GaAs, phemt, MMIC, Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049LP5E
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1 ACG ACG ACG FEATURES Low noise figure:. db PdB output power:. dbm PSAT output power: 7. dbm High gain: db Output IP: 9 dbm Supply voltage: VDD = 7 V at 7 ma Ω matched input/output (I/O) -lead, mm mm LFCSP package: mm APPLICATIONS Test instrumentation High linearity microwave radios VSAT and SATCOM Military and space GENERAL DESCRIPTION The is a GaAs MMIC low noise amplifier (LNA) that operates between. GHz and GHz. This LNA provides db of small signal gain,. db noise figure, and an IP output of 9 dbm, yet requires only 7 ma from a 7 V supply. The PdB output power of. dbm enables the LNA to function as a local oscillator (LO) driver for balanced, I/Q, or GaAs, phemt, MMIC, Low Noise Amplifier,. GHz to GHz V DD GND RFIN FUTIONAL BLOCK DIAGRAM V GG Figure. GND RFOUT/V DD 9 7 image rejection mixers. VDD can also be applied to Pin, although Pin requires a bias tee with VDD = V. The amplifier I/Os are internally matched to Ω, and the device is supplied in a compact, leadless mm mm LFCSP package. 79- Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9, Norwood, MA -9, U.S.A. Tel: Analog Devices, Inc. All rights reserved. Technical Support
2 TABLE OF CONTENTS Features... Applications... Functional Block Diagram... General Description... Revision History... Specifications... Absolute Maximum Ratings... ESD Caution... Pin Configuration and Function Descriptions... Interface Schematics... Typical Performance Characteristics...7 Evaluation Printed Circuit Board... Packaging and Ordering Information... Outline Dimensions... Ordering Guide... REVISION HISTORY / Rev. A to Rev. B Changed HMC9 to... Throughout Changes to Features Section and General Description Section. Change to Figure 7 Caption and Figure Caption... Updated Outline Dimensions... Changes to Ordering Guide... / Rev.. to Rev. A This Hittite Microwave Products data sheet has been reformatted to meet the styles and standards of Analog Devices, Inc. Updated Format... Universal Changes to General Description... Change to Table, Thermal Resistance Parameter Column... Added Figure... Changes to Table... Moved Figure to Figure 9 to Interface Schematics Section... Change to Figure and Figure 9... Changes to Figure... Added Ordering Guide Section... Rev. B Page of
3 SPECIFICATIONS TA = C, VDD = 7 V, IDD = 7 ma. Table. Parameter Min Typ Max Min Typ Max Min Typ Max Unit FREQUEY RANGE. GHz GAIN.. db Gain Variation Over Temperature..9.7 db/ C NOISE FIGURE db RETURN LOSS Input db Output db OUTPUT Output Power for db Compression (PdB). dbm Saturated (PSAT) 7. dbm Output Third-Order Intercept (IP) 9 dbm TOTAL SUPPLY CURRENT ma Adjust VGG between V to V to achieve IDD = 7 ma typical. Measurement taken at POUT/tone = dbm. Rev. B Page of
4 ABSOLUTE MAXIMUM RATINGS Table. Parameter Rating Drain Bias Voltage (VDD) V Drain Bias Voltage (RF Out/VDD) 7 V RF Input Power dbm Gate Bias Voltage, VGG V to +. V Channel Temperature 7 C Continuous PDISS (T = C). W (Derate 7. mw/ C Above C) Thermal Resistance (Channel to Ground.9 C/W Paddle) Temperature Storage Temperature C to + C Operating Temperature C to + C ESD Sensitivity (HBM) Class A Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Table. Typical Supply Current vs. VDD VDD (V) IDD (ma) Adjust VGG to achieve IDD = 7 ma. ESD CAUTION Rev. B Page of
5 PIN CONFIGURATION AND FUTION DESCRIPTIONS GND RFIN V GG ACG ACG ACG V DD 7 GND RFOUT/V DD TOP VIEW (Not to Scale) NOTES. = NO CONNECT. THESE PINS ARE NOT CONNECTED INTERNALLY; HOWEVER, ALL DATA WAS MEASURED WITH THESE PINS CONNECTED TO RF/DC GROUND EXTERNALLY.. EXPOSED PAD. THE EXPOSED GROUND PADDLE MUST BE CONNECTED TO RF/DC GROUND. Figure. Pin Configuration Diagram 79- Table. Pin Function Descriptions Pin No. Mnemonic Description,, to,, 7 to, to 9,, No Connect. These pins are not connected internally; however, all data was measured with these pins connected to RF/dc ground externally (see the Typical Performance Characteristics section for data plots). RFIN RF Input. This pin is dc-coupled and matched to Ω. VDD Power Supply Voltage for the Amplifier. External bypass capacitors ( pf and. μf) are required. ACG Low Frequency Termination. An external bypass capacitor of pf is required. RFOUT/VDD RF Output/Alternate Power Supply Voltage for the Amplifier. An external bias tee is required when used as alternative VDD. This pin is dc-coupled and matched to Ω., ACG, Low Frequency Termination. External bypass capacitors of pf are required. ACG VGG Gate Control for Amplifier. Adjust the voltage to achieve IDD = 7 ma. External bypass capacitors of pf,. μf, and.7μf are required., GND Ground. Connect Pin and Pin to RF/dc ground. EP Exposed Pad. The exposed ground paddle must be connected to RF/dc ground. See the Interface Schematics section for pin interfaces. Rev. B Page of
6 INTERFACE SCHEMATICS V DD RFIN ACG 79- Figure. VDD Interface ACG Figure 7. ACG and ACG Interface 79-9 GND RFOUT/V DD Figure. RFOUT/VDD Interface Figure. GND Interface ACG RFOUT/V DD RFIN ACG Figure 9. ACG Interface Figure. RFIN Interface V GG 79- Figure. VGG Interface Rev. B Page of
7 TYPICAL PERFORMAE CHARACTERISTICS Data taken with VDD applied to Pin, VDD = 7 V. S S S T A = + C T A = + C T A = C RESPONSE (db) RETURN LOSS (db) FREQUEY (GHz) 79- FREQUEY (GHz) 79-9 Figure. Broadband Gain and Return Loss Figure. Output Return Loss vs. Temperature T A = + C T A = + C T A = C T A = + C T A = + C T A = C GAIN (db) NOISE FIGURE (db) FREQUEY (GHz) Figure. Gain vs. Temperature 79-7 FREQUEY (GHz) Figure. Noise Figure vs. Temperature 79- T A = + C T A = + C T A = C T A = + C T A = + C T A = C RETURN LOSS (db) NOISE FIGURE (db) FREQUEY (GHz) FREQUEY (GHz) 79- Figure. Input Return Loss vs. Temperature Figure. Noise Figure vs. Temperature, Low Frequency Rev. B Page 7 of
8 V DD = V V DD = 7V V DD = V 7 T A = + C T A = + C T A = C NOISE FIGURE (db) PdB (dbm) FREQUEY (GHz) Figure. Noise Figure vs. VDD 79- FREQUEY (GHz) Figure 9. PdB vs. Temperature 79- I DD = ma I DD = 7mA I DD = ma T A = + C T A = + C T A = C NOISE FIGURE (db) P SAT (dbm) 7 FREQUEY (GHz) Figure 7. Noise Figure vs. IDD 79- FREQUEY (GHz) Figure. PSAT vs. Temperature 79- T A = + C T A = + C T A = C V DD = V V DD = V V DD = 7V IP (dbm) PdB (dbm) FREQUEY (GHz) 79- FREQUEY (GHz) 79-7 Figure. Output IP vs. Temperature Figure. PdB vs. VDD Rev. B Page of
9 P SAT (dbm) FREQUEY (GHz) V DD = V V DD = V V DD = 7V 79- P OUT (dbm), GAIN (db), PAE (%) GAIN P OUT PAE INPUT POWER (dbm) 79- Figure. PSAT vs. VDD Figure. Power Compression at GHz ISOLATION (db) FREQUEY (GHz) T A = + C T A = + C T A = C 79-9 P OUT (dbm), GAIN (db), PAE (%) GAIN P OUT PAE INPUT POWER (dbm) 79- Figure. Reverse Isolation vs. Temperature Figure. Power Compression at GHz Rev. B Page 9 of
10 P OUT (dbm), GAIN (db), PAE (%) GAIN P OUT PAE 9 9 INPUT POWER (dbm) 79- GAIN (db), P SAT (dbm) GAIN P SAT NOISE FIGURE 7 I DD (ma) NOISE FIGURE (db) 79- Figure. Power Compression at GHz Figure. Gain, PSAT, and Noise Figure vs. IDD at GHz GAIN (db), P SAT (dbm) NOISE FIGURE (db) GAIN P SAT NOISE FIGURE V DD (V) Figure 7. Gain, PSAT, and Noise Figure vs. VDD at GHz 79- Rev. B Page of
11 Data taken with VDD applied to the bias tee at Pin. S S S T A = + C T A = + C T A = C RESPONSE (db) IP (dbm) FREQUEY (GHz) Figure 9. Broadband Gain and Return Loss, VDD = V, Supply to Bias Tee 79- FREQUEY (GHz) Figure. Output IP vs. Temperature, VDD = V, Supply to Bias Tee 79- T A = + C T A = + C T A = C 7 T A = + C T A = + C T A = C GAIN (db) PdB (dbm) FREQUEY (GHz) Figure. Gain vs. Temperature, VDD = V, Supply to Bias Tee 79- FREQUEY (GHz) Figure. PdB vs. Temperature, VDD = V, Supply to Bias Tee 79-9 T A = + C T A = + C T A = C T A = + C T A = + C T A = C NOISE FIGURE (db) P SAT (dbm) FREQUEY (GHz) Figure. Noise Figure vs. Temperature, VDD = V, Supply to Bias Tee 79-7 FREQUEY (GHz) Figure. PSAT vs. Temperature, VDD = V, Supply to Bias Tee 79- Rev. B Page of
12 EVALUATION PRINTED CIRCUIT BOARD J J J IN C V DD C C --- OUT U J C U C C H9 XXXX C C7 V GG J J 79- C9 Figure. Evaluation Board Layout C pf 9 7 J C.7µF + V DD C nf C pf V DD GND ACG RFOUT/V DD OUT J J IN RFIN 9 7 V GG ACG ACG 7 9 J C9.7µF + C nf C pf PACKAGE BASE GND C pf C7 nf 79- Figure. Evaluation Board Schematic Rev. B Page of
13 Table. List of Materials for Evaluation PCB Item Description J, J, J, J PCB mount SMA RF connector J, J DC pins C to C pf capacitor, package C to C7 pf capacitor, package C, C9.7 μf capacitor, tantalum U PCB --- evaluation PCB The circuit board used in the application should use RF circuit design techniques. Signal lines should have Ω impedance; connect the package ground leads and exposed paddle directly to the ground plane. Use a sufficient number of via holes to connect the top and bottom ground planes. The evaluation circuit board shown is available from Analog Devices, Inc., upon request. Circuit board material: Rogers or Arlon FR. Rev. B Page of
14 PACKAGING AND ORDERING INFORMATION OUTLINE DIMENSIONS DETAIL A (JEDEC 9) PIN INDICATOR.. SQ.9. BSC... EXPOSED PAD PIN INDIC ATOR AREA OPTIONS (SEE DETAIL A)..7 SQ..9.. SEATING PLANE TOP VIEW MAX. NOM COPLANARITY.. REF BOTTOM VIEW. REF 9. MIN FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUTION DESCRIPTIONS SECTION OF THIS DATA SHEET. PKG-9 COMPLIANT TO JEDEC STANDARDS MO--VHHD-. Figure 7. -Lead Lead Frame Chip Scale Package [LFCSP] mm mm and. mm Package Height (HCP--) Dimensions shown in millimeters ORDERING GUIDE Model Temperature Range Lead Finish Moisture Sensitivity Level (MSL) Rating Package Description Ordering Quantity Package Option C to + C % matte Sn MSL -Lead LFCSP HCP-- TR C to + C % matte Sn MSL -Lead LFCSP, HCP-- 7 Tape and Reel EVAL-HMC9LP Evaluation Board -9-7-B All models are RoHS Compliant Parts. MSL rating indicates a maximum peak reflow temperature of C. Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D79--/(B) Rev. B Page of
GaAs phemt MMIC Low Noise Amplifier, 0.3 GHz to 20 GHz HMC1049
ACG ACG ACG FEATURES Low noise figure:. db PdB output power:. dbm PSAT output power: 7. dbm High gain: db Output IP: 9 dbm Supply voltage: VDD = 7 V at 7 ma Ω matched input/output (I/O) -lead mm mm SMT
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v.11 HMC6LC AMPLIFIER, 6-2 GHz Typical Applications The HMC6LC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military
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9 13 16 FEATURES High saturated output power (PSAT): 41.5 dbm typical High small signal gain: db typical High power gain for saturated output power:.5 db typical Bandwidth: 2.7 GHz to 3.8 GHz High power
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v2.61 Typical Applications This is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation Functional Diagram Features Low Noise Figure: 2. db High Gain: 22 db
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More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v3.38 POWER AMPLIFIER, 2-2 GHz Typical
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More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v1.14 AMPLIFIER, 18-4 GHz Typical
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More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
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More informationHigh Isolation, Silicon SP4T, Nonreflective Switch, 9 khz to 12.0 GHz ADRF5040
RF4 RF3 7 8 9 1 11 12 21 2 19 RF2 High Isolation, Silicon SP4T, Nonreflective Switch, 9 khz to 12. GHz ADRF54 FEATURES FUNCTIONAL BLOCK DIAGRAM Nonreflective 5 Ω design Positive control range: V to 3.3
More informationFeatures. = +25 C, Vdd = +7V, Idd = 1340 ma [1]
Typical Applications The HMC591LP5 / HMC591LP5E is ideal for use as a power amplifi er for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Sensors Military End-Use Space Features Saturated
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v1.414 Typical Applications The HMC5846LS6
More information20 GHz to 44 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC1040CHIPS
Data Sheet FEATURES Low noise figure: 2 db typical High gain: 25. db typical P1dB output power: 13.5 dbm, 2 GHz to GHz High output IP3: 25.5 dbm typical Die size: 1.39 mm 1..2 mm APPLICATIONS Software
More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v.51 HMC7LP5E POWER AMPLIFIER,.2
More informationGaAs, MMIC Fundamental Mixer, 2.5 GHz to 7.0 GHz HMC557A
FEATURES Conversion loss: db LO to RF isolation: db LO to IF isolation: 3 db Input third-order intercept (IP3): 1 dbm Input second-order intercept (IP2): dbm LO port return loss: dbm RF port return loss:
More informationParameter Frequency Min. Typ. Max. Units GHz GHz Attenuation Range GHz 31.5 db
v.37. db LSB GaAs MMIC 6-BIT DIGITAL POSITIVE CONTROL ATTENUATOR,. - 8. GHz Typical Applications Features ATTENUATORS - SMT The HMCALP3E is ideal for: WLAN & Point-to-Multi-Point Fiber Optics & Broadband
More informationFeatures. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V
Typical Applications The HMC77ALP3E is ideal for: Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points Functional Diagram Features Noise Figure:.
More information10 GHz to 20 GHz, GaAs, MMIC, Double Balanced Mixer HMC554ALC3B
Data Sheet FEATURES Conversion loss: 8. db LO to RF Isolation: 37 db Input IP3: 2 dbm RoHS compliant, 2.9 mm 2.9 mm, 12-terminal LCC package APPLICATIONS Microwave and very small aperture terminal (VSAT)
More information8.5 GHz to 13.5 GHz, GaAs, MMIC, I/Q Mixer HMC521ALC4
11 7 8 9 FEATURES Downconverter, 8. GHz to 13. GHz Conversion loss: 9 db typical Image rejection: 27. dbc typical LO to RF isolation: 39 db typical Input IP3: 16 dbm typical Wide IF bandwidth: dc to 3.
More informationDC to 1000 MHz IF Gain Block ADL5530
Data Sheet FEATURES Fixed gain of 16. db Operation up to MHz 37 dbm Output Third-Order Intercept (OIP3) 3 db noise figure Input/output internally matched to Ω Stable temperature and power supply 3 V or
More informationFeatures. = +25 C, 50 Ohm system
HMC12ALC4 Typical Applications v7.617 ATTENUATOR, 5-3 GHz Features The HMC12ALC4 is ideal for: Point-to-Point Radio VSAT Radio Test Instrumentation Microwave Sensors Military, ECM & Radar Functional Diagram
More information21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter HMC815B
Data Sheet 1 GHz to 7 GHz, GaAs, MMIC, I/Q Upconverter HMC1B FEATURES Conversion gain: db typical Sideband rejection: dbc typical OP1dB compression: dbm typical OIP3: 7 dbm typical LO to RF isolation:
More informationNonreflective, Silicon SP4T Switch, 0.1 GHz to 6.0 GHz HMC7992
Nonreflective, Silicon SP4T Switch,.1 GHz to 6. GHz FEATURES Nonreflective, 5 Ω design High isolation: 45 db typical at 2 GHz Low insertion loss:.6 db at 2 GHz High power handling 33 dbm through path 27
More informationFeatures. = +25 C, Vdd = 5V, Vgg1 = Vgg2 = Open
v3.117 HMC441LM1 Typical Applications The HMC441LM1 is a medium PA for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT LO Driver for HMC Mixers Military EW & ECM Functional Diagram Vgg1, Vgg2:
More informationHigh Isolation, Silicon SPDT, Nonreflective Switch, 0.1 GHz to 6.0 GHz HMC8038W
5 6 7 8 6 5 4 3 FEATURES Nonreflective, 50 Ω design High isolation: 60 db typical Low insertion loss: 0.8 db typical High power handling 34 dbm through path 29 dbm terminated path High linearity P0.dB:
More informationFeatures OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
More informationGaAs, phemt, MMIC, Power Amplifier, HMC1126. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION
Data Sheet GaAs, phemt, MMIC, Power Amplifier, GHz to GHz FEATURES FUNCTIONAL BLOCK DIAGRAM Output power for 1 db compression (P1dB): 1. db typical Saturated output power (PSAT): 1 dbm typical Gain: 11
More informationHMC662LP3E POWER DETECTORS - SMT. 54 db, LOGARITHMIC DETECTOR, 8-30 GHz. Typical Applications. Features. Functional Diagram. General Description
Typical Applications The is ideal for: Point-to-Point Microwave Radio VSAT Wideband Power Monitoring Receiver Signal Strength Indication (RSSI) Test & Measurement Functional Diagram Features Wide Input
More informationFeatures OBSOLETE. Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) dbm Supply Current (Idd) ma
7 Typical Applications The HMC667LP2(E) is ideal for: WiMAX, WiBro & Fixed Wireless SDARS & WLAN Receivers Infrastructure & Repeaters Access Points Telematics & DMB Functional Diagram v2.11 Electrical
More informationOBSOLETE. = +25 C, Vdd = Vs= +5V, Vctl= 0/ +5V. Parameter Frequency Min. Typ. Max. Units DC GHz 37. db Gain (Maximum Gain State)
