Data Sheet. AMMP GHz High Gain Amplifier in SMT Package. Description. Features. Applications. Package Diagram. Functional Block Diagram

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1 AMMP- GHz High Gain Amplifier in SMT Package Data Sheet Description The AMMP- MMIC is a GaAs wide-band amplifier in a surface mount package designed for medium output power and high gain over the - GHz frequency range. The cascaded stages provide high gain while the single bias supply offers ease of use. It is fabricated using a PHEMT integrated circuit process. The RF input and output ports have matching circuitry for use in -ohms environments. The MMIC is a cost effective alternative to hybrid (discrete FET) amplifiers that require complex tuning and assembly processes. Package Diagram RFin Vd 1 7 RFout Pin Function 1 Vd RF_out 7 RF_in Features Surface Mount Package,. x. x 1. mm Wide Frequency Range - GHz High Gain: 17. db Typical Medium Output P1dB: 1. dbm Typical Input and Output Return Loss: <-1 db Typical Ohm Input and Output Match Single Supply Bias: 9 ma Typical Applications General purpose, wide band amplifier in communication systems or microwave instrumentation High Gain Amplifier Functional Block Diagram Vd 1.1uF 1pF RFin RFout Note: Package base: GND 7 AMMP- Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (V) ESD Human Body Model (1V) Refer to Avago Application Note AR: Electrostatic Discharge, Damage and Control. Note: MSL Rating = Level A

2 Electrical Specifications 1. Small/large signal data measured in a fully de-embedded test fixture at TA = degree Celsius.. Specifications are derived from measurements in a Ohm test environment. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity, or low noise matching.. All tested parameters guaranteed with measurement accuracy ±. db for NF and ± 1. db for gain. Table 1. RF Electrical Characteristics (T A = C, Freq=1GHz, Vd=.V, Idq=9mA) Parameter Min Typ. Max Unit Small-signal Gain, Gain db Noise Figure, NF.1 7. db Output Power at 1dB Gain Compression, P1dB 1. dbm Third Order Intercept Point, OIP. dbm Input Return Loss, RLin 11. db Output Return Loss, RLout 11. db Reverse Isolation, Isolation -. db Table. Recommended Operating Range Description Min. Typical Max. Unit Drain Supply Voltage, Vd V Drain Supply Current, Id ma Notes: 1. Ambient operation temperature TA = C unless otherwise noted.. Channel-to-board Thermal Resistance is measured using Infrared Microscopy method. Table. Thermal Properties Parameter Test Conditions Value Thermal Resistance, θ jc θ jc = C/W Note: Channel-to-board Thermal Resistance is measured using Infrared Microscopy method. Absolute Minimum and Maximum Ratings Table. Minimum and Maximum Ratings Description Min. Max. Unit Comments Drain Supply Voltage, Vd 7. V Total Drain Current, Id 1 ma RF Input Power, Pin dbm CW Power Dissipation, Pd 1. W Channel Temperature, Tch +1 C Storage Temperature, Tstg - +1 C Maximum Assembly Temperature, Tmax + C Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vd, Id, Pd and Pin were determined at an ambient temperature of C unless noted otherwise.

3 Selected performance plots All data measured on at Vd = V, Id = 9mA, Ta = C, and Ω at all ports. Gain (db) Figure 1. Gain Isolation (db) Figure. Isolation Input RL (db) Figure. Input Return Loss Output RL (db) Figure. Output Return Loss NF (db) Figure. Noise Figure OP1dB (dbm) Figure. P1dB Pout (dbm) GHz 1 GHz 7 GHz Id (ma) Pin (dbm) Figure 7. Pout and Id vs. Pin Note: These measurements are obtained using demo board with Ohm traces at input and output. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise matching.

4 Over Voltage plots All data measured on at Vd = V, Id = 9mA, Ta = C, and Ω at all ports. Gain (db) Vd=V Isolation (db) Vd=V Input RL (db) Vd=V Figure. Gain and Voltage Figure 9. Isolation and Voltage Figure 1. Input Return Loss and Voltage Output RL (db) Vd=V NF (db) 7 Vd=V OP1dB (dbm) Vd=V Figure 11. Output Return Loss and Voltage Figure. Noise Figure and Voltage Figure 1. P1dB and Voltage Note: These measurements are obtained using demo board with Ohm traces at input and output. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise matching.

5 Over Temperature Performance Plots All data measured on at Vd = V, Id = 9mA, Ta = C, and Ω at all ports Gain (db) - C C Isolation (db) C C Input RL (db) C - C Figure 1. Gain and Temperature Figure 1. Isolation and Temperature Figure. Input Return Loss and Temperature Output RL (db) C C Figure 17. Output Return Loss and Temperature NF (db) Figure 1. Noise Figure and Temperature - C C OP1dB (dbm) - C C Figure 19. P1dB and Temperature 1 9 Id (ma) 9 Figure. Id vs. Vd - C C... Vd (V) Note: These measurements are obtained using demo board with Ohm traces at input and output. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise matching.

6 Biasing and Operation The AMMP- only requires a single positive supply connected to the Vd pin (). The recommended supply voltage is V. The supply should be bypassed with a.1uf capacitor placed as close to the component as possible. The package base is the RF and DC ground connection. The biasing arrangement is shown in Figure 1. Figure shows a simplifies schematic for the amplifier die. All three stages are self-biased as shown. Each stage has feedback around it to control the gain, match and performance, resulting in excellent wideband performance. Also shown are the on-chip DC blocking capacitors for both the RFin and RFout pins. Please refer to the Absolute Maximum Ratings table for allowed DC and thermal conditions. The AMMP Packaged Devices are compatible with high volume surface mount PCB assembly processes. The PCB material and mounting pattern, as defined in the data sheet, optimizes RF performance and is strongly recommended. An electronic drawing of the land pattern is available upon request from Avago Sales & Application Engineering. Figure. Demonstration Board (available upon request) Figure 1. Typical Application Figure. Simplified MMIC Schematics

7 Typical Scattering Parameters Please refer to < for typical scattering parameters data. Package Dimension, PCB Layout and Tape and Reel information Please refer to Avago Technologies Application Note, AMxP-xxxx production Assembly Process (Land Pattern A). Part Number Ordering Information Part Number Devices per Container Container AMMP--BLKG 1 Antistatic Bag AMMP--TR1G 1 7 Reel AMMP--TRG 7 Reel For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright -1 Avago Technologies. All rights reserved. Obsoletes AV1-EN AV-1EN - July, 1