21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter HMC815B

Transcription

1 Data Sheet 1 GHz to 7 GHz, GaAs, MMIC, I/Q Upconverter HMC1B FEATURES Conversion gain: db typical Sideband rejection: dbc typical OP1dB compression: dbm typical OIP3: 7 dbm typical LO to RF isolation: db typical LO to IF isolation: 1 db typical RF return loss: db typical LO return loss: 1 db typical IF return loss: 1 db typical Exposed pad,.9 mm.9 mm, 3-terminal, ceramic LCC APPLICATIONS Point to point and point to multipoint radios Military radars, electronic warfare, and electronic intelligence Satellite communications Sensors FUNCTIONAL BLOCK DIAGRAM LOIN 9 3 GND GND 31 IF 11 3 GND VGG 9 IF1 GND 13 RFOUT 7 GND VDD VDD VDD3 = NOT INTERNALLY CONNECTED Figure 1. PACKAGE BASE GND GENERAL DESCRIPTION The HMC1B is a compact gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (phemt), monolithic microwave integrated circuit (MMIC) upconverter in a RoHS compliant package that operates from 1 GHz to 7 GHz. This device provides a small signal conversion gain of db and a sideband rejection of dbc. The HMC1B utilizes a driver amplifier proceeded by an in phase/quadrature (I/Q) mixer where the LO is driven by an active multiplier. IF1 and IF mixer inputs are provided, and an external 9 hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering of unwanted sideband. The HMC1B is a smaller alternative to hybrid style single sideband (SSB) downconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques. The HMC1B is available in.9 mm.9 mm, 3-terminal ceramic LCC package and operates over the C to temperature range. An evaluation board for the HMC1B is also available upon request. Rev. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9, Norwood, MA -9, U.S.A. Tel: Analog Devices, Inc. All rights reserved. Technical Support

2 HMC1B TABLE OF CONTENTS Features... 1 Applications... 1 Functional Block Diagram... 1 General Description... 1 Revision History... Specifications... 3 Absolute Maximum Ratings... Thermal Resistance... ESD Caution... Pin Configuration and Function Descriptions... Interface Schematics... Typical Performance Characteristics... 7 IF = MHz, IF Input Power = dbm, Lower Sideband (High-Side LO)... 7 IF = MHz, IF Input Power = dbm, Lower Sideband (High-Side LO)... 9 IF = 37 MHz, IF Input Power = dbm, Lower Sideband (High-Side LO) Data Sheet IF = MHz, IF Input Power = dbm, Upper Sideband (Low-Side LO) IF = MHz, RF Input Power = dbm, Upper Sideband (Low-Side LO)... 1 IF = 37 MHz, RF Input Power = dbm, Upper Sideband (Low-Side LO) Isolation and Return Loss IF Bandwidth Performance: Lower Sideband (High-Side LO).. IF Bandwidth Performance: Upper Sideband (Low-Side LO)... 3 Spurious Performance... Theory of Operation... Applications Information... 7 Typical Application Circuit... 7 Evaluation Board Information... Outline Dimensions... 3 Ordering Guide... 3 REVISION HISTORY 1/ Revision : Initial Version Rev. Page of 3

3 Data Sheet HMC1B SPECIFICATIONS TA = C, intermediate frequency (IF) = MHz, VDD1 = VDD = VDD3 =. V, LO power = dbm, unless otherwise noted. Measurements performed with lower sideband selected and an external 9 hybrid at the IF ports, unless otherwise noted. Table 1. Parameter Symbol Min Typ Max Unit OPERATING CONDITIONS Frequency Range Radio Frequency RF 1 7 GHz Local Oscillator LO.. GHz Intermediate Frequency IF DC 3.7 GHz LO Drive Range dbm PERFORMANCE Conversion Gain 7 db Sideband Rejection dbc Output Power for 1 db Compression OP1dB dbm Output Third-Order Intercept OIP3. 7 dbm Isolation LO to RF db LO to IF 1 db Return Loss RF db LO 1 db IF 1 db POWER SUPPLY Total Drain Current RF Amplifier IDD + IDD3 7 3 ma LO Amplifier IDD1 1 ma Rev. Page 3 of 3

