STP30NE06L STP30NE06LFP
|
|
- Kathryn Singleton
- 5 years ago
- Views:
Transcription
1 STP30NE06L STP30NE06LFP N - CHNNEL 60V Ω TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS(on) I D STP30NE06L STP30NE06LFP 60 V 60 V TYPICL RDS(on) = Ω 100% VLNCHE TESTED LOW GTE CHRGE PPLICTION ORIENTED CHRCTERIZTION <0.05Ω <0.05Ω DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting traistor shows extremely high packing deity for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. PPLICTIONS DC MOTOR CONTROL DC-DC & DC-C CONVERTERS SYNCHRONOUS RECTIFICTION TO-220 TO-220FP INTERNL SCHEMTIC DIGRM BSOLUTE MXIMUM RTINGS Symbol Parameter Value Unit STP30NE06L STP30NE06LFP V DS Drain-source Voltage (V GS =0) 60 V VDGR Drain- gate Voltage (RGS =20kΩ) 60 V V GS Gate-source Voltage ± 20 V I D Drain Current (continuous) at T c =25 o C I D Drain Current (continuous) at T c = 100 o C IDM( ) Drain Current (pulsed) P tot Total Dissipation at T c =25 o C W Derating Factor W/ o C V ISO Iulation Withstand Voltage (DC) 2000 V T stg Storage Temperature -65 to 175 T j Max. Operating Junction Temperature 175 ( ) Pulse width limited by safe operating area March 1999 o C o C 1/9
2 THERML DT TO-220 TO-220FP Rthj-case Thermal Resistance Junction-case Max R thj-amb R thc-sink T l Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W o C/W o C/W o C VLNCHE CHRCTERISTICS Symbol Parameter Max Value Unit I R valanche Current, Repetitive or Not-Repetitive 20 (pulse width limited by T j max) E S Single Pulse valanche Energy (starting T j =25 o C, I D =I R,V DD =50V) 100 mj ELECTRICL CHRCTERISTICS (Tcase =25 o C unless otherwise specified) OFF Symbol Parameter Test Conditio Min. Typ. Max. Unit V (BR)DSS Drain-source Breakdown Voltage I D =250µ V GS =0 60 V I DSS I GSS Zero Gate Voltage Drain Current (V GS =0) Gate-body Leakage Current (VDS =0) V DS =MaxRating V DS =MaxRating T c = 125 o C V GS = ± 20 V ± 100 n 1 10 µ µ ON ( ) Symbol Parameter Test Conditio Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage V DS =V GS I D = 250 µ V R DS(on) Static Drain-source On Resistance V GS =5V I D =15 V GS =10V I D =15 I D(on) On State Drain Current V DS >I D(on) xr DS(on )max V GS =10V Ω Ω 30 DYNMIC Symbol Parameter Test Conditio Min. Typ. Max. Unit g fs ( ) Forward Traconductance V DS >I D(on) xr DS(on )max I D = S C iss C oss C rss Input Capacitance Output Capacitance Reverse Trafer Capacitance V DS =25V f=1mhz V GS = pf pf pf 2/9
3 ELECTRICL CHRCTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditio Min. Typ. Max. Unit td(on) t r Q g Q gs Q gd Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =30V ID=15 R G =4.7 Ω V GS =4.5V (Resistive Load, see fig. 3) V DD =48V I D =30 V GS =5V nc nc nc SWITCHING OFF Symbol Parameter Test Conditio Min. Typ. Max. Unit t d(off) tf t r(voff) t f t c Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time V DD =30V I D =15 RG=4.7 Ω VGS =4.5V (Resistive Load, see fig. 3) V DD =48V I D =30 R G =4.7 Ω V GS =4.5V (Inductive Load, see fig. 5) SOURCE DRIN DIODE Symbol Parameter Test Conditio Min. Typ. Max. Unit I SD I SDM ( ) Source-drain Current Source-drain Current (pulsed) V SD ( ) Forward On Voltage I SD =30 V GS =0 1.5 V t rr Reverse Recovery I SD = 30 di/dt = 100 /µs 80 Time V DD =30V T j =150 o C Qrr IRRM Reverse Recovery Charge Reverse Recovery Current (see test circuit, fig. 5) µc ( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ) Pulse width limited by safe operating area Safe Operating rea for TO-220 Safe Operating rea for TO-220FP 3/9
