6 GHz to 10 GHz, GaAs, MMIC, I/Q Mixer HMC520A

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1 FEATURES Radio frequency (RF) range: 6 GHz to 1 GHz Local oscillator (LO) input frequency range: 6 GHz to 1 GHz Conversion loss: 8 db typical at 6 GHz to 1 GHz Image rejection: 23 dbc typical at 6 GHz to 1 GHz LO to RF isolation: 43 db typical LO to intermediate frequency (IF) isolation: 2 db typical Input third-order intercept (IP3): 19 dbm typical Input power for 1 db compression (P1dB): 1 dbm typical at 7.1 GHz to 8. GHz Wide IF frequency range: DC to 3. GHz 24-terminal, 4 mm 4 mm, ceramic leadless chip carrier APPLICATIONS Point to point microwave radios Point to multipoint radios Video satellites (VSATs) Digital radios Instrumentation Automatic test equipment (ATE) GENERAL DESCRIPTION The HMC2A is a compact gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), in-phase quadrature (I/Q) mixer in a 24-terminal, RoHS compliant, ceramic leadless chip carrier (LCC) package. The device can be used as either an image reject mixer or a single sideband upconverter. The mixer uses two standard double balanced 6 GHz to 1 GHz, GaAs, MMIC, I/Q Mixer HMC2A FUNCTIONAL BLOCK DIAGRAM NIC 1 NIC 2 GND 3 RF 4 GND NIC 6 24 NIC 23 NIC 22 NIC NIC NIC NIC IF1 NIC 1 IF2 GND NIC 2 NIC HMC2A 9 HYBRID Figure NIC 17 NIC 16 GND 1 LO 14 GND 13 NIC PACKAGE BASE GND mixer cells and a 9 hybrid fabricated in a GaAs, metal semiconductor field effect transistor (MESFET) process. The HMC2A is a much smaller alternative to a hybrid style image reject mixer and a single sideband upconverter assembly. The HMC2A eliminates the need for wire bonding, allowing the use of surface-mount manufacturing techniques Rev. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 916, Norwood, MA , U.S.A. Tel: Analog Devices, Inc. All rights reserved. Technical Support

2 HMC2A* PRODUCT PAGE QUICK LINKS Last Content Update: 11/29/217 COMPARABLE PARTS View a parametric search of comparable parts. EVALUATION KITS HMC2A Evaluation Board DOCUMENTATION HMC2A: 6 GHz to 1 GHz, GaAs, MMIC, I/Q Mixer Data Sheet REFERENCE MATERIALS Product Selection Guide RF, Microwave, and Millimeter Wave IC Selection Guide 217 DESIGN RESOURCES HMC2A Material Declaration PCN-PDN Information Quality And Reliability Symbols and Footprints DISCUSSIONS View all HMC2A EngineerZone Discussions. SAMPLE AND BUY Visit the product page to see pricing options. TECHNICAL SUPPORT Submit a technical question or find your regional support number. DOCUMENT FEEDBACK Submit feedback for this data sheet. This page is dynamically generated by Analog Devices, Inc., and inserted into this data sheet. A dynamic change to the content on this page will not trigger a change to either the revision number or the content of the product data sheet. This dynamic page may be frequently modified.