4 HMC1B ABSOLUTE MAXIMUM RATINGS Table. Parameter Rating Drain Bias Voltage (VDD1, VDD, VDD3). V Input Power LO (LOIN) 1 dbm IF (IF1, IF) dbm IF Source/Sink Current 3 ma Moisture Sensitivity Level (MSL) Rating 1 MSL3 Maximum Junction Temperature 17 C Storage Temperature Range C to +1 C Operating Temperature Range C to Reflow Temperature C Electrostatic Discharge Sensitivity Human Body Model (HBM) V Field Induced Charged Device Model V (FICDM) 1 See the Ordering Guide section. Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Data Sheet THERMAL RESISTANCE Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Careful attention to PCB thermal design is required. θja is the natural convection junction to ambient thermal resistance measured in a one cubic foot sealed enclosure. θjc is the junction to case thermal resistance. Table 3. Thermal Resistance Package Type θja θjc Unit E C/W 1 Thermal impedance simulated values are based on JEDEC SP test board with thermal vias. A cold plate is attached to the bottom side of the PCB using µm tin (3. W/mK). Refer to JEDEC standard JESD1- for additional information. ESD CAUTION Rev. Page of 3

5 Data Sheet HMC1B PIN CONFIGURATION AND FUNCTION DESCRIPTIONS 1 3 VDD1 7 3 GND 31 IF 3 GND 9 IF1 7 9 LOIN HMC1B TOP VIEW (Not to Scale) GND 11 VGG GND 13 RFOUT GND VDD 19 VDD3 17 PACKAGE BASE GND NOTES 1. = NOT INTERNALLY CONNECTED. THESE PINS ARE NOT CONNECTED INTERNALLY. HOWEVER, THESE PINS CAN BE CONNECTED TO RF/DC GROUND WITHOUT AFFECTING PERFORMANCE.. EXPOSED PAD. CONNECT THE EXPOSED PAD TO A LOW IMPEDANCE THERMAL AND ELECTRICAL GROUND PLANE. Figure. Pin Configuration Table. Pin Function Descriptions Pin No. Mnemonic Description 1 to, 7,, 11,, 17, 19,, to Not Internally Connected. These pins are not connected internally. However, these pins can be connected to RF/dc ground without affecting performance. VDD1 Power Supply Voltage for the LO Amplifier. See Figure 3 for the interface schematic. Refer to the typical application circuit (see Figure ) for the required external components. 9 LOIN Local Oscillator Input. See Figure for the interface schematic. This pin is ac-coupled and matched to Ω., 13, 1, 3, 3 GND Ground Connect. See Figure for the interface schematic. These pins and the exposed pad must be connected to RF/dc ground. VGG Gate Voltage for the RF Amplifier. See Figure for the interface schematic. Refer to the typical application circuit (see Figure ) for the required external components. RFOUT Radio Frequency Output. See Figure 7 for the interface schematic. This pin is ac-coupled and matched to Ω., 1 VDD3, VDD Power Supply Voltage for the RF Amplifier. See Figure for the interface schematic. Refer to the typical application circuit (see Figure ) for the required external components. 9, 31 IF1, IF Quadrature Intermediate Frequency Inputs. See Figure 9 for the interface schematic. For applications not requiring operation to dc, use an off chip dc blocking capacitor. For operation to dc, these pins must not source or sink more than 3 ma of current or device malfunction and failure can result. EPAD Exposed Pad. Connect the exposed pad to a low impedance thermal and electrical ground plane. Rev. Page of 3

6 HMC1B Data Sheet INTERFACE SCHEMATICS VDD Figure 3. VDD1 Interface RFOUT Figure 7. RFOUT Interface VDD3, VDD LOIN Figure. LOIN Interface Figure. VDD3, VDD Interface GND Figure. GND Interface IF1, IF Figure 9. IF1, IF Interface VGG Figure. VGG Interface Rev. Page of 3

