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1 Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

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3 Typical Applications The is ideal for: Features Conversion Gain: 1 db Point-to-Point and Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Sensors Functional Diagram Sideband Rejection: 17 dbc High Output IP3: +27 dbm Lead 5x5 mm SMT Ceramic Package: 25 mm² General Description The is a compact GaAs MMIC I/Q variable gain upconverter in a leadless RoHS compliant SMT package. This device provides a small signal conversion gain of 11 db with 17 dbc of sideband rejection, and 13 db of gain control. The utilizes a RF variable gain amplifier preceded by an I/Q mixer where the LO is driven by a X2 multiplier. IF1 and IF2 mixer inputs are provided and an external 9 hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering of the unwanted sideband. The is a much smaller alternative to hybrid style single sideband upconverter assemblies and it eliminates the need for wire bonding by allowing the use of surface mount manufacturing techniques. Electrical Specifications [1][2], T A = +25 C, IF = 235 MHz, LO = + dbm, VDLO1, 2 = +3V, IDLO = 15 ma, VDRF = +3V, IDRF = ma, USB [1][2] Parameter Min. Typ. Max. Units Frequency Range, RF Frequency Range, LO.5-22 GHz Frequency Range, IF - GHz Conversion Gain 7 1 db Sideband Rejection 17 dbc Dynamic Range 13 db 1 db Compression (Output) 1 dbm IP3 (Output) 26 dbm LO / RF Isolation 15 db Supply Current IDLO [2] 15 ma Supply Current IDRF [2] ma [1] Unless otherwise noted all measurements performed with low side LO, IF = 235 MHz and external IF 9 hybrid. [2] Adjust Vgg between -2 to V to achieve IDLO = 15 ma and IDRF = ma Typical. 1

4 Data Taken as SSB Upconverter with External IF 9 Hybrid, IF = 235 MHz Conversion Gain, USB vs. Temperature Conversion Gain, USB vs. LO Drive RF Return Loss vs. Temperature RETURN LOSS (db) IF Return Loss [1] RETURN LOSS (db) C - C IF1 IF2 +5 C - C dbm dbm dbm LO Return Loss vs. Temperature RETURN LOSS (db) C - C Sideband Rejection vs. Temperature IMAGE REJECTION (dbc) C - C [1] Data taken without external IF 9 hybrid 2

5 Data Taken as SSB Upconverter with External IF 9 Hybrid, IF = 235 MHz Input P1dB, USB vs. Temperature Output P1dB, USB vs. Temperature P1dB (dbm) Input IP3, USB vs. Temperature Conversion Gain, USB vs. Control Voltage C - C C - C GHz GHz P1dB (dbm) +5 C - C Output IP3, USB vs. Temperature C - C Input IP3, USB vs. Control Voltage GHz GHz

6 Data Taken as SSB Upconverter with External IF 9 Hybrid, IF = 235 MHz Output IP3, USB vs. Control Voltage 3 LO Isolation GHz GHz LO Isolation ISOLATION (db) LO/IF1 2LO/IF2 2LO/RF ISOLATION (db) LO FREQUENCY (GHz) LO/IF1 LO/IF2 LO/RF LO FREQUENCY (GHz)

7 Data Taken as SSB Upconverter with External IF 9 Hybrid, IF = 3 MHz Conversion Gain, USB vs. Temperature Sideband Rejection vs. Temperature IMAGE REJECTION (dbc) Output IP3, USB vs. Temperature C - C C - C C - C Conversion Gain, USB vs. LO Drive dbm dbm dbm Input IP3, USB vs. Temperature C - C Conversion Gain, USB vs. Control Voltage 3 GHz GHz

8 Data Taken as SSB Upconverter with External IF 9 Hybrid, IF = 3 MHz Input IP3, USB vs. Control Voltage GHz GHz Output IP3, USB vs. Control Voltage GHz GHz

9 Data Taken as SSB Upconverter with External IF 9 Hybrid, IF = 375 MHz Conversion Gain, USB vs. Temperature Conversion Gain, USB vs. LO Drive Sideband Rejection vs. Temperature IMAGE REJECTION (dbc) Output IP3, USB vs. Temperature C - C C - C C - C dbm dbm dbm Input IP3, USB vs. Temperature C - C Conversion Gain, USB vs. Control Voltage GHz GHz