4 Thermal Impedance for TO-220 Thermal Impedance forto-220fp Output Characteristics Trafer Characteristics Traconductance Static Drain-source On Resistance 4/9
5 Gate Charge vs Gate-source Voltage Capacitance Variatio Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9
6 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching nd Diode Recovery Times 6/9
7 TO-220 MECHNICL DT DIM. mm inch MIN. TYP. MX. MIN. TYP. MX C D D E F F F G G H L L L L L L DI D1 F G C D E L2 G1 H2 F1 Dia. L5 L7 L9 F2 L6 L4 P011C 7/9
8 TO-220FP MECHNICL DT DIM. mm inch MIN. TYP. MX. MIN. TYP. MX B D E F F F G G H L L L L L Ø H G B D E L6 L7 L3 F1 F F2 G L2 L4 8/9
9 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no respoibility for the coequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licee is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy ll Rights Reserved STMicroelectronics GROUP OF COMPNIES ustralia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.. 9/9
STP60NE06L-16 STP60NE06L-16FP
STP60NE06L-16 STP60NE06L-16FP N - CHNNEL 60V - 0.014Ω - 60 TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS(on) I D STP60NE06L-16 STP60NE06L-16FP 60 V 60 V
More informationSTP75NE75 STP75NE75FP
STP75NE75 STP75NE75FP N - CHNNEL 75V - 0.01Ω - 75 TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS(on) I D STP75NE75 STP75NE75FP 75 V 75 V < 0.013 Ω < 0.013 Ω TYPICL RDS(on) = 0.01 Ω EXCEPTIONL dv/dt
More informationSTP55NE06 STP55NE06FP
STP55NE06 STP55NE06FP N - CHNNEL ENHNCEMENT MODE SINGLE FETURE SIZE POWER MOSFET TYPE V DSS R DS(on) I D STP55NE06 STP55NE06FP 60 V 60 V
More informationN - CHANNEL 600V Ω A TO-220/TO-220FP PowerMESH ΙΙ MOSFET 4.2 A 4.2 A. Symbol Parameter Value Unit
STP4NC60 STP4NC60FP N - CHNNEL 600V - 1.8 Ω - 4.2 TO-220/TO-220FP PowerMESH ΙΙ MOSFET PRELIMINRY DT TYPE VDSS RDS(on) ID STP4NC60 STP4NC60FP 600 V 600 V
More informationPRELIMINARY DATA TYPE V DSS R DS(on) I D STW8NB V < 1.5 Ω 8 A
STW8NB100 N - CHNNEL 1000V - 1.2Ω - 8 - TO-247 PowerMESH MOSFET PRELIMINRY DT TYPE V DSS R DS(on) I D STW8NB100 1000 V < 1.5 Ω 8 TYPICL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CPBILITY ± 30V GTE TO SOURCE
More information9.5 A 6.4 A. Symbol Parameter Value Unit
STW9NA60 STH9NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS(on) I D STW9NA60 STH9NA60FI 600 V 600 V
More informationSTP12NB30 STP12NB30FP
STP12NB30 STP12NB30FP N - CHNNEL ENHNCEMENT MODE PowerMESH MOSFET PRELIMINRY DT TYPE V DSS R DS(on) I D STP3NB60 STP12NB30FP 300 V 300 V
More informationSTH15NA50/FI STW15NA50
STH15N50/FI STW15N50 N - CHNNEL ENHNCEMENT MODE FST POWER MOS TRNSISTOR TYPE VDSS RDS(on) ID STH15N50 STH15N50FI STW15N50 500 V 500 V 500 V TYPICL R DS(on) = 0.33 Ω
More informationIRFP460. N - CHANNEL 500V Ω - 20 A - TO-247 PowerMESH MOSFET
IRFP460 N - CHANNEL 500V - 0.22 Ω - 20 A - TO-247 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRFP460 500 V < 0.27 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY
More informationObsolete Product(s) - Obsolete Product(s)
STP80NE03L-06 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE V DSS R DS(on) I D STP80NE03L-06 30 V < 0.006 Ω 80 A TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE
More informationN - CHANNEL 100V mω - 180A - ISOTOP POWER MOSFET
STE180N10 N - CHANNEL 100V - 5.5 mω - 180A - ISOTOP POWER MOSFET TYPE V DSS R DS(on) I D STE180N10 100 V < 7 mω 180 A TYPICAL RDS(on) = 5.5 mω 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE
More informationSTW9NB80. N-CHANNEL 800V Ω - 9.3A - TO-247 PowerMESH MOSFET
STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247 PowerMESH MOSFET TYPE V DSS R DS(on) I D STW9NB80 800 V < 1 Ω 9.3 A TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE
More informationSTE53NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
N - CHNNEL ENHNCEMENT MODE FST POWER MOS TRNSISTOR TYPE V DSS R DS(on) I D STE53N50 500 V < 0.085 Ω 53 TYPICL RDS(on) = 0.075 Ω HIGH CURRENT POWER MODULE VLNCHE RUGGED TECHNOLOGY VERY LRGE SO - LRGE PEK
More informationN - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH MOSFET 4 A 4 A. Symbol Parameter Value Unit
STP4NB80 STP4NB80FP N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH MOSFET TYPE V DSS R DS(on) I D STP4NB80 STP4NB80FP 800 V 800 V 3.3 Ω 3.3 Ω 4 A 4 A TYPICAL R DS(on) = 3 Ω EXTREMELY HIGH dv/dt
More informationSTP36NF06 STP36NF06FP
STP36NF06 STP36NF06FP N-CHANNEL 60V - 0.032 Ω - 30A TO-220/TO-220FP STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP36NF06 STP36NF06FP 60 V 60 V TYPICAL R DS (on) = 0.032 Ω
More informationIRF830. N - CHANNEL 500V Ω - 4.5A - TO-220 PowerMESH MOSFET
N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET TYPE V DSS R DS(on) I D 500 V < 1.5 Ω 4.5 A TYPICAL R DS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC
More informationSTS7NF60L N-CHANNEL 60V Ω - 7.5A SO-8 STripFET II POWER MOSFET
N-CHANNEL 60V - 0.017 Ω - 7.5A SO-8 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STS7NF60L 60 V < 0.0195 Ω 7.5 A TYPICAL R DS (on) = 0.017 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
More informationIRF830. N - CHANNEL 500V Ω - 4.5A - TO-220 PowerMESH MOSFET
IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRF830 500 V < 1.5 Ω 4.5 A TYPICAL R DS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY
More informationSTW20NB50. N - CHANNEL 500V Ω - 20A - TO-247 PowerMESH MOSFET
N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE V DSS R DS(on) I D 500 V < 0.25 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE
More informationSTS5PF30L P-CHANNEL 30V Ω - 5A SO-8 STRIPFET POWER MOSFET
P-CHANNEL 30V - 0.070 Ω - 5A SO-8 STRIPFET POWER MOSFET TYPE V DSS R DS(on) I D STS5PF30L 30V
More informationSTP3NB90 STP3NB90FP N-CHANNEL 900V - 4 Ω A TO-220/TO-220FP PowerMesh MOSFET
STP3NB90 STP3NB90FP N-CHANNEL 900V - 4 Ω - 3.5 A TO-220/TO-220FP PowerMesh MOSFET TYPE V DSS R DS(on) I D Pw STP3NB90 STP3NB90FP 900 V 900 V TYPICAL R DS (on) = 4 Ω
More informationIRF540 N-CHANNEL 100V Ω - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
N-CHANNEL 100V - 0.055 Ω - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D IRF540 100 V
More informationObsolete Product(s) - Obsolete Product(s)
N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY POWER MOSFET STY140NS10 100V
More informationObsolete Product(s) - Obsolete Product(s)
N-CHANNEL 30V - 0.016 Ω - 9A SO-8 LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STS9NF3LL 30 V
More informationSTF12PF06 P-CHANNEL 60V Ω - 12A TO-220/TO-220FP STripFET II POWER MOSFET
STP12PF06 STF12PF06 P-CHANNEL 60V - 0.18 Ω - 12A TO-220/TO-220FP STripFET II POWER MOSFET Table 1: General Features TYPE V DSS R DS(on) I D Figure 1:Package STP12PF06 STF12PF06 60 V 60 V TYPICAL R DS (on)
More information50 A 27 A ABSOLUTE MAXIMUM RATINGS. Symbol Parameter Value Unit
IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS IRFZ40 IRFZ40FI TYPE V DSS R DS(on) I D 50 V 50 V < 0.028 Ω < 0.028 Ω 50 A 27 A TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY
More information-55 to 175 C T j ( ) Pulse width limited by safe operating area.
