L, S-BAND SPDT SWITCH
|
|
- Donna Powell
- 6 years ago
- Views:
Transcription
1 DESCRIPTION The µpg8tk is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed for mobile phone and another L, S-band application. This device can operate control switching by control voltage.8 to.3 V. This device can operate frequency from. to, having the low insertion loss and high isolation. This device is housed in a 6-pin plastic TSSON (Thin Shrink Small Out-line Non-leaded) package. And this package is able to high-density surface mounting. FEATURES Switch control voltage : Vcont (H) =.8 to.3 V (.7 V TYP.) : Vcont (L) =. to +. V ( V TYP.) Low insertion loss : LINS =.4 db f =. to. GHz, Vcont (H) =.7 V, Vcont (L) = V : LINS =.4 db f =. to. GHz, Vcont (H) =.7 V, Vcont (L) = V : LINS3 =.47 db f =. to. GHz, Vcont (H) =.7 V, Vcont (L) = V : LINS4 =.3 db f =. to, Vcont (H) =.7 V, Vcont (L) = V High isolation : ISL = 7 db f =. to. GHz, Vcont (H) =.7 V, Vcont (L) = V : ISL = 9 db f =. to. GHz, Vcont (H) =.7 V, Vcont (L) = V : ISL3 = 7 db f =. to. GHz, Vcont (H) =.7 V, Vcont (L) = V : ISL4 = 7 db f =. to, Vcont (H) =.7 V, Vcont (L) = V Handling power : Pin (. db) = +9. dbm f =./. GHz, Vcont (H) =.7 V, Vcont (L) = V : Pin ( db) = +3. dbm f =./. GHz, Vcont (H) =.7 V, Vcont (L) = V High-density surface mounting : 6-pin plastic TSSON package (...37 mm) APPLICATIONS L, S-band digital cellular or cordless telephone W-LAN, WLL and Bluetooth TM etc. ORDERING INFORMATION L, S-BAND SPDT SWITCH Part Number Order Number Package Marking Supplying Form G Embossed tape 8 mm wide µpg8tk-e µpg8tk-e-a 6-pin plastic TSSON (Pb-Free) Note Pin, 6 face the perforation side of the tape Qty kpcs/reel Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µpg8tk-a GaAs INTEGRATED CIRCUIT µpg8tk Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PG78EJVDS (nd edition) Date Published December CP(K) The mark shows major revised points.
2 µpg8tk PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) (Top View) (Bottom View) Pin No. G 3 4 TRUTH TABLE Vcont Vcont INPUT OUTPUT INPUT OUTPUT Low High OFF ON High Low ON OFF ABSOLUTE MAXIMUM RATINGS (TA = + C, unless otherwise specified) Parameter Symbol Ratings Unit Switch Control Voltage Vcont +6. Note V Input Power Pin +3 dbm Operating Ambient Temperature TA 4 to +8 C Storage Temperature Tstg to + C Note Vcont Vcont 6. V RECOMMENDED OPERATING RANGE (TA = + C, unless otherwise specified) Parameter Symbol MIN. TYP. MAX. Unit Switch Control Voltage (H) Vcont (H) V Switch Control Voltage (L) Vcont (L). +. V Pin Name OUTPUT GND 3 OUTPUT 4 Vcont INPUT 6 Vcont Data Sheet PG78EJVDS
3 µpg8tk ELECTRICAL CHARACTERISTICS (TA = + C, Vcont (H) =.7 V, Vcont (L) = V, DC cut capacitors = 6 pf, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Insertion Loss LINS f =. to. GHz Note.4.4 Insertion Loss LINS f =. to. GHz.4. Insertion Loss 3 LINS3 f =. to. GHz.47. Insertion Loss 4 LINS4 f =. to.3.6 Isolation ISL f =. to. GHz Note 3 7 Isolation ISL f =. to. GHz 6 9 Isolation 3 ISL3 f =. to. GHz 4 7 Isolation 4 ISL4 f =. to 4 7 Input Return Loss RLin f =. to Note db Output Return Loss RLout f =. to Note db. db Loss Compression Pin (. db) f =./. GHz Input Power Note f =. to +9. db Loss Compression Pin ( db) f =. to +3. dbm Input Power Note 3 nd Harmonics f f =./. GHz, Pin = + dbm 6 7 dbc 3rd Harmonics 3f f =./. GHz, Pin = + dbm 6 7 dbc Input 3rd Order Distortion Intercept Point IIP3 f =. to tone MHz spacing db db dbm +6 dbm Switch Control Current Icont No signal. µa Switch Control Speed tsw % CTL to 9/% RF ns Notes. DC cut capacitors = pf at f =. to. GHz. Pin (. db) is measured the input power level when the insertion loss increases more. db than that of linear range. 3. Pin ( db) is measured the input power level when the insertion loss increases more db than that of linear range. Caution This device is used it is necessary to use DC cut capacitors. The value of DC cut capacitors should be chosen to accommodate the frequency of operation, bandwidth, switching speed and the condition with actual board of your system. The range of recommended DC cut capacitor value is less than pf. Data Sheet PG78EJVDS 3
4 µpg8tk ELECTRICAL CHARACTERISTICS (TA = + C, Vcont (H) =.8 V, Vcont (L) = V, DC cut capacitors = 6 pf, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Insertion Loss LINS f =. to. GHz Note.4.47 Insertion Loss LINS f =. to. GHz.46. Insertion Loss 3 LINS3 f =. to. GHz.48.7 Insertion Loss 4 LINS4 f =. to.4.6 Isolation ISL f =. to. GHz Note 3 7 Isolation ISL f =. to. GHz 6 9 Isolation 3 ISL3 f =. to. GHz 4 7 Isolation 4 ISL4 f =. to 4 7 Input Return Loss RLin f =. to Note db Output Return Loss RLout f =. to Note db. db Loss Compression Pin (. db) f =./. GHz Input Power Note f =. to +. db Loss Compression Pin ( db) f =. to +. dbm Input Power Note 3 Switch Control Current Icont No signal. µa Switch Control Speed tsw % CTL to 9/% RF ns Notes. DC cut capacitors = pf at f =. to. GHz. Pin (. db) is measured the input power level when the insertion loss increases more. db than that of linear range. 3. Pin ( db) is measured the input power level when the insertion loss increases more db than that of linear range. Caution This device is used it is necessary to use DC cut capacitors. The value of DC cut capacitors should be chosen to accommodate the frequency of operation, bandwidth, switching speed and the condition with actual board of your system. The range of recommended DC cut capacitor value is less than pf. db db dbm 4 Data Sheet PG78EJVDS
5 µpg8tk EVALUATION CIRCUIT Remark C :. to. GHz pf :. to 6 pf C Vcont OUTPUT INPUT pf pf 6 C GND Vcont 4 3 C OUTPUT The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. Data Sheet PG78EJVDS
6 µpg8tk ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD Vcont INPUT C Vcont USING THE NEC EVALUATION BOARD Symbol Values C, C, C3 6 pf C4, C pf C C4 G C3 C OUTPUT OUTPUT 6 Data Sheet PG78EJVDS
7 µpg8tk TYPICAL CHARACTERISTICS (TA = + C, Vcont (H) =.7 V, Vcont (L) = V, DC cut capacitors = 6 pf, using test fixture, unless otherwise specified) INPUT-OUTPUT INPUT-OUTPUT INSERTION LOSS vs. FREQUENCY INSERTION LOSS vs. FREQUENCY Insertion Loss LINS (db) Isolation ISL (db) Input Return Loss RLin (db) :.38 db. GHz :.4 db. GHz 3:.44 db. GHz 4:.468 db. GHz :.3 db : 7.37 db. GHz : 3.94 db. GHz 3:.9 db. GHz 4: 9.69 db. GHz : 8.76 db INPUT-OUTPUT INPUT RETURN LOSS vs. FREQUENCY : 4.88 db. GHz 4 : db. GHz 3 3: 9.7 db. GHz 4: 9.88 db. GHz : 7.86 db 3 4 INPUT-OUTPUT ISOLATION vs. FREQUENCY Insertion Loss LINS (db) Isolation ISL (db) Input Return Loss RLin (db) :.38 db. GHz :.43 db. GHz 3:.446 db. GHz 4:.468 db. GHz :. db : 7.39 db. GHz : db. GHz 3:.47 db. GHz 4: db. GHz : 8.9 db INPUT-OUTPUT INPUT RETURN LOSS vs. FREQUENCY :.98 db. GHz 4 : 7.98 db. GHz 3 3: db. GHz 4: 8.93 db. GHz : db 3 4 INPUT-OUTPUT ISOLATION vs. FREQUENCY Remark The graphs indicate nominal characteristics Data Sheet PG78EJVDS 7
8 µpg8tk Output Return Loss RLout (db) Output Power Pout (dbm) INPUT-OUTPUT OUTPUT RETURN LOSS vs. FREQUENCY : 4.97 db. GHz 4 : 7.3 db. GHz 3 3: db. GHz 4: 6. db. GHz : 4.38 db OUTPUT POWER vs. INPUT POWER f =. GHz Input Power Pin (dbm) Remark The graphs indicate nominal characteristics. Output Return Loss RLout (db) INPUT-OUTPUT OUTPUT RETURN LOSS vs. FREQUENCY :.8 db. GHz 4 : 8.8 db. GHz 3 3: 8.96 db. GHz 4: 6.8 db. GHz : 3.76 db Data Sheet PG78EJVDS
9 µpg8tk PACKAGE DIMENSIONS 6-PIN PLASTIC TSSON (UNIT: mm) (Top View).±..±..3±.6.3±.6.4 ± ±.7.±. (Bottom View).± ±.7.7± Data Sheet PG78EJVDS 9
10 µpg8tk RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 6 C or below Time at peak temperature Time at temperature of C or higher Preheating time at to 8 C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : seconds or less : 6 seconds or less : ±3 seconds : 3 times :.%(Wt.) or below Wave Soldering Peak temperature (molten solder temperature) : 6 C or below Time at peak temperature : seconds or less Preheating temperature (package surface temperature) : C or below Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) : time :.%(Wt.) or below Partial Heating Peak temperature (terminal temperature) : 3 C or below Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 3 seconds or less :.%(Wt.) or below Caution Do not use different soldering methods together (except for partial heating). IR6 WS6 HS3 Data Sheet PG78EJVDS
11 Subject: Compliance with EU Directives 49 Patrick Henry Drive Santa Clara, CA Telephone: (48) 99- Facsimile: (48) CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive /9/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 3//EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix A indicates that the device is Pb-free. The AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Concentration Limit per RoHS (values are not yet fixed) < PPM Concentration contained in CEL devices -A -AZ Not Detected (*) Mercury < PPM Not Detected Cadmium < PPM Not Detected Hexavalent Chromium < PPM Not Detected PBB < PPM Not Detected PBDE < PPM Not Detected If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.
