10 GHz to 20 GHz, GaAs, MMIC, Double Balanced Mixer HMC554ALC3B

Transcription

1 Data Sheet FEATURES Conversion loss: 8. db LO to RF Isolation: 37 db Input IP3: 2 dbm RoHS compliant, 2.9 mm 2.9 mm, 12-terminal LCC package APPLICATIONS Microwave and very small aperture terminal (VSAT) radios Test equipment Military electronic warfare (EW); electronic countermeasure (ECM); and command, control, communications and intelligence (C3I) 1 GHz to 2 GHz, GaAs, MMIC, Double Balanced Mixer HMC4ALC3B FUNCTIONAL BLOCK DIAGRAM GND 1 LO 2 GND 3 HMC4ALC3B NIC NIC NIC GND IF GND Figure 1. 9 GND 8 RF 7 GND PACKAGE BASE GND GENERAL DESCRIPTION The HMC4ALC3B is a general-purpose, double-balanced mixer in a leadless RoHS compliant LCC package that can be used as an upconverter or downconverter between 1 GHz and 2 GHz. This mixer is fabricated in a gallium arsenide (GaAs) metal semiconductor field effect transistor (MESFET) process, and requires no external components or matching circuitry. The HMC4ALC3B provides excellent local osciallator (LO) to radio frequency (RF) and LO to intermediate frequency (IF) isolation due to optimized balun structures. The RoHS compliant HMC4ALC3B eliminates the need for wire bonding, and is compatible with high volume surface-mount manufacturing techniques. Rev. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 916, Norwood, MA , U.S.A. Tel: Analog Devices, Inc. All rights reserved. Technical Support

2 HMC4ALC3B TABLE OF CONTENTS Features... 1 Applications... 1 Functional Block Diagram... 1 General Description... 1 Revision History... 2 Specifications... 3 Absolute Maximum Ratings... 4 Thermal Resistance... 4 ESD Caution... 4 Pin Configuration and Function Descriptions... Interface Schematics... Typical Performance Characteristics... 6 Downconverter Performance, IF = 1 MHz... 6 Data Sheet Downconverter Performance, IF = 3 MHz... 1 Upconverter Performance, IFIN = 1 MHz Upconverter Performance, IFIN = 3 MHz Isolation and Return Loss IF Bandwidth Downconverter Spurious and Harmonics Performance Theory of Operation Applications Information... 2 Typical Application Circuit... 2 Evaluation PCB Information... 2 Outline Dimensions Ordering Guide REVISION HISTORY 4/218 Revision : Initial Version Rev. Page 2 of 26

3 Data Sheet HMC4ALC3B SPECIFICATIONS, IF = 1 MHz,, upper side band. All measurements performed as a downconverter, unless otherwise noted, on the evaluation printed circuit board (PCB). Table 1. Parameter Symbol Min Typ Max Unit FREQUENCY RF Pin 1 2 GHz IF Pin DC 6 GHz LO Pin 1 2 GHz LO AMPLITUDE dbm 1 GHz to 2 GHz PERFORMANCE Downconverter Conversion Loss db Single Sideband Noise Figure SSB NF 9. db Input Third-Order Intercept IP dbm Input 1 db Compression Point P1dB 21 dbm Input Second-Order Intercept IP2 46 dbm Upconverter IFIN Conversion Loss 7 db Input Third-Order Intercept IP3 19. dbm Input 1 db Compression Point P1dB 1 dbm Isolation RF to IF db LO to RF 2 37 db LO to IF db 12 GHz to 16 GHz PERFORMANCE Downconverter Conversion Loss 8 db Single Sideband Noise Figure SSB NF 9 db Input Third-Order Intercept IP dbm Input 1 db Compression Point P1dB 2 dbm Input Second-Order Intercept IP2 4 dbm Upconverter IFIN Conversion Loss 6. db Input Third-Order Intercept IP3 18 dbm Input 1 db Compression Point P1dB 1 dbm Rev. Page 3 of 26

