NPN Silicon RF Twin Transistor (with 2 Different Elements) in a 6-pin Lead-less Minimold. Part Number Order Number Quantity Package Supplying Form
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1 <R> <R> <R> Preliminary NPN Silicon RF Twin Transistor (with Different Elements) in a -pin Lead-less Minimold FEATURES Low voltage operation different built-in transistors (SC, SC) : Built-in high gain transistor ft =. GHz TYP., Se =. db IC = ma, f = GHz : Built-in low phase distortion transistor suited for OSC operation ft =. GHz TYP., Se =. db VCE = V, IC = ma, f = GHz -pin lead-less minimold package BUILT-IN TRANSISTORS -pin thin-type ultra super minimold part No. SC SC ORDERING IORMATION Part Number Order Number Quantity Package Supplying Form -A pcs (Non reel) -pin lead -less minimold mm wide embossed taping Data Sheet -T -T-A kpcs/reel () (Pb-Free) Pin ( Collector), Pin ( Base) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is pcs. CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. Page of
2 ABSOLUTE MAXIMUM RATINGS (TA = + C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9 9 V Collector to Emitter Voltage VCEO. V Emitter to Base Voltage VEBO. V Collector Current IC ma Total Power Dissipation 9 Ptot Note in elements Junction Temperature Tj C Storage Temperature Tstg to + C Note Mounted on. cm. mm (t) glass epoxy PCB mw R 9DS E J R ev.. P age of
3 ELECTRICAL CHARACTERISTICS (TA = + C) () Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Collector Cut-off Current ICBO VCB = V, IE = na Emitter Cut-off Current IEBO VBE = V, IC = na DC Current in hfe Note, IC = ma 7 in Bandwidth Product ft, IC = ma, f = GHz.. GHz Insertion Power in Se, IC = ma, f = GHz 7.. db Noise Figure, IC = ma, f = GHz, ZS = Zopt.. db Reverse Transfer Capacitance Cre Note VCB = V, IE =, f = MHz..7 pf () Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Collector Cut-off Current ICBO VCB = V, IE = na Emitter Cut-off Current IEBO VBE = V, IC = na DC Current in hfe Note VCE = V, IC = ma in Bandwidth Product () ft VCE = V, IC = ma, f = GHz.. GHz in Bandwidth Product () ft VCE = V, IC = ma, f = GHz.. GHz Insertion Power in () Se VCE = V, IC = ma, f = GHz.. db Insertion Power in () Se VCE = V, IC = ma, f = GHz.. db Noise Figure VCE = V, IC = ma, f = GHz, ZS = Zopt.9. db Reverse Transfer Capacitance Cre Note VCB =. V, IE =, f = MHz.. pf Notes. Pulse measurement: PW μs, Duty Cycle %. Collector to base capacitance when the emitter grounded hfe CLASSIFICATION Rank Marking FB/YFB vy hfe Value of 7 to hfe Value of to Page of
4 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = + C) Total Power Dissipation Ptot (mw) 9 Reverse Transfer Capacitance Cre (pf) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on Glass Epoxy PCB (. cm. mm (t) ) Elements in total 7 Ambient Temperature TA ( C) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE. f = MHz... Collector to Base Voltage VCB (V) Reverse Transfer Capacitance Cre (pf)..... REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = MHz Collector to Base Voltage VCB (V) Page of
5 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = V Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = V Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Base to Emitter Voltage VBE (V) Page of
6 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE μa 7 μa μa μa μa μa μa 9 μa μa IB = μa 7 Collector to Emitter Voltage VCE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE μa μa μa μa μa IB = μa 7 Collector to Emitter Voltage VCE (V) μa μa μa μa Page of
