5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX
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1 FEATURES HIGH DENSITY SURFACE MOUNTING: pin super minimold or SOT- 33 package SUPPLY VOLTAGE: VCC =. to. V WIDEBAND RESPONSE: : fu =.9 GHz TYP : fu =. GHz TYP POWER GAIN: : GP = 13 db TYP : GP = db TYP DESCRIPTION The and are Silicon MMIC Wideband Amplifiers manufactured using NEC's GHz f T NESAT TM III silicon bipolar process. These devices are designed for use as buffer amps in DBS tuners. The UPC711/ 1TB are pin compatible and have comparable performance as the larger UPC711/1T, so they are suitable for use as a replacement to help reduce system size. These IC's are housed in a pin super minimold or SOT-33 package. Stringent quality assurance and test procedure ensure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = + C,, ZL = ZS = W) PART NUMBER PACKAGE OUTLINE S S SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX ICC Circuit Current (no signal) ma GP Power Gain, f = 1 GHz db fu ΔGP Upper Limit Operating Frequency (The gain at fu is 3 db down from the gain at 1 MHz) GHz G ain Flatness, f =.1 GHz to. GHz db ±. ±. PO(SAT) Maximum Output Level, f = 1 GHz, PIN = dbm dbm NF Noise Figure, f = 1 GHz RLIN Input Return Loss, f = 1 GHz db 9 1 RLOUT Output Return Loss, f = 1 GHz db ISOL Isolation, f = 1 GHz BIPOLAR ANALOG INTEGRATED CIRCUITS, V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER TYPICAL PERFORMANCE CURVES db db GP (db) Gain, 1 1 GAIN vs. FREQUENCY The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.. 33 Date Published: June,
2 ABSOLUTE MAXIMUM RATINGS 1 (TA = C) SYMBOLS PARAMETERS UNITS RATINGS VCC Supply Voltage V PIN Input Power dbm +1 PT Total Power Dissipation mw TOP Operating Temperature C - to + TSTG Storage Temperature C - to +1 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage.. Mounted on double sided copper clad x x 1. mm epoxy glass PWB (TA = + C). PIN DESCRIPTION, RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER UNITS MIN TYP MAX VCC Supply Voltage V... TOP Operating Temperature C Pin Pin Applied No. Name Voltage Description Internal Equivalent Circuit (V) 1 Input Signal input pin. An internal matching circuit, configured with resistors, enables Ω connection over a wide bandwidth. A multi-feedback circuit is designed to cancel the deviations of hfe and resistance. This pin must be coupled to the signal source with a blocking capacitor. Output Signal output pin. An internal matching circuit, configured with resistors, enables Ω connection over a wide bandwidth. This pin must be coupled to the output load with a blocking capacitor. VCC. to. Power supply pin. This pin should be externally equipped with a bypass capacitor to minimize ground impedance. GND Ground pin. This pin should be connected 3 to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to minimize impedance difference. 1 3
3 , TYPICAL PERFORMANCE CURVES (TA = C) Current, ICC (ma) Gain, GS (db) Isolation, ISOL, (db) CURRENT vs. VOLTAGE Voltage, VCC (V) GAIN AND NOISE FIGURE vs. FREQUENCY AND VOLTAGE VCC =. V VCC =. V VCC =. V GS NF ISOLATION vs. FREQUENCY VCC =. V Noise Figure, NF (db) Current, ICC (ma) Gain, GS (db) Input Return Loss, RLIN (db) Output Return Loss, RLOUT (db) CURRENT vs. TEMPERATURE Temperature, TA ( C) GAIN vs. FREQUENCY AND TEMPERATURE TA = - C TA = + C TA = + C INPUT RETURN LOSS AND OUTPUT RETURN LOSS vs. FREQUENCY TA = + C TA = - C TA = + C RLOUT RLIN
4 , TYPICAL PERFORMANCE CURVES (TA = C) Saturated Output Power, PSAT (dbm) INPUT POWER VOLTAGE f = 1. GHz. V. V INPUT POWER AND VOLTAGE SATURATED FREQUENCY AND VOLTAGE f =. GHz. V. V. V. V PIN = dbm rd Order Intermodulation Distortion, IM3 (dbc) INPUT POWER AND TEMPERATURE f = 1. GHz + C - C INPUT POWER AND FREQUENCY f =. GHz f =.9 GHz TA = + C f =. GHz - C f = 1. GHz RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER AND VOLTAGE f1 = 1. GHz f = 1. GHz. V. V Output Power of Each Tone, POUT(each) (dbm)
5 , TYPICAL PERFORMANCE CURVES (TA = C) Current, ICC (ma) Gain, GS (db) Isolation, ISOL, (db) CURRENT vs. VOLTAGE Voltage, VCC (V) GAIN AND NOISE FIGURE vs. FREQUENCY AND VOLTAGE GS NF VCC =. V VCC =. V VCC =. V ISOLATION vs. FREQUENCY Noise Figure, NF (db) Current, ICC (ma) Gain, GS (db) nput Return Loss, RLIN (db) Output Return Loss, RLOUT (db) CURRENT vs. TEMPERATURE Temperature, TA ( C) GAIN vs. FREQUENCY AND TEMPERATURE - C TA = + C + C INPUT RETURN LOSS AND OUTPUT RETURN LOSS vs. FREQUENCY RLIN RLOUT
6 , TYPICAL PERFORMANCE CURVES (TA = C) Saturated Output Power, PSAT (dbm) INPUT POWER VOLTAGE f = 1. GHz. V. V INPUT POWER AND VOLTAGE SATURATED FREQUENCY AND VOLTAGE f =. GHz. V. V. V. V PIN = dbm rd Order Intermodulation Distortion, IM3 (dbc) INPUT POWER AND TEMPERATURE f = 1. GHz + C TA = + C INPUT POWER AND FREQUENCY f =. GHz f =. GHz - C f = 1. GHz RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER AND VOLTAGE f1 = 1. GHz f = 1. GHz. V. V Output Power of Each Tone, POUT(each) (dbm)
7 , TYPICAL SCATTERING PARAMETERS (TA = C) VCC = V, ICC = 13. ma FREQUENCY S11 S1 S1 S K (MHz) MAG ANG MAG ANG MAG ANG MAG ANG
8 , TYPICAL SCATTERING PARAMETERS (TA = C) VCC = V, ICC = 13.9 ma FREQUENCY S11 S1 S1 S K (MHz) MAG ANG MAG ANG MAG ANG MAG ANG
9 C1G, OUTLINE DIMENSIONS (Units in mm) PIN CONNECTIONS TEST CIRCUIT IN Ω.± ±.1 PACKAGE OUTLINE S (Top View) pf.1±.1 1.±.1 C1G ~.1 VCC 1 pf, 3, DOT ON BACK SIDE pf Ω OUT Marking is an example of 1. Input. GND 3. GND 3 1. Output. GND. VCC ORDERING INFORMATION (Solder Contains Lead) PART NUMBER MARKING QTY -E3 C1G 3K/reel -E3 C1H 3K/reel Note: Embossed tape, mm wide. Pins 1,, and 3 face perforated side of tape. ORDERING INFORMATION (Pb-Free) (Bottom View) PART NUMBER MARKING QTY -E3-A C1G 3K/reel -E3-A C1H 3K/reel Note: Embossed tape, mm wide. Pins 1,, and 3 face perforated side of tape. 3 1
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