v.1212.5 db LSB GaAs MMIC 6-BIT DIGITAL Typical Applications The is ideal for: IF & RF Applications Cellular/3G Infrastructure WiBro / WiMAX / 4G Microwave Radio & VSAT Test Equipment and Sensors Functional
More information20 MHz to 500 MHz IF Gain Block ADL5531
20 MHz to 500 MHz IF Gain Block ADL5531 FEATURES Fixed gain of 20 db Operation up to 500 MHz Input/output internally matched to 50 Ω Integrated bias control circuit Output IP3 41 dbm at 70 MHz 39 dbm at
More information5.5 GHz to 14 GHz, GaAs MMIC Fundamental Mixer HMC558A. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION
FEATURES Conversion loss: 7.5 db typical at 5.5 GHz to 1 GHz Local oscillator (LO) to radio frequency (RF) isolation: 45 db typical at 5.5 GHz to 1 GHz LO to intermediate frequency (IF) isolation: 45 db
More informationFeatures. = +25 C, Vs = +5V. Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range MHz Gain
Typical Applications Functional Diagram The HMC32LP3 / HMC32LP3E is ideal for basestation receivers: GSM, GPRS & EDGE CDMA & W-CDMA Private Land Mobile Radio HMC32LP3 / 32LP3E AMPLIFIER, 00-1000 MHz Features
More information6 GHz to 10 GHz, GaAs, MMIC, I/Q Mixer HMC520A
11 7 8 9 FEATURES Radio frequency (RF) range: 6 GHz to 1 GHz Local oscillator (LO) input frequency range: 6 GHz to 1 GHz Conversion loss: 8 db typical at 6 GHz to 1 GHz Image rejection: 23 dbc typical
More informationGaAs, phemt, MMIC, Power Amplifier, 2 GHz to 50 GHz HMC1126
GaAs, phemt, MMIC, Power Amplifier, 2 GHz to GHz FEATURES FUNCTIONAL BLOCK DIAGRAM Output power for 1 db compression (P1dB): 1. db typical Saturated output power (PSAT): dbm typical Gain: 11 db typical
More informationFeatures OBSOLETE. = +25 C, as a function of Vdd. Vdd = +3V Vdd = +5V Vdd = +5V Vdd = +5V Parameter
v5.117 HMC3 / 3E GENERAL PURPOSE 1 mw GaAs MMIC AMPLIFIER,. - 3. GHz Typical Applications Broadband or Narrow Band Applications: Cellular/PCS/3G Fixed Wireless & Telematics Cable Modem Termination Systems
More informationFeatures. = +25 C, Vdd= 8V, Idd= 75 ma*
HMC46LC5 Typical Applications v3.11 AMPLIFIER, DC - 2 GHz Features The HMC46LC5 is ideal for: Noise Figure: 2.5 db @ 1 GHz Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation
More informationDC to 1000 MHz IF Gain Block ADL5530
DC to MHz IF Gain Block ADL3 FEATURES Fixed gain of 6. db Operation up to MHz 37 dbm Output Third-Order Intercept (OIP3) 3 db noise figure Input/output internally matched to Ω Stable temperature and power
More informationFeatures. = +25 C, Vdd = +5V, 5 dbm Drive Level
v1.4 Typical Applications The HMC561LP3E are suitable for: Clock Generation Applications: SONET OC-192 & SDH STM-64 Point-to-Point & VSAT Radios Test Instrumentation Military & Space Functional Diagram
More informationFeatures. = +25 C, 50 Ohm system. DC - 10GHz DC - 14 Ghz DC - 10 GHz DC - 14 GHz Return Loss DC - 14 GHz 5 10 db
Typical Applications v2.717 Features The is ideal for: Basestation Infrastructure Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar, & ECM Test Instrumentation Functional Diagram
More informationFeatures
HMC37SC7E v1.1.3-3. GHz Typical Applications The HMC37SC7E is ideal for: Cellular/PCS/3G WCS, mmds & ism Fixed Wireless & WLAN Private Land Mobile Radio Functional Diagram Features Single Supply: Vdd =
More informationFeatures. DC GHz GHz GHz DC GHz GHz GHz GHz DC - 4 GHz GHz Supply Current (Icq) ma