SiGe:C LOW NOISE AMPLIFIER FOR GPS
DESCRIPTION The µpc8tn is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics,
More information3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS
DESCRIPTION The µpd572tu is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is
More informationDISCONTINUED PG2012TK. GaAs INTEGRATED CIRCUIT L-BAND SPDT SWITCH DESCRIPTION FEATURES APPLICATIONS ORDERING INFORMATION
DESCRIPTION L-BAND SPDT SWITCH GaAs INTEGRATED CIRCUIT PG2012TK The PG2012TK is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) switch which were developed for mobile phone and another L-band application.
More informationFOR OPTICAL DAA, HIGH LINEAR 16-PIN SOP PHOTOCOUPLER
PHOTOCOUPLER PS8741 FOR OPTICAL DAA, HIGH LINEAR 16-PIN SOP PHOTOCOUPLER NEPOC Series DESCRIPTION The PS8741 is an optically coupled isolator containing a GaAs LED on the input side and two photodiodes
More informationFOR OPTICAL DAA, HIGH LINEAR 16-PIN SOP PHOTOCOUPLER
DESCRIPTION FOR OPTICAL DAA, HIGH LINEAR 16-PIN SOP PHOTOCOUPLER PHOTOCOUPLER PS8741 NEPOC Series The PS8741 is an optically coupled isolator containing a GaAs LED on the input side and two photodiodes
More informationGaAs Integrated Circuit for L, S-Band SPDT Switch PHASE-OUT
Preliminary GaAs Integrated Circuit for L, S-Band SPDT Switch Data Sheet DESCRIPTION The is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed for mobile phone and
More information6-PIN DIP, 0.08 Ω LOW ON-STATE RESISTANCE 2.0 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET
Solid State Relay OCMOS FET 6-PIN DIP,.8 Ω LOW ON-STATE RESISTANCE 2. A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET NEPOC Series DESCRIPTION The PS71E-1A and PS71EL-1A are solid state relays containing
More informationNEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mw) 3-PIN POWER MINIMOLD (34 PACKAGE)
NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (8 mw) 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (8 mw) AMPLIFICATION PO = 29 dbm TYP.
More information4-PIN SOP 400 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 1-ch Optical Coupled MOS FET
Solid State Relay OCMOS FET 4-PIN SOP 4 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 1-ch Optical Coupled MOS FET DESCRIPTION The is a solid state relay containing GaAs LEDs on the light emitting side (input
More informationHIGH CMR, 10 Mbps TOTEM POLE OUTPUT TYPE 5-PIN SOP PHOTOCOUPLER
PHOTOCOUPLER PS9115 HIGH CMR, 1 Mbps TOTEM POLE OUTPUT TYPE 5-PIN SOP PHOTOCOUPLER NEPOC Series DESCRIPTION The PS9115 is an optically coupled high-speed, totem pole output isolator containing a GaAlAs
More information13 GHz INPUT DIVIDE BY 4 PRESCALER IC FOR SATELLITE COMMUNICATIONS
DESCRIPTION BIPOLAR DIGITAL INTEGRATED CIRCUIT GHz INPUT DIVIDE BY 4 PRESCALER IC FOR SATELLITE COMMUNICATIONS The is a silicon germanium (SiGe) monolithic integrated circuit designed as a divide by 4
More informationHIGH ISOLATION VOLTAGE 4-PIN SOP PHOTOCOUPLER
DESCRIPTION HIGH ISOLATION VOLTAGE 4-PIN SOP PHOTOCOUPLER PHOTOCOUPLER NEPOC Series The is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This
More informationPHOTOCOUPLER PS2801A-1,PS2801A-4
PHOTOCOUPLER PS280-1,PS280-4 HIGH ISOLATION VOLTAGE SSOP PHOTOCOUPLER NEPOC Series DESCRIPTION The PS280-1 and PS280-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN
More information3V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER
3V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER UPC277TB FEATURES HIGH GAIN: 2 db at 9 to MHz Typical HIGH OUTPUT POWER: PSAT = +2. dbm at 9 MHz + dbm at MHz LOW BIAS VOLTAGE: 3. V Typical, 2.7 V Minimum
More informationDPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN
DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN DESCRIPTION GaAs INTEGRATED CIRCUIT The is a GaAs MMIC DPDT (Double Pole Double Throw) switch which was developed for 2.4 GHz and 6 GHz dual-band
More informationHIGH CMR, 10 Mbps OPEN COLLECTOR OUTPUT TYPE 5-PIN SOP PHOTOCOUPLER
DESCRIPTION HIGH CMR, 1 Mbps OPEN COLLECTOR OUTPUT TYPE 5-PIN SOP PHOTOCOUPLER PHOTOCOUPLER PS9114 NEPOC Series The PS9114 is an optically coupled high-speed, isolator containing a GaAlAs LED on the input