10 Data Taken as SSB Upconverter with External IF 9 Hybrid, IF = 375 MHz Input IP3, LSB vs. Control Voltage 3 Output IP3, LSB vs. Control Voltage GHz GHz GHz GHz [1] Data taken without external IF 9 hybrid [2] All values in dbc below RF power level (2LO + IF) USB

11 Data Taken as SSB Upconverter with External IF 9 Hybrid, IF = 1 MHz Conversion Gain, USB vs. Temperature Conversion Gain, USB vs. LO Drive Sideband Rejection vs. Temperature IMAGE REJECTION (dbc) Output IP3, USB vs. Temperature C - C C - C C - C dbm dbm dbm Input IP3, USB vs. Temperature C - C Conversion Gain, USB vs. Control Voltage 3 GHz GHz

12 Data Taken as SSB Upconverter with External IF 9 Hybrid, IF = 1 MHz Input IP3, LSB vs. Control Voltage 3 Output IP3, LSB vs. Control Voltage GHz GHz GHz GHz

13 MxN Spurious Outputs [1][2] MxN Spurious Outputs [1][2] nlo nlo mif mif IF = dbm LO = dbm IF = 3 - dbm LO = dbm MxN Spurious Outputs [1][2] MxN Spurious Outputs [1][2] nlo nlo mif mif IF = - dbm LO = dbm IF = 1 - dbm LO = dbm [1] Data taken without external IF 9 hybrid [2] All values in dbc below RF power level (2LO + IF) USB 11

14 Pin Descriptions Pin Number Function Description Interface Schematic 1 VCTRL 2 IF1 3 IF2, 5, 6 N/C 7 VDLO1 9 VDLO2, 1, GND Vary Vctrl from -3.5V to V to adjust conversion gain.maximum Gain occurs at -3.5V. Current draw << 1 ma. Pins are DC coupled Must not source or sink more than +/- 3 ma for applications requiring operation to DC. No connection required. The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. Bias for multiplier input buffer amp. The recommended DC voltage is +3V. Bias for multiplier input buffer amp. The recommended DC voltage is +3V. These pins and package bottom must be connected to RF/DC ground. 11 LOIN LO input port. The recommeded LO power is to dbm. VGLO 13 VGRF Adjust VGLO for -1V to V to set the multiplier quiescent current to 15 ma ( - 23 ma with LO Drive ). Adjust VGRF for -1V to V to set the VGA current to ma. 1 RFOUT RF output port. 15 VDRF Bias voltage for the VGA. The recommended DC voltage is +3V.

15 Typical Application C1, C, C7, C1, C13, C 1 pf Capacitor, 2 Pkg. C2, C5, C, C11, C1, C17.1 uf Capacitor, 2 Pkg. C3, C6, C9, C, C15, C1.7 µf Capacitor, Case A Pkg. 13

16 Absolute Maximum Ratings IF Input LO Input Outline Drawing + dbm +1 dbm Channel Temperature 175 C Continuous Pdiss (T = 5 C) (derate 1.3 mw/ C above 5 C) Thermal Resistance (channel to ground paddle) 1.65 W 5.6 C/W Storage Temperature -65 to +15 C Operating Temperature - to +5 C ESD Sensitivity (HBM) Class1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS NOTES: 1.. PACKAGE BODY MATERIAL: ALUMINA 2.. LEAD AND GROUND PADDLE PLATING: 3 - MICROINCHES GOLD OVER 5 MICROINCHES MINIMUM NICKLE 3.. DIMENSIONS ARE IN INCHES [MILLIMETERS].. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5.. PACKAGE WARP SHALL NOT EXCEED.5mm DATUM 6.. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [2] [1] 676A Alumina, White Gold over Nickel MSL3 XXXX [1] Max peak reflow temperature of 26 C [2] -Digit lot number XXXX 1

17 Evaluation PCB List of Materials for Evaluation PCB Eval1- [1] Item Description J1, J2 SMA Connector J3, J K-Connector SRI J5 - J11 DC Pins C1, C, C7, C1, C13, C 1 pf Capacitor, 2 Pkg. C2, C5, C, C11, C1, C17.1 uf Capacitor, 2 Pkg. C3, C6, C9, C, C15, C1.7 µf Capacitor, Case A U1 PCB [2] Upconverter 6-3- Evaluation Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Arlon 25FR, FR or Rogers 35 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 5 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. 15

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19 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Analog Devices Inc.: TYTR TR TR-R5 TY-R5 EV1