3 HMC2A TABLE OF CONTENTS Features... 1 Applications... 1 Functional Block Diagram... 1 General Description... 1 Revision History... 2 Specifications... 3 Absolute Maximum Ratings... 4 Thermal Resistance... 4 ESD Caution... 4 Pin Configuration and Function Descriptions... Interface Schematics... Typical Performance Characteristics... 6 Downconverter Performance: IF = 1 MHz, Lower Sideband (High-Side LO)... 6 Downconverter Performance: IF = 1 MHz, Upper Sideband (Low-Side LO)... 8 Downconverter Performance: IF = 1 MHz, Lower Sideband (High-Side LO)... 1 Downconverter Performance: IF = 1 MHz, Upper Sideband (Low-Side LO) Downconverter Performance: IF = 3 MHz, Lower Sideband (High-Side LO) Downconverter Performance: IF = 3 MHz, Upper Sideband (Low-Side LO) Upconverter Performance: IFIN = 1 MHz, Lower Sideband (High-Side LO) Amplitude/Phase Balance Downconverter: IF = 1 MHz, Lower Sideband (High-Side LO) Amplitude/Phase Balance Downconverter: IF = 1 MHz, Lower Sideband (High-Side LO)... 2 Amplitude/Phase Balance Downconverter: IF = 3 MHz, Lower Sideband (High-Side LO) IF Bandwidth, Downconverter Performance Isolation and Return Loss Spurious and Harmonics Performance Theory of Operation... 2 Applications Information Evaluation Board Information Outline Dimensions Ordering Guide REVISION HISTORY 1/217 Revision : Initial Version Rev. Page 2 of 28

4 HMC2A SPECIFICATIONS LO = 1 dbm, IF = 1 MHz, RF = 1 dbm,, unless otherwise noted. All measurements were made as a downconverter with the lower sideband selected (high-side LO) and an external 9 IF hybrid at the IF ports, unless otherwise noted. Table 1. Parameter Test Conditions/Comments Min Typ Max Unit RF RANGE 6 1 GHz LO INPUT FREQUENCY RANGE 6 1 GHz IF FREQUENCY RANGE DC 3. GHz LO AMPLITUDE 1 dbm 6 GHz to 1 GHz PERFORMANCE Conversion Loss 8 1 db Noise Figure 8. db Input Third-Order Intercept (IP3) 19 dbm Input Power for 1dB Compression (P1dB) 1. dbm Image Rejection dbc LO to RF Isolation Taken without external 9 IF hybrid db LO to IF Isolation Taken without external 9 IF hybrid 2 db Phase Balance Taken without external 9 IF hybrid Degree Amplitude Balance Taken without external 9 IF hybrid.3 db 7.1 GHz to 8. GHz PERFORMANCE Conversion Loss db Noise Figure 8 db Input Third-Order Intercept (IP3) 19 dbm Input Power for 1dB Compression (P1dB) 1 dbm Image Rejection 21 2 dbc LO to RF Isolation Taken without external 9 IF hybrid db LO to IF Isolation Taken without external 9 IF hybrid 2 db Phase Balance Taken without external 9 IF hybrid 4 Degree Amplitude Balance Taken without external 9 IF hybrid.3 db Rev. Page 3 of 28

5 HMC2A ABSOLUTE MAXIMUM RATINGS Table 2. Parameter Rating RF Input Power 2 dbm LO Input Power 27 dbm IF1 and IF2 Input Power 2 dbm IF DC Current 12 ma Maximum Peak Reflow Temperature 1 26 C Continuous Power Dissipation, PDISS (TA = 8 C, 4 mw Derate 4.44 mw/ C Above 8 C) Operating Temperature Range 4 C to +8 C Storage Temperature Range 6 C to +1 C Lead Temperature Range (Soldering 6 sec) 6 C to +1 C Electrostatic Discharge (ESD) Sensitivity Human Body Model (HBM) 7 V (Class 1B) Field Induced Charged Device Model (FICDM) 12 V (Class C3) THERMAL RESISTANCE Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Careful attention to PCB thermal design is required. Table 3. Thermal Resistance Package Type θja θjc 1 Unit E C 22 C/W 1 θjc is the thermal resistance, junction to case ( C/W). 2 See JEDEC standard JESD1-2 for additional information on optimizing the thermal impedance (PCB with 3 3 vias). ESD CAUTION 1 See the Ordering Guide section. Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Rev. Page 4 of 28

