VNP35N07FI VNB35N07/VNV35N07

Transcription

1 VNP35N07FI VNB35N07/VNV35N07 OMNIFET : FULLY UTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) Ilim VNP35N07FI VNB35N07 VNV35N07 70 V 70 V 70 V Ω Ω Ω LINER CURRENT LIMITTION THERML SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRTED CLMP LOW CURRENT DRWN FROM INPUT PIN DIGNOSTIC FEEDBCK THROUGH INPUT PIN ESD PROTECTION DIRECT CCESS TO THE GTE OF THE POWER MOSFET (NLOG DRIVING) COMPTIBLE WITH STNDRD POWER MOSFET DESCRIPTION The VNP35N07FI, VNB35N07 and VNV35N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh ISOWTT D2PK TO enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. 10 PowerSO-10 1 BLOCK DIGRM ( ) ( ) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRIN = TB June /13

2 BSOLUTE MXIMUM RTING Symbol Parameter Value Unit PowerSO-10 ISOWTT220 D2PK VDS Drain-source Voltage (Vin = 0) Internally Clamped V Vin Input Voltage 18 V I D Drain Current Internally Limited I R Reverse DC Output Current -50 Vesd Electrostatic Discharge (C= 100 pf, R=1.5 KΩ) 2000 V Ptot Total Dissipation at Tc =25 o C W T j Operating Junction Temperature Internally Limited o C Tc Case Operating Temperature Internally Limited o C Tst g Storage Temperature -55 to 150 o C THERML DT ISOWTT220 PowerSO-10 D2PK R thj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max o C/W o C/W ELECTRICL CHRCTERISTICS (T case =25 o C unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit VCLMP V CLTH VINCL IDSS I ISS Drain-source Clamp Voltage Drain-source Clamp Threshold Voltage Input-Source Reverse Clamp Voltage Zero Input Voltage Drain Current (Vin =0) Supply Current from Input Pin ID = 200 m Vin = V I D =2m V in =0 55 V Iin =-1m V VDS =13V Vin =0 VDS =25V Vin = V DS =0V V in = 10 V µ µ µ ON ( ) Symbol Parameter Test Conditions Min. Typ. Max. Unit V IN(th) Input Threshold Voltage V DS =V in I D +Ii n =1m V R DS(on) Static Drain-source On Resistance V in =10V I D =18 V in =5V I D = Ω Ω DYNMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit Forward Transconductance VDS =13V ID= S C oss Output Capacitance V DS =13V f=1mhz V in = pf gfs ( ) 2/13

3 ELECTRICL CHRCTERISTICS (continued) SWITCHING ( ) Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(on) tr t d(off) tf td(on) t r td(off) t f Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD =28V I d =18 Vgen =10V Rgen =10Ω (see figure 3) VDD =28V V gen =10V (see figure 3) Id=18 R gen = 1000 Ω (di/dt)on Turn-on Current Slope VDD =28V ID=18 60 /µs V in =10V R gen =10Ω Qi Total Input Charge VDD = 12V ID= 18 Vin = 10 V 100 nc ns ns ns ns ns µs µs µs SOURCE DRIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit VSD ( ) Forward On Voltage ISD =18 Vin =0 1.6 V trr( ) Reverse Recovery ISD = 18 di/dt = 100 /µs 250 ns Time V DD =30V T j =25 o C Qrr( ) IRRM( ) Reverse Recovery Charge Reverse Recovery Current (see test circuit, figure 5) 1 8 µc PROTECTION Symbol Parameter Test Conditions Min. Typ. Max. Unit Ilim Drain Current Limit Vin =10V VDS =13V V in =5V V DS =13V t dlim ( ) Step Response Current Limit V in =10V Vin =5V T jsh ( ) Overtemperature Shutdown 150 T jrs ( ) Overtemperature Reset 135 I gf ( ) Fault Sink Current V in =10V V DS =13V Vin =5V VDS =13V E as ( ) Single Pulse starting T j =25 o C V DD =20V valanche Energy Vin =10V Rgen =1KΩ L=10mH ( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ) Parameters guaranteed by design/characterization µs µs o C o C m m 2.5 J 3/13

4 PROTECTION FETURES During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user s standpoint is that a small DC current (I iss ) flows into the Input pin in order to supply the internal circuitry. The device integrates: - OVERVOLTGE CLMP PROTECTION: internally set at 70V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINER CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T jsh. - OVERTEMPERTURE ND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs at minimum 150 o C. The device is automatically restarted when the chip temperature falls below 135 o C. - STTUS FEEDBCK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin. The internal protection circuit disconnects the input from the gate and connects it instead to ground via an equivalent resistance of 100 Ω. The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential. dditional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in R DS(on) ). 4/13

5 Thermal Impedance For ISOWTT220 Thermal Impedance For D2PK / PowerSO-10 Derating Curve Output Characteristics Transconductance Static Drain-Source On Resistance vs Input Voltage 5/13

6 Static Drain-Source On Resistance Static Drain-Source On Resistance Input Charge vs Input Voltage Capacitance Variations Normalized Input Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 6/13

7 Normalized On Resistance vs Temperature Turn-on Current Slope Turn-on Current Slope Turn-off Drain-Source Voltage Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load 7/13

8 Switching Time Resistive Load Switching Time Resistive Load Current Limit vs Junction Temperature Step Response Current Limit Source Drain Diode Forward Characteristics 8/13

9 Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Input Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching nd Diode Recovery Times Fig. 6: Waveforms 9/13

10 ISOWTT220 MECHNICL DT DIM. mm inch MIN. TYP. MX. MIN. TYP. MX B D E F F F G G H L L L L L Ø H G B D E L6 L7 L3 F1 F F2 G L2 L4 P011G 10/13

11 TO-263 (D2PK) MECHNICL DT DIM. mm inch MIN. TYP. MX. MIN. TYP. MX B B C C D E G L L L E C2 L2 L D L3 B2 1 B C G P011P6/C 11/13

12 PowerSO-10 MECHNICL DT DIM. mm inch MIN. TYP. MX. MIN. TYP. MX B c D D E E E E E e F H h L q α 0 o 8 o B 0.10 B 10 6 H E E2 E3 E1 E4 1 5 SETING PLNE e B DETIL 0.25 M D Q C h = D1= SETING PLNE F 1 1 DETIL L α C 12/13

13 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademarkof STMicroelectronics 1998 STMicroelectronics Printed in Italy ll Rights Reserved STMicroelectronics GROUP OF COMPNIES ustralia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom- U.S... 13/13