N-CHANNEL 60V - 0.020 Ω - 28A IPAK/DPAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D 60 V
More informationSTP5NK80Z - STP5NK80ZFP N-CHANNEL 800V - 1.9Ω - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET
N-CHANNEL 800V - 1.9Ω - 4.3A TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP5NK80Z STP5NK80ZFP 800 V 800 V TYPICAL R DS (on) = 1.9 Ω
More informationSTP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET
STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP55NF03L STB55NF03L STB55NF03L-1 30 V 30 V 30 V
More informationObsolete Product(s) - Obsolete Product(s)
STP60NE06-16 STP60NE06-16FP N-CHANNEL 60V - 0.013 Ω - 60A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STP60NE06-16 60 V < 0.016
More informationSTS7PF30L P-CHANNEL 30V Ω - 7ASO-8 STripFET II POWER MOSFET
TYPE V DSS R DS(on) I D STS7PF30L P-CHANNEL 30V - 0.016Ω - 7ASO-8 STripFET II POWER MOSFET PRELIMINARY DATA STS7PF30L 30 V < 0.021 Ω 7A TYPICAL R DS (on) = 0.016Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE
More informationSTD10NF10 N-CHANNEL 100V Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET
N-CHANNEL 100V - 0.115 Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STD10NF10 100 V
More information3.4 A 2.1 A. Symbol Parameter Value Unit
BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR BUZ80 BUZ80FI TYPE VDSS R DS(on) ID 800 V 800 V < 4 Ω < 4 Ω 3.4 A 2.1 A TYPICAL R DS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE
More informationSTB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP
STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP N-CHANNEL 60V - 0.015 Ω - 50A TO-220/TO-220FP/I ² PAK/D²PAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP55NF06 STB55NF06-1 STB55NF06 STP55NF06FP 60 V
More informationSTD12NF06L N-CHANNEL 60V Ω - 12A IPAK/DPAK STripFET II POWER MOSFET
N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D 60 V < 0.1 Ω 12 A TYPICAL R DS (on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE LOW THRESHOLD DRIVE THROUGH-HOLE
More informationSTD17NF03L N-CHANNEL 30V Ω - 17A - DPAK/IPAK STripFET POWER MOSFET
N-CHANNEL 30V - 0.038Ω - 17A - DPAK/IPAK STripFET POWER MOSFET TYPE V DSS R DS(on) I D 30V
More informationSTW26NM60 N-CHANNEL 600V Ω - 30A TO-247 MDmesh MOSFET
N-CHANNEL 600V - 0.125Ω - 30A TO-247 MDmesh MOSFET Table 1: General Features Figure 1: Package TYPE V DSS R DS(on) I D STW26NM60 600 V < 0.135 Ω 30 A TYPICAL R DS (on) = 0.125 Ω HIGH dv/dt AND AVALANCHE
More informationIRFP460 N-CHANNEL 500V Ω A TO-247 PowerMesh II MOSFET
N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh II MOSFET TYPE V DSS R DS(on) I D IRFP460 500V < 0.27Ω 18.4A TYPICAL R DS (on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE
More informationSTE70NM60 N-CHANNEL 600V Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET
N-CHANNEL 600V - 0.050Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE V DSS R DS(on) I D STE70NM60 600V < 0.055Ω 70 A TYPICAL R DS (on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD
More informationSTD20NF06L N-CHANNEL 60V Ω - 24A DPAK/IPAK STripFET II POWER MOSFET
Table 1: General Features N-CHANNEL 60V - 0.032 Ω - 24A DPAK/IPAK STripFET II POWER MOSFET Figure 1:Package TYPE V DSS R DS(on) I D -1 60 V 60 V TYPICAL R DS (on) = 0.032 Ω < 0.040 Ω < 0.040 Ω EXCEPTIONAL
More informationSTP12NK30Z N-CHANNEL 300V Ω -9A-TO-220 Zener-Protected SuperMESH Power MOSFET
N-CHANNEL 300V - 0.36Ω -9A-TO-220 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D (1) Pw (1) STP12NK30Z 300 V < 0.4 Ω 9A 90W TYPICAL R DS (on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED
More information115 W 35 W 115 W 115 W 156 W SALES TYPE MARKING PACKAGE PACKAGING STP9NK70Z P9NK70Z TO-220 TUBE STP9NK70ZFP P9NK70ZFP TO-220FP TUBE
STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP9NK70Z STP9NK70ZFP
More informationSTP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET
STP10NK60Z/FP, STB10NK60Z/-1 STW10NK60Z N-CHANNEL 600V-0.65Ω-10A TO-220/FP/D 2 PAK/I 2 PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP10NK60Z STP10NK60ZFP STB10NK60Z STB10NK60Z-1
More informationSTP9NK50Z - STP9NK50ZFP STB9NK50Z - STB9NK50Z-1 N-CHANNEL 500V Ω - 7.2A TO-220/FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH MOSFET
STP9NK50Z - STP9NK50ZFP STB9NK50Z - STB9NK50Z-1 N-CHANNEL 500V - 0.72Ω - 7.2A TO-220/FP/D 2 PAK/I 2 PAK Zener-Protected SuperMESH MOSFET TYPE V DSS R DS(on) I D Pw STP9NK50Z STP9NK50ZFP STB9NK50Z STB9NK50Z-1
More informationSTP60NF06 STP60NF06FP
STP60NF06 STP60NF06FP N-CHANNEL 60V - 0.014Ω - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS(on) I D STP60NF06 STP60NF06FP 60 V 60 V < 0.016 Ω < 0.016 Ω 60A 60A TYPICAL R DS (on) = 0.014Ω EXCEPTIONAL
More informationSTD16NF06. N-Channel 60V Ω - 16A - DPAK STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-Channel 60V - 0.060Ω - 16A - DPAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STD16NF06 60V
More informationSTP10NK70ZFP STP10NK70Z
STP10NK70ZFP STP10NK70Z N-CHANNEL 700V - 0.75Ω - 8.6A - TO220-TO220FP Zener-Protected SuperMESH MOSFET General features Package Type V DSS R DS(on) I D Pw STP10NK70Z 700 V
More informationObsolete Product(s) - Obsolete Product(s)
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND
More informationSTP7NK80Z - STP7NK80ZFP STB7NK80Z - STB7NK80Z-1 N-CHANNEL800V-1.5Ω - 5.2A TO-220/TO-220FP/I 2 PAK/D 2 PAK Zener-Protected SuperMESH Power MOSFET
STP7NK80Z - STP7NK80ZFP STB7NK80Z - STB7NK80Z-1 N-CHANNEL800V-1.5Ω - 5.2A TO-220/TO-220FP/I 2 PAK/D 2 PAK Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STP7NK80Z STP7NK80ZFP STB7NK80Z
More informationSTY60NK30Z N-CHANNEL 300V Ω - 60A Max247 Zener-Protected SuperMESH Power MOSFET
N-CHANNEL 300V - 0.033Ω - 60A Max247 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STY60NK30Z 300 V < 0.045 Ω 60 A 450 W TYPICAL R DS (on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY
More informationObsolete Product(s) - Obsolete Product(s)
N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY TYPICAL R DS(on) = 0.062 Ω EXTREMELY
More informationSTS7PF30L P-CHANNEL 30V Ω - 7A - SO-8 STripFET II Power MOSFET General features Description Internal schematic diagram
P-CHANNEL 30V - 0.16Ω - 7A - SO-8 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STS7PF30L 30V
More informationSTY60NM50 N-CHANNEL 500V Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET
N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE V DSS R DS(on) I D STY60NM50 500V < 0.05Ω 60 A TYPICAL R DS (on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD
More informationSTD7NS20 STD7NS20-1 N-CHANNEL 200V Ω - 7A DPAK / IPAK MESH OVERLAY MOSFET
TYPE V DSS R DS(on) I D STD7NS20 STD7NS20-1 N-CHANNEL 200V - 0.35Ω - 7A DPAK / IPAK MESH OVERLAY MOSFET PRELIMINARY DATA STD7NS20 STD7NS20-1 200 V 200 V < 0.40 Ω < 0.40 Ω 7A 7A TYPICAL R DS (on) = 0.35
More informationSTW9NC80Z N-CHANNEL 800V Ω - 9.4A TO-247 Zener-Protected PowerMESH III MOSFET
N-CHANNEL 800V - 0.82Ω - 9.4A TO-247 Zener-Protected PowerMESH III MOSFET TYPE V DSS R DS(on) I D STW9NC80Z 800 V
More informationSTD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET
STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET TYPE V DSS R DS(on) I D STD5NM50 STD5NM50-1 500V 500V
More informationVNP35N07FI VNB35N07/VNV35N07
