TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

Transcription

1 PN98 Discrete POWER & Signal Technologies MMBT98 C C B E TO-92 SOT-23 Mark: 3B B E This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the.0 ma to 30 ma range. Sourced from Process 43. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units V CEO Collector-Emitter Voltage 5 V V CBO Collector-Base Voltage 30 V V EBO Emitter-Base Voltage 3.0 V I C Collector Current - Continuous 50 ma T J, T stg Operating and Storage Junction Temperature Range -55 to +50 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: ) These ratings are based on a maximum junction temperature of 50 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25 C unless otherwise noted Symbol Characteristic Max Units PN98 *MMBT98 P D Total Device Dissipation Derate above 25 C mw mw/ C RθJC Thermal Resistance, Junction to Case /W RθJA Thermal Resistance, Junction to Ambient C/W *Device mounted on FR-4 PCB.6" X.6" X 0.06." 997 Fairchild Semiconductor Corporation

2 Electrical Characteristics TA = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V CEO(sus) Collector-Emitter Sustaining Voltage* I C = 3.0 ma, I B = 0 5 V V (BR)CBO Collector-Base Breakdown Voltage I C =.0 µa, I E = 0 30 V V (BR)EBO Emitter-Base Breakdown Voltage I E = 0 µa, I C = V I CBO Collector Cutoff Current V CB = 5 V, I E = 0 V CB = 5 V, T A = 50 C µa µa ON CHARACTERISTICS h FE DC Current Gain I C = 3.0 ma, V CE =.0 V 20 V CE(sat) Collector-Emitter Saturation Voltage I C = 0 ma, I B =.0 ma 0.4 V V BE(sat) Base-Emitter Saturation Voltage I C = 0 ma, I B =.0 ma.0 V SMALL SIGNAL CHARACTERISTICS f T Current Gain - Bandwidth Product I C = 4.0 ma, V CE = 0 V, f = 00 MHz 600 MHz C obo Output Capacitance V CB = 0 V, I E = 0, f =.0 MHz V CB = 0, I E = 0, f =.0 MHz pf pf C ibo Input Capacitance V BE = 0.5 V, I C = 0, f =.0 MHz 2.0 pf NF Noise Figure I C =.0 ma, V CE = 6.0 V, R G = 400Ω, f = 60 MHz 6.0 db FUNCTIONAL TEST G pe Amplifier Power Gain V CB = 2 V, I C = 6.0 ma, f = 200 MHz P O Power Output V CB = 5 V, I C = 8.0 ma, f = 500 MHz η Collector Efficiency V CB = 5 V, I C = 8.0 ma, f = 500 MHz 5 db 30 mw 25 % *Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%

3 DC Typical Characteristics h - TYPICAL PULSED CURRENT GAIN FE Typical Pulsed Current Gain vs Collector Current Vce = 5V I C - COLLECTOR CURRENT (ma) V - COLLECTOR-EMITTER VOLTAGE (V) CESAT Collector-Emitter Saturation Voltage vs Collector Current β = I C - COLLECTOR CURRENT (ma) V - BASE-EMITTER VOLTAGE (V) BESAT Base-Emitter Saturation Voltage vs Collector Current β = I - COLLECTOR CURRENT (ma) C V - BASE-EMITTER ON VOLTAGE (V) BE(ON) Base-Emitter ON Voltage vs Collector Current V CE = 5V I C - COLLECTOR CURRENT (ma) I CBO - COLLECTOR CURRENT (na) 5 V Collector-Cutoff Current vs Ambient Temperature CB = 20V T - AMBIENT TEMPERATURE ( A C)

4 AC Typical Characteristics CAPACITANCE (pf) 00 0 Input and Output Capacitance vs Reverse Voltage Cib f =.0 MHz Cob V ce - COLLECTOR VOLTAGE(V) f T - GAIN BANDWIDTH PRODUCT (MHz) Gain Bandwidth Product vs Collector Current V ce= 5V I - COLLECTOR CURRENT (ma) C Contours of Constant Gain Bandwidth Product (f T ) Contours of Constant Noise Figure Small Signal Current Gain vs. Collector Current P - POWER DISSIPATION (mw) D POWER DISSIPATION vs AMBIENT TEMPERATURE SOT-23 TO TEMPERATURE ( C)

5 Common Emitter Y Parameters vs. Frequency Input Admittance vs. Collector Current-Output Short Circuit Input Admittance vs. Collector Current-Output Short Circuit Input Admittance vs. Frequency-Output Short Circuit Forward Transfer Admittance vs. Frequency-Output Open Circuit Forward Transfer Admittance vs. Collector Current-Output Short Circuit Forward Transfer Admittance vs. Collector Current-Output Short Circuit

6 Common Emitter Y Parameters vs. Frequency Reverse Transfer Admittance vs. Collector Current-Input Short Circuit Reverse Transfer Admittance vs. Collector Current-Input Short Circuit Reverse Transfer Admittance vs. Frequency-Input Short Circuit Output Admittance vs. Collector Current-Input Short Circuit Output Admittance vs. Collector Current-Input Short Circuit Output Admittance vs. Frequency-Input Short Circuit

7 Test Circuit (NOTE 2) 50 pf 75 pf 500 mhz Output into 50Ω RFC (NOTE ) NOTE : 2