4 HMC4ALC3B ABSOLUTE MAXIMUM RATINGS Table 2. Parameter Rating RF Input Power 2 dbm LO Input Power 26 dbm IF Input Power 2 dbm IF Source/Sink Current 3 ma Reflow Temperature 26 C Maximum Junction Temperature 17 C Continuous Power Dissipation, PDISS 333 mw (TA = 8 C, Derate 3.7 mw/ C Above 8 C) Operating Temperature Range 4 C to +8 C Storage Temperature Range 6 C to +1 C Electrostatic Discharge (ESD) Sensitivity Human Body Model (HBM) 2 V; Class B Field Induced Charged Device Model 12 V; Class IV (FICDM) Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Data Sheet THERMAL RESISTANCE Thermal performance is directly linked to PCB design and operating environment. Careful attention to PCB thermal design is required. θja is the natural convection junction to ambient thermal resistance measured in a one cubic foot sealed enclosure. θjc is the junction to case thermal resistance. Table 3. Thermal Resistance Package Type θja θjc Unit E C/W 1 Test Condition 1: JEDEC standard JESD1-2. ESD CAUTION Rev. Page 4 of 26

5 Data Sheet HMC4ALC3B PIN CONFIGURATION AND FUNCTION DESCRIPTIONS HMC4ALC3B TOP VIEW (Not to Scale) NIC 12 NIC 11 NIC 1 GND 1 LO 2 GND 3 9 GND 8 RF 7 GND 4 GND IF 6 GND PACKAGE BASE GND NOTES 1. NOT INTERNALLY CONNECTED. THESE PINS CAN BE CONNECTED TO RF/DC GROUND. PERFORMANCE IS NOT AFFECTED. 2. EXPOSED PAD. THE EXPOSED PAD MUST BE CONNECTED TO RF/DC GROUND. Figure 2. Pin Configuration Table 4. Pin Function Descriptions Pin No. Mnemonic Description 1, 3, 4, 6, 7, 9 GND Ground. These pins and package bottom must be connect to RF/dc ground. 2 LO Local Oscillator Port. This pin is ac-coupled and matched to Ω. IF Intermediate Frequency Port. This pin is dc-coupled. For applications not requiring operation to dc, dc block this port externally using a series capacitor of a value chosen to pass the necessary IF frequency range. For operation to dc, this pin must not source/sink more than 3 ma of current or die malfunction and possible die failure may result. 8 RF Radio Frequency Port. This pin is ac-coupled and matched to Ω. 1, 11, 12 NIC Not Internally Connected. These pins can be connected to RF/dc ground. Performance is not affected. EPAD Exposed Pad. The exposed pad must be connected to RF/dc ground. INTERFACE SCHEMATICS GND IF Figure 3. GND Interface Schematic LO Figure. IF Interface Schematic RF Figure 4. LO Interface Schematic Figure 6. RF Interface Schematic Rev. Page of 26

6 HMC4ALC3B Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS DOWNCONVERTER PERFORMANCE, IF = 1 MHz Upper Sideband (Low-Side LO) 1 T A = 4 C 1 Figure 7. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 1. Conversion Gain vs. RF Frequency at Various LO Power Levels, T A = 4 C Figure 8. Input IP3 vs. RF Frequency at Various Temperatures, Figure 11. Input IP3 vs. RF Frequency at Various LO Power Levels, NOISE FIGURE (db) T A = 4 C NOISE FIGURE (db) Figure 9. Noise Figure vs. RF Frequency at Various Temperatures, Figure 12. Noise Figure vs. RF Frequency at Various LO Power Levels, Rev. Page 6 of 26

7 Data Sheet HMC4ALC3B INPUT P1dB (dbm) T A = 4 C INPUT P1dB (dbm) Figure 13. Input P1dB vs. RF Frequency at Various Temperatures, Figure 1. Input P1dB vs. RF Frequency at Various LO Power Levels, T A = 4 C 2 1 Figure 14. Input IP2 vs. RF Frequency at Various Temperatures, Figure 16. Input IP2 vs. RF Frequency at Various LO Power Levels, Rev. Page 7 of 26