7 DC Current in hfe DC Current in hfe DC Current in hfe DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = V DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current in hfe DC Current in hfe DC CURRENT GAIN vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = V Page 7 of
8 in Bandwidth Product ft (GHz) in Bandwidth Product ft (GHz) in Bandwidth Product ft (GHz) GAIN BANDWIDTH PRODUCT VCE = V f = GHz GAIN BANDWIDTH PRODUCT f = GHz GAIN BANDWIDTH PRODUCT f = GHz in Bandwidth Product ft (GHz) in Bandwidth Product ft (GHz) GAIN BANDWIDTH PRODUCT VCE = V f = GHz GAIN BANDWIDTH PRODUCT f = GHz Page of
9 Insertion Power in Se (db) Insertion Power in Se (db) Insertion Power in Se (db) INSERTION POWER GAIN,, vs. FREQUENCY Se Frequency f (GHz) VCE = V IC = ma INSERTION POWER GAIN,, vs. FREQUENCY Se Frequency f (GHz) IC = ma INSERTION POWER GAIN,, vs. FREQUENCY Se Frequency f (GHz) IC = ma Insertion Power in Se (db) Insertion Power in Se (db) Insertion Power in Se (db) INSERTION POWER GAIN,, vs. FREQUENCY Se Frequency f (GHz) VCE = V IC = ma INSERTION POWER GAIN,, vs. FREQUENCY Frequency f (GHz) INSERTION POWER GAIN,, vs. FREQUENCY Se Frequency f (GHz) VCE = V IC = ma IC = ma Se Page 9 of
10 Remark The graph indicates nominal characteristics. Insertion Power in Se (db) INSERTION POWER GAIN,, vs. FREQUENCY Frequency f (GHz) IC = ma Se Page of
11 Insertion Power in Se (db) Insertion Power in Se (db) Insertion Power in Se (db) INSERTION POWER GAIN,, VCE = V f = GHz Se INSERTION POWER GAIN,, VCE = V f = GHz INSERTION POWER GAIN, VCE = V f = GHz Se Se Insertion Power in Se (db) Insertion Power in Se (db) Insertion Power in Se (db) INSERTION POWER GAIN,, VCE = V f = GHz Se INSERTION POWER GAIN, VCE = V f = GHz Se INSERTION POWER GAIN,, VCE = V f = GHz Se Page of
12 Insertion Power in Se (db) Insertion Power in Se (db) Insertion Power in Se (db) INSERTION POWER GAIN,, f = GHz Se INSERTION POWER GAIN,, f = GHz INSERTION POWER GAIN, f = GHz Se Se Insertion Power in Se (db) Insertion Power in Se (db) Insertion Power in Se (db) INSERTION POWER GAIN, f = GHz INSERTION POWER GAIN,, f = GHz Se Se INSERTION POWER GAIN,, f = GHz Se Page of
13 Insertion Power in Se (db) Insertion Power in Se (db) Insertion Power in Se (db) f = GHz INSERTION POWER GAIN,, Se INSERTION POWER GAIN,, f = GHz INSERTION POWER GAIN, f = GHz Se Se Page of
14 Noise Figure (db) Noise Figure (db) Noise Figure (db) VCE = V f = GHz VCE = V f =. GHz VCE = V f = GHz Associated in (db) Associated in (db) Associated in (db) Noise Figure (db) Noise Figure (db) Noise Figure (db) VCE = V f = GHz VCE = V f =. GHz VCE = V f = GHz Associated in (db) Associated in (db) Associated in (db) Page of
15 Noise Figure (db) Noise Figure (db) Noise Figure (db) f = GHz f =. GHz f = GHz Associated in (db) Associated in (db) Associated in (db) Noise Figure (db) Noise Figure (db) Noise Figure (db) f = GHz f =. GHz f = GHz Associated in (db) Associated in (db) Associated in (db) Page of
16 Noise Figure (db) Noise Figure (db) Noise Figure (db) f = GHz f =. GHz f = GHz Associated in (db) Associated in (db) Associated in (db) Page of
17 S-PARAMETERS S-parameters and noise parameters are provided on our Web site in a format (SP) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL Page 7 of
18 <R> PACKAGE DIMENSIONS -PIN LEAD-LESS MINIMOLD () (UNIT: mm) ±...± vy (Bottom View). ±.. + C E C (Top View) PIN CONNECTIONS. Collector (). Emitter (). Collector (). Base (). Emitter (). Base () B E B Page of
