Features OBSOLETE. = +25 C, as a function of Vdd. Vdd = +3V Vdd = +5V Vdd = +5V Vdd = +5V Parameter

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1 v5.117 HMC3 / 3E GENERAL PURPOSE 1 mw GaAs MMIC AMPLIFIER, GHz Typical Applications Broadband or Narrow Band Applications: Cellular/PCS/3G Fixed Wireless & Telematics Cable Modem Termination Systems WLAN, Bluetooth & RFID Functional Diagram Features : 1 db P1dB Output Power: +17 dbm@ +5V Single Supply: +3V or +5V No External Components Integrated DC Blocks Ultra Small Package: SOT26 General Description Electrical Specifications, T A = +25 C, as a function of Vdd The HMC3 & HMC3E are low cost MESFET MMIC amplifi ers that operate from a single +3 to +5V supply from. to 3. GHz. The surface mount SOT26 amplifi er can be used as a broadband amplifi er stage or used with external matching for optimized narrow band applications. With Vdd biased at +5V, the HMC3 & HMC3E offers 1 db of gain and + dbm of saturated output power while requiring only 53 ma of current. This amplifi er is ideal as a driver amplifi er for transmitters or for use as a local oscillator (LO) amplifi er to increase drive levels for passive mixers. The amplifi er occupies.1 in 2 ( mm 2 ), making it ideal for compact radio designs. Vdd = +3V Vdd = +5V Vdd = +5V Vdd = +5V Parameter Units Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Frequency Range GHz db Variation over Temperature db/ C Input Return Loss db Output Return Loss db Output Power for 1 db Compression (P1dB) dbm Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) dbm Noise Figure db Supply Current (Idd) ma - 2 One Technology Way, P.O. Box 16, Norwood, MA Phone: Order online at Alpha Road, Chelmsford, MA Phone: Fax: Application Support: Phone: 1--ANALOG-D

2 v5.117 HMC3 / 3E GENERAL PURPOSE 1 mw GaAs MMIC AMPLIFIER, GHz Broadband & Return Vdd = +5V RESPONSE (db) GAIN (db) RETURN LOSS (db) S11 S21 S C - C S11 Vdd=+5V S22 Vdd=+5V S11 Vdd=+3V S22 Vdd=+3V P1dB (dbm) GAIN (db) Vdd=+5V Vdd=+3V vs. Vdd = +5V vs. Vdd = +3V Input & Output Return Loss vs. Vdd Bias P1dB vs. Vdd Bias REVERSE ISOLATION (db) +5 C - C Reverse Isolation vs. Vdd Bias Vdd=+5V Vdd=+3V One Technology Way, P.O. Box 16, Norwood, MA Phone: Order online at Alpha Road, Chelmsford, MA Phone: Fax: Application Support: Phone: 1--ANALOG-D - 3

3 v5.117 HMC3 / 3E GENERAL PURPOSE 1 mw GaAs MMIC AMPLIFIER, GHz, Vdd = +5V (dbm), GAIN (db), (%) Psat (dbm) Psat vs. Vdd = +5V +5 C - C Output IP3 vs. Vdd = +5V IP3 (dbm) C GHz, Vdd = +5V (dbm), GAIN (db), (%) P1dB (dbm) Output P1dB vs. Vdd = +5V +5 C - C Typical Supply Current vs. Vdd Vdd (Vdc) Idd (ma) One Technology Way, P.O. Box 16, Norwood, MA Phone: Order online at Alpha Road, Chelmsford, MA Phone: Fax: Application Support: Phone: 1--ANALOG-D

4 v5.117 HMC3 / 3E GENERAL PURPOSE 1 mw GaAs MMIC AMPLIFIER, GHz, Vdd = +3V (dbm), GAIN (db), (%) Psat (dbm) Psat vs. Vdd = +3V +5 C - C Output IP3 vs. Vdd = +3V IP3 (dbm) C - C GHz, Vdd = +3V (dbm), GAIN (db), (%) P1dB (dbm) Output P1dB vs. Vdd = +3V +5 C - C Absolute Maximum Ratings Drain Bias Voltage (Vdd) +7. Vdc RF Input Power (RFIN)(Vdd = +5Vdc) +1 dbm Channel Temperature 15 C Continuous Pdiss (T = 5 C) (derate 6.25 mw/ C above 5 C).6 W Thermal Resistance (channel to lead) C/W Storage Temperature -65 to +15 C Operating Temperature - to +5 C ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS One Technology Way, P.O. Box 16, Norwood, MA Phone: Order online at Alpha Road, Chelmsford, MA Phone: Fax: Application Support: Phone: 1--ANALOG-D - 5

5 v5.117 HMC3 / 3E GENERAL PURPOSE 1 mw GaAs MMIC AMPLIFIER, GHz Outline Drawing Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] [1] H3 HMC3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 XXXX [2] 3E HMC3E RoHS-compliant Low Stress Injection Molded Plastic 1% matte Sn MSL1 XXXX [1] Max peak refl ow temperature of 235 C [2] Max peak refl ow temperature of 26 C [3] -Digit lot number XXXX Pin Descriptions Pin Number Function Description Interface Schematic 1 RFOUT This pin is AC coupled and matched to 5 Ohms. NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF.15mm PER SIDE.. DIMENSION DOES NOT INCLUDE MOLDFLASH OF.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND 2, 5, 6 GND These pins must be connected to RF/DC ground. 3 Vdd Power supply voltage. RFIN This pin is AC coupled and matched to 5 Ohms. - 6 One Technology Way, P.O. Box 16, Norwood, MA Phone: Order online at Alpha Road, Chelmsford, MA Phone: Fax: Application Support: Phone: 1--ANALOG-D

6 v5.117 HMC3 / 3E GENERAL PURPOSE 1 mw GaAs MMIC AMPLIFIER, GHz Evaluation PCB List of Materials for Evaluation PCB 132 [1] Item Description J1, J2 PCB Mount SMA Connector J3, J DC Pins U1 PCB [2] HMC3 / HMC3E Amplifi er 132 Evaluation Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 35 The circuit board used in the fi nal application should use RF circuit design techniques. Signal lines should have 5 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. One Technology Way, P.O. Box 16, Norwood, MA Phone: Order online at Alpha Road, Chelmsford, MA Phone: Fax: Application Support: Phone: 1--ANALOG-D - 7