8 HMC4ALC3B Data Sheet Lower Sideband (High-Side LO) 1 T A = 4 C 1 Figure 17. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 2. Conversion Gain vs. RF Frequency at Various LO Power Levels, T A = 4 C Figure 18. Input IP3 vs. RF Frequency at Various Temperatures, Figure 21. Input IP3 vs. RF Frequency at Various LO Power Levels, NOISE FIGURE (db) T A = 4 C NOISE FIGURE (db) Figure 19. Noise Figure vs. RF Frequency at Various Temperatures, Figure 22. Noise Figure vs. RF Frequency at Various LO Power Levels, Rev. Page 8 of 26

9 Data Sheet HMC4ALC3B T A = 4 C Figure 23. Input IP2 vs. RF Frequency at Various Temperatures, Figure 24. Input IP2 vs. RF Frequency at Various LO Power Levels, Rev. Page 9 of 26

10 HMC4ALC3B Data Sheet DOWNCONVERTER PERFORMANCE, IF = 3 MHz Upper Sideband (Low-Side LO) 1 T A = 4 C 1 Figure 2. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 28. Conversion Gain vs. RF Frequency at Various LO Power Levels, T A = 4 C Figure 26. Input IP3 vs. RF Frequency at Various Temperatures, Figure 29. Input IP3 vs. RF Frequency at Various LO Power Levels, INPUT P1dB (dbm) T A = 4 C INPUT P1dB (dbm) Figure 27. Input P1dB vs. RF Frequency at Various Temperatures, Figure 3. Input P1dB vs. RF Frequency at Various LO Power Levels, Rev. Page 1 of 26

11 Data Sheet HMC4ALC3B T A = 4 C Figure 31. Input IP2 vs. RF Frequency at Various Temperatures, Figure 32. Input IP2 vs. RF Frequency at Various LO Power Levels, Rev. Page 11 of 26

12 HMC4ALC3B Data Sheet Lower Sideband (High-Side LO) 1 T A = 4 C 1 Figure 33. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 36. Conversion Gain vs. RF Frequency at Various LO Power Levels, T A = 4 C Figure 34. Input IP3 vs. RF Frequency at Various Temperatures, Figure 37. Input IP3 vs. RF Frequency at Various LO Power Levels, T A = 4 C 2 1 Figure 3. Input IP2 vs. RF Frequency at Various LO Power Levels, Figure 38. Input IP2 vs. RF Frequency at Various LO Power Levels, Rev. Page 12 of 26

13 Data Sheet HMC4ALC3B UPCONVERTER PERFORMANCE, IF IN = 1 MHz Upper Sideband (Low-Side LO) 1 T A = 4 C 1 Figure 39. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 42. Conversion Gain vs. RF Frequency at Various LO Power Levels, T A = 4 C Figure 4. Input IP3 vs. RF Frequency at Various Temperatures, Figure 43. Input IP3 vs. RF Frequency at Various LO Power Levels, T A = 4 C 2 INPUT P1dB (dbm) INPUT P1dB (dbm) Figure 41. Input P1dB vs. RF Frequency at Various Temperatures, Figure 44. Input P1dB vs. RF Frequency at Various LO Power Levels, Rev. Page 13 of 26

14 HMC4ALC3B Data Sheet T A = 4 C 2 1 Figure 4. Input IP2 vs. RF Frequency at Various Temperatures, Figure 46. Input IP2 vs. RF Frequency at Various LO Power Levels, Rev. Page 14 of 26

15 Data Sheet HMC4ALC3B Lower Sideband (High-Side LO) 1 T A = 4 C 1 Figure 47. Conversion Gain vs. RF Frequency at Various Temperatures, Figure. Conversion Gain vs. RF Frequency at Various LO Power Levels, T A = 4 C Figure 48. Input IP3 vs. RF Frequency at Various Temperatures, Figure 1. Input IP3 vs. RF Frequency at Various LO Power Levels, T A = 4 C 2 1 Figure 49. Input IP2 vs. RF Frequency at Various Temperatures, Figure 2. Input IP2 vs. RF Frequency at Various LO Power Levels, Rev. Page 1 of 26