7 Data Sheet HMC1B TYPICAL PERFORMANCE CHARACTERISTICS IF = MHz, IF INPUT POWER = dbm, LOWER SIDEBAND (HIGH-SIDE LO) 3 C 3 1 C Figure. Conversion Gain vs. RF Frequency over Temperature, dbm Figure 11. Conversion Gain vs. RF Frequency over LO Powers, TA = C Figure 13. Sideband Rejection vs. RF Frequency over Temperature, dbm Figure. Sideband Rejection vs. RF Frequency over LO Powers, TA = C V.V.7V 3 1.V.V.7V Figure. Conversion Gain vs. RF Frequency over VDD1,, TA = C Figure 1. Sideband Rejection vs. RF Frequency over VDD1,, TA = C Rev. Page 7 of 3

8 HMC1B Data Sheet C C Figure. Output IP3 vs. RF Frequency over Temperature, Figure 19. Output P1dB vs. RF Frequency over Temperature, dbm dbm Figure 17. Output IP3 vs. RF Frequency over LO Powers, TA = C Figure. Output P1dB vs. RF Frequency over LO Powers, TA = C V.V.7V.V.V.7V Figure. Output IP3 vs. RF Frequency over VDD1, TA = C Figure 1. Output P1dB vs. RF Frequency over VDD1, TA = C Rev. Page of 3

9 Data Sheet HMC1B IF = MHz, IF INPUT POWER = dbm, LOWER SIDEBAND (HIGH-SIDE LO) 3 C 3 1 C Figure. Conversion Gain vs. RF Frequency over Temperature, dbm Figure 3. Conversion Gain vs. RF Frequency over LO Powers, TA = C Figure. Sideband Rejection vs. RF Frequency over Temperature, dbm Figure. Sideband Rejection vs. RF Frequency over LO Powers, TA = C V.V.7V 3 1.V.V.7V Figure. Conversion Gain vs. RF Frequency over VDD1,, TA = C Figure 7. Sideband Rejection vs. RF Frequency over VDD1,, TA = C Rev. Page 9 of 3

10 HMC1B Data Sheet C C Figure. Output IP3 vs. RF Frequency over Temperature, Figure 31. Output P1dB vs. RF Frequency over Temperature, dbm dbm Figure 9. Output IP3 vs. RF Frequency over LO Powers, TA = C Figure 3. Output P1dB vs. RF Frequency over LO Powers, TA = C V.V.7V.V.V.7V Figure 3. Output IP3 vs. RF Frequency over VDD1,, TA = C Figure 33. Output P1dB vs. RF Frequency over VDD1,, TA = C Rev. Page of 3

11 Data Sheet HMC1B IF = 37 MHz, IF INPUT POWER = dbm, LOWER SIDEBAND (HIGH-SIDE LO) 3 C 3 1 C Figure 3. Conversion Gain vs. RF Frequency over Temperature, dbm Figure 3. Conversion Gain vs. RF Frequency over LO Powers, TA = C Figure 37. Sideband Rejection vs. RF Frequency over Temperature, dbm Figure 3. Sideband Rejection vs. RF Frequency over LO Powers, TA = C V.V.7V 3 1.V.V.7V Figure 3. Conversion Gain vs. RF Frequency over VDD1,, TA = C Figure 39. Sideband Rejection vs. RF Frequency over VDD1,, TA = C Rev. Page 11 of 3

12 HMC1B Data Sheet C C Figure. Output IP3 vs. RF Frequency over Temperature, Figure 3. Output P1dB vs. RF Frequency over Temperature, dbm dbm Figure 1. Output IP3 vs. RF Frequency over LO Powers, TA = C Figure. Output P1dB vs. RF Frequency over LO Powers, TA = C V.V.7V.V.V.7V Figure. Output IP3 vs. RF Frequency over VDD1,, TA = C Figure. Output P1dB vs. RF Frequency over VDD1,, TA = C Rev. Page of 3

13 Data Sheet HMC1B IF = MHz, IF INPUT POWER = dbm, UPPER SIDEBAND (LOW-SIDE LO) C C Figure. Conversion Gain vs. RF Frequency over Temperature, Figure 9. Sideband Rejection vs. RF Frequency over Temperature, dbm dbm Figure 7. Conversion Gain vs. RF Frequency over LO Powers, TA = C Figure. Sideband Rejection vs. RF Frequency over LO Powers, TA = C V.V.7V V.V.7V Figure. Conversion Gain vs. RF Frequency over VDD1,, TA = C Figure 1. Sideband Rejection vs. RF Frequency over VDD1,, TA = C Rev. Page 13 of 3

