Features. = +25 C, Vdd = +5V, Rbias = 10 Ohms*

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1 Typical Applications Functional Diagram The HMC36LP3 / HMC36LP3E is ideal for: Cellular/3G Infrastructure Base Stations & Repeaters CDMA, W-CDMA, & TD-SCDMA Private Land Mobile Radio GSM/GPRS & EDGE UHF Reallocation Applications HMC36LP3 / 36LP3E AMPLIFIER, - 1 MHz Features Noise Figure:. db Output IP3: +36 dbm Gain: 15 db Externally Adjustable Supply Current Single Positive Supply: +5V 5 Ohm Matched Input/Output General Description The HMC36LP3 & HMC36LP3E are GaAs PHEMT MMIC Low Noise Amplifi ers that are ideal for GSM & CDMA cellular basestation front-end receivers operating between and 1 MHz. The amplifi er has been optimized to provide. db noise fi gure, 15 db gain and +36 dbm output IP3 from a single supply of +5V. The HMC36LP3(E) feature an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. For applications which require improved noise fi gure, please see the HMC61LP3(E). Electrical Specifications, T A = +25 C, Vdd = +5V, Rbias = 1 Ohms* Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range MHz Gain db Gain Variation Over Temperature db / C Noise Figure db Input Return Loss db Output Return Loss db Reverse Isolation 2 22 db Output Power for 1dB Compression (P1dB) dbm Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) (-2 dbm Input Power per tone, 1 MHz tone spacing) dbm Supply Current (Idd) 3 3 ma *Rbias resistor value sets current, see application circuit herein. - 1 Phone: Order online at 2 Alpha Road, Chelmsford, MA 1824 Phone: Fax:

2 Broadband Gain & Return Loss HMC36LP3 / 36LP3E AMPLIFIER, - 1 MHz Gain vs. Temperature RESPONSE (db) S21 S11 S Input Return Loss vs. Temperature RETURN LOSS (db) C GAIN (db) C +85C - 4C Output Return Loss vs. Temperature RETURN LOSS (db) C Reverse Isolation vs. Temperature Noise Figure vs. Temperature 1.6 ISOLATION (db) C NOISE FIGURE (db) C Phone: Order online at 2 Alpha Road, Chelmsford, MA 1824 Phone: Fax:

3 P1dB vs. Idd = 3 ma HMC36LP3 / 36LP3E AMPLIFIER, - 1 MHz Psat vs. Idd = 3 ma P1dB (dbm) C Output IP3 vs. Idd = 3 ma IP3 (dbm) C Psat (dbm) C Gain, Noise Figure & Power vs. Supply 9 MHz GAIN (db) & P1dB (dbm) GAIN P1dB Noise figure NOISE FIGURE (db) SUPPLY CURRENT (ma) Absolute Maximum Ratings Typical Supply Current vs. Vdd with Rbias = 1 Ohms Drain Bias Voltage (Vdd) +8. Vdc Vdd (Vdc) Idd (ma) RF Input Power (RFIN)(Vs = +5. Vdc) +15 dbm Channel Temperature 15 C Continuous Pdiss (T = 85 C) (derate mw/ C above 85 C).69 W Thermal Resistance (channel to ground paddle) 84.5 C/W Storage Temperature -65 to +15 C Operating Temperature -4 to +85 C Recommended Bias Resistor Values for Various Idd Idd (ma) Rbias (Ohms) 6 12 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Phone: Order online at 2 Alpha Road, Chelmsford, MA 1824 Phone: Fax:

4 HMC36LP3 / 36LP3E Outline Drawing AMPLIFIER, - 1 MHz NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE.5mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED.5mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] [1] H36 HMC36LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 XXXX [2] H36 HMC36LP3E RoHS-compliant Low Stress Injection Molded Plastic 1% matte Sn MSL1 XXXX [1] Max peak refl ow temperature of 235 C [2] Max peak refl ow temperature of 26 C [3] 4-Digit lot number XXXX Phone: Order online at 2 Alpha Road, Chelmsford, MA 1824 Phone: Fax:

5 HMC36LP3 / 36LP3E Pin Descriptions AMPLIFIER, - 1 MHz Pin Number Function Description Interface Schematic 1, 4, 5,, 9, 12-14, 16 N/C 2 RFIN 3, 6, 1 GND 8 Res 11 RFOUT 15 Vdd No connection necessary. These pins may be connected to RF/DC ground. Performance will not be affected. This pin is matched to 5 Ohms with a 4 nh inductor to ground. See application circuit. These pins and package bottom must be connected to RF/DC ground. This pin is used to set the DC current of the amplifi er by selection of external bias resistor. See application circuit. This pin is AC coupled and matched to 5 Ohms from GHz. Power supply voltage. Choke inductor and bypass capacitors are required. See application circuit. Application Circuit Note 1: L1, L2 and C1 should be located as close to the pins as possible. - 5 Phone: Order online at 2 Alpha Road, Chelmsford, MA 1824 Phone: Fax:

6 HMC36LP3 / 36LP3E Evaluation PCB AMPLIFIER, - 1 MHz List of Materials for Evaluation PCB [1] Item J1 - J2 J3 - J4 C1 C2 C3 L1 L2 R1 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 1 pf Capacitor, 42 Pkg. 1 pf Capacitor, 63 Pkg. 15 pf Capacitor, 63 Pkg. 18 nh Inductor, 63 Pkg. 4 nh Inductor, 63 Pkg. Resistor, 42 Pkg. HMC36LP3 / HMC36LP3E Amplifi er Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 435 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 5 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. Phone: Order online at 2 Alpha Road, Chelmsford, MA 1824 Phone: Fax: