VND10BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY

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1 ISO IG SIDE SMART POWER SOID STATE REAY TYPE VDSS RDS(on) IOUT VCC VND10BSP 40 V 0.1 Ω 3.4 A 26 V OUTPUT CURRENT (CONTINUOUS): T c =85 PER CANNE 5V OGIC EVE COMPATIBE INPUT TERMA SUT-DOWN UNDER VOTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT INDUCTIVE OAD FAST DEMAGNETIZATION VERY OW STAND-BY POWER DISSIPATION DESCRIPTION The VND10BSP is a monolithic device made using SGS-TOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded. This device has two channels, and a common diagnostic. Built-in thermal shut-down protects the chip from over temperature and short circuit. The status output provides an indication of open load in on state, open load in off state, overtemperatureconditions and stuck-on to V CC. BOCK DIAGRAM 10 1 PowerSO-10 March /9

2 ABSOUTE MAIMUM RATING Symbol Parameter Value Unit V(BR)DSS Drain-Source Breakdown Voltage 40 V I OUT Output Current (cont.) at T c =85 14 A I OUT (RMS) RMS Output Current at T c =85 and f > 1z 14 A IR Reverse Output Current at Tc =85-14 A IIN Input Current ±10 ma -V CC Reverse Supply Voltage -4 V I STAT Status Current ±10 ma VESD Electrostatic Discharge (1.5 kω, 100 pf) 2000 V Ptot Power Dissipation at Tc =25 75 W T j Junction Operating Temperature -40 to 150 T stg Storage Temperature -55 to 150 CONNECTION DIAGRAMS CURRENT AND VOTAGE CONVENTIONS 2/9

3 TERMA DATA R thj-case Thermal Resistance Junction-case Max R t hj- amb Thermal Resistance Junction-ambient ($) Max ($) When mounted using minimum recommended pad size on FR-4 board /W /W EECTRICA CARACTERISTICS (8 < V CC < 16 V; -40 T j 125 unless otherwise specified) POWER Symbol Parameter Test Conditions Min. Typ. Max. Unit V CC Supply Voltage V In(*) Nominal Current Tc =85 VDS(on) 0.5 VCC =13V A Ron On State Resistance IOUT =In VCC =13V Tj= Ω I S Supply Current Off State T j =25 V CC = 13 V µa V DS(MA) Maximum Voltage Drop I OUT =7.5A T j =85 V CC =13V V Ri Output to GND internal Impedance Tj = KΩ SWITCING Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(on) (^) Turn-on Delay Time Of R out =2.7Ω µs Output Current tr(^) Rise Time Of Output Rout =2.7Ω µs Current td(off)(^) Turn-off Delay Time Of Rout =2.7Ω µs Output Current t f (^) Fall Time Of Output R out =2.7Ω µs Current (di/dt)on Turn-on Current Slope Rout =2.7Ω A/µs (di/dt) off Turn-off Current Slope R out =2.7Ω A/µs OGIC INPUT Symbol Parameter Test Conditions Min. Typ. Max. Unit V I Input ow evel 1.5 V Voltage VI Input igh evel 3.5 ( ) V Voltage VI(hyst.) Input ysteresis Voltage V IIN Input Current VIN =5V Tj= µa VIC Input Clamp Voltage IIN = 10 ma IIN =-10mA V V 3/9

4 EECTRICA CARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit V STAT Status Voltage Output I STAT =1.6mA 0.4 V ow V USD Under Voltage Shut Down V VSC Status Clamp Voltage ISTAT = 10 ma I STAT =-10mA T TSD Thermal Shut-down Temperature Thermal Shut-down ysteresis T SD(hyst.) V V TR Reset Temperature 125 V O Open Voltage evel Off-State (note 2) V IO Open oad Current On-State A evel t povl Status Delay (note 3) 5 10 µs tpol Status Delay (note 3) µs (*) In= Nominal current according to ISO definition for high side automotive switch (see note 1) NOTE = (^) See switching time waveform NOTE = ( ) The V I is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not exceed 10 ma at the input pin. NOTE = note 1: The Nominal Current is the current at T c =85 for battery voltage of 13V which produces a voltage drop of 0.5 V NOTE = note 2: IO(off) =(VCC -VO)/RO note 3:t povl t pol: ISO definition. 50 Note 2 Relevant Figure Note 3 Relevant Figure 4/9

5 Switching Time Waveforms FUNCTIONA DESCRIPTION The device has a diagnostic output which indicates open load in on-state, open load in off-state, over temperature conditions and stuck-on to V CC. From the falling edge of the input signal, the status output, initially low to signal a fault condition (overtemperature or open load on-state), will go back to a high state with a different delay in case of overtemperature (tpovl) and in case of open open load (tpol) respectively. This feature allows to discriminate the nature of the detected fault. To protect the device against short circuit and over current condition, the thermal protection turns the integrated Power MOS off at a minimum junction temperature of 140. When this temperature returns to 125 the switch is automatically turned on again. In short circuit the protection reacts with virtually no delay, the sensor being located inside the Power MOS area. An internal function of the devices ensures the fast demagnetization of inductive loads with a typical voltage (Vdemag) of -18V. This function allows to greatly reduces the power dissipation according to the formula: P dem = 0.5 load (Ι load ) 2 [(V CC +V demag )/V demag ] f where f = switching frequency and V demag = demagnetization voltage. The maximum inductance which causes the chip temperature to reach the shut-down temperature in a specified thermal environment is a function of the load current for a fixed VCC, Vdemag and f according to the above formula. In this device if the GND pin is disconnected, with V CC not exceeding 16V, it will switch off. PROTECTING TE DEVICE AGAINST REVERSE BATTERY The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical application circuit (fig.3). The consequences of the voltage drop across this diode are as follows: If the input is pulled to power GND, a negative voltage of -V f is seen by the device. (Vil, Vih thresholds and Vstat are increased by Vf with respect to power GND). The undervoltage shutdown level is increa- sed by Vf. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to node [1] (see application circuit in fig. 3), which becomes the common signal GND for the whole control board avoiding shift of V ih, V il and V stat. This solution allows the use of a standard diode. 5/9

6 TRUT TABE Normal Operation INPUT 1 INPUT 2 OUTPUT 1 OUTPUT 2 DIAGNOSTIC Under-voltage Thermal Shutdown Channel 1 Channel 2 Open oad Channel 1 Channel 2 Output Shorted to VCC Channel 1 Channel 2 (**) with additional external resistor. Figure 1: Waveforms (**) (**) 6/9

7 Figure 2: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 3: Typical Application Circuit With Separate Signal Ground 7/9

8 Power SO-10 MECANICA DATA DIM. mm inch MIN. TYP. MA. MIN. TYP. MA. A A B c D D E E E E E e F h q α 0 o 8 o B 0.10 A B 10 6 E E2 E3 E1 E4 1 5 SEATING PANE e B DETAI A A 0.25 M D Q C A h = D1= SEATING PANE F A1 A1 DETAI A α C 8/9

9 Information furnished is believed to be accurate and reliable. owever, SGS-TOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-TOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-TOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-TOMSON Microelectonics SGS-TOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-TOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A... 9/9

VND05B / VND05B (011Y) / VND05B (012Y) DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

VND05B / VND05B (011Y) / VND05B (012Y) DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY VND05B / VND05B (0Y) / VND05B (02Y) DOUBE CANNE IG SIDE SMART POWER SOID STATE REAY TYPE V DSS R DS(on) I n (*) V CC VND05B VND05B (0Y) VND05B (02Y) 40V 200mΩ.6A 26 V OUTPUT CURRENT (CONTINUOUS): 9A AT