16 HMC4ALC3B Data Sheet UPCONVERTER PERFORMANCE, IF IN = 3 MHz Upper Sideband (Low-Side LO) 1 T A = 4 C 1 Figure 3. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 6. Conversion Gain vs. RF Frequency at Various LO Power Levels, T A = 4 C Figure 4. Input IP3 vs. RF Frequency at Various Temperatures, Figure 7. Input IP3 vs. RF Frequency at Various LO Power Levels, T A = 4 C 2 INPUT P1dB (dbm) INPUT P1dB (dbm) Figure. Input P1dB vs. RF Frequency at Various Temperatures, Figure 8. Input P1dB vs. RF Frequency at Various LO Power Levels, Rev. Page 16 of 26

17 Data Sheet HMC4ALC3B T A = 4 C 2 1 Figure 9. Input IP2 vs. RF Frequency at Various Temperatures, Figure 6. Input IP2 vs. RF Frequency at Various LO Power Levels, Rev. Page 17 of 26

18 HMC4ALC3B Data Sheet Lower Sideband (High-Side LO) 1 T A = 4 C 1 Figure 61. Conversion Gain vs. RF Frequency at Various Temperatures, Figure 64. Conversion Gain vs. RF Frequency at Various LO Power Levels, T A = 4 C Figure 62. Input IP3 vs. RF Frequency at Various Temperatures, Figure 6. Input IP3 vs. RF Frequency at Various LO Power Levels, T A = 4 C 2 1 Figure 63. Input IP2 vs. RF Frequency at Various Temperatures, Figure 66. Input IP2 vs. RF Frequency at Various LO Power Levels, Rev. Page 18 of 26

19 Data Sheet HMC4ALC3B ISOLATION AND RETURN LOSS LO TO RF ISOLATION (db) T A = 4 C LO TO RF ISOLATION (db) Figure 67. LO to RF Isolation vs. RF Frequency at Various Temperatures, Figure 7. LO to RF Isolation vs. RF Frequency at Various LO Power levels, LO TO IF ISOLATION (db) T A = 4 C LO TO IF OSILATION (db) (GHz) Figure 68. LO to IF Isolation vs. RF Frequency at Various Temperatures, (GHz) Figure 71. LO to IF Isolation vs. RF Frequency at Various LO Power Levels, RF TO IF ISOLATION (db) T A = 4 C RF TO IF ISOLATION (db) (GHz) Figure 69. RF to IF Isolation vs. RF Frequency at Various Temperatures, Figure 72. RF to IF Isolation vs. RF Frequency at Various LO Power Levels, Rev. Page 19 of 26

20 HMC4ALC3B Data Sheet LO RETURN LOSS (db) IF RETURN LOSS (db) LO FREQUENCY (GHz) Figure 73. LO Return Loss vs. LO Frequency at, IF FREQUENCY Figure 7. IF Return Loss vs. IF Frequency at LO Power Levels,, LO = 1 GHz RF RETURN LOSS (db) Figure 74. RF Return Loss vs. RF Frequency at LO Power Levels,, LO = 1 GHz Rev. Page 2 of 26

21 Data Sheet HMC4ALC3B IF BANDWIDTH DOWNCONVERTER Upper Sideband, LO Frequency = 12 GHz T A = 4 C IF BANDWIDTH Figure 76. Conversion Gain vs. IF Frequency at Various Temperatures, IF BANDWIDTH Figure 78. Conversion Gain vs. IF Frequency at Various LO Power Levels, T A = 4 C IF BANDWIDTH IF BANDWIDTH Figure 77. Input IP3 vs. IF Frequency at Various Temperatures, Figure 79. Input IP3 vs. IF Frequency at Various LO Power Levels, Rev. Page 21 of 26

22 HMC4ALC3B Data Sheet Lower Sideband, LO Frequency = 19 GHz T A = 4 C IF BANDWIDTH Figure 8. Conversion Gain vs. IF Frequency at Various Temperatures, IF BANDWIDTH Figure 82. Conversion Gain vs. IF Frequency at Various LO Power Levels, T A = 4 C IF BANDWIDTH IF BANDWIDTH Figure 81. Input IP3 vs. IF Frequency at Various Temperatures, Figure 83. Input IP3 vs. IF Frequency at Various LO Power Levels, Rev. Page 22 of 26