More information5 V, SUPER MINIMOLD WIDEBAND SI RFIC AMPLIFIER
V, SUPER MINIMOLD WIDEBAND SI RFIC AMPLIFIER UPC278TB FEATURES GAIN vs. FREQUENCYand TEMPERATURE HIGH DENSITY SURFACE MOUNTING: pin super minimold or SOT-33 package HIGH GAIN: 1 db TYP SATURATED OUTPUT
More informationX to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. Part Number Order Number Package Quantity Marking Supplying Form
HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES Super low noise figure, high associated gain and middle output power NF =.3 db TYP., Ga
More informationPart Number Order Number Package Marking Supplying Form G4Y
GaAs INTEGRATED CIRCUIT PG2176T5N 50 TERMINATION TYPE HIGH POWER SPDT SWITCH FOR WiMAX DESCRIPTION The PG2176T5N is a GaAs MMIC 50 termination type high power SPDT (Single Pole Double Throw) switch which
More informationPHOTOCOUPLER PS2506-1,-2,-4,PS2506L-1,-2,-4
PHOTOCOUPLER PS2506-1,-2,-4,PS2506L-1,-2,-4 HIGH ISOLATION VOLTAGE AC INPUT, DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES NEPOC Series DESCRIPTION The PS2506-1, -2, -4 and PS2506L-1, -2, -4 are
More informationPHOTOCOUPLER PS2505-1,-2,-4,PS2505L-1,-2,-4
PHOTOCOUPLER PS25-1,-2,-4,PS25L-1,-2,-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE MULTI PHOTOCOUPLER SERIES NEPOC Series DESCRIPTION The PS25-1, -2, -4 and PS25L-1, -2, -4 are optically coupled isolators
More informationHIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES
PHOTOCOUPLER PS2561A-1,PS2561AL-1,PS2561AL1-1,PS2561AL2-1 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES NEPOC Series DESCRIPTION The PS2561A-1 is an optically coupled isolator
More informationDISCONTINUED. Preliminary. Data Sheet. GaAs Integrated Circuit SP3T Switch for Bluetooth and a/b/g DESCRIPTION FEATURES APPLICATIONS
μpg243tz GaAs Integrated Circuit SP3T Switch for Bluetooth and 82.a/b/g DESCRIPTION Preliminary Data Sheet The μpg243tz is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This
More informationPHOTOCOUPLER PS2805-1,PS2805-4
PHOTOCOUPLER PS2805-1,PS2805-4 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SSOP PHOTOCOUPLER NEPOC Series DESCRIPTION The PS2805-1 and PS2805-4 are optically coupled isolators containing GaAs light emitting
More information1.8 V, POWER AMPLIFIER FOR Bluetooth TM Class 1
DESCRIPTION GaAs INTEGRATED CIRCUIT PG2250T5N 1.8 V, POWER AMPLIFIER FOR Bluetooth TM Class 1 The PG2250T5N is a GaAs MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes
More information3.0 GHz DIVIDE BY 4 PRESCALER
. GHz DIVIDE BY PRESCALER UPB5GV FEATURES TEST CIRCUIT HIGH FREUENCY OPERATION TO GHz FIXED DIVIDE RATIO: LOW CURRENT CONSUMPTION: 5 ma at 5 V SMALL PACKAGE: 8 PIN SSOP AVAILABLE IN TAPE AND REEL Power
More informationHIGH COLLECTOR TO EMITTER VOLTAGE SOP MULTI PHOTOCOUPLER
DESCRIPTION PHOTOCOUPLER PS2732-1,PS2733-1 HIGH COLLECTOR TO EMITTER VOLTAGE SOP MULTI PHOTOCOUPLER NEPOC Series The PS2732-1 and PS2733-1 are optically coupled isolators containing a GaAs light emitting
More informationWIDE BAND DPDT SWITCH
WIDE BAND DPDT SWITCH CMOS INTEGRATED CIRCUIT DESCRIPTION The is a CMOS MMIC DPDT (Double Pole Double Throw) switch which is developed for mobile communications, wireless communications and another RF
More informationDISCONTINUED PG2413T6Z. Data Sheet. GaAs Integrated Circuit SP3T Switch for Bluetooth TM and b/g DESCRIPTION FEATURES APPLICATIONS
GaAs Integrated Circuit SP3T Switch for Bluetooth TM and 802.11b/g DESCRIPTION Data Sheet The PG2413T6Z is a GaAs MMIC SP3T switch which was developed for Bluetooth, wireless LAN. This device can operate
More information1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
DESCRIPTION LASER DIODE 0 nm FOR 56 Mb/s, 6 Mb/s,.5 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE The is a 0 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-. These
More information5 V AGC AMPLIFIER + VIDEO AMPLIFIER
5 V AGC AMPLIFIER + VIDEO AMPLIFIER UPC327GV UPC328GV FEATURES ON-CHIP LOW DISTORTION AMPLIFIER: IIP3 = -4 dbm at minimuim gain WIDE AGC DYNAMIC RANGE: GCR = 53 db TYP ON-CHIP VIDEO AMPLIFIER: VOUT =.25
More informationGaAs INTEGRATED CIRCUIT