VNP35N07FI VNB35N07/VNV35N07 OMNIFET : FULLY UTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP35N07FI VNB35N07 VNV35N07 70 V 70 V 70 V 0.028 Ω 0.028 Ω 0.028 Ω 35 35 35 LINER CURRENT LIMITTION THERML
More informationSTW6NC90Z N-CHANNEL 900V - 2.1Ω - 5.2A TO-247 Zener-Protected PowerMESH III MOSFET
N-CHANNEL 900V - 2.1Ω - 5.2A TO-247 Zener-Protected PowerMESH III MOSFET TYPE V DSS R DS(on) I D STW6NC90Z 900 V < 2.5 Ω 5.2A TYPICAL R DS (on) = 2.1Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER
More informationObsolete Product(s) - Obsolete Product(s)
P-CHANNEL 20V - 0.065Ω - 5ASOT23-6L 2.5V-DRIVE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STT5PF20V 20 V < 0.080 Ω (@4.5V)
More informationSTW8NC90Z N-CHANNEL 900V Ω - 7.6A TO-247 Zener-Protected PowerMESH III MOSFET
N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE V DSS R DS(on) I D STW8NC90Z 900 V < 1.38 Ω 7.6 A TYPICAL R DS (on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY GATE- TO-SOURCE
More informationSTP80NF10 STB80NF10 N-CHANNEL 100V Ω - 80A - TO-220/D 2 PAK LOW GATE CHARGE STripFET II MOSFET
STP80NF10 STB80NF10 N-CHANNEL 100V - 0.012Ω - 80A - TO-220/D 2 PAK LOW GATE CHARGE STripFET II MOSFET Table 1: General Features Figure 1: Package TYPE V DSS R DS(on) I D STB80NF10 STP80NF10 100 V 100 V
More informationSTF40NF03L STP40NF03L
STF40NF03L STP40NF03L N-channel 30 V, 0.018 Ω, 40 A TO-220, TO-220FP STripFET Power MOSFET Features Type V DSS R DS(on) max I D STF40NF03L 30 V 0.022 Ω 23 A STP40NF03L 30 V 0.022 Ω 40 A Low threshold device
More informationSTB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP
General features STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-channel 500V - 0.20Ω - 20A - TO220/FP-D 2 PAK-I 2 PAK MDmesh Power MOSFET Type V DSS (@T Jmax ) R DS(on) STB20NM50 550V < 0.25Ω 20A STB20NM50-1
More informationSTP36NF06 STP36NF06FP
STP36NF06 STP36NF06FP N-channel 60V - 0.032Ω - 30A - TO-220/TO-220FP STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP36NF06 60V
More informationSTB16NF06L. N-channel 60V Ω - 16A - D 2 PAK STripFET Power MOSFET. General features. Description. Internal schematic diagram.
N-channel 60V - 0.07Ω - 16A - D 2 PAK STripFET Power MOSFET General features Type V DSS R DS(on) I D STB16NF06L 60V
More informationSTP80NF10FP. N-channel 100V Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET. General features. Description
N-channel 100V - 0.012Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D (1) STP80NF10FP 100V
More informationObsolete Product(s) - Obsolete Product(s)
2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type V DSS R DS(on) max I D 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A Low Q g Low threshold
More informationSTD30NF03L STD30NF03L-1
STD30NF03L STD30NF03L-1 N-channel 30V - 0.020Ω - 30A - DPAK/IPAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STD30NF03L-1 30V < 0.025Ω 30A STD30NF03L 30V < 0.025Ω 30A Low threshold
More informationObsolete Product(s) - Obsolete Product(s)
STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh Power MOSFET TYPE V DSS R DS(on) I D STD2NM60 STD2NM60-1 600V 600V TYPICAL R DS (on) = 2.8 Ω < 3.2 Ω < 3.2 Ω HIGH dv/dt AND
More informationVNP28N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP28N04 42 V 0.035 Ω 28 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM
More informationSTB30NF10 STP30NF10 - STP30NF10FP
STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038Ω - 35A - D 2 PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D STB30NF10 100V
More informationSTN2NF10. N-channel 100V Ω - 2.4A - SOT-223 STripFET II Power MOSFET. Features. Description. Application. Internal schematic diagram.