6 7 8 9 HMC2A PIN CONFIGURATION AND FUNCTION DESCRIPTIONS NIC NIC 1 2 GND RF 3 4 GND NIC 6 24 NIC 23 NIC 22 NIC NIC NIC IF1 NIC 1 IF2 11 GND NIC 21 NIC 2 NIC HMC2A TOP VIEW (Not to Scale) 18 NIC 17 NIC 16 GND 1 LO 14 GND 13 NIC NOTES 1. NIC = NOT INTERNALY CONNECTED. 2. EXPOSED PAD. THE EXPOSED PAD MUST BE CONNECTED TO PIN GND. Figure 2. Pin Configuration Table 4. Pin Function Descriptions Pin No. Mnemonic Description 1, 2, 6 to 8, 1, 13, NIC Not Internally Connected. 17 to 24 3,, 12, 14, 16 GND Ground. See Figure 7 for the GND interface schematic. 4 RF RF Port. This pin is ac-coupled internally and matched to Ω. See Figure 3 for the RF interface schematic. 9, 11 IF1, IF2 First and Second Quadrature Intermediate Frequency Input Pins. For applications that do not require operation to dc, use an off-chip dc blocking capacitor. For applications that require operation to dc, these pins must not source or sink more than 12 ma of current because the device may not function or possible device failure may result. See Figure and Figure 6 for the IF1 and IF2 interface schematics. 1 LO Local Oscillator Port. This pin is dc-coupled and matched to Ω. See Figure 4 for the LO interface schematic. EPAD Exposed Pad. The exposed pad must be connected to pin GND. INTERFACE SCHEMATICS RF Figure 3. RF Interface Schematic IF Figure 6. IF2 Interface Schematic LO Figure 4. LO Interface Schematic GND Figure 7. GND Interface Schematic IF1 Figure. IF1 Interface Schematic 136- Rev. Page of 28

7 HMC2A TYPICAL PERFORMANCE CHARACTERISTICS DOWNCONVERTER PERFORMANCE: IF = 1 MHz, LOWER SIDEBAND (HIGH-SIDE LO) Data taken as an image reject mixer with external 9 hybrid at the IF ports, LO = 1 dbm, unless otherwise noted. 1 1 T A = 4 C Figure 8. Conversion Gain vs. RF Frequency at Various Temperatures Figure 11. Conversion Gain vs. RF Frequency at Various LO Powers, IMAGE REJECTION (dbc) T A = 4 C Figure 9. Image Rejection vs. RF Frequency at Various Temperatures IMAGE REJECTION (dbc) Figure 12. Image Rejection vs. RF Frequency at Various LO Powers, INPUT IP3 (dbm) 1 1 INPUT IP3 (dbm) 1 1 T A = 4 C Figure 1. Input IP3 vs. RF Frequency at Various Temperatures Figure 13. Input IP3 vs. RF Frequency at Various LO Powers, Rev. Page 6 of 28

8 HMC2A NOISE FIGURE (db) 1 T A = 4 C NOISE FIGURE (db) Figure 14. Noise Figure vs. RF Frequency at Various Temperatures Figure 16. Noise Figure vs. RF Frequency at Various LO Powers, INPUT P1dB (dbm) 12 8 INPUT P1dB (dbm) T A = 4 C Figure 1. Input P1dB vs. RF Frequency at Various Temperatures Figure 17. Input P1dB vs. RF Frequency at Various LO Powers, Rev. Page 7 of 28

9 HMC2A DOWNCONVERTER PERFORMANCE: IF = 1 MHz, UPPER SIDEBAND (LOW-SIDE LO) Data taken as an image reject mixer with external 9 hybrid at the IF ports, LO = 1 dbm, unless otherwise noted. 1 1 T A = 4 C Figure 18. Conversion Gain vs. RF Frequency at Various Temperatures Figure 21. Conversion Gain vs. RF Frequency at Various LO Powers, IMAGE REJECTION (dbc) T A = 4 C IMAGE REJECTION (dbc) Figure 19. Image Rejection vs. RF Frequency at Various Temperatures Figure 22. Image Rejection vs. RF Frequency at Various LO Powers, INPUT IP3 (dbm) 1 1 INPUT IP3 (dbm) 1 1 T A = 4 C Figure 2. Input IP3 vs. RF Frequency at Various Temperatures Figure 23. Input IP3 vs. RF Frequency at Various LO Powers, Rev. Page 8 of 28