DATA SHEET GaAs INTEGRATED CIRCUIT μpg249t6x HIGH POWER SPDT SWITCH FOR WiMAX TM DESCRIPTION The μpg249t6x is a GaAs MMIC high power SPDT (Single Pole Double Throw) switch which were designed for WiMAX.
More informationNEC's L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT 2.0 ± 0.2
FEATURES NEC's L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT HIGH POWER GAIN: GA = 6 db TYP, MSG = 8 db TYP at f = 2 GHZ, VCE = 2 V, IC = 3 ma, ZS = ZL = 50 Ω LOW NOISE: NF =.0 db TYP at f = 2 GHZ, VCE
More informationNPN SILICON GERMANIUM RF TRANSISTOR NESG270034
www.datasheet4u.com NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) FEATURES This product is suitable for
More informationDISCONTINUED PC3240TB BIPOLAR ANALOG INTEGRATED CIRCUIT 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION FEATURES APPLICATIONS ORDERING INFORMATION
DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER The PC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device
More informationNEC's NPN SILICON TRANSISTOR. ñ EIAJ 1 REGISTERED NUMBER PACKAGE OUTLINE
FEATURES NEW MINIATURE M PACKAGE: Small transistor outline. X. X. mm Low profile /. mm package height Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: ft = GHz LOW NOISE FIGURE: =.
More informationSiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS
DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT PC8231TK SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS The PC8231TK is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed
More informationBIPOLAR ANALOG INTEGRATED CIRCUIT
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT μpc8tn SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μpc8tn is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed as low noise
More information250 MHz QAM IF DOWNCONVERTER UPC2798GR
25 MHz QAM IF DOWNCONVERTER UPC2798GR FEATURES RF/LO FREQUENCY RANGE: 3-25 MHz ON CHIP VCO LOW DISTORTION AGC AMPLIFIER: -9 dbm IIP3 @ MIN Gain ON CHIP VIDEO AMP: 3. Vp-p () SMALL 2 PIN SSOP PACKAGE AVAILABLE
More informationDISCONTINUED LASER DIODE NX8311UD nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION FEATURES
DESCRIPTION 1 310 nm FOR LONG HAUL.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA The NX8311UD is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical
More informationDISCONTINUED. LASER DIODE NX8570 Series nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION FEATURES
DESCRIPTION LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR The NX8570 Series is a 1 550 nm Multiple Quantum Well (MQW) structured Distributed
More informationNPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14
NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) FEATURES The device is an ideal choice for low
More informationPHOTOCOUPLER PS2561-1,-2,-4,PS2561L-1,-2,-4 PS2561L1-1,-2,-4,PS2561L2-1,-2,-4
PHOTOCOUPLER PS2561-1,-2,-4,PS2561L-1,-2,-4 PS2561L1-1,-2,-4,PS2561L2-1,-2,-4 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES NEPOC Series DESCRIPTION The PS2561-1, -2, -4 are optically
More informationDISCONTINUED PC3232TB BIPOLAR ANALOG INTEGRATED CIRCUIT 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION FEATURES APPLICATIONS
DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT PC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER The PC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF
More information5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER. Part Number Order Number Package Marking Supplying Form
DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3226TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER The PC3226TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF
More informationGaAs INTEGRATED CIRCUIT
DATA SHEET GaAs INTEGRATED CIRCUIT µpg29tb L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µpg29tb is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or
More informationMODULATION LIGHT SOURCE FOR DWDM APPLICATIONS
LASER DIODE NX8563LA Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE 2.5 Gb/s DIRECTLY MODULATION LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LA Series is a 1 550 nm Multiple Quantum Well
More information4-PIN SOP 400 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 1-ch Optical Coupled MOS FET
