2N4401 & 2N4403 General Purpose Switching Transistors

Transcription

1 Features: NPN/PNP Silicon Planar Epitaxial Transistors. General purpose Switching Applications. 2N 4401 Type NPN. 2N 4403 Type PNP. 2N4401 NPN TO92 2N4403 PNP Dimensions Minimum Maximum A B C D E F 5 G H 1.53 K L Dimensions : Millimetres Pin Configuration 1 = Emitter 2 = Base 3 = Collector Page 1 31/05/05 V1.0

2 Absolute Maximum Ratings Parameters Symbol 2N4401 2N4403 Unit Collector Emitter Voltage V CEO 40 Collector Base Voltage V CBO V Emitter Base Voltage V EBO 6 5 Collector Current Continuous I C 600 ma Power Dissipation at T a = 25 C Derate above 25 C Power Dissipation at T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range P D mw mw/ C W W/ C T j, T stg 55 to +150 C Thermal Resistance Junction to Case Rth (jc) 83.3 Junction to Ambient Rth (ja) 200 C/W Electrical Characteristics (T a = 25 C unless otherwise specified) Parameters Symbol Test Condition 2N4401 2N4403 Unit Collector Emitter Voltage BV CEO* I C = 1mA, IB = 0 >40 Collector Base Voltage BV CBO IC = 100µA, I E = 0 >60 >40 V Emitter Base Voltage BV EBO I E = 100µA, I C = 0 >6 >5 Base Cut off Current I BEV V CE = 35V, V EB = 0.4V Collector Cut off Current I CEX V CE = 35V, V EB = 0.4V Collector Emitter Saturation Voltage V CE(Sat)* I C = 150mA, I B = 15mA I C = 500mA, I B = 50mA Base Emitter Saturation Voltage V BE(Sat) * I C = 150mA, I B = 15mA I C = 500mA, I B = 50mA h FE I C = 0.1mA, V CE = 1V I C = 1mA, V CE = 1V I C = 10mA, V CE = 1V I C = 150mA, V CE = 1V* I C = 150mA, V CE = 2V* I C = 500mA, V CE = 2V* <0.1 <0.1 µa <0.4 < <1.2 >20 >40 > >40 <0.4 <0.75 V <1.3 >30 >60 > >20 Dynamic Characteristics Small Signal Current Gain h fe I C = 1mA, V CE = 10V, f = 1kHz Input Impedance h ie I C = 1mA, V CE = 10V, f = 1kHz kω *Pulse Test : Pulse Width: 300µs, Duty 2.0% Page 2 31/05/05 V1.0

3 Electrical Characteristics (T a = 25 C unless otherwise specified) Parameters Symbol Test Condition 2N4401 2N4403 Unit Voltage Feedback Ratio h re I C = 1mA, V CE = 10V, f = 1kHz x10 4 Output Impedance h oe I C = 1mA, V CE = 10V, f = 1kHz µω CollectorBase Capacitance C cb V CB = 5V, I E = 0, f = 100kHz V CB = 10V, I E = 0, f = 140kHz EmitterBase Capacitance C eb V EB = 0.5V, I C = 0, f = 100kHz V EB = 0.5V, I C = 0, f = 140kHz Transition Frequency f T I C = 20mA, V CE = 10V, f = 100MHz >250 >200 MHz Switching Characteristics Delay Time t d V CC = 30V, V EB = 2V <15 Rise Time t r I C = 150mA, I B1 = 15mA <20 Storage time t s V CC = 30V, I C = 150mA <225 Fall Time t f I B1 = I B2 = 15mA <30 <6.5 <30 <8.5 <30 pf ns V CE, CollectorEmitter Voltage (V) h FE (Normalized) I B Base Current (ma) Page 3 31/05/05 V1.0

4 On Voltages V CE, CollectorEmitter Voltage (V) h FE (Normalized) Voltage (V) Collector Saturation Region I B Base Current (ma) Page 4 31/05/05 V1.0

5 On Voltages Voltage (V) Specifications V CEO maximum (V) V CBO maximum (V) I C (A) h FE minimum at I C = 1mA f T minimum (MHz) P tot (mw) Package and Pin Out Type Part Number NPN 2N TO PNP 2N4403 Page 5 31/05/05 V1.0

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