VNH50N04 OMNIFET : FULLY AUTOPROTECTED POWER MOSFET
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1 OMNIFET : FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp RDS(on) I lim VNH50N04 40 V Ω 50 A TARGET DATA LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET STANDARD TO-218 PACKAGE DESCRIPTION The VNH50N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applicatio. Buit-in thermal shut-down, linear TO-218 current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin. BLOCK DIAGRAM September /7
2 ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit VDS Drain-source Voltage (Vin = 0) Internally Clamped V Vin Input Voltage 18 V I D Drain Current Internally Limited A I R Reverse DC Output Current -50 A Vesd Electrostatic Discharge (C= 100 pf, R=1.5 KΩ) 2000 V P tot Total Dissipation at T c = W T j Operating Junction Temperature Internally Limited Tc Case Operating Temperature Internally Limited T stg Storage Temperature -55 to 150 THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max /W /W ELECTRICAL CHARACTERISTICS (T case =25 unless otherwise specified) OFF Symbol Parameter Test Conditio Min. Typ. Max. Unit V CLAMP V CLTH VINCL I DSS I ISS Drain-source Clamp Voltage Drain-source Clamp Threshold Voltage Input-Source Reverse Clamp Voltage Zero Input Voltage Drain Current (Vin =0) Supply Current from Input Pin I D =18A V in = V I D =2mA V in =0 30 V Iin =-1mA V V DS =13V VDS =25V V DS =0V V in = 8 V µa µa µa ON ( ) Symbol Parameter Test Conditio Min. Typ. Max. Unit VIS(th) R DS(on) Input Threshold Voltage Static Drain-source On Resistance VDS =Vin ID =1mA 1 3 V V in =10V I D =30A Vin =5V ID =30A Ω Ω DYNAMIC Symbol Parameter Test Conditio Min. Typ. Max. Unit Forward VDS =13V ID =30A 40 S Traconductance C oss Output Capacitance V DS =13V f=1mhz V in = pf gfs ( ) 2/7
3 ELECTRICAL CHARACTERISTICS (continued) SWITCHING Symbol Parameter Test Conditio Min. Typ. Max. Unit t d(on) t r t d(off) tf t d(on) t r td(off) tf t d(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time V DD =15V I d =30A V gen =10V R gen =10Ω (see figure 3) V DD =15V I d =30A V gen =10V R gen =10Ω T j =125 (see figure 3) V DD =15V I d =30A Vgen =10V Rgen =1000Ω (see figure 3) (di/dt)on Turn-on Current Slope VDD =15V ID =30A A/ Vin =10V Q g Total Gate Charge V DD =12V I D =30A V in =10V nc SOURCE DRAIN DIODE Symbol Parameter Test Conditio Min. Typ. Max. Unit V SD ( ) Forward On Voltage I SD =30A V in = V trr Reverse Recovery ISD = 30 A di/dt = 100 A/ Time VDD = V Tj = 150 Q rr I RRM Reverse Recovery Charge Reverse Recovery Current (see test circuit, figure 5) µc A PROTECTION Symbol Parameter Test Conditio Min. Typ. Max. Unit I lim Drain Current Limit V in =10V V DS = 13 V A tdlim Step Respoe Vin =10V VDS = 13V Current Limit T jsh Overtemperature Shutdown Tjrs Overtemperature Reset 135 I gf Fault Sink Current V in =10V V DS =13V 50 ma E as Single Pulse starting T j =25 V DD =20V 5 J Avalanche Energy V in =10V R gen =1KΩ L=1.6mH ( ) Pulsed: Pulse duration = 300, duty cycle 1.5 % 3/7
4 PROTECTION FEATURES During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user s standpoint is that a small DC current (I iss ) flows into the Input pin in order to supply the internal circuitry. The device integrates: OVERVOLTAGE CLAMP PROTECTION: internally set at 42V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. LINEAR CURRENT LIMITER CIRCUIT: limits the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T jsh. OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on seing the chip temperature and are not dependent on the input voltage. The location of the seing element on the chip in the power stage area eures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 150 to 190, a typical value being 170. The device is automatically restarted when the chip temperature falls below 135. STATUS FEEDBACK: In the case of an overtemperature fault condition, a Status Feedback is provided through the Input pin. The internal protection circuit disconnects the input from the gate and connects it itead to ground via an equivalent resistance of 200 Ω. The failure can be detected by monitoring the voltage at the Input pin, which will be close to ground potential. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit (with a small increase in RDS(on)). 4/7
5 Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Input Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 6: Waveforms 5/7
6 TO-218 (SOT-93) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A C D E F G H L L L L R Ø F H G C D A E L5 L6 L3 L2 Ø R P025A 6/7
7 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no respoability for the coequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No licee is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificatiomentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorizedfor use as critical components in life supportdevices or systems without express written approval of SGS-THOMSON Microelectonics SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 7/7
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