10 HMC2A NOISE FIGURE (db) 1 T A = 4 C NOISE FIGURE (db) Figure 24. Noise Figure vs. RF Frequency at Various Temperatures Figure 26. Noise Figure vs. RF Frequency at Various LO Powers, INPUT P1dB (dbm) 12 8 INPUT P1dB (dbm) C +2 C 4 C Figure 2. Input P1dB vs. RF Frequency at Various Temperatures Figure 27. Input P1dB vs. RF Frequency at Various LO Powers, Rev. Page 9 of 28

11 HMC2A DOWNCONVERTER PERFORMANCE: IF = 1 MHz, LOWER SIDEBAND (HIGH-SIDE LO) Data taken as an image reject mixer with external 9 hybrid at the IF ports, LO = 1 dbm, unless otherwise noted. 1 1 T A = 4 C Figure 28. Conversion Gain vs. RF Frequency at Various Temperatures Figure 31. Conversion Gain vs. RF Frequency at Various LO Powers, IMAGE REJECTION (dbc) T A = 4 C Figure 29. Image Rejection vs. RF Frequency at Various Temperatures IMAGE REJECTION (dbc) Figure 32. Image Rejection vs. RF Frequency at Various LO Powers, INPUT IP3 (dbm) 1 1 INPUT IP3 (dbm) 1 1 T A = 4 C Figure 3. Input IP3 vs. RF Frequency at Various Temperatures Figure 33. Input IP3 vs. RF Frequency at Various LO Powers, Rev. Page 1 of 28

12 HMC2A NOISE FIGURE (db) INPUT P1dB (dbm) T A = 4 C Figure 34. Noise Figure vs. RF Frequency at Various LO Powers, Figure 3. Input P1dB vs. RF Frequency at Various Temperatures Rev. Page 11 of 28

13 HMC2A DOWNCONVERTER PERFORMANCE: IF = 1 MHz, UPPER SIDEBAND (LOW-SIDE LO) Data taken as an image reject mixer with external 9 hybrid at the IF ports, LO = 1 dbm, unless otherwise noted. 1 1 T A = 4 C Figure 36. Conversion Gain vs. RF Frequency at Various Temperatures Figure 39. Conversion Gain vs. RF Frequency at Various LO Powers, IMAGE REJECTION (dbc) T A = 4 C IMAGE REJECTION (dbc) Figure 37. Image Rejection vs. RF Frequency at Various Temperatures Figure 4. Image Rejection vs. RF Frequency at Various LO Powers INPUT IP3 (dbm) T A = 4 C INPUT IP3 (dbm) Figure 38. Input IP3 vs. RF Frequency at Various Temperatures Figure 41. Input IP3 vs. RF Frequency at Various LO Powers, Rev. Page 12 of 28

14 HMC2A NOISE FIGURE (db) INPUT P1dB (dbm) T A = 4 C Figure 42. Noise Figure vs. RF Frequency at Various LO Powers, Figure 43. Input P1dB vs. RF Frequency at Various Temperatures Rev. Page 13 of 28

15 HMC2A DOWNCONVERTER PERFORMANCE: IF = 3 MHz, LOWER SIDEBAND (HIGH-SIDE LO) Data taken as an image reject mixer with external 9 hybrid at the IF ports, LO = 1 dbm, unless otherwise noted. 1 1 T A = 4 C Figure 44. Conversion Gain vs. RF Frequency at Various Temperatures Figure 47. Conversion Gain vs. RF Frequency at Various LO Powers, T A = 4 C 4 IMAGE REJECTION (dbc) IMAGE REJECTION (dbc) Figure 4. Image Rejection vs. RF Frequency at Various Temperatures Figure 48. Image Rejection vs. RF Frequency at Various LO Powers, T A = 4 C 3 2 INPUT IP3 (dbm) INPUT IP3 (dbm) Figure 46. Input IP3 vs. RF Frequency at Various Temperatures Figure 49. Input IP3 vs. RF Frequency at Various LO Powers, Rev. Page 14 of 28

