2N2219A 2N2222A HIGH SPEED SWITCHES

Transcription

1 2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. 2N2219A approved to CECC , 2N2222A approved to CECC available on request. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E =0) 75 V VCEO Collector-Emitter Voltage (IB =0) 40 V VEBO Emitter-Base Voltage (IC =0) 6 V I C Collector Current 0.8 A Ptot Total Dissipation at Tamb 25 o C for 2N2219A for 2N2222A at T case 25 o C for 2N2219A for 2N2222A T stg Storage Temperature -65 to 200 Tj Max. Operating Junction Temperature W W W W o C o C November /8

2 THERMAL DATA TO-39 TO-18 Rthj-case Rt hj- amb Thermal Resistance Junction-Case Max Thermal Resistance Junction-Ambient Max o C/W o C/W ELECTRICAL CHARACTERISTICS (Tcase =25 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO ICEX I BEX I EBO V (BR)CBO V (BR)CEO V(BR)EBO V CE(sat) Collector Cut-off Current (IE =0) Collector Cut-off Current (V BE =-3V) Base Cut-off Current (VBE =-3V) Emitter Cut-off Current (IC =0) Collector-Base Breakdown Voltage (I E =0) Collector-Emitter Breakdown Voltage (I B =0) Emitter-Base Breakdown Voltage (IC =0) Collector-Emitter Saturation Voltage V CB =60V VCB =60V Tca se =150 o C VCE = 60 V 10 na V CE = 60 V 20 na V EB =3V 10 na I C =10µA 75 V I C =10mA 40 V IE=10µA 6 V I C =150mA IC =500mA I B =15mA IB=50mA V BE(sat) Base-Emitter I C =150mA I B =15mA Saturation Voltage IC =500mA IB=50mA hfe DC Current Gain IC =0.1mA VCE =10V I C =1mA V CE =10V IC =10mA VCE =10V I C =150mA V CE =10V IC =500mA VCE =10V IC =150mA VCE =1V IC =10mA VCE =10V T amb =-55 o C h fe Small Signal Current Gain I C =1mA V CE =10V f=1khz IC =10mA VCE =10V f=1khz f T Transition Frequency I C =20mA V CE =20V 300 MHz f = 100 MHz C EBO Emitter Base I C =0 V EB =0.5V f=100khz 25 pf Capacitance CCBO Collector Base Capacitance IE =0 VCB = 10 V f = 100 KHz 8 pf Re(hie) Real Part of Input IC =20mA VCE =20V 60 Ω Impedance f = 300MHz Pulsed: Pulse duration = 300 µs, duty cycle 1% na µa V V V V 2/8

3 ELECTRICAL CHARACTERISTICS (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit NF Noise Figure IC =0.1mA VCE =10V 4 db f=1khz Rg=1KΩ h ie Input Impedance I C =1mA V CE =10V I C =10mA V CE =10V hre Reverse Voltage Ratio IC =1mA VCE =10V IC =10mA VCE =10V h oe Output Admittance I C =1mA V CE =10V IC =10mA VCE =10V t d Delay Time V CC =30V I C = 150 ma IB1 =15mA VBB =-0.5V t r Rise Time V CC =30V I C = 150 ma IB1 =15mA VBB =-0.5V ts Storage Time VCC =30V IC =150mA I B1 =-I B2 =15mA tf Fall Time VCC =30V IC =150mA IB1 =-IB2 =15mA rbb Cb c Feedback Time IC =20mA VCE =20V Constant f = 31.8MHz Pulsed: Pulse duration = 300 µs, duty cycle 1% See test circuit Ω Ω µs µs 10 ns 25 ns 225 ns 60 ns 150 ps 3/8

4 Normalized DC Current Gain. Collector-emitter Saturation Voltage. Contours of Constant Narrow Band Noise Figure. Switching Time vs. Collector Current. 4/8

5 Test Circuit fot td, tr. PULSE GENERATOR : tr 20 ns PW 200 ns ZIN =50Ω TO OSCILLOSCOPE tr 5.0 ns Z IN < 100 KΩ CIN 12 pf Test Circuit fot td, tr. PULSE GENERATOR : TO OSCILLOSCOPE : PW 10 µs tr < 5.0 ns Z IN =50Ω Z IN > 100 KΩ T C 5.0 ns C IN 12 pf 5/8

6 TO-18 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D E F G H I L 45 o 45 o G D A H I F E L B C /8

7 TO-39 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D E F G H I L 45 o (typ.) G D A H I F E L B P008B 7/8

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