14 HMC1B Data Sheet C Figure. Output IP3 vs. RF Frequency over Temperature, C Figure. Output P1dB vs. RF Frequency over Temperature, dbm Figure 3. Output IP3 vs. RF Frequency over LO Powers, TA = C dbm Figure. Output P1dB vs. RF Frequency over LO Powers, TA = C V.V.7V.V.V.7V Figure. Output IP3 vs. RF Frequency over VDD1,, TA = C Figure 7. Output P1dB vs. RF Frequency over VDD1,, TA = C Rev. Page of 3

15 Data Sheet HMC1B IF = MHz, RF INPUT POWER = dbm, UPPER SIDEBAND (LOW-SIDE LO) C C Figure. Conversion Gain vs. RF Frequency over Temperature, Figure 1. Sideband Rejection vs. RF Frequency over Temperature, dbm dbm Figure 9. Conversion Gain vs. RF Frequency over LO Powers, TA = C Figure. Sideband Rejection vs. RF Frequency over LO Powers, TA = C V.V.7V V.V.7V Figure. Conversion Gain vs. RF Frequency over VDD1,, TA = C Figure 3. Sideband Rejection vs. RF Frequency over VDD1,, TA = C Rev. Page 1 of 3

16 HMC1B Data Sheet C C Figure. Output IP3 vs. RF Frequency over Temperature, Figure 7. Output P1dB vs. RF Frequency over Temperature, dbm dbm Figure. Output IP3 vs. RF Frequency over LO Powers, TA = C Figure. Output P1dB vs. RF Frequency over LO Powers, TA = C V.V.7V.V.V.7V Figure. Output IP3 vs. RF Frequency over VDD1,, TA = C Figure 9. Output P1dB vs. RF Frequency over VDD1,, TA = C Rev. Page of 3

17 Data Sheet HMC1B IF = 37 MHz, RF INPUT POWER = dbm, UPPER SIDEBAND (LOW-SIDE LO) C C Figure 7. Conversion Gain vs. RF Frequency over Temperature, Figure 73. Sideband Rejection vs. RF Frequency over Temperature, dbm dbm Figure 71. Conversion Gain vs. RF Frequency over LO Powers, TA = C Figure 7. Sideband Rejection vs. RF Frequency over LO Powers, TA = C V.V.7V V.V.7V Figure 7. Conversion Gain vs. RF Frequency over VDD1,, TA = C Figure 7. Sideband Rejection vs. RF Frequency over VDD1,, TA = C Rev. Page 17 of 3

18 HMC1B Data Sheet C C Figure 7. Output IP3 vs. RF Frequency over Temperature, Figure 79. Output P1dB vs. RF Frequency over Temperature, dbm dbm Figure 77. Output IP3 vs. RF Frequency over LO Powers, TA = C Figure. Output P1dB vs. RF Frequency over LO Powers, TA = C V.V.7V.V.V.7V Figure 7. Output IP3 vs. RF Frequency over VDD1,, TA = C Figure 1. Output P1dB vs. RF Frequency over VDD1,, TA = C Rev. Page of 3

19 Data Sheet ISOLATION AND RETURN LOSS LO TO IF ISOLATION (db) LO FREQUENCY (GHz), IF1, IF1 C, IF1, IF, IF C, IF Figure. LO to IF Isolation vs. LO Frequency over Temperature, LO TO IF ISOLATION (db) 7 HMC1B 3 dbm, IF1, IF1, IF1, IF1 dbm, IF, IF, IF, IF LO FREQUENCY (GHz) Figure. 1 LO to IF Isolation vs. 1 LO Frequency over LO Powers, TA = C LO TO IF ISOLATION (db) 3 dbm, IF1, IF1, IF1, IF1 dbm, IF, IF, IF, IF LO TO RF ISOLATION (db) 3 1 C LO FREQUENCY (GHz) Figure 3. LO to IF Isolation vs. LO Frequency over LO Powers, TA = C LO FREQUENCY (GHz) Figure. LO to RF Isolation vs. LO Frequency over Temperature, LO TO IF ISOLATION (db) 3, IF1, IF1 C, IF1, IF, IF C, IF LO TO RF ISOLATION (db) 1 dbm LO FREQUENCY (GHz) Figure. 1 LO to IF Isolation vs. 1 LO Frequency over Temperature, LO FREQUENCY (GHz) Figure 7. LO to RF Isolation vs. LO Frequency over LO Powers, TA = C Rev. Page 19 of 3