16 HMC2A NOISE FIGURE (db) INPUT P1dB (dbm) T A = 4 C Figure. Noise Figure vs. RF Frequency at Various LO Powers, Figure 1. Input P1dB vs. RF Frequency at Various Temperatures Rev. Page 1 of 28

17 HMC2A DOWNCONVERTER PERFORMANCE: IF = 3 MHz, UPPER SIDEBAND (LOW-SIDE LO) Data taken as an image reject mixer with external 9 hybrid at the IF ports, LO = 1 dbm, unless otherwise noted. 1 1 T A = 4 C Figure 2. Conversion Gain vs. RF Frequency at Various Temperatures Figure. Conversion Gain vs. RF Frequency at Various LO Powers, IMAGE REJECTION (dbc) T A = 4 C Figure 3. Image Rejection vs. RF Frequency at Various Temperatures IMAGE REJECTION (dbc) Figure 6. Image Rejection vs. RF Frequency at Various LO Powers INPUT IP3 (dbm) 1 1 INPUT IP3 (dbm) 1 1 T A = 4 C Figure 4. Input IP3 vs. RF Frequency at Various Temperatures Figure 7. Input IP3 vs. RF Frequency at Various LO Powers, Rev. Page 16 of 28

18 HMC2A 2 16 INPUT P1dB (dbm) T A = 4 C Figure 8. Input P1dB vs. RF Frequency at Various Temperatures Rev. Page 17 of 28

19 HMC2A UPCONVERTER PERFORMANCE: IF IN = 1 MHz, LOWER SIDEBAND (HIGH-SIDE LO) Data taken as single sideband upconverter with external 9 hybrid at the IF ports, LO = 1 dbm, unless otherwise noted. 1 1 T A = 4 C Figure 9. Conversion Gain vs. RF Frequency at Various Temperatures Figure 62. Conversion Gain vs. RF Frequency at Various LO Powers, SIDEBAND REJECTION (dbc) T A = 4 C Figure 6. Sideband Rejection vs. RF Frequency at Various Temperatures SIDEBAND REJECTION (dbc) Figure 63. Sideband Rejection vs. RF Frequency at Various LO Powers, INPUT IP3 (dbm) 1 1 T A = 4 C INPUT IP3 (dbm) Figure 61. Input IP3 vs. RF Frequency at Various Temperature Figure 64. Input IP3 vs. RF Frequency at Various LO Powers, Rev. Page 18 of 28

20 HMC2A AMPLITUDE/PHASE BALANCE DOWNCONVERTER: IF = 1 MHz, LOWER SIDEBAND (HIGH-SIDE LO) Data taken at LO = 1 dbm, unless otherwise noted. AMPLITUDE BALANCE (db) T A = 4 C AMPLITUDE BALANCE (db) Figure 6. Amplitude Balance vs. RF Frequency at Various Temperatures Figure 67. Amplitude Balance vs. RF Frequency at Various LO Powers, T A = 4 C 1 1 PHASE BALANCE (Degrees) 1 PHASE BALANCE (Degrees) Figure 66. Phase Balance vs. RF Frequency at Various Temperatures Figure 68. Phase Balance vs. RF Frequency at Various LO Powers, Rev. Page 19 of 28

21 HMC2A AMPLITUDE/PHASE BALANCE DOWNCONVERTER: IF = 1 MHz, LOWER SIDEBAND (HIGH-SIDE LO) Data taken at LO = 1 dbm, unless otherwise noted. AMPLITUDE BALANCE (db) T A = 4 C AMPLITUDE BALANCE (db) Figure 69. Amplitude Balance vs. RF Frequency at Various Temperatures Figure 71. Amplitude Balance vs. RF Frequency at Various LO Powers, PHASE BALANCE (Degrees) 1 1 T A = 4 C PHASE BALANCE (Degrees) Figure 7. Phase Balance vs. RF Frequency at Various Temperatures Figure 72. Phase Balance vs. RF Frequency at Various LO Powers, Rev. Page 2 of 28

