3 V SUPER MINIMOLD L-BAND SI MMIC DOWNCONVERTER

Transcription

1 V SUPER MINIMOLD L-BAND SI MMIC DOWNCONVERTER FEATURES HIGH DENSITY SURFACE MOUNTING: Pin Super Minimold or SOT- package WIDE BAND OPERATION: RF =. to. GHz IF = to MHz ON BOARD OSCILLATOR SUPPLY VOLTAGE: =.7 TO. V DESCRIPTION NEC's is a silicon MMIC integrated circuit manufactured using the NESAT III process. The device consists of a double balance mixer, an IF amplifier and a built-in LO. this device is suitable as a L-BAND downconverter for the receiver stage of wireless systems. The is pin compatible and has comparable performance as the larger UPC7T, so it is suitable for use as a replacement to help reduce system size. The IC housed in a pin super minimold or SOT- package. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. INTERNAL BLOCK DIAGRAM RF Input LO LO GND IF Output ELECTRICAL CHARACTERISTICS (TA = C, Vcc = V, ZL = Zs = Ω) PART NUMBER PACKAGE OUTLINE S SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICC Circuit Current (no signal) ma.. 8. frf RF Frequency Response ( db down from the gain at frf = 9 MHz, fif = MHz) GHz.. fif IF Frequency Response ( db down from the gain at frf = 9 MHz, fif = MHz) MHz CG Conversion Gain frf = 9 MHz, fif = MHz db 7 frf =. GHz, fif = MHz db 7 NF Noise Figure frf = 9 MHz, fif = MHz db frf =. GHz, fif = MHz db PSAT Saturated Output Power frf = 9 MHz, fif = MHz dbm - -8 frf =. GHz, fif = MHz dbm - - OIP SSB Output rd Order Intercept Point frf =.8~. GHz, fif = MHz dbm + ISO LO Leakage, flo =.8 ~. GHz at RF pin dbm - at IF pin dbm - PN Phase Noise, fosc =.9 GHz dbc/hz -8 RTH (J-A) Thermal Resistance (Junction to Ambient) Mounted on a x x. mm epoxy glass PWB C/W Notes:. PRF = - dbm.. PRF = - dbm.. See Application Circuit. California Eastern Laboratories

2 ABSOLUTE MAXIMUM RATINGS (TA = C) SYMBOLS PARAMETERS UNITS RATINGS Supply Voltage V. PT Total Power Dissipation mw TOP Operating Temperature C - to +8 TSTG Storage Temperature C - to + Notes:. Operation in excess of any one of these parameters may result in permanent damage.. Mounted on a x x. mm epoxy glass PWB (TA = +8 C). PIN FUNCTIONS RECOMMENDED OPERATING CONDITIONS SYMBOLS PARAMETERS UNITS MIN TYP MAX Supply Voltage V.7.. TOP Operating Temperature C TEST CIRCUIT C RF INPUT C LO LO GND RFIN IFOUT C V C C LO INPUT IF OUTPUT Pin No. Symbol Applied Voltage (V) Pin Voltage (V) Description Internal Equivalent Circuit RFIN. Signal input pin to double balancec mixer. This pin must be coupled to the signal source with a blocking capacitor. GND Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. LO. These pins are both the basecollectors of a differential amplifier configured to oscillate when equipped with an external tank resonator circuit. Each pin must be coupled to the tank circuit with a blocking capacitor. In the case of an external LO source, bypass the unused pin with a capacitor to ground. LO..7 to. Power supply pin. This pin should be externally equipped with a bypass capacitor to minimize ground impedance. IFOUT.7 Output of single-ended push-pull IF buffer amplifier. This is an emitter-follower output with low impedance. This pin must be coupled to the next stage with a blocking capacitor.

