applications The is ideal for: Point-to-Point Radio Point-to-Multi-Point Radio EW & ECM Subsystems Ka-Band Radar Test Equipment Functional Diagram Features Wide Gain Control Range: 1 db Single
More informationHMC695LP4 / HMC695LP4E
v.1 Typical Applications The HMC95LP(E) is ideal for: Fiber Optic Applications Point-to-Point Radios Military Radar Functional Diagram Features Output Power: +7 dbm Sub-Harmonic Suppression: >5 dbc SSB
More information20 MHz to 6 GHz RF/IF Gain Block ADL5542
FEATURES Fixed gain of db Operation up to 6 GHz Input/output internally matched to Ω Integrated bias control circuit Output IP3 46 dbm at MHz 4 dbm at 9 MHz Output 1 db compression:.6 db at 9 MHz Noise
More informationHMC540SLP3E v db LSB SILICON MMIC 4-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, GHz
HMC54SLP3E v.95 LSB SILICON MMIC 4-BIT DIGITAL POSITIVE CONTROL ATTENUATOR,. - 8 GHz Typical Applications Features The HMC54SLP3E is ideal for both RF and IF applications: Cellular Infrastructure Wireless
More information30 MHz to 6 GHz RF/IF Gain Block ADL5610
Data Sheet FEATURES Fixed gain of 18.4 db Broad operation from 3 MHz to 6 GHz High dynamic range gain block Input and output internally matched to Ω Integrated bias circuit OIP3 of 38.8 dbm at 9 MHz P1dB
More informationFeatures. Upconversion & Downconversion Applications MIXERS - SINGLE & DOUBLE BALANCED - SMT
v1. Typical Applications The HMC688LP4(E) is Ideal for: Cellular/3G & LTE/WiMAX/4G Basestations & Repeaters GSM, CDMA & OFDM Transmitters and Receivers Features High Input IP3: +35 dbm Low Conversion Loss:
More information1 MHz to 2.7 GHz RF Gain Block AD8354
1 MHz to 2.7 GHz RF Gain Block AD834 FEATURES Fixed gain of 2 db Operational frequency of 1 MHz to 2.7 GHz Linear output power up to 4 dbm Input/output internally matched to Ω Temperature and power supply
More informationHMC849ALP4CE SWITCHES - SPDT - SMT. HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz. Typical Applications. Features. Functional Diagram
Typical Applications The is ideal for: Cellular/4G Infrastructure WiMAX, WiBro & Fixed Wireless Automotive Telematics Mobile Radio Test Equipment Functional Diagram Features High Isolation: up to Single
More information30 MHz to 6 GHz RF/IF Gain Block ADL5611
Preliminary Technical Data FEATURES Fixed gain of 22.1 db Broad operation from 30 MHz to 6 GHz High dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3
More informationFeatures OBSOLETE. = +25 C, as a function of Vdd. Vdd = +3V Vdd = +5V Vdd = +5V Vdd = +5V Parameter
v5.117 HMC3 / 3E GENERAL PURPOSE 1 mw GaAs MMIC AMPLIFIER,. - 3. GHz Typical Applications Broadband or Narrow Band Applications: Cellular/PCS/3G Fixed Wireless & Telematics Cable Modem Termination Systems
More informationFeatures. = +25 C, Vdd = +5V, Idd = 400mA [1]
v.61 Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Features Saturated Output Power:.5 dbm @ 21% PAE High Output IP3: 34.5 dbm High Gain:.5
More informationGaAs, phemt, MMIC, Power Amplifier, HMC1126. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION
Data Sheet GaAs, phemt, MMIC, Power Amplifier, GHz to GHz FEATURES FUNCTIONAL BLOCK DIAGRAM Output power for 1 db compression (P1dB): 1. db typical Saturated output power (PSAT): 1 dbm typical Gain: 11
More informationHigh Speed, 10 GHz Window Comparator HMC974LC3C
Data Sheet High Speed, 0 GHz Window Comparator FEATURES Propagation delay: 88 ps Propagation delay at 50 mv overdrive: 20 ps Minimum detectable pulse width: 60 ps Differential latch control Power dissipation:
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.51 HMC32LC Typical Applications
More information2 GHz to 30 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC8402
2 GHz to 3 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC842 FEATURES Output power for 1 db compression (P1dB): 21. dbm typical Saturated output power (PSAT): 22 dbm typical Gain: 13. db typical Noise
More informationOBSOLETE. = +25 C, Vdd = Vs= +5V, Vctl= 0/ +5V. Parameter Frequency Min. Typ. Max. Units DC GHz 37. db Gain (Maximum Gain State)
v.1212.5 db LSB GaAs MMIC 6-BIT DIGITAL Typical Applications The is ideal for: IF & RF Applications Cellular/3G Infrastructure WiBro / WiMAX / 4G Microwave Radio & VSAT Test Equipment and Sensors Functional
More information