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NEC's NPN SILICON TRANSISTOR
NEC's NPN SILICON TRANSISTOR NE81M1 FEATURES OUTLINE DIMENSIONS (Units in mm) NEW MINIATURE M1 PACKAGE: Small transistor outline 1. X. X. mm Low profile /. mm package height Flat lead style for better
DATA SHEET NE68133 / 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Document No. P6EJVDS (th edition) Date Published March 997 N DATA SHEET SILICON TRANSISTOR NE68 / SC8 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The NE68 / SC8 is an NPN
Table 1: Device summary Order code Marking Package Packing 2STR SOT-23 Tape and reel
Low voltage fast-switching PNP power transistor Datasheet - production data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23
2STR1160. Low voltage fast-switching NPN power transistor. Features. Description. Applications
Low voltage fast-switching NPN power transistor Datasheet - production data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23
CPH6071 CPH6071. Features. Specifications. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN CPH61 CPH61 Features NPN / PNP Epitaxial Planar Silicon Transistors Video Output Driver,High-Frequency Amplifier Applications Composite type with NPN transistor and PNP transistor
CYStech Electronics Corp.
Page No. : 1/7 PNP Epitaxial Planar Transistor BVCEO -V IC -1A RCE(SAT) 32mΩ(typ.) Features Low VCE(SAT), VCE(SAT)= -.16V (Typ.) @ IC/IB=-5mA/-5mA High breakdown voltage, BVCEO=-V Complementary to BTD1782N3
DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
DATA SHEET SILICON POWER TRANSISTOR 2SA1847 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1847 is a power transistor developed for high-speed switching and features a high hfe at low
15C01M. Bipolar Transistor 15V, 0.7A, Low VCE(sat) NPN Single MCP. Applications. Features. Specifications. Low-frequency Amplifier, muting circuit
Ordering number : ENA 1C1M Bipolar Transistor 1V,.A, Low VCE(sat) NPN Single MCP http://onsemi.com Applications Low-frequency Amplifier, muting circuit Features Large current capacity Low collector-to-emitter
HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04
HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES Super low noise figure and high associated gain NF = 0.45 db TYP., Ga =
DATA SHEET NPN SILICON POWER TRANSISTOR. 55 to +150 C 150 C Maximum
DATA SHEET NPN SILON POWER TRANSISTOR 2SD882 NPN SILON POWER TRANSISTOR DESCRIPTION The 2SD882 is NPN silicon transistor suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC
SIEGET 25 BFP420. NPN Silicon RF Transistor
NPN Silicon RF Transistor For High Gain Low Noise Amplifiers For Oscillators up to GHz Noise Figure F = 1.05 at 1.8 GHz Outstanding G ms = 20 at 1.8 GHz Transition Frequency f T = 25 GHz Gold metalization
PT23T2222A NPN switching transistor
NPN switching transistor Description NPN switching transistor in a SOT-23 plastic package. 1 - Base 3 - Collector Feature 2 - Emitter High current (max. 600 ma) Lead finish:100% matte Sn(Tin) Mounting
2SD1012. Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single SPA. Specifications. Absolute Maximum Ratings at Ta=25 C
Ordering number : EN066F SD1 Bipolar Transistor 1V, 0.A, Low VCE(sat), NPN Single SPA http://onsemi.com Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Collector-to-Base
MCH6101 / MCH6201 MCH6101 / MCH6201. Applications. Features. Specifications ( ) : MCH6101. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN68A PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT processes.