20 HMC1B Data Sheet 1 LO TO RF ISOLATION (db) 3 3 C LO RETURN LOSS (db) dbm LO FREQUENCY (GHz) Figure. 1 LO to RF Isolation vs. 1 LO Frequency over Temperature, LO FREQUENCY (GHz) Figure 91. LO Return Loss vs. LO Frequency over LO Powers, TA = C LO TO RF ISOLATION (db) 3 3 dbm RF RETURN LOSS (db) C LO FREQUENCY (GHz) Figure 9. 1 LO to RF Isolation vs. 1 LO Frequency over LO Powers, TA = C Figure 9. RF Return Loss vs. RF Frequency over Temperature, LO Frequency = GHz, LO RETURN LOSS (db) C RF RETURN LOSS (db) dbm LO FREQUENCY (GHz) Figure 9. LO Return Loss vs. LO Frequency over Temperature, Figure 93. RF Return Loss vs. RF Frequency over LO Powers, LO Frequency = GHz, TA = C Rev. Page of 3

21 Data Sheet HMC1B IF RETURN LOSS (db) 1 3 3, IF1, IF1 C, IF1, IF, IF C, IF IF RETURN LOSS (db) dbm, IF1, IF1, IF1, IF1 dbm, IF, IF, IF, IF IF FREQUENCY (GHz) IF FREQUENCY (GHz) Figure 9. IF Return Loss vs. IF Frequency over Temperature, LO Frequency = GHz, Figure 9. IF Return Loss vs. IF Frequency over LO Powers, LO Frequency = GHz, TA = C Rev. Page 1 of 3

22 HMC1B Data Sheet IF BANDWIDTH PERFORMANCE: LOWER SIDEBAND (HIGH-SIDE LO) 3 C 3 3 C IF FREQUENCY (GHz) IF FREQUENCY (GHz) Figure 9. Conversion Gain vs. IF Frequency over Temperature, LO Frequency = GHz, Figure 9. Output IP3 vs. IF Frequency over Temperature, LO Frequency = GHz, 3 dbm 3 3 dbm IF FREQUENCY (GHz) IF FREQUENCY (GHz) Figure 97. Conversion Gain vs. IF Frequency over LO Powers, LO Frequency = GHz, TA = C Figure 99. Output IP3 vs. IF Frequency over LO Powers, LO Frequency = GHz, TA = C Rev. Page of 3

23 Data Sheet HMC1B IF BANDWIDTH PERFORMANCE: UPPER SIDEBAND (LOW-SIDE LO) 3 C 3 3 C IF FREQUENCY (GHz) Figure. Conversion Gain vs. IF Frequency over Temperature, LO Frequency = GHz, IF FREQUENCY (GHz) Figure. Output IP3 vs. IF Frequency over LO Powers, LO Frequency = GHz, TA = C dbm dbm IF FREQUENCY (GHz) Figure 1. Conversion Gain vs. IF Frequency over Temperature, LO Frequency = GHz, IF FREQUENCY (GHz) Figure 3. Output IP3 vs. IF Frequency over LO Powers, LO Frequency = GHz, TA = C Rev. Page 3 of 3