N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET II Power MOSFET Features Type V DSS R DS(on) I D STN2NF10 100V < 0.26Ω 2.4A 2 Description This Power MOSFET is the latest development of STMicroelectronics
More informationSTP21NM50N-STF21NM50N-STW21NM50N STB21NM50N - STB21NM50N-1
STP21NM50N-STF21NM50N-STW21NM50N STB21NM50N - STB21NM50N-1 N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D 2 /I 2 PAK/TO-247 SECOND GENERATION MDmesh MOSFET Table 1: General Features Figure 1: Package TYPE V
More informationSTB80NF55-08T4 STP80NF55-08, STW80NF55-08
STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D 2 PAK, TO-247 STripFET Power MOSFET Features Type V DSS R DS(on) max STB80NF55-08T4 55 V < 0.008 Ω 80 A STP80NF55-08
More informationN-channel 75 V, Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package. Order codes Marking Package Packaging
Features N-channel 75 V, 0.0092 Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package Datasheet production data Type V DSS R DS(on) max I D TAB STP75N75F4 75 V < 0.011 Ω 78 A N-channel enhancement
More information115 W 115 W 35 W 115 W 35 W 156 W TO-220 SALES TYPE MARKING PACKAGE PACKAGING STP10NK60Z P10NK60Z TO-220 TUBE STP10NK60ZFP P10NK60ZFP TO-220FP TUBE
STP10NK60Z/FP, STB10NK60Z/-1 STH10NK60ZFI, STW10NK60Z N-CHANNEL600V-0.65Ω-10ATO-220/FP/D 2 PAK/I 2 PAK/TO-247/ISOWATT218 Zener-Protected SuperMESH Power MOSFET TYPE V DSS R DS(on) I D Pw STB10NK60Z STB10NK60Z-1
More information2N7000 2N7002. N-channel 60V - 1.8Ω A - SOT23-3L / TO-92 STripFET Power MOSFET. General features. Description. Internal schematic diagram
2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET General features Type V DSS R DS(on) I D 2N7000 60V
More informationSTF8NK100Z STP8NK100Z
STF8NK100Z STP8NK100Z N-CHANNEL 1000V - 1.60Ω - 6.5A - TO-220 - TO-220FP Zener-Protected SuperMESH MOSFET General features Type V DSS R DS(on) I D Pw STF8NK100Z 1000 V
More informationObsolete Product(s) - Obsolete Product(s)
STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features Type 100% avalanche tested Low input capacitance
More informationSTS4DNF60L. N-channel 60 V, Ω, 4 A, SO-8 STripFET Power MOSFET. Features. Application. Description
Nchannel 60 V, 0.045 Ω, 4 A, SO8 STripFET Power MOSFET Features Type V DSS R DS(on) I D STS4DNF60L 60V
More informationSTP14NF10. N-channel 100 V Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET. Features. Application. Description
N-channel 100 V - 0.115 Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP14NF10 100 V < 0.13 Ω 15 A Exceptional dv/dt capability 100% avalanche tested
More informationSTP12NK60Z STF12NK60Z
STP12NK60Z STF12NK60Z N-channel 650 V @Tjmax- 0.53 Ω - 10 A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET Features Type V DSS (@Tjmax) R DS(on) max I D P W STP12NK60Z 650 V
More informationSTD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET
STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET Table 1: General Features TYPE V DSS R DS(on) I D Pw STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60
More informationSTB160N75F3 STP160N75F3 - STW160N75F3
General features STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D 2 PAK MDmesh low voltage Power MOSFET TARGET SPECIFICATION Type V DSS R DS(on) I D STB160N75F3
More informationSTV300NH02L. N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET. Features. Applications. Description
N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET Features Type V DSS R DS(on) I D STV300NH02L 24V 0.001Ω 280A R DS(on) *Q g industry s benchmark Conduction losses reduced Low profile, very
More informationOrder code V DS R DS(on) max. I D