22 HMC2A AMPLITUDE/PHASE BALANCE DOWNCONVERTER: IF = 3 MHz, LOWER SIDEBAND (HIGH-SIDE LO) Data taken at LO = 1 dbm, unless otherwise noted. AMPLITUDE BALANCE (db) T A = 4 C AMPLITUDE BALANCE (db) Figure 73. Amplitude Balance vs. RF Frequency at Various Temperatures Figure 7. Amplitude Balance vs. RF Frequency at Various LO Powers, T A = 4 C 3 2 PHASE BALANCE (Degrees) Figure 74. Phase Balance vs. RF Frequency at Various Temperatures PHASE BALANCE (Degrees) Figure 76. Phase Balance vs. RF Frequency at Various LO Powers, Rev. Page 21 of 28

23 HMC2A IF BANDWIDTH, DOWNCONVERTER PERFORMANCE Data taken as an image reject mixer with an external 9 hybrid, and LO = 1 dbm, unless otherwise noted. 1 1 T A = 4 C 1 1 T A = 4 C IF FREQUENCY (GHz) Figure 77. Conversion Gain vs. IF Frequency at Various Temperatures, Lower Sideband, LO = 1. GHz IF FREQUENCY (GHz) Figure 78. Conversion Gain vs. IF Frequency at Various Temperatures, Upper Sideband, LO = 8. GHz Rev. Page 22 of 28

24 HMC2A ISOLATION AND RETURN LOSS 7 6 ISOLATION (db) LO TO RF LO TO IF1 1 LO TO IF2 RF TO IF1 RF TO IF IF RETURN LOSS (db) IF1 2 IF2 T A = 4 C IF FREQUENCY (GHz) Figure 79. Isolation vs. RF Frequency at LO = 1 dbm, Figure 81. IF Return Loss vs. IF Frequency at Various Temperatures, LO = 8. GHz at 1 dbm T A = 4 C LO RETURN LOSS (db) RF RETURN LOSS (db) LO FREQUENCY (GHz) Figure 8. LO Return Loss vs. LO Frequency at Various Temperatures at LO = 1 dbm T A = 4 C Figure 82. RF Return Loss vs. RF Frequency at Various Temperatures, LO = 8. GHz at 1 dbm Rev. Page 23 of 28

25 HMC2A SPURIOUS AND HARMONICS PERFORMANCE LO harmonic isolation, LO = 1 dbm, all values are in dbc below the input LO level at the RF port are positive, unless otherwise noted. Table. NLO Spur at RF Output (RFOUT) N LO LO Frequency (GHz) RF = 94 MHz at 1 dbm, LO = 9 MHz at 1 dbm, data taken without external hybrid, and all values are in dbc measured below the IF power level (M RF) (N LO) are positive, unless otherwise noted. Table 6. M N Spurious Output Performance, Downconverter, Lower Sideband (High-Side LO), IF = 1 MHz, N LO M RF RF = 76 MHz at 1 dbm, LO = 7 MHz at 1 dbm, data taken without external hybrid, and all values are in dbc measured below the IF power level (M RF) (N LO) are positive, unless otherwise noted. RFOUT = 76 MHz, LO = 7 MHz at 1 dbm, data taken without external hybrid, and all values are in dbc measured below the RFOUT power level (M IFIN) (N LO) are positive, unless otherwise noted. Table 8. M N Spurious Output Performance, Upconverter, Upper Sideband (Low-Side LO), IFIN = 1 MHz at 1 dbm, N LO M IF RFOUT = 94 MHz, LO = 9 MHz at 1 dbm, data taken without external hybrid, and all values are in dbc measured below the RFOUT power level (M IFIN) (N LO) are positive, unless otherwise noted. Table 9. M N Spurious Output Performance, Upconverter, Lower Sideband (High-Side LO), IFIN = 1 MHz at 1 dbm, N LO M IF Table 7. M N Spurious Output Performance, Downconverter, Upper Sideband (Low-Side LO), IF = 1 MHz, N LO M RF Rev. Page 24 of 28