24 HMC1B Data Sheet SPURIOUS PERFORMANCE M N Spurious Outputs, IF = MHz Mixer spurious products are measured in dbc from the RF output power level with lower sideband selected and without external 9 hybrid at the IF ports. N/A means not applicable. RF = 1 GHz, LO frequency = 11.7 GHz at LO input power = dbm, IF input power = dbm. M IF N LO N/A N/A N/A N/A RF = GHz, LO frequency =. GHz at LO input power = dbm, IF input power = dbm. M IF N LO N/A N/A 9 + N/A N/A RF = 3 GHz, LO frequency =.7 GHz at LO input power = dbm, IF input power = dbm. M IF N LO N/A N/A N/A N/A N/A RF = GHz, LO frequency = 13. GHz at LO input power = dbm, IF input power = dbm. M IF N LO N/A N/A N/A N/A N/A N/A RF = GHz, LO frequency = 13.7 GHz at LO input power = dbm, IF input power = dbm. M IF N LO N/A N/A N/A N/A N/A N/A RF = GHz, LO frequency =. GHz at LO input power = dbm, IF input power = dbm. M IF N LO N/A + N/A N/A N/A N/A N/A RF = 7 GHz, LO frequency =.7 GHz at LO input power = dbm, IF input power = dbm. M IF N LO N/A N/A N/A 1 N/A +1 7 N/A N/A N/A N/A Rev. Page of 3

25 Data Sheet HMC1B M N Spurious Outputs, IF = MHz Mixer spurious products are measured in dbc from the RF output power level with upper sideband selected and without external 9 hybrid at the IF ports. N/A means not applicable. RF = GHz, LO frequency =.7 GHz at LO input power = dbm, IF input power = dbm. M IF N LO N/A 9 N/A RF =. GHz, LO frequency = 11 GHz at LO input power = dbm, IF input power = dbm. M IF N LO N/A 3 N/A N/A RF = GHz, LO frequency = 11. GHz at LO input power = dbm, IF input power = dbm. M IF N LO N/A 33 N/A N/A RF =. GHz, LO frequency = 11. GHz at LO input power = dbm, IF input power = dbm. M IF N LO N/A 39 N/A N/A RF = GHz, LO frequency = 11.7 GHz at LO input power = dbm, IF input power = dbm. N LO 1 3 M IF N/A 3 N/A N/A RF =. GHz, LO frequency = GHz at LO input power = dbm, IF input power = dbm. M IF N LO N/A 7 N/A N/A N/A RF = 7 GHz, LO frequency =. GHz at LO input power = dbm, IF input power = dbm M IF N LO N/A N/A N/A N/A N/A Rev. Page of 3

26 HMC1B THEORY OF OPERATION The HMC1B is a GaAs, phemt, MMIC I/Q upconverter with an integrated LO buffer that upconverts IF between dc and 3.7 GHz to RF between 1 GHz and 7 GHz. LO buffer amplifiers are included on chip to allow an LO drive range from dbm to dbm for full performance. The LO path feeds a quadrature splitter followed by on-chip baluns that drive the I and Q singly balanced cores of the passive mixers. The RF Data Sheet output of the I and Q mixers are then summed through an on-chip Wilkinson power combiner and relatively matched to provide a single-ended, Ω output signal that is amplified by the RF amplifiers to produce a dc-coupled and Ω matched RF output signal at the RFOUT port. Rev. Page of 3

27 Data Sheet APPLICATIONS INFORMATION TYPICAL APPLICATION CIRCUIT Figure shows the typical application circuit for the HMC1B. To select the appropriate sideband, an external 9 hybrid is required. For applications not requiring operation to dc, use an off chip, dc blocking capacitor. For applications that require the LO signal at the output to be suppressed, use a bias tee or RF feed. Ensure that the source or sink current used for HMC1B LO suppression is <3 ma for each IF port to prevent damage to the device. The common-mode voltage for each IF port is V. To select the upper sideband, connect the IF1 pin to the 9 port of the hybrid and the IF pin to the port of the hybrid. To select the lower sideband, connect the IF1 pin to the port of the hybrid and the IF pin to the 9 port of the hybrid. IF IN IF1 J3 IF J 9 HYBRID COUPLER VDD1 J + C C.µF pf LOIN J1 C1 pf HMC1B PACKAGE BASE GND C3 pf C pf C7 pf C pf VDD J11 C11.µF VDD3 J C.µF VGG J7 + C9 C.µF pf RFOUT J Figure. Typical Application Circuit Rev. Page 7 of 3

