3.4 A 2.1 A. Symbol Parameter Value Unit

Transcription

1 BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR BUZ80 BUZ80FI TYPE VDSS R DS(on) ID 800 V 800 V < 4 Ω < 4 Ω 3.4 A 2.1 A TYPICAL R DS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 o C LOW INPUT CAPACITANCE LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CONSUMER AND INDUSTRIAL LIGHTING DC-AC INVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLY (UPS) TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BUZ80 BUZ80FI V D S Drain-source Voltage (V GS = 0) 800 V V DG R Drain- gate Voltage (R GS = 20 kω) 800 V VGS Gate-source Voltage ± 20 V I D Drain Current (continuous) at T c = 25 o C A I D Drain Current (continuous) at T c = 100 o C A ID M( ) Drain Current (pulsed) A Ptot Total Dissipation at Tc = 25 o C W Derating Factor W/ o C VISO Iulation Withstand Voltage (DC) 2000 V Tstg Storage Temperature -65 to 150 T j Max. Operating Junction Temperature 150 ( ) Pulse width limited by safe operating area o C o C April /10

2 THERMAL DATA TO-220 ISOWATT220 Rthj-cas e Thermal Resistance Junction-case Max Rthj-amb Rthc- sin k T l Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W o C/W o C/W o C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I A R E AS EAR I A R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR, VD D = 50 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 3.4 A 180 mj 4.8 mj 2.1 A ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) OFF V (BR)DSS IDS S I G SS Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VD S = 0) I D = 250 µa V G S = V VDS = Max Rating VDS = Max Rating x 0.8 Tc = 125 o C V GS = ± 20 V ± 100 na µa µa ON ( ) V G S(th) Gate Threshold Voltage V DS = V GS I D = 1 ma V RDS(on) Static Drain-source On Resistance VGS = 10 V I D = 1.7 A V GS = 10 V I D = 1.7 A T c = 100 o C ID(on) On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V Ω Ω 3.4 A DYNAMIC gfs ( ) C iss C oss C rss Forward Traconductance Input Capacitance Output Capacitance Reverse Trafer Capacitance VDS > ID(on) x RD S(on)max ID = 1.7 A S V DS = 25 V f = 1 MHz V G S = pf pf pf 2/10

3 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON t d(on) t r Turn-on Time Rise Time V DD = 30 V I D = 2.1 A R G = 50 Ω V GS = 10 V (see test circuit, figure 3) (di/dt) on Turn-on Current Slope VDD = 640 V ID = 3 A RG = 50 Ω VGS = 10 V (see test circuit, figure 5) Q g Q gs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 400 V I D = 3 A V GS = 10 V A/µs 55 nc nc nc SWITCHING OFF tr(voff) tf t c Off-voltage Rise Time Fall Time Cross-over Time VDD = 640 V ID = 3 A RG = 50 Ω VGS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE I S D I SDM ( ) Source-drain Current Source-drain Current (pulsed) VSD ( ) Forward On Voltage ISD = 6 A VGS = V t rr Reverse Recovery I SD = 3 A di/dt = 100 A/µs Time V DD = 80 V T j = 150 o C Qrr IRRM Reverse Recovery Charge Reverse Recovery Current (see test circuit, figure 5) ( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ) Pulse width limited by safe operating area A A µc A Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220 3/10

4 Thermal Impedeance For TO-220 Thermal Impedance For ISOWATT220 Derating Curve For TO-220 Derating Curve For ISOWATT220 Output Characteristics Trafer Characteristics 4/10

5 Traconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variatio Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/10

6 Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/10

7 Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time 7/10

8 TO-220 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A C D D E F F F G G H L L L L L L DIA F G D1 C D A E L2 G1 H2 F1 Dia. L5 L7 L9 F2 L6 L4 P011C 8/10

9 ISOWATT220 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D E F F F G G H L L L L L Ø H G B D A E L6 L7 L3 Ø F1 F F2 G L2 L4 P011G 9/10

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