DESCRIPTION 4-PIN SOP 4 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 1-ch Optical Coupled MOS FET Solid State Relay OCMOS FET PS7241E-1B NEPOC Series The PS7241E-1B is an optically coupled element that
More informationDual-Band Wireless DPDT RF Switch
Dual-Band Wireless DPDT RF Switch RF SWITCH CG2164X3 DESCRIPTION The CG2164X3 is a GaAs MMIC DPDT (Double Pole Double Throw) switch for 2.5 GHz and 6 GHz dual-band wireless LAN applications PACKAGE 6-pin
More information3 V SUPER MINIMOLD L-BAND SI MMIC DOWNCONVERTER
V SUPER MINIMOLD L-BAND SI MMIC DOWNCONVERTER FEATURES HIGH DENSITY SURFACE MOUNTING: Pin Super Minimold or SOT- package WIDE BAND OPERATION: RF =. to. GHz IF = to MHz ON BOARD OSCILLATOR SUPPLY VOLTAGE:
More informationIN COAXIAL PACKAGE FOR 2.5Gb/s APPLICATIONS
FEATURES NEC's φ50 µm InGaAs APD IN COAXIAL PACKAGE FOR 2.5Gb/s APPLICATIONS SMALL DARK CURRENT: ID = 7 na HIGH SENSITIVITY: S = 0.94 A/W at λ = 0 nm, M = S = 0.96 A/W at λ = 550 nm, M = HIGH SPEED RESPONSE:
More informationHigh Power SPDT RF Switch
High Power SPDT RF Switch RF SWITCH CG2409M2 DESCRIPTION The CG2409M2 is a GaAs MMIC high power SPDT (Single Pole Double Throw) switch which was designed for WiMAX and Wireless LAN applications FEATURES
More informationDATA SHEET. NON-REFLECTIVE HIGH POWER SPDT SWITCH FOR WiMAX
DESCRIPTION This device is housed in a 12-pin plastic QFN (Quad Flat Non-leaded) package, and is suitable for highdensity surface mounting. FEATURES Control voltage : Vcont (H) = 2.5 to 3.3 V (3.0 V TYP.)
More information3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER. Part Number Order Number Package Marking Supplying Form C3V
BIPOLAR ANALOG INTEGRATED CIRCUIT μpc3239tb 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μpc3239tb is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB.
More informationPRELIMINARY DATA SHEET. NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE WITH DRIVER FOR 10 Gb/s APPLICATIONS
PRELIMINARY DATA SHEET FEATURES NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE WITH DRIVER FOR 10 Gb/s APPLICATIONS INTEGRATED ELECTROABSORPTION MODULATOR INTERNAL DRIVER IC UP TO 40
More informationNPN SILICON TRANSISTOR
TK NPN SILICON TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) NEW M03 PACKAGE: Smallest transistor outline package available Low profile/0.59 mm package height Flat lead style for better RF performance
More informationPart Number Order Number Package Marking Supplying Form PD5750T7D-E4A PD5750T7D-E4A-A 6-pin WLBGA (T7D) (Pb-Free)
SiGe BiCMOS Integrated Circuit Wide Band LNA IC with Through Function DESCRIPTION Data Sheet The PD5750T7D is a low noise wideband amplifier IC mainly designed for the portable digital TV application.
More information6, 8-PIN DIP, 250 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 1-ch, 2-ch Optical Coupled MOS FET
DESCRIPTION Solid State Relay OCMOS FET 6, 8-PIN DIP, 2 V BREAK DOWN VOLTAGE NORMALLY CLOSE TYPE 1-ch, 2-ch Optical Coupled MOS FET NEPOC Series The PS7122A-1B, -2B and PS7122AL-1B, -2B are solid state
More informationPHOTOCOUPLER PS2533-1,-2,-4,PS2533L-1,-2,-4
PHOTOCOUPLER PS2533-1,-2,-4,PS2533L-1,-2,-4 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SERIES NEPOC Series DESCRIPTION The PS2533-1, -2, -4 and PS2533L-1, -2, -4 are optically
More information5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER. Part Number Order Number Package Marking Supplying Form
DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3225TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER The PC3225TB is a silicon germanium (SiGe) monolithic integrated circuits designed as IF
More informationTX-IF SiMMIC FOR W-CDMA AGC + I/Q MODULATOR W-CDMA
FEATURES TX-IF: 380 MHz LOW POWER CONSUMPTION: = 3.0 V SMALL 20 PIN QFN PACKAGE: Flat lead style for better performance TAPE AND REEL PACKAGING AVAILABLE DESCRIPTION NEC's UPC8195K is a Silicon Microwave
More informationGaAs Integrated Circuit for L, S-Band SPDT Switch
GaAs Integrated Circuit for L, S-Band SPDT Switch Preliminary Data Sheet R9DSEJ4 Rev.4. DESCRIPTION The μpg4tb is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed for
