BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED
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1 BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS DESCRIPTION The BUH1015and BUH1015HI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. TO ISOWATT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) 1500 V V CEO Collector-Emitter Voltage (I B = 0) 700 V VEBO Emitter-Base Voltage (IC =0) 10 V I C Collector Current 14 A ICM Collector Peak Current (tp <5ms) 18 A IB Base Current 8 A I BM Base Peak Current (t p <5ms) 11 A Ptot Total Dissipation at Tc =25 o C W T stg Storage Temperature -65 to 150 T j Max. Operating Junction Temperature 150 o C o C April /8
2 THERMAL DATA TO-218 ISOWATT218 Rthj-case Thermal Resistance Junction-case Max o C/W ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES I EBO VCEO(sus) VEBO V CE(sat) VBE(sat) Collector Cut-off Current (VBE =0) Emitter Cut-off Current (IC =0) Collector-Emitter Sustaining Voltage Emitter-Base Voltage (IC =0) Collector-Emitter Saturation Voltage VCE =1500V VCE =1500V Tj = 125 o C V EB =5V 100 µa IC = 100 ma 700 V IE=10mA 10 V I C =10A I B =2A 1.5 V Base-Emitter Saturation Voltage h FE DC Current Gain I C =10A V CE =5V IC =10A VCE =5V Tj=100 o C ts t f ts tf RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time IC =10A IB=2A 1.5 V V CC =400V I C =10A IB1 =2A IB2= -6A IC = 10 A f = Hz IB1 =2A IB2 =-6A Vceflyback = 1200 sin π t V ma ma µs ns µs ns t s tf INDUCTIVE LOAD Storage Time Fall Time IC =6A f=64khz I B1 =1A Vbeoff =-2V Vceflyback = 1100 sin π t V µs ns Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area For TO-218 Safe Operating Area For ISOWATT218 2/8
3 Thermal Impedance for TO-218 Thermal Impedance for ISOWATT218 Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/8
4 Power Losses at 64 KHz Switching Time Inductive Load at 64KHz (see figure 2) Reverse Biased SOA BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hfe at T j = 100 o C (line scan phase). On the other hand, negative base current I B2 must be provided the transistor to turn off (retrace phase). Most of the dissipation, especially in the deflection application, occurs at switch-off so it is essential to determine the value of I B2 which minimizes power losses, fall time t f and, consequently, T j.a new set of curves have been defined to give total power losses, t s and t f as a function of I B1 at 64 KHz scanning frequencies for choosing the optimum drive. The test circuit is illustrated in figure 1. The values of L and C are calculated from the following equations: 1 2 L (I C) 2 = 1 2 C (V CEfly) 2 1 ω=2πf= L C Where I C = operating collector current, V CEfly = flyback voltage, f= frequency of oscillation during retrace. 4/8
5 Figure 1: Inductive Load Switching Test Circuits. Figure 2: Switching Waveforms in a Deflection Circuit 5/8
6 TO-218 (SOT-93) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A C D E F G H L L L L R Ø F H G C D A E L5 L6 L3 L2 R P025A 6/8
7 ISOWATT218 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A C D D E F G H L L L L L L M N U L3 N H G C F D A E L2 D1 L5 L6 M U L1 L P025C 7/8
8 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequencesof use of such information nor for any infringementof patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under anypatent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publicationsupersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are notauthorized for useas critical components in life support devices or systems without express written approvalof SGS-THOMSON Microelectonics SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China- France - Germany - Hong Kong - Italy - Japan- Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A... 8/8
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