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1 VNSNV4D OMNIFET II : FULLY AUTOPROTECTED POWER MOSFET TYPE R DS(on) I lim V clamp VNSNV4D 5 mω (*).7 A (*) 4 V (*) (*) Per each device n LINEAR CURRENT LIMITATION n THERMAL SHUT DOWN n SHORT CIRCUIT PROTECTION n INTEGRATED CLAMP n LOW CURRENT DRAWN FROM INPUT PIN n DIAGNOSTIC FEEDBACK THROUGH INPUT PIN n ESD PROTECTION n DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) n COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNSNV4D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M-3 BLOCK DIAGRAM OVERVOLTAGE CLAMP DRAIN SO-8 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 5KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. INPUT GATE CONTROL DRAIN OVERVOLTAGE CLAMP GATE CONTROL INPUT OVER TEMPERATURE LINEAR CURRENT LIMITER LINEAR CURRENT LIMITER OVER TEMPERATURE SOURCE SOURCE September 3 DocID7395 Rev 4 /4

2 VNSNV4D ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit V DSn Drain-source Voltage (V INn =V) Internally Clamped V V INn Input Voltage Internally Clamped V I INn Input Current +/- ma R IN MINn Minimum Input Series Impedance 33 Ω I Dn Drain Current Internally Limited A I Rn Reverse DC Output Current -3 A V ESD Electrostatic Discharge (R=.5KΩ, C=pF) 4 V V ESD Electrostatic Discharge on output pins only (R=33Ω, C=5pF) 65 V P tot Total Dissipation at T c =5 C 4 W T j Operating Junction Temperature Internally limited C T c Case Operating Temperature Internally limited C T stg Storage Temperature -55 to 5 C CONNECTION DIAGRAM (TOP VIEW) I IN R IN SOURCE INPUT SOURCE INPUT CURRENT AND VOLTAGE CONVENTIONS INPUT I V IN R IN IN INPUT 4 5 DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN 8 I D I D V DS V IN SOURCE SOURCE V DS /4

3 VNSNV4D THERMAL DATA (*) When mounted on a standard single-sided FR4 board with 5mm of Cu (at least 35 µm thick) connected to all DRAIN pins of the relative channel. ON Symbol Parameter Value Unit R thj-lead Thermal Resistance Junction-lead (per channel) MAX 3 C/W R thj-amb Thermal Resistance Junction-ambient MAX 8(*) C/W ELECTRICAL CHARACTERISTICS (-4 C < T j < 5 C, unless otherwise specified) (Per each device) OFF Symbol Parameter Test Conditions Min Typ Max Unit V CLAMP Drain-source Clamp Voltage V IN =V; I D =.5A V V CLTH Drain-source Clamp Threshold Voltage V IN =V; I D =ma 36 V V INTH Input Threshold Voltage V DS =V IN ; I D =ma.5.5 V I ISS Supply Current from Input Pin V DS =V; V IN =5V 5 µa V INCL Input-Source Clamp I IN =ma V Voltage I IN =-ma V I DSS Zero Input Voltage Drain V DS =3V; V IN =V; T j =5 C 3 µa Current (V IN =V) V DS =5V; V IN =V 75 µa Symbol Parameter Test Conditions Min Typ Max Unit Static Drain-source On V IN =5V; I D =.5A; T j = 5 C 5 mω R DS(on) Resistance V IN =5V; I D =.5A 5 mω 3/4

4 VNSNV4D ELECTRICAL CHARACTERISTICS (continued) (T j =5 C, unless otherwise specified) DYNAMIC Symbol Parameter Test Conditions Min Typ Max Unit g fs (*) Forward Transconductance V DD =3V; I D =.5A S C OSS Output Capacitance V DS =3V; f=mhz; V IN =V 9 pf SWITCHING Symbol Parameter Test Conditions Min Typ Max Unit t d(on) Turn-on Delay Time 7 ns V DD =5V; I D =.5A t r Rise Time 7 5 ns V gen =5V; R gen =R IN MINn =33Ω t d(off) Turn-off Delay Time 35 ns (see figure ) t f Fall Time 6 ns t d(on) Turn-on Delay Time.5. µs V DD =5V; I D =.5A t r Rise Time.3 4. µs V gen =5V; R gen =.KΩ t d(off) Turn-off Delay Time µs (see figure ) t f Fall Time. 4. µs (di/dt) on Turn-on Current Slope V DD =5V; I D =.5A V gen =5V; R gen =R IN MINn =33Ω 5. A/µs Q i Total Input Charge V DD =V; I D =.5A; V IN =5V I gen =.3mA (see figure 5) 5. nc SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min Typ Max Unit V SD (*) Forward On Voltage I SD =.5A; V IN =V.8 V t rr Reverse Recovery Time I SD =.5A; di/dt=6a/µs 5 ns Q rr Reverse Recovery Charge V DD =3V; L=µH µc I RRM Reverse Recovery Current (see test circuit, figure ).75 A PROTECTIONS (-4 C < T j < 5 C, unless otherwise specified) Symbol Parameter Test Conditions Min Typ Max Unit I lim Drain Current Limit V IN =5V; V DS =3V A t dlim Step Response Current Limit V IN =5V; V DS =3V. µs T jsh Overtemperature Shutdown 5 75 C T jrs Overtemperature Reset 35 C I gf Fault Sink Current V IN =5V; V DS =3V; T j =T jsh 5 ma E as starting T j =5 C; V DD =4V Single Pulse V IN =5V R gen =R IN MINn =33Ω; L=5mH Avalanche Energy (see figures 3 & 4) 55 mj (*) Pulsed: Pulse duration = 3µs, duty cycle.5% 4/4

