GENERAL PURPOSE DUAL-GATE GaAs MESFET

Transcription

1 GENERAL PURPOSE DUAL-GATE GaAs MESFET NE2339 FEATU SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS:.2 pf (TYP) 2 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE VGS = 1 V, IDS = 1 ma, f = 9 MHz 1 HIGH : 2 db (TYP) AT 9 MHz LOW : 1.1 db TYP AT 9 MHz LG1 = 1. µm, LG2 = 1. µm, WG = 8 µm ION IMPLANTATION AVAILABLE IN TAPE & REEL OR BULK Power Gain, (db) 1 Noise Figure, (db) DESCRIPTION The NE23 is an 8 µm dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. This device is available in a mini-mold (surface mount) package. 1 Drain to Source Voltage, VDS (V) ELECTRICAL CHARACTERISTICS (TA = 2 C) PART NUMBER NE2339 PACKAGE OUTLINE 39 SYMBOL PARAMETERS AND CONDITIONS UNITS MIN TYP MAX Noise Figure at, VG2S = 1 V, ID = 1 ma, f = 9 MHz db Power Gain at, VG2S = 1 V, IDS = 1 ma, f = 9 MHz db 16 2 BVDSX Drain to Source Breakdown Voltage at VG1S = -4 V, VG2S =, IDS = 2 µa V 1 IDSS Saturated Drain Current at, VG2S = V, VG1S = V ma VG1S (OFF) Gate 1 to Source Cutoff Voltage at, VG2S = V, ID = 1 µa V -3. VG2S (OFF) Gate 2 to Source Cutoff Voltage at, VG1S = V, ID = 1 µa V -3. IG1SS Gate 1 Reverse Current at VDS =, VG1S = -4V, VG2S = µa 1 IG2SS Gate 2 Reverse Current at VDS =. VG2S = -4V, VG1S = µa 1 YFS Forward Transfer Admittance at, VG2S = 1 V, IDS = 1 ma, f = 1. khz ms 2 3 CISS Input Capacitance at, VG2S = 1 V, ID = 1 ma, f = 1 MHz pf CRSS Reverse Transfer Capacitance at, VG2S = 1 V, IDS = 1 ma, f = 1 MHz pf.2.3 California Eastern Laboratories

2 ABSOLUTE MAXIMUM RATINGS 1 (TA = 2 C) SYMBOLS PARAMETERS UNITS RATINGS VDSX Drain to Source Voltage V 1 VG1S Gate 1 to Source Voltage V -4. VG2S Gate 2 to Source Voltage V -4. ID Drain Current ma 8 TCH Channel Temperature C 12 TSTG Storage Temperature C - to +12 PT Total Power Dissipation mw 2 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 2 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. GATE 1 TO SOURCE VOLTAGE Total Power Dissipation, PT (mw) FREE AIR Drain Current, ID (ma) 1 VG2S = 1 V. V V -. V -1. V Ambient Temperature, TA ( C) Gate 1 to Source Voltage, VG1S (V) Forward Transfer Admittance, YFS ms 8 4 FORWARD TRANSFER ADMITTANCE vs. GATE 1 TO SOURCE VOLTAGE f = 1 khz VG2S = 1 V. V -. V Forward Transfer Admittance, YFS ms 8 4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT -. V V f = 1kHz. V VGS2 = 1 V 1 Gate 1 to Source Voltage, VG1S (V) Drain Current, ID (ma)

3 TYPICAL PERFORMANCE CURVES (TA = 2 C) 2. INPUT ACITANCE vs. GATE 2 TO SOURCE VOLTAGE 3 POWER GAIN AND NOISE FIGURE vs. GATE 2 TO SOURCE VOLTAGE 1 Input Capacitance, CISS (pf) 1. VG1S = 1 V at ID = ma VG1S = 1 V at ID = ma Power Gain, (db) Noise Figure, (db) f = 1 khz Gate 2 to Source Voltage, VG2S (V) Gate 2 to Source Voltage, VG2S (V) POWER GAIN AND NOISE FIGURE vs. DRAIN CURRENT Power Gain, (db) 1 1 VG2S = 1 V f = 9 MHz Noise Figure, (db) 1 Drain Current, ID (ma) TEST CIRCUIT DIAGRAM 9 MHz and TEST CIRCUIT VG2S (1 V) 1pF 47 kω UP TO 1 pf 1 pf G2 D UP TO 1 pf INPUT Ω L1 UP TO 1 pf 47 kω G1 S UP TO 1 pf L2 RFC OUTPUT Ω 1pF 1pF L1, L2, 3 X X.2 mm Note: IDS = 1 ma VG1S VDD ( V)

4 NONLINEAR MODEL UNITS FOR MODEL PARAMETERS Parameter Units time capacitance inductance resistance voltage current seconds farads henries ohms volts amps FET NONLINEAR MODEL PARAMETERS (1) Parameters FET1 FET2 Parameters FET1 FET2 UGW 1e-6 1e-6 IDSOC.7.7 NGF 4 4 RDB 1.e9 1.e9 IS 8.78e e-1 CBS.16e-12.16e-12 N GDBM.3 RG KDB RD VDSM 1 1 RS GMMAXAC RIS GAMMAAC.6.6 RID KAPAAC.9.9 TAU 1.e-12 1.e-12 PEFFAC CDSO.e-1.e-1 VTOAC C11O.2e-12.e-12 VTSOAC -1-1 C11TH.1e-12.1e-12 VDELTAC 3 3 VIL GMMAX DELTGS GAMMA..6 DELTDS 1.1 KAPA.8.26 LAMBDA.2.2 PEFF C11DELT VTO -2-2 C12O VTSO -1-1 C12SAT.1e-12.1e-12 VDELT CGDSAT 1.e-1 1.e-1 VCH 1 1 KBK.3.3 VSAT 3 3 VBR VGO NBR 2 2 VDSO 3 3 (1) Libra EEFET3 Model

5 SCHEMATIC CpkgG2D C =.1 Ld L = 1.3e-2 Pdrain port = 2 Cg2d C =.1 Rd R = 4. P1 port = 3 Lg2 L = 2. Rg2 R =.2 EEFET3 FET2 UGW=8 N=4 FILE=72 m_t.mdif MODE=nonlinear CpkgDS C =.21 CpkgG1G2 C =.21 Cg1d C = 4.3e-2 R12 R =.1 Pgate1 port = 1 Lg1 L = 1.e-2 Rg1 R =.2 EEFET3 FET1 UGW=8 N=4 FILE=72 m_b.mdif MODE=nonlinear Cg1s C = 1.e-2 Rs R =.3 Cg2s C =.2 Ls L = 3 UNITS CpkgG1S C =.1 Parameter Units capacitance picofarads inductance nanohenries resistance ohms P4 port = 4 NOTES: 1. This UGW value scales the model parameters on page This N value is the number of gate fingers and scales the model parameters on page 1. Frequency: Bias:.1 to 1. GHz VDS = 3 V, Vg1s= -1.4 V, Vg2s= 1 V, ID = 3 ma

6 OUTLINE DIMENSIONS (Units in mm) OUTLINE 39 (SOT-143) (LEADS 2, 3, 4) ORDERING IORMATION PART AVAILABILITY IDSS RANGE MARKING NUMBER (ma) NE2339 Bulk up to 3 K NE2339-T1 3K/Reel ± Source 2. Drain 3. Gate 2 4. Gate to EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 49 Patrick Henry Drive Santa Clara, CA (48) Telex FAX (48) Hour Fax-On-Demand: (U.S. and Canada only) Internet: DATA SUBJECT TO CHANGE WITHOUT NOTICE 8/98