More informationHIGH CMR, 10 Mbps OPEN COLLECTOR OUTPUT TYPE 5-PIN SOP (SO-5) PHOTOCOUPLER
PHOTOCOUPLER PS9117 DESCRIPTION The PS9117 is an optically coupled high-speed, active low type isolator containing a GaAlAs LED on the input side and a photodiode and a signal processing circuit on
More informationDISCONTINUED. California Eastern Laboratories NX8564LE NX8565LE NX8566LE SERIES
FEATURES NEC's EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH 360, 600, 240 km DWDM APPLICATIONS INTEGRATED ELECTROABSORPTION MODULATOR VERY LOW DISPERSION PENALTY:
More informationDISCONTINUED BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION FEATURES APPLICATION
DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER The PC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using
More informationPHOTOCOUPLER PS2932-1,PS2933-1
PHOTOCOUPLER PS2932-1,PS2933-1 HIGH COLLECTOR TO EMITTER VOLTAGE 4-PIN ULTRA SMALL FLAT-LEAD PHOTOCOUPLER NEPOC Series DESCRIPTION The PS2932-1, PS2933-1 are optically coupled isolator containing a GaAs
More informationBIPOLAR ANALOG INTEGRATED CIRCUIT
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc3223tb V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µpc3223tb is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC
More information4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS
DESCRIPTION SILICON POWER MOS FET NE5500234 4.8 V N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS The NE5500234 is an N-channel silicon power MOS FET specially designed
More informationDISCONTINUED BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION FEATURES APPLICATION
DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3223TB 5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER The PC3223TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured
More informationSILICON POWER MOS FET NE A
SILICON POWER MOS FET 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The is an N-channel silicon power laterally diffused MOS FET specially designed as
More informationNEC's NPN SILICON TRANSISTOR
NEC's NPN SILICON TRANSISTOR NE81M1 FEATURES OUTLINE DIMENSIONS (Units in mm) NEW MINIATURE M1 PACKAGE: Small transistor outline 1. X. X. mm Low profile /. mm package height Flat lead style for better
More informationPC2747TB, PC2748TB 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS
DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUITS 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS The PC2747TB, PC2748TB are silicon monolithic integrated circuits designed as amplifier
More informationPHOTOCOUPLER PS2805C-1,PS2805C-4
PHOTOCOUPLER HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SSOP PHOTOCOUPLER NEPOC Series DESCRIPTION The PS280-1 and are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon
More information50Ω TERMINATION TYPE HIGH POWER SPDT SWITCH. Part Number Order Number Package Marking Description
RF SWITCH CG2176X3 50Ω TERMINATION TYPE HIGH POWER SPDT SWITCH DESCRIPTION The CG2176X3 is a phemt GaAs MMIC 50Ω termination type high power SPDT (Single Pole Double Throw) switch which was developed for
More informationHETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02
HETERO JUNCTION FIELD EFFECT TRANSISTOR X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES Super low noise figure, high associated gain and middle output power NF = 0.3 db TYP., Ga = 12.5
More informationHETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04
HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES Super low noise figure and high associated gain NF = 0.45 db TYP., Ga =
More informationLOW DISTORTION DOWN-CONVERTER IC FOR DIGITAL CATV
BIPOLAR ANALOG INTEGRATED CIRCUIT PC3220GR LOW DISTORTION DOWN-CONVERTER IC FOR DIGITAL CATV DESCRIPTION The PC3220GR is a silicon monolithic IC designed for use as IF down-converter for digital CATV.
More informationC TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET. Drop-In Replacement: CE3514M4
FEATURES HETERO JUNCTION FIELD EFFECT TRANSISTOR C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET Super low noise figure and high associated gain NF = 0.45 db TYP., Ga = 12.0 db TYP.
