VN772K-E QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS

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1 QUAD SMART POWER SOID STATE REAY FOR COMPETE BRIDGE CONFIGURATIONS Table. General Features Figure. Package Type R DS(on) I OUT V CC VN77K-E mω (*) 9A (**) 36V Note: (*) Total resistance of one side in bridge configuration Note: (**) Typical current limitation value SUITED AS OW VOTAGE BRIDGE INEAR CURRENT IMITATION VERY OW STAND-BY POWER DISSIPATION SORT CIRCUIT PROTECTED DOUBE STATUS FAG DIAGNOSTIC (OPEN DRAIN) INTEGRATED CAMPING CIRCUITS UNDERVOTAGE PROTECTION ESD PROTECTION IN COMPIANCE WIT TE /95/EC EUROPEAN DIRECTIVE DESCRIPTION The VN77K-E is a device formed by three monolithic chips housed in a standard SO-8 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower M-3 Technology. This device is suitable to drive a DC motor in a bridge configuration as well as to be used as a quad switch for any low voltage application. SO-8 The high side switches have built-in thermal shutdown to protect the chips from overtemperature and current limiter blocks to protect the device from short circuit. Status output is provided to indicate open load in off and on state and overtemperature. The low side switches are two OMNIFET II types (fully autoprotected Power MOSFET in VIPower technology). They have built-in thermal shutdown, linear current limitation and overvoltage clamping. Fault feedback for thermal intervention can be detected by monitoring the voltage at the input pin. Table. Order Codes Package Tube Tape and Reel SO-8 VN77K-E VN77KTR-E September 4 Rev. /

2 Figure. Block Diagram V cc V cc CAMP OVERVOTAGE UNDERVOTAGE GND CAMP INPUT DRIVER SOURCE DIAG INPUT OVERTEMP. OGIC CURRENT IMITER OPENOAD ON CAMP DRIVER CURRENT IMITER SOURCE OPENOAD OFF OPENOAD ON OPENOAD OFF OVERTEMP. Overvoltage Clamp DRAIN3 INPUT3 Gate Control SOURCE3 Over Temperature inear Current imiter Overvoltage Clamp DRAIN4 INPUT4 Gate Control SOURCE4 Over Temperature inear Current imiter /

3 Table 3. Pin Function No NAME FUNCTION, 3, 5, 8 DRAIN 3 Drain of Switch 3 (low-side switch) INPUT 3 Input of Switch 3 (low-side switch) 4, N.C. Not Connected 5,, 9, 4 V CC Drain of Switches and (high-side switches) and Power Supply Voltage 6 GND Ground of Switches and (high-side switches) 7 INPUT Input of Switch (high-side switches) 8 DIAGNOSTIC Diagnostic of Switches and (high-side switches) 9 INPUT Input of Switch (high-side switch), 4, 5, 8 DRAIN 4 Drain of switch 4 (low-side switch) 3 INPUT 4 Input of Switch 4 (low-side switch) 6, 7 SOURCE 4 Source of Switch 4 (low-side switch), SOURCE Source of Switch (high-side switch), 3 SOURCE Source of Switch (high-side switch) 6, 7 SOURCE 3 Source of Switch 3 (low-side switch) Figure 3. Configuration Diagram (Top View) Table 4. Thermal Data Symbol Parameter Value Unit R thj-case Thermal Resistance Junction-case (igh-side switch) MAX C/W R thj-case Thermal Resistance Junction-case (ow-side switch) MAX C/W R thj-amb Thermal Resistance Junction-ambient MAX 6 C/W 3/

4 ABSOUTE MAXIMUM RATINGS Table 5. Dual igh Side Switch Symbol Parameter Value Unit V CC DC Supply Voltage 4 V - V CC Reverse DC Supply Voltage -.3 V - I GND DC Reverse Ground Pin Current - ma I OUT DC Output Current Internally imited A - I OUT Reverse DC Output Current - 6 A I IN DC Input Current +/- ma I STAT DC Status Current +/- ma Electrostatic Discharge (uman Body Model: R=.5KΩ; C=pF) 4 V - INPUT V ESD 4 V - STATUS 5 V - OUTPUT 5 V - V CC P tot Power Dissipation T c =5 C 6 W T j Junction Operating Temperature Internally imited C T c Case Operating Temperature - 4 to 5 C T stg Storage Temperature - 55 to 5 C Table 6. ow Side Switch Symbol Parameter Value Unit V DS Drain-source Voltage (V IN =V) Internally Clamped V V IN Input Voltage Internally Clamped V I IN Input Current +/- ma R IN MIN Minimum Input Series Impedance 5 Ω I D Drain Current Internally imited A I R Reverse DC Output Current -.5 A V ESD Electrostatic Discharge (R=.5KΩ, C=pF) 4 V V ESD Electrostatic Discharge on output pin only (R=33Ω, C=5pF) 65 V P tot Power Dissipation (T C =5 C) 6 W T j Operating Junction Temperature Internally limited C 4/

5 EECTRICA CARACTERISTICS FOR DUA IG SIDE SWITC (8V<V CC <36V; -4 C< T j <5 C, unless otherwise specified) (Per each channel) Table 7. Power Outputs V CC ( ) Operating Supply Voltage V V USD ( ) Undervoltage Shut-down V V OV ( ) Overvoltage Shut-down 36 V R DS(on) I S ( ) Note: () Per device. Table 8. Switching (V CC =3V) Table 9. ogic Input Table. Status Pin On State Resistance Supply Current I OUT =A; T j =5 C I OUT =A; V CC >8V Off State; V CC =3V; V IN= V OUT =V Off State; V CC =3V; T j =5 C; V IN= V OUT =V On State; V CC =3V I (off) Off State Output Current V IN =V OUT =V; V CC =36V; T j =5 C 5 µa I (off) Off State Output Current V IN =V; V OUT =3.5V -75 µa I (off3) Off State Output Current V IN =V OUT =V; V CC =3V; T j =5 C 5 µa I (off4) Off State Output Current V IN =V OUT =V; V CC =3V; T j =5 C 3 µa t d(on) Turn-on Delay Time R =6.5Ω from V IN rising edge to V OUT =.3V 3 µs t d(off) Turn-off Delay Time R =6.5Ω from V IN falling edge to V OUT =.7V 3 µs dv OUT / dt (on) dv OUT / dt (off) Turn-on Voltage Slope Turn-off Voltage Slope R =6.5Ω from V OUT =.3V to V OUT =.4V R =6.5Ω from V OUT =.7V to V OUT =.3V 5 See relative diagram See relative diagram V I Input ow evel.5 V I I ow evel Input Current V IN =.5V µa V I Input igh evel 3.5 V I I igh evel Input Current V IN = 3.5V µa V I(hyst) Input ysteresis Voltage.5 V V IC Input Clamp Voltage I IN = ma V I IN = -ma -.7 V V STAT Status ow Output Voltage I STAT =.6 ma.5 V I STAT Status eakage Current Normal Operation; V STAT = 5V µa C STAT Status Pin Input Capacitance Normal Operation; V STAT = 5V pf V SC Status Clamp Voltage I STAT = ma V I STAT = - ma -.7 V mω mω µa µa ma V/µs V/µs 5/