Datasheet N-channel 6 V, 165 mω typ., 18 A, MDmesh DM6 Power MOSFET in a TO 22FP package Features Order code V DS R DS(on) max. I D STF26N6DM6 6 V 195 mω 18 A TO-22FP D(2) 1 2 3 Fast-recovery body diode
More informationSTP4NK60Z, STP4NK60ZFP
STP4NK60Z, STP4NK60ZFP N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH Power MOSFETs in TO-220 and TO-220FP packages Features Datasheet - production data Order codes V DS R DS(on) max. P TOT
More informationSTP40NF12. N-channel 120V Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET. General features. Description. Internal schematic diagram
N-channel 120V - 0.028Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP40NF12 120V
More informationSTD25NF10LA. N-channel 100 V, Ω, 25 A DPAK STripFET II Power MOSFET. Features. Applications. Description
N-channel 100 V, 0.030 Ω, 25 A DPAK STripFET II Power MOSFET Features Order code V DSS R DS(on) max I D STD25NF10LA 100 V < 0.035 Ω 25 A Exceptional dv/dt capability 100% avalanche tested Logic level device
More informationVNP35N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET
"OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP35N07 70 V 0.028 Ω 35 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM
More informationN-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-220FP package. Features. Description. AM15572v1
STF1N6M2 N-channel 6 V,.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-22FP package Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STF1N6M2 65 V.6 Ω 7.5 A TO-22FP
More informationSTP36NF06L STB36NF06L
STP36NF06L STB36NF06L N-channel 60V - 0.032Ω - 30A - TO-220 - D 2 PAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP36NF06L 60V < 0.04Ω 30A STB36NF06L 60V < 0.04Ω 30A Exceptional
More informationFeatures. Application. Description. Table 1. Device summary. Order code Marking Package Packaging. STP80NF12 P80NF12 TO-220 Tube
N-channel 120 V, 0.013 Ω typ., 80 A, STripFET II Power MOSFET in a TO-220 package Features Datasheet - production data TAB Type V DSS R DS(on) max STP80NF12 120 V < 0.018 Ω 80 A I D TO-220 1 2 3 Exceptional
More informationSTF20NK50Z, STP20NK50Z
Features N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected in TO-220FP and TO-220 packages Datasheet production data Order codes V DSS R DS(on) max I D P TOT TAB STF20NK50Z STP20NK50Z
More informationI D. Order codes Marking Package Packaging. STP80NF10 TO-220 Tube STB80NF10T4 D²PAK Tape and reel
STB80NF10 STP80NF10 N-channel 100 V, 0.012 Ω, 80 A, TO-220, D 2 PAK low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP80NF10 100 V < 0.015 Ω 80 A STB80NF10 100 V < 0.015
More informationSTB270N4F3 STI270N4F3
STB270N4F3 STI270N4F3 N-channel 40 V, 1.6 mω, 160 A, D 2 PAK, I 2 PAK STripFET III Power MOSFET Features Type V DSS R DS(on) max I D P TOT STB270N4F3 40 V < 2.0 mω 160 A 330 W STI270N4F3 40 V < 2.6 mω
More informationObsolete Product(s) - Obsolete Product(s)
Nchannel 100 V, 0.0045 Ω, 220 A, ISOTOP STripFET Power MOSFET Features Type V DSS R DS(on) I D STE250NS10 100 V
More informationSTB160N75F3 STP160N75F3 - STW160N75F3
STB160N75F3 STP160N75F3 - STW160N75F3 N-channel 75V - 3.5mΩ - 120A - TO-220 - TO-247 - D 2 PAK STripFET Power MOSFET Features Type V DSS R DS(on) (max.) I D STB160N75F3 75V 3.7 mω 120 A (1) STP160N75F3
More informationSTD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET
STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET Table 1: General Features TYPE V DSS R DS(on) I D Pw STQ1NK60ZR STD1LNK60Z-1 STN1NK60Z 600
More informationSTP80NF12. N-channel 120 V, Ω, 80 A, TO-220 STripFET II Power MOSFET. Features. Application. Description
N-channel 120 V, 0.013 Ω, 80 A, TO-220 STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP80NF12 120 V < 0.018 Ω 80 A Exceptional dv/dt capability 100% avalanche tested Application oriented
More information