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER. Part Number Order Number Package Marking Supplying Form
DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3226TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER The PC3226TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF
DISCONTINUED PC3240TB BIPOLAR ANALOG INTEGRATED CIRCUIT 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION FEATURES APPLICATIONS ORDERING INFORMATION
DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER The PC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER. Part Number Order Number Package Marking Supplying Form
DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3225TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER The PC3225TB is a silicon germanium (SiGe) monolithic integrated circuits designed as IF
NPN SILICON TRANSISTOR
TK NPN SILICON TRANSISTOR FEATURES OUTLINE DIMENSIONS (Units in mm) NEW M03 PACKAGE: Smallest transistor outline package available Low profile/0.59 mm package height Flat lead style for better RF performance
30A02CH. Bipolar Transistor 30V, 0.7A, Low VCE(sat) PNP Single CPH3. Applications. Features. Specifications
Ordering number : EN8A ACH Bipolar Transistor V,.A, Low VCE(sat) PNP Single CPH http://onsemi.com Applications Low-frequency Amplifier, high-speed switching, small motor drive Features Large current capacitance
MRF581 MRF581G MRF581A MRF581AG
G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS *G Denotes RoHS Compliant, Pb free Terminal Finish Features Low Noise - 2.5 db @ 500 MHZ Gain at Optimum Noise Figure = 15.5 db @ 500 MHz Ftau - 5.0 GHz
(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP
Ordering number : EN6D SA141/SC64 Bipolar Transistor (-)1V, (-)A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
DISCONTINUED PC3232TB BIPOLAR ANALOG INTEGRATED CIRCUIT 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION FEATURES APPLICATIONS
DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT PC3232TB 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER The PC3232TB is a silicon germanium (SiGe) monolithic integrated circuit designed as IF
(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA. Large current capacity High-speed switching
Ordering number : EN8A SA169/SC61 Bipolar Transistor (-)V, (-)1A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT
Low-frequency Amplifer, high-speed switching small motor drive, muting circuit
Ordering number : EN16A CMH Bipolar Transistor V,.A, Low VCE(sat) NPN Single MCPH http://onsemi.com Applications Low-frequency Amplifer, high-speed switching small motor drive, muting circuit Features
MCH6541. Bipolar Transistor. ( )30V, ( )3A, Low VCE(sat) Complementary Dual MCPH6
Ordering number : EN8949A MCH641 Bipolar Transistor ( )V, ( )A, Low VCE(sat) Complementary Dual MCPH6 http://onsemi.com Applicaitons MOSFET gate drivers, relay drivers, lamp drivers, motor drivers Features
3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER. Part Number Order Number Package Marking Supplying Form C3V
BIPOLAR ANALOG INTEGRATED CIRCUIT μpc3239tb 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μpc3239tb is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB.
Silicon Bipolar Low Noise Microwave Transistors
Silicon Bipolar Low Noise Microwave Transistors MP42141 Features Case Styles Low Intrinsic Noise Figure (2.3dB Typical @ 1.0 GHz) High Power Gain At 1.0 GHz 18.0 db Typical Gold Metalization Hermetic and
2SA2016 / 2SC5569 2SA2016 / 2SC5569. Applications. Features. Specifications ( ) : 2SA2016. SANYO Electric Co.,Ltd. Semiconductor Company
Ordering number : ENN69B SA16 / SC69 SA16 / SC69 PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption
DATA SHEET NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING 15 A
DATA SHEET SILICON POWER TRANSISTOR 2SC2335 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching,
500 mw When mounted on ceramic substrate (250mm 2 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C
Ordering number : ENC SA1416/SC646 Bipolar Transistor ( )1V, ( )1A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features Adoption of FBET, MBIT processes High breakdown voltage and large current
2SA608N/2SC536N. Bipolar Transistor. ( )50V, ( )150mA, Low VCE(sat) (PNP)NPN Single NPA-WA. Applicaitons. Features. Specifications ( ) : 2SA608N
Ordering number : EN64B SA68N/SC6N Bipolar Transistor ( )V, ( )ma, Low VCE(sat) (PNP)NPN Single -WA http://onsemi.com Applicaitons Capable of being used in the low frequency to high frequency range Features