6 EECTRICA CARACTERISTICS FOR DUA IG SIDE SWITC (continued) Table. Protections T TSD Shut-down Temperature 5 75 C T R Reset Temperature 35 C T hyst Thermal ysteresis 7 5 C t SD Status Delay in Overload Conditions T j >T TSD µs A I lim Current limitation T j =5 C 5.5V<V CC <36V A A V demag Turn-off Output Clamp Voltage I OUT =A; = 6m V CC -4 V CC -48 V CC -55 V Table. Openload Detection I O Openload ON State Detection Threshold V IN =5V 5 ma t DO(on) Openload ON State Detection Delay I OUT =A µs V O Openload OFF State Voltage Detection V IN =V V Threshold T DO(off) Openload Detection Delay at Turn Off µs EECTRICA CARACTERISTICS FOR OW SIDE SWITCES (-4 C < T j < 5 C, unless otherwise specified) Table 3. Off V CAMP Drain-source Clamp Voltage V IN =V; I D =3.5A V V CT Drain-source Clamp Threshold Voltage V IN =V; I D =ma 36 V V INT Input Threshold Voltage V DS =V IN ; I D =ma.5.5 V I ISS Supply Current from Input Pin V DS =V; V IN =5V 5 µa V INC Input-Source Clamp I IN =ma Voltage I IN =-ma V I DSS Zero Input Voltage Drain V DS =3V; V IN =V; T j =5 C 3 Current (V IN =V) V DS =5V; V IN =V 75 µa Table 4. On Static Drain-source On V IN =5V; I D =3.5A; T j =5 C 6 R DS(on) mω Resistance V IN =5V; I D =3.5A 6/

7 EECTRICA CARACTERISTICS FOR OW SIDE SWITCES (continued) (T j =5 C, unless otherwise specified) Table 5. Dynamic g fs (*) Forward Transconductance V DD =3V; I D =3.5A 9 S C OSS Output Capacitance V DS =3V; f=mz; V IN =V pf Table 6. Switching t d(on) Turn-on Delay Time 3 ns t r Rise Time V DD =5V; I D =3.5A 47 5 ns t d(off) Turn-off Delay Time V gen =5V; R gen =R IN MIN =5Ω 5 5 ns t f Fall Time 35 ns t d(on) Turn-on Delay Time.75.3 µs t r Rise Time V DD =5V; I D =3.5A µs t d(off) Turn-off Delay Time V gen =5V; R gen =.KΩ µs t f Fall Time 3.6. µs (di/dt) on Turn-on Current Slope V DD =5V; I D =3.5A V gen =5V; R gen =R IN MIN =5Ω 6.5 A/µs Q i Total Input Charge V DD =V; I D =3.5A; V IN =5V I gen =.3mA 8 nc Table 7. Source Drain Diode V SD (*) Forward On Voltage I SD =3.5A; V IN =V.8 V t rr Reverse Recovery Time ns I SD =3.5A; di/dt=a/µs Q rr Reverse Recovery Charge.8 µc V DD =3V; =µ I RRM Reverse Recovery Current.5 A Note: (*) Pulsed: Pulse duration = 3µs, duty cycle.5% Table 8. Protections (-4 C < T j < 5 C, unless otherwise specified) V IN =5V; V DS =3V 6 9 A I lim Drain Current imit V IN =5V; V DS =3V; T j =5 C 6.5 A t dlim Step Response Current imit V IN =5V; V DS =3V 4. µs T jsh Overtemperature Shutdown 5 75 C T jrs Overtemperature Reset 35 C I gf Fault Sink Current V IN = 5V; V DS =3V; T j =T jsh 5 ma E as Single Pulse starting T j =5 C; V DD =4V Avalanche Energy V IN =5V; R gen =R IN MIN =5Ω; =4m mj 7/

8 DUA IG-SIDE SWITC Figure 4. Switching Time Waveforms V OUTn 8% 9% dv OUT /dt (on) dv OUT /dt (off) % t V INn t d(on) t d(off) t Table 9. Truth Table Figure 5. CONDITIONS INPUT OUTPUT STATUS Normal Operation Current imitation Overtemperature Undervoltage Overvoltage Output Voltage > V O Output Current < I O X X (T j < T TSD ) (T j > T TSD ) X X OPEN OAD STATUS TIMING (with external pull-up) VOUT > V O I OUT < I O V INn V INn OVER TEMP STATUS TIMING T j > T TSD V STAT n V STAT n t SD t SD t DO(off) t DO(on) 8/