5 VNSNV4D PROTECTION FEATURES During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 5KHz. The only difference from the user s standpoint is that a small DC current I ISS (typ. µa) flows into the INPUT pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current I D to I lim whatever the INPUT pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T jsh. - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 5 to 9 C, a typical value being 7 C. The device is automatically restarted when the chip temperature falls of about 5 C below shut-down temperature. - STATUS FEEDBACK: in the case of an overtemperature fault condition (T j > T jsh ), the device tries to sink a diagnostic current I gf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current I gf, the INPUT pin will fall to V. This will not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current I ISS. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit. 5/4

6 VNSNV4D Figure : Switching Time Test Circuit for Resistive Load V D R gen V gen I D Figure : Test Circuit for Diode Recovery Times I t r D OMNIFET S 9% % V gen t d(on) td(off) A A FAST L=uH DIODE B B t f t t 33Ω R gen I OMNIFET D V DD V gen S 8.5 Ω 6/4

7 VNSNV4D Figure 3: Unclamped Inductive Load Test Circuits Figure 4: Unclamped Inductive Waveforms V IN P W VIN R GEN Figure 5: Input Charge Test Circuit GEN ND83 7/4

8 VNSNV4D Source-Drain Diode Forward Characteristics Vsd (mv) Static Drain Source On Resistance Rds(on) (ohms) Vin=V Vin=.5V Tj=-4ºC Derating Curve Static Drain-Source On resistance Vs. Input Voltage Rds(on) (mohms) Tj=5ºC Tj=5ºC Id (A) Id=.5A Id=A Static Drain-Source On resistance Vs. Input Voltage Rds(on) (mohms) Transconductance Gfs (S) Vds=3V Id(A) Vin(V) Id=.5A Tj=5ºC Tj=5ºC Tj=-4ºC Tj=5ºC Tj=5ºC Tj=-4ºC Tj=5ºC Tj=5ºC 5 5 8/4 Tj=-4ºC Vin(V) Id=.5A Id=A Id=.5A Id=A Id(A)

9 VNSNV4D Static Drain-Source On Resistance Vs. Id Transfer Characteristics Rds(on) (mohms) 5 Idon(A) Tj=5ºC Vin=3.5V.75 Vds=3.5V Tj=5ºC Turn On Current Slope di/dt(a/us) Rg(ohm) Input Voltage Vs. Input Charge Vin (V) Vds=V Id=.5A Tj=5ºC Tj=-4ºC Id(A) Vdd=5V Id=.5A Vin=3.5V Vin=3.5V Turn On Current Slope di/dt(a/us) Vin=3.5V Vdd=5V Id=.5A Rg(ohm) Turn off drain source voltage slope dv/dt(v/us) Tj=5ºC Tj=-4ºC Vin(V) Vdd=5V Id=.5A Qg (nc) Rg(ohm) 9/4

10 VNSNV4D Turn Off Drain-Source Voltage Slope dv/dt(v/us) 35 Capacitance Variations C(pF) Vin=3.5V Vdd=5V Id=.5A 75 f=mhz Vin=V Switching Time Resistive Load t(us) Output Characteristics ID(A) Vdd=5V Id=.5A Rg(ohm) Rg(ohm) td(off) Vin=5.5V Vin=4.5V Vin=3.5V.4 Vin=3V VDS(V) tr tf td(on) Vds(V) Switching Time Resistive Load t(ns) tr td(on) Vin(V) Vdd=5V Id=.5A Rg=33ohm Normalized On Resistance Vs. Temperature Rds(on) (mohm) Id=.5A td(off) Tc (ºC) tf /4

11 VNSNV4D Normalized Input Threshold Voltage Vs. Temperature Vinth (V) Normalized Current Limit Vs. Junction Temperature Ilim (A) Vds=Vin Id=mA Vds=3V Tc (ºC) Step Response Current Limit Tdlim(us) Vdd(V) Rg=33ohm Tc (ºC) /4

12 VNSNV4D SO-8 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A a a a b b C c 45 (typ.) D E e.7.5 e F L M.6.3 F 8 (max.) /4

13 SO-8 TUBE SHIPMENT (no suffix) VNSNV4D TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 48 rev. A, Feb 986 Tape width W Tape Hole Spacing P (±.) 4 Component Spacing P 8 Hole Diameter D (±./-).5 Hole Diameter D (min).5 Hole Position F (±.5) 5.5 Compartment Depth K (max) 4.5 Hole Spacing P (±.) B C A Base Q.ty Bulk Q.ty Tube length (±.5) 53 A 3. B 6 C (±.).6 All dimensions are in mm. TAPE AND REEL SHIPMENT (suffix 3TR ) REEL DIMENSIONS Base Q.ty 5 Bulk Q.ty 5 A (max) 33 B (min).5 C (±.) 3 F. G (+ / -).4 N (min) 6 T (max) 8.4 All dimensions are in mm. All dimensions are in mm. End Start Top cover tape No components 5mm min Components Empty components pockets saled with cover tape. No components 5mm min User direction of feed 3/4

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