HMC311ST9 / 311ST9E v.17 MMIC AMPLIFIER, DC - GHz Typical Applications The HMC311ST9(E) is ideal for: Cellular / PCS / 3G Fixed Wireless & WLAN CATV & Cable Modem Microwave Radio Functional Diagram Features
More informationFeatures. = +25 C, With 0/+5V Control, 50 Ohm System
Typical Applications This switch is suitable for usage in 50-Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz Functional Diagram Features Broadband Performance:
More information20 MHz to 6 GHz RF/IF Gain Block ADL5542
FEATURES Fixed gain of db Operation up to 6 GHz Input/output internally matched to Ω Integrated bias control circuit Output IP3 46 dbm at MHz 4 dbm at 9 MHz Output 1 db compression:.6 db at 9 MHz Noise
More information4 GHz to 8.5 GHz, GaAs, MMIC, I/Q Mixer HMC525ALC4
Data Sheet FEATURES Passive: no dc bias required Conversion loss: 8 db (typical) Input IP3: 2 dbm (typical) LO to RF isolation: 47 db (typical) IF frequency range: dc to 3. GHz RoHS compliant, 24-terminal,
More informationFeatures. = +25 C, Vdd = +5V, Rbias = 10 Ohms*
Typical Applications Functional Diagram The HMC36LP3 / HMC36LP3E is ideal for: Cellular/3G Infrastructure Base Stations & Repeaters CDMA, W-CDMA, & TD-SCDMA Private Land Mobile Radio GSM/GPRS & EDGE UHF
More informationHMC629ALP4E. 3 db LSB GaAs MMIC 4-BIT DIGITAL ATTENUATOR, DC - 10GHz. Typical Applications. Functional Diagram. General Description
v1.716 DIGITAL ATTENUATOR, DC - 1GHz Typical Applications The is ideal for: Cellular/3G Infrastructure WiBro / WiMAX / 4G Microwave Radio & VSAT Test Equipment and Sensors IF & RF Applications Functional
More information2 GHz to 30 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC8402
2 GHz to 3 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC842 FEATURES Output power for 1 db compression (P1dB): 21. dbm typical Saturated output power (PSAT): 22 dbm typical Gain: 13. db typical Noise
More informationFeatures. = +25 C, 50 Ohm system
v6.312 Typical Applications Features The E is ideal for: Point-to-Point Radio VSAT Radio Test Instrumentation Microwave Sensors Military, ECM & Radar Functional Diagram Wide Bandwidth: 5-26.5 GHz Excellent
More information400 MHz to 4000 MHz Low Noise Amplifier ADL5523
FEATURES Operation from MHz to MHz Noise figure of. db at 9 MHz Requires few external components Integrated active bias control circuit Integrated dc blocking capacitors Adjustable bias for low power applications
More informationFeatures. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz GHz. Attenuation Range GHz 15.
v.6.5 LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR,. - 33 GHz Typical Applications Features The is ideal for: Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar & ECM Space Applications
More information50 MHz to 4.0 GHz RF/IF Gain Block ADL5602
Data Sheet FEATURES Fixed gain of 20 db Operation from 50 MHz to 4.0 GHz Highest dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 42.0 dbm at 2.0
More informationHigh Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz HMC349AMS8G
Data Sheet High Isolation, Nonreflective, GaAs, SPDT Switch,1 MHz to 4 GHz FEATURES Nonreflective, 5 Ω design High isolation: 57 db to 2 GHz Low insertion loss:.9 db to 2 GHz High input linearity 1 db
More information30 MHz to 6 GHz RF/IF Gain Block ADL5611
Preliminary Technical Data FEATURES Fixed gain of 22.1 db Broad operation from 30 MHz to 6 GHz High dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3
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