3 TYPICAL PERFORMANCE CURVES (TA = C) CIRCUIT CURRENT vs. VOLTAGE CIRCUIT CURRENT vs. TEMPERATURE Circuit Current, Icc (ma) 8 No input signal Circuit Current, Icc (ma) 8 No input signal =.V Supply Voltage, Vcc (V) Operating Temperature, TOP ( C) CONVERSION GAIN AND NOISE FIGURE vs. RF INPUT FREQUENCY CONVERSION GAIN vs. IF OUTPUT FREQUENCY Conversion Gain, CG (db) PRFin = - dbm PLOin = - dbm fif = MHZ (Low-Side Lo) =.V CG =.V NF =.7V =.7V =.V =.V.... Conversion Gain, CG (db) =.V PRFin = - dbm PLOin = - dbm frf =. GHz RF Input Frequency, frf (GHz) IF Output Frequency, fif (GHz) LO LEAKAGE AT RF PIN vs. LO FREQUENCY LO LEAKAGE AT IF PIN vs. LO FREQUENCY LO Leakage at RF Input Pin (dbm) =. V PLOIN = - dbm LO Leakage at IF Output Pin (dbm) =.V PLOIN = - dbm LO Input Frequency, flo (GHz) LO Input Frequency (GHz)

4 TYPICAL PERFORMANCE CURVES (TA = C) IF Output Level, PIFOUT (dbm) rd Order Intermodulation Distortion, IM (dbm) IF OUTPUT LEVEL AND IM vs. RF INPUT LEVEL frf = 9 MHz frf = 9 MHz flo = 8 MHz =. V RF Input Level, PRFIN (dbm) IF Output Level, PIFOUT (dbm) rd Order Intermodulation Distortion, IM (dbm) IF OUTPUT LEVEL AND IM vs. RF INPUT LEVEL frf =. GHz frf =. GHz flo =.9 GHz =. V RF Input Level PRFIN (dbm) VCO Oscillation Frequency, fvco (GHz).... VCO OSCILLATION FREQUENCY vs. TUNING VOLTAGE L = 7 nh L = nh L = nh L = nh. Tuning Voltage, VTU (V) D K MKR. khz -. db VCO PHASE NOISE (fvco = MHz center) ATTEN db RL -. dbm db/ MKR -. db. khz = V Vtune = V TA = + C Monitor at pin CENTER MHZ SPAN. khz RBW. khz ++ VBW Hz SWP. s VCO PHASE NOISE (fvco =.9 9 MHz center) ATTEN db RL -. dbm db/ MKR -. db. khz D MKR. khz -. db = V Vtune = V TA = + C Monitor at pin K CENTER.9 9 GHZ SPAN. khz RBW. khz ++ VBW Hz SWP. s

5 TYPICAL SCATTERING PARAMETERS RF Port =. V Start Stop. GHz. GHz RF Port =. V Start Stop. GHz. GHz : MHz 9.8 Ω j. Ω : MHz 9. Ω j 8. Ω : 9 MHz 8. Ω j 7. Ω : MHz. Ω j 9. Ω : 9 MHz 8. Ω j 7.9 Ω : MHz.7 Ω j.7 : MHz. Ω +j. Ω : 8 MHz. Ω +j. Ω : MHz. Ω +j. Ω : MHz. Ω +j 7. Ω : MHz. Ω +j. Ω SYSTEM APPLICATION EXAMPLE RX BPF BPF Tuned Resonating Tank VT UPC7TB LPF PLL Frequency Synthesizer Reference Oscillator (Crystal)

6 OUTLINE DIMENSIONS (Units in mm) LEAD CONNECTIONS PACKAGE OUTLINE S (Top View) (Bottom View).±.....±..± CW.9 ±..7 DOT ON BACK SIDE. RF INPUT. GND. LO. LO.. IF OUTPUT ~ APPLICATION CIRCUIT EXAMPLE D BIAS VARACTOR* K Ω L DIODES K Ω R C.µF nh nh C R.µF ORDERING INFORMATION PART NUMBER -E-A Note: Embossed Tape, 8 mm wide, Pins,, are in tape pull-out direction. QTY K/Reel LO LO.µF GND Vcc.µF V RFIN IFOUT C.µF C * Recommended Varactor Diodes: Alpha SMV-, Toshiba SV8 or equivalent Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES Headquarters 9 Patrick Henry Drive Santa Clara, CA 9-87 (8) 988- Telex -9 FAX (8) Hour Fax-On-Demand: 8-9- (U.S. and Canada only) Internet: DATA SUBJECT TO CHANGE WITHOUT NOTICE 7/8/

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