PRELIMINARY DATA TYPE V DSS R DS(on) I D STW8NB V < 1.5 Ω 8 A

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1 STW8NB100 N - CHNNEL 1000V - 1.2Ω TO-247 PowerMESH MOSFET PRELIMINRY DT TYPE V DSS R DS(on) I D STW8NB V < 1.5 Ω 8 TYPICL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CPBILITY ± 30V GTE TO SOURCE VOLTGE RTING 100% VLNCHE TESTED LOW INTRINSIC CPCITNCE GTE CHRGE MINIMIZED REDUCED VOLTGE SPRED DESCRIPTION Using the latest high voltage MESH OVERLY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. TO-247 INTERNL SCHEMTIC DIGRM PPLICTIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLY (SMPS) DC-C CONVERTER FOR WELDING EQUIPMENT ND UNINTERRUPTBLE POWER SUPPLY ND MOTOR DRIVE BSOLUTE MXIMUM RTINGS Symbol Parameter Value Unit V DS Drain-source Voltage (V GS = 0) 1000 V V DGR Drain- gate Voltage (R GS = 20 kω) 1000 V V GS Gate-source Voltage ± 30 V I D Drain Current (continuous) at T c = 25 8 I D Drain Current (continuous) at T c = I DM ( ) Drain Current (pulsed) P tot Total Dissipation at T c = W Derating Factor 1.52 W/ dv/dt(1) Peak Diode Recovery voltage slope 4 V/ T stg Storage Temperature -65 to 150 T j Max. Operating Junction Temperature 150 ( ) Pulse width limited by safe operating area (1) ISD 8 Α, di/dt 200 /µs, VDD V(BR)DSS, Tj TJMX March /5

2 THERML DT R thj-case R thj-amb R thc-sink T l Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ /W /W /W VLNCHE CHRCTERISTICS Symbol Parameter Max Value Unit I R valanche Current, Repetitive or Not-Repetitive 8 (pulse width limited by T j max) E S Single Pulse valanche Energy (starting T j = 25, I D = I R, V DD = 50 V) 600 mj ELECTRICL CHRCTERISTICS (Tcase = 25 unless otherwise specified) OFF V (BR)DSS Drain-source Breakdown Voltage I D = 250 µ V GS = V I DSS Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating V DS = Max Rating T c = µ µ I GSS Gate-body Leakage Current (V DS = 0) V GS = ± 30 V ± 100 n ON ( ) V GS(th) Gate Threshold Voltage V DS = V GS I D = 250 µ V R DS(on) Static Drain-source On Resistance I D = Ω I D(on) On State Drain Current V DS > I D(on) x R DS(on)max 8 DYNMIC g fs ( ) Forward Traconductance V DS > I D(on) x R DS(on)max I D = S C iss C oss C rss Input Capacitance Output Capacitance Reverse Trafer Capacitance V DS = 25 V f = 1 MHz V GS = /5

3 ELECTRICL CHRCTERISTICS (continued) SWITCHING ON t d(on) t r Turn-on Time Rise Time V DD = 500 V R G = 4.7 Ω I D = Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 800 V I D = nc nc nc SWITCHING OFF t r(voff) t f t c Off-voltage Rise Time Fall Time Cross-over Time V DD = 800 V R G = 4.7 Ω I D = 7 40 SOURCE DRIN DIODE I SD I SDM ( ) Source-drain Current Source-drain Current (pulsed) V SD ( ) Forward On Voltage I SD = 8 V GS = V t rr Reverse Recovery I SD = 8 di/dt = 100 /µs 1000 Q rr I RRM Time Reverse Recovery Charge Reverse Recovery Current V DD = 100 V T j = µc ( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( ) Pulse width limited by safe operating area 8 3/5

4 TO-247 MECHNICL DT DIM. mm inch MIN. TYP. MX. MIN. TYP. MX D E F F F G H L L L L M Dia P025P 4/5

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