23 Data Sheet SPURIOUS AND HARMONICS PERFORMANCE Mixer spurious products are measured in dbc from the IF output power level. N/A means not applicable. LO Harmonics, all values in dbc below input LO level and measured at RF port. Table. LO Harmonics at RF N LO Spur at RF Port LO Frequency (GHz) N/A N/A N/A N/A N/A N/A N/A N/A N/A HMC4ALC3B M N Spurious Outputs Downconverter, Upper Sideband Spur values are (M RF) (N LO). RF = 1.1 GHz at 1 dbm, LO = 1 GHz at 13 dbm. N LO N/A N/A N/A N/A M RF N/A N/A N/A Upconverter, Upper Sideband Spur values are (M IF) + (N LO). IFIN = 1 MHz at 1 dbm, LO = 1 GHz at 13 dbm., all values in dbc below input LO level and measured at IF port. Table 6. LO Harmonics at IF N LO Spur at IF Port LO Frequency (GHz) N/A N/A N/A N/A N/A N/A N/A N/A N/A M IF N LO N/A Rev. Page 23 of 26

24 HMC4ALC3B THEORY OF OPERATION The HMC4ALC3B is a general-purpose, double balanced mixer that can be used as an upconverter or a downconverter from 1 GHz to 2 GHZ. When used as a downconverter, the HMC4ALC3B downconverts radio frequencies (RF) between 1 GHz and 2 GHz to intermediate frequencies (IF) between dc and 6 GHz. Data Sheet When used as an upconverter, the mixer upconverts intermediate frequencies between dc and 6 GHz to radio frequencies between 1 GHz and 2 GHz. Rev. Page 24 of 26

25 Data Sheet APPLICATIONS INFORMATION TYPICAL APPLICATION CIRCUIT Figure 84 shows the typical application circuit for the HMC4ALC3B. The HMC4ALC3B is a passive device and does not require any external components. The IF pin is internally dc-coupled. The RF and LO pins are internally ac-coupled. When IF operation to dc is not required, using an external series capacitor is recommended, of a value chosen to pass the necessary IF frequency range. When IF operation to dc is required, do not exceed the IF source and sink current rating specified in the Absolute Maximum Ratings section. LO GND 1 LO 2 GND 3 GND NIC 12 IF NIC 11 NIC HMC4ALC3B 4 GND 1 6 GND 9 RF 8 GND 7 RF HMC4ALC3B EVALUATION PCB INFORMATION Use RF circuit design techniques for the circuit board used in the application. Ensure that signal lines have Ω impedance, and connect the package ground leads and the exposed pad directly to the ground plane (see Figure 84). Use a sufficient number of via holes to connect the top and bottom ground planes. The evaluation circuit board shown in Figure 8 is available from Analog Devices, Inc., upon request. Table 7. List of Materials for Evaluation PCB EV1HMC4ALC3B Item Description J1, J2 PCB mount SRI 2.92 mm connectors J3 PCB mount Johnson SMA connector U1 HMC4ALC3B PCB evaluation board on Rogers is the raw bare PCB identifier. Reference EV1HMC4ALC3B when ordering complete evaluation PCB. IF Figure 84. Typical Application Circuit LO RF J1 4A J2 IF U1 J3 Figure 8. Evaluation PCB Top Layer Rev. Page 2 of 26

26 HMC4ALC3B Data Sheet OUTLINE DIMENSIONS PIN 1 INDICATOR SQ BSC PIN 1. BSC 9 7 EXPOSED PAD SQ 1.4 PKG-4837 SEATING PLANE TOP VIEW SIDE VIEW.32 BSC 6 4 BOTTOM VIEW 1. REF 2.1 BSC FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET A Figure Terminal Ceramic Leadless Chip Carrier (LCC) (E-12-4) Dimensions shown in millimeters ORDERING GUIDE Model 1 Temperature Range MSL Rating 2 Package Description Package Option HMC4ALC3B 4 C to +8 C MSL3 12-Terminal LCC E-12-4 HMC4ALC3BTR 4 C to +8 C MSL3 12-Terminal LCC E-12-4 HMC4ALC3BTR-R 4 C to +8 C MSL3 12-Terminal LCC E-12-4 EV1HMC4ALC3B Evaluation PCB Assembly 1 All models are RoHS compliant. 2 The peak reflow temperature is 26 C. See the Absolute Maximum Ratings section, Table Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D /18() Rev. Page 26 of 26