2SD1835. Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single NP. Applications
Ordering number : EN18B SD18 Bipolar Transistor V, A, Low VCE(sat), NPN Single NP http://onsemi.com Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption
2SA1743 SILICON POWER TRANSISTOR DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING. PACKAGE DRAWING (UNIT: mm) FEATURES
DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed switching and features a high hfe at low
2SC2873 2SC2873. Power Amplifier Applications Power Switching Applications. Maximum Ratings (Ta = 25 C)
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm Low saturation voltage: VCE (sat) =. V (max) (IC = A) High-speed switching
Relay drivers, high-speed inverters, converters, and other general high-current switching applications
Ordering number : EN8C SB/SD8 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, high-speed inverters, converters, and other general high-current
DATA SHEET NE68039 / 2SC4095 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
Document No. P1367EJV1DS (nd edition) Date Published March 1997 N DATA SHEET SILICON TRANSISTOR NE6839 / SC95 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR PINS MINI MOLD DESCRIPTION The
CPH6532. Bipolar Transistor 50V, 1A, Low VCE(sat) NPN Dual CPH6. Applications. Features. Specifications
Ordering number : ENA0A CPH6 Bipolar Transistor 0V, 1A, Low VCE(sat) NPN Dual CPH6 http://onsemi.com Applications Relay drivers, lamp drivers, motor drivers, flash Features Composite type with two NPN
High-speed switching applications (switching regulator, driver circuit) Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V
Ordering number : ENA9B Bipolar Transistor V, 1A, Low VCE (sat) NPN TO-F-SG http://onsemi.com Applications High-speed switching applications (switching regulator, driver circuit) Features Adoption of MBIT
2SB1201/2SD Marking Packing Type (TP-FA) : TL Electrical Connection (TP, TP-FA)
Ordering number : EN11C SB1/SD181 SANYO Semiconductors DATA SHEET SB1/SD181 Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes
SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS
DESCRIPTION BIPOLAR ANALOG INTEGRATED CIRCUIT PC8231TK SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS The PC8231TK is a silicon germanium carbon (SiGe:C) monolithic integrated circuit designed
MCH4009. RF Transistor 3.5V, 40mA, ft=25ghz, NPN Single MCPH4. Features. Specifications
Ordering number : ENA089A MCH4009 RF Transistor.5V, 40mA, ft=25ghz, NPN Single MCPH4 http://onsemi.com Features Low-noise use : NF=1.1dB typ (f=2ghz) High cut-off frequency : ft=25ghz typ (VCE=V) Low operating
Small Signal General Purpose Transistors (PNP) BC556/BC557/BC558. Features. Mechanical Data. Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Small Signal General Purpose Transistors (PNP) Small Signal General Purpose Transistors (PNP) Features PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications RoHS compliance Mechanical
High-speed switching Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm) High allowable power dissipation
Ordering number : EN811A MCH14/MCH4 Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single MCPH http://onsemi.com Applicaitons Relay drivers, lamp drivers, motor drivers, flash Features Adoption
3 Volt, Low Noise High ft Silicon Transistor. MP4T6310 Series. Features SOT-23. Description SOT-143. Chip
3 Volt, Low Noise High ft Silicon Transistor Features High Performance at VCE = 3V Low Noise Figure at Small Currents (.3- ma) High Gain (14 db) at 1mA Collector Current High ft (14 GHz) Available on Tape
Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers
Ordering number : EN181B SD168 Bipolar Transistor V, A, Low VCE(sat), NPN Single PCP http://onsemi.com Applications Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers Features
2N2219A 2N2222A HIGH SPEED SWITCHES
2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed
Relay drivers, high-speed inverters, converters, and other general high-current switching applications
Ordering number : EN9C SB11/SD181 Bipolar Transistor ( )1V, ( )A, Low VCE(sat) (PNP)NPN Single TP/TP-FA http://onsemi.com Applications Relay drivers, high-speed inverters, converters, and other general
High-speed switching Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) High allowable power dissipation
Ordering number : EN18B MCH1/MCH Bipolar Transistor ( )V, ( )A, Low VCE(sat), (PNP)NPN Single MCPH http://onsemi.com Applicaitons DC / DC converters, relay drivers, lamp drivers, motor drivers, flash Features