More informationNEC's 1 W, L&S-BAND Medium POWER GaAs HJ-FET. Gate 0.6 ± ± 0.2. ηadd Power Added Efficiency % PACKAGE OUTLINE 79A
NEC's 1 W, L&S-BAND Medium POWER GaAs HJ-FET NE651R479A FEATURES OUTLINE DIMENSIONS (Units in mm) LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel USABLE TO 3.7 GHz: Fixed Wireless Access,
More informationX to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. Part Number Order Number Package Quantity Marking Supplying Form
FEATURES HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Super low noise figure, high associated gain and middle output power NF = 0.3 db TYP.,
More informationNEC's 3.0 GHz DIVIDE BY 64/128/256 PRESCALER VOUT PACKAGE OUTLINE
FEATURES NE's 3. GHz IVIE BY 64/8/56 PRESALER HIGH FREUENY OPERATION TO 3 GHz SELETABLE IVIE RATIO: 64, 8, 56 LOW URRENT ONSUMPTION: 9 ma at 5 V SMALL PAKAGE: 8 pin SSOP AVAILABLE IN TAPE AN REEL ESRIPTION
More informationPHOTOCOUPLER PS8501L1,PS8501L2
PHOTOCOUPLER PS8501L1,PS8501L2 HIGH SPEED ANALOG OUTPUT TYPE 8 mm CREEPAGE 8-PIN PHOTOCOUPLER NEPOC Series DESCRIPTION The PS8501L1 and PS8501L2 are 8-pin high speed photocouplers containing a GaAIAs LED
More informationPHOTOCOUPLER PS2702-1
PHOTOCOUPLER PS2702-1 DESCRIPTION HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR SOP MULTI PHOTOCOUPLER SERIES NEPOC Series The PS2702-1 is an optically coupled isolator containing a GaAs light emitting
More informationBIPOLAR ANALOG INTEGRATED CIRCUITS PC2709TB
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS PC279TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC279TB is asilicon monolithic integrated circuits designed as 1st IF
More informationW6 12 mm wide embossed taping (Pb Free) CAUTION. Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Silicon Power LDMOS FET FEATURES Data Sheet High Output Power : P out = 39.5 dbm TYP. (V DS = 7.5 V, I Dset = 200 ma, f = 460 MHz, P in = 25 dbm) High power added efficiency : η add = 66% TYP. (V DS =
More informationBIPOLAR ANALOG INTEGRATED CIRCUIT
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc279tb 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µpc279tb is a silicon monolithic integrated circuit designed as
More informationDATA SHEET 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS
DESCRIPTION DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc79tb 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS The µpc79tb is a silicon monolithic integrated circuit designed as
More informationGHz RF Front-End Module. o C
Functional Block Diagram Features 4 High Efficient Power Amplifier: 41% at Pout= 23dBm -PA P-1dB: +21dBM Typical @ +3.3V-PA Low Noise Amplifier (NF typical 1.8dB)-LNA Low Insertion Loss:0.4dB@ 2.45GHz-Switch
More informationBIPOLAR ANALOG INTEGRATED CIRCUIT
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc322gr LOW DISTORTION DOWN-CONVERTER IC FOR DIGITAL CATV DESCRIPTION The µpc322gr is a silicon monolithic IC designed for use as IF down-converter for digital
More informationBIPOLAR ANALOG INTEGRATED CIRCUITS
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µpc275tb and µpc27tb are silicon monolithic integrated circuits
More informationDATA SHEET. X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. Part Number Order Number Package Quantity Marking Supplying Form
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES Super low noise figure and high associated gain NF = 0.30 db TYP., Ga = 13.5 db TYP.
More informationPS2565-1,PS2565L-1,PS2565L1-1,PS2565L2-1
PHOTOCOUPLER PS2565-1,PS2565L-1,PS2565L1-1,PS2565L2-1 HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE MULTI PHOTOCOUPLER SERIES NEPOC Series DESCRIPTION The PS2565-1 is optically coupled isolators containing
More informationDATA SHEET. N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
DATA HEET LDMO FIELD EFFECT TRANITOR NE55410GR N-CHANNEL ILICON POWER LDMO FET FOR 2 W + 10 W VHF to L-BAND INGLE-END POWER AMPLIFIER DECRIPTION The NE55410GR is an N-channel enhancement-mode LDMO FET
More informationDATA SHEET. C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET. Part Number Order Number Package Quantity Marking Supplying Form
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES Super low noise figure and high associated gain NF = 0.35 db TYP., Ga = 13.5
More informationDATA SHEET 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µpc271tb 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER The µpc271tb is a silicon monolithic integrated circuit designed as PA driver
More informationAbsolute Maximum Ratings Parameter Rating Unit Voltage 6.0 V Maximum input power (0.6 GHz to 2.5 GHz), RF1, RF2 +28 dbm Operating temperature -30 to +
Product Overview The is a single-pole double-throw (SPDT) switch designed for general purpose switching applications which require very low insertion loss and medium power handling capability. The is ideally
More informationBIPOLAR ANALOG INTEGRATED CIRCUITS
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µpc279tb 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µpc279tb is a silicon monolithic integrated circuits designed as 1st
More informationDATA SHEET 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
DESCRIPTION The DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS PC279TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER PC279TB is asilicon monolithic integrated circuits designed as 1st IF
More informationSKY LF: 300 khz 3 GHz Medium Power GaAs SPDT Switch
DATA SHEET SKY13268-344LF: 3 khz 3 GHz Medium Power GaAs SPDT Switch Applications Transceiver transmit-receive switching in GSM, CDMA, WCDMA, WLAN, Bluetooth, Zigbee, land mobile radio base stations or
More informationSKY , SKY LF: SP3T Switch for Bluetooth and b, g
DATA SHEET SKY325-349, SKY325-349LF: SP3T Switch for Bluetooth and 82.b, g Applications 82.b, g Bluetooth Zigbee TDMA/GSM/EDGE CDMA/WCDMA Other short-range wireless applications Simplified Block Diagram
More information