28 HMC1B EVALUATION BOARD INFORMATION The circuit board used in the application must use RF circuit design techniques. Signal lines must have Ω impedance. Connect the package ground leads and exposed pad directly to the ground plane, as shown in Figure. Use a sufficient number of via holes to connect the top and bottom ground planes. The evaluation circuit board shown in Figure 7 is available from Analog Devices upon request. EV1HMC1BLC Power-On Sequence To set up the EV1HMC1BLC, take the following steps: 1. Power up VGG with a V supply.. Power up VDD and VDD3 with a. V supply. 3. Power up VDD1 with another. V supply.. Adjust the VGG supply between V and V until the total RF supply current (IDD + IDD3) = 7 ma.. Connect LOIN to the LO signal generator with an LO power of dbm (typical).. Apply the IF1 and IF signals. EV1HMC1BLC Power-Off Sequence To turn off the EV1HMC1BLC, take the following steps: 1. Turn off the LO and IF signals.. Set VGG to V. 3. Set the VDD1, VDD, and VDD3 supplies to V and then turn them off.. Turn off the VGG supply. Data Sheet Layout Solder the exposed pad on the underside of the HMC1B to a low thermal and electrical impedance ground plane. This exposed pad is typically soldered to an exposed opening in the solder mask on the evaluation board. Connect these ground vias to all other ground layers on the evaluation board to maximize heat dissipation from the device package. Figure and Figure show the PCB land pattern footprint for the HMC1B and the solder paste stencil for the HMC1B evaluation board, respectively. SOLDERMASK GROUND PAD PIN 1.1" MASK OPENING." REF.3" MASK OPENING.17" SQUARE." MASK/METAL OVERLAP." MIN MASK WIDTH.13" SQUARE MASK OPENING. CHAMFER FOR PIN1." SQUARE GROUND PAD Figure. PCB Land Pattern Footprint PAD SIZE.".".197" [.] ø.3" TYPICAL VIA SPACING ø." TYPICAL VIA TYP.19 SQUARE.13 SQUARE.17.7 TYP R. TYP 13 PLCS. TYP Figure. Solder Paste Stencil Rev. Page of 3

29 Data Sheet HMC1B Figure 7. HMC1B Evaluation Board Top Layer Table. Bill of Materials for the EV1HMC1BLC Evaluation Board PCB Reference Quantity Designator Description Manufacturer Part Number 1 Not applicable PCB, EV1HMC1BLC Analog Devices supplied 1 HMC1B Mixer, 1 GHz to 7 GHz upconverter Analog Devices HMC1B J1, J Connector, end launch,.9 mm, GHz, Southwest Microwave, Inc. 9-1A jack J3, J Johnson Subminiature Version A (SMA) Cinch Connectivity Solutions connectors Johnson J to J DC pin, PCB terminal Mill-Max Manufacturing Corporation 3 C1, C, C3, Ceramic capacitors, pf, %, V, CG, Kemet CC1JGACTU 1 C Ceramic capacitors, pf, V, X7R, Murata Manufacturing GRM1R71HKA1D 3 C, C, C7 Ceramic capacitors, pf, V, %, X7R, Murata Manufacturing GRMR71HKA1D 3 C, C9, C, C11 Tantalum capacitors,. μf, V, %, SMD, Case A AVX Corporation TAJAKRNJ Rev. Page 9 of 3

30 HMC1B Data Sheet OUTLINE DIMENSIONS PIN 1 INDICATOR..9 SQ.7. REF PIN 1 1. BSC EXPOSED PAD SQ 3. PKG SEATING PLANE TOP VIEW SIDE VIEW BOTTOM VIEW 3. REF. REF 9. MIN FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET D Figure. 3-Terminal Ceramic Leadless Chip Carrier [LCC] (E-3-1) Dimensions shown in millimeters ORDERING GUIDE Model 1 Temperature Range Package Body Material Lead Finish MSL Rating Package Description Package Option HMC1BLC C to Alumina Ceramic Gold over Nickel MSL3 3-Terminal LCC E-3-1 HMC1BLCTR C to Alumina Ceramic Gold over Nickel MSL3 3-Terminal LCC E-3-1 HMC1BLCTR-R C to Alumina Ceramic Gold over Nickel MSL3 3-Terminal LCC E-3-1 EV1HMC1BLC Evaluation PCB Assembly 1 The HMC1BLC, HMC1BLCTR, and the HMC1BLCTR-R are RoHS compliant parts. See the Absolute Maximum Ratings section. Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D /() Rev. Page 3 of 3