26 THEORY OF OPERATION The HMC2A is a compact gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), in-phase quadrature (I/Q) mixer in a 24-terminal, RoHS compliant, ceramic leadless chip carrier (LCC) package. The device can be used as either an image reject mixer or a single sideband upconverter. The mixer uses two standard double balanced mixer cells and a 9 hybrid fabricated in HMC2A a GaAs, metal semiconductor field effect transistor (MESFET) process. This device is a much smaller alternative to a hybrid style image reject mixer and a single sideband upconverter assembly. The HMC2A eliminates the need for wire bonding, allowing the use of the surface-mount manufacturing techniques. Page 2 of 28

27 HMC2A APPLICATIONS INFORMATION Figure 83 shows the typical application circuit for the HMC2A. To select the appropriate sideband, an external 9 degree hybrid is needed. For applications not requiring operation to dc, use an off-chip dc blocking capacitor. RF HYBRID LO To select the upper sideband, connect IF1 to the 9 port of the hybrid and IF2 to the port of the hybrid. To select the lower sideband, switch these connections PACKAGE BASE IF1 IF2 GND EXTERNAL 9 HYBRID Figure 83. Typical Application Circuit IF Rev. Page 26 of 28

28 EVALUATION BOARD INFORMATION The EV1HMC2ALC4 evaluation PCB used in the application must use RF circuit design techniques. Signal lines must have Ω impedance and connect the package ground leads and exposed pad directly to the ground plane similarly to that shown HMC2A in Figure 84. Use a sufficient number of via holes to connect the top and bottom ground planes. The evaluation circuit board shown in Figure 84 is available from Analog Devices, Inc., upon request Figure 84. EV1HMC2ALC4 Evaluation PCB Top Layer Table 1. Bill of Materials for the EV1HMC2ALC4 Evaluation PCB Quantity Reference Designator Description Part Number PCB, EV1HMC2ALC J1, J2 (RF, LO) 2.92 mm SMA connectors, SRI Connector Gage J3, J4 (IF1, IF2) Gold plated SMA, edge mount with.2 inch pin connectors, Johnson SMA connectors U1 Device under test, HMC2ALC4 HMC2ALC4 Page 27 of 28

29 HMC2A OUTLINE DIMENSIONS PIN 1 INDICATOR SQ PIN 1 (.32.32) BSC EXPOSED PAD 2. SQ MAX TOP VIEW SIDE VIEW 12 BOTTOM VIEW 2. REF 3.1 BSC 7 SEATING PLANE FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. PKG A Figure Terminal Ceramic Leadless Chip Carrier [LCC] (E-24-1) Dimensions shown in millimeters ORDERING GUIDE Model 1 Temperature Range HMC2ALC4 4 C to +8 C Alumina Ceramic Package Body Material Lead Finish MSL Rating 2 Package Description Gold over Nickel MSL3 24-Terminal LCC E-24-1 Package Option Branding 3 H2A XXXX HMC2ALC4TR 4 C to +8 C Alumina Ceramic HMC2ALC4TR-R 4 C to +8 C Alumina Ceramic EV1HMC2ALC4 Gold over Nickel MLS3 24-Terminal LCC E-24-1 Gold over Nickel MLS3 24-Terminal LCC E-24-1 Evaluation Board H2A XXXX H2A XXXX 1 The HMC2ALC4, the HMC2ALC4TR, and the HMC2ALC4TR-R are RoHS Compliant Parts. 2 See the Absolute Maximum Ratings section. 3 The four-digit lot number is XXXX. 217 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D136--1/17() Rev. Page 28 of 28

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