9 Figure 6. Typical Application Diagram 9/

10 Figure 7. Waveforms NORMA OPERATION INPUT n OUTPUT VOTAGE n STATUS n UNDERVOTAGE V CC V USDhyst INPUT n V USD OUTPUT VOTAGE n STATUS n undefined OVERVOTAGE V CC <V OV V CC >V OV V CC INPUT n OUTPUT VOTAGE n STATUS n OPEN OAD with external pull-up INPUT n OUTPUT VOTAGE n STATUS n OPEN OAD without external pull-up INPUT n OUTPUT VOTAGE n STATUS n V O V OUT>V O T j INPUT n T TSD T R OVERTEMPERATURE OUTPUT CURRENT n STATUS n /

11 Electrical Characterization For Dual igh Side Switch Figure 8. Off State Output Current Figure. Input Clamp Voltage I(off) (ua).5 Vicl (V) Off state Vcc=36V Vin=Vout=V Iin=mA Figure 9. igh evel Input Current Iih (ua) Figure. Input igh evel Vih (V) Vin=3.5V Figure. Input ow evel Vil (V) Figure 3. Input ysteresis Voltage Vhyst (V) /

12 Electrical Characterization For Dual igh Side Switch (continued) Figure 4. Overvoltage Shutdown Figure 7. I IM Vs T case Vov (V) Ilim (A) Vcc=3V Figure 5. Turn-on Voltage Slope dvout/dt(on) (V/ms) Figure 8. Turn-off Voltage Slope dvout/dt(off) (V/ms) Vcc=3V Rl=6.5Ohm 55 5 Vcc=3V Rl=6.5Ohm Tc (ºC) Figure 6. On State Resistance Vs T case Tc (ºC) Figure 9. On State Resistance Vs V CC Ron (mohm) Iout=A Vcc=8V; 3V & 36V Ron (mohm) Tc=5 C Tc=5 C Tc= - 4 C Iout=5A Vcc (V) /

13 Electrical Characterization For Dual igh Side Switch (continued) Figure. Status eakage Current Figure 3. Status ow Output Voltage Ilstat (ua).5 Vstat (V).8.4 Vstat=5V.7.6 Istat=.6mA Figure. Openload On State Detection Threshold Iol (ma) Figure 4. Openload Off State Voltage Detection Threshold Vol (V) Vcc=3V Vin=V Tc (ºC) Figure. Status Clamp Voltage Vscl (V) Istat=mA /

14 Electrical Characterization For ow Side Switches Figure 5. Static Drain Source On Resistance Figure 8. Derating Curve Rds(on) (mohm) Tj= - 4ºC Vin=.5V Tj=5ºC Tj=5ºC Id(A) Figure 6. Transconductance Gfs (S) Figure 9. Transfer Characteristics Idon(A) Vds=3V Tj=-4ºC Tj=5ºC Tj=5ºC Vds=3.5V Tj=5ºC Tj=-4ºC Tj=5ºC Id(A) Vin(V) Figure 7. Turn On Current Slope di/dt(a/us) 8 Figure 3. Turn On Current Slope di/dt(a/us) Vdd=5V Id=3.5A.75.5 Vin=3.5V Vdd=5V Id=3.5A Rg(ohm) Rg(ohm) 4/

15 Electrical Characterization For ow Side Switches (continued) Figure 3. Input Voltage Vs. Input Charge Vin(V) 8 Figure 34. Capacitance Variations C(pF) Vds=V Id=3.5A 5 f=mz Vin=V Qg(nC) Vds(V) Figure 3. Switching Time Resistive oad Figure 35. Switching Time Resistive oad t(us) t(ns) Vdd=5V Id=3.5A td(off) tr tf 6 4 tr Vdd=5V Id=3.5A Rg=5ohm td(on) Rg(ohm) Figure 33. Output Characteristics ID(A) 6 td(off) 4 tf td(on) Vin(V) Figure 36. Step Response Current imit Tdlim(us) Vin=4.5V Vin=4V Rg=5ohm 7 6 Vin=3V Vin=.5V Vin=V VDS(V) Vdd(V) 5/

16 Electrical Characterization For ow Side Switches (continued) Figure 37. Source-Drain Diode Forward Characteristics Figure 4. Static Drain-Source On Resistance Vs. Id Vsd (mv) Rds(on) (mohm) Vin=V Vin=3.5V Tj=5ºC Tj=5ºC Tj=-4ºC Vin=3.5V Vin=3.5V Id(A) Figure 38. Static Drain-Source On resistance Vs. Input Voltage Rds(on) (mohm) Tj=5ºC Tj=5ºC Tj=-4ºC Vin(V) Id=6A Id=A Id=6A Id=A Id=6A Id=A Figure 39. Normalized Input Threshold Voltage Vs. Temperature Vin(th) Id(A) Figure 4. Static Drain-Source On resistance Vs. Input Voltage Rds(on) (mohm) Vin(V) Figure 4. Normalized On Resistance Vs. Temperature Rds(on).5 Id=3.5A Tj=5ºC Tj=5ºC Tj= - 4ºC..5 Vds=Vin Id=mA.75 Id=3.5A T(ºC) T(ºC) 6/

17 Electrical Characterization For ow Side Switches (continued) Figure 43. Turn off drain source voltage slope Figure 45. Turn off drain source voltage slope dv/dt(v/us) dv/dt(v/us) Vin=3.5V Vdd=5V Id=3.5A Vdd=5V Id=3.5A Rg(ohm) Rg(ohm) Figure 44. Current imit Vs. Junction Temperature Ilim (A) Vds=3V Tj (ºC) 7/

18 Table. SO-8 Mechanical Data Symbol millimeters Min Typ Max A.65 a..3 b b.3.3 C.5 c 45 (typ.) D E..65 e.7 e3 6.5 F S 8 (max.) Figure 46. SO-8 Package Dimensions 8/

19 Figure 47. SO-8 Tube Shipment (No Suffix) C B Base Q.ty 8 Bulk Q.ty 7 Tube length (±.5) 53 A 3.5 B 3.8 C (±.).6 A All dimensions are in mm. Figure 48. Tape And Reel Shipment (Suffix TR ) REE DIMENSIONS Base Q.ty Bulk Q.ty A (max) 33 B (min).5 C (±.) 3 F. G (+ / -) 6.4 N (min) 6 T (max).4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 48 rev. A, Feb. 986 Tape width W 6 Tape ole Spacing P (±.) 4 Component Spacing P ole Diameter D (±./-).5 ole Diameter D (min).5 ole Position F (±.5) 7.5 Compartment Depth K (max) 6.5 ole Spacing P (±.) All dimensions are in mm. End Start Top cover tape No components 5mm min Components Empty components pockets saled with cover tape. No components 5mm min User direction of feed 9/

20 REVISION ISTORY Date Revision Description of Changes Sep. 4 - First Issue. /

21 Information furnished is believed to be accurate and reliable. owever, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 4 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - ong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America /

VNB14NV04 / VND14NV04 / VND14NV04-1/ VNP14NV04/ VNS14NV04

VNB14NV04 / VND14NV04 / VND14NV04-1/ VNP14NV04/ VNS14NV04 VNB4NV4 / VND4NV4 / VND4NV4-/ VNP4NV4/ VNS4NV4 OMNIFET II : FULLY AUTOPROTECTED POWER MOSFET TYPE R DS(on) I lim V clamp VNB4NV4 VND4NV4 VND4NV4- VNP4NV4 VNS4NV4 35 mω A 4 V 3 TO-5 (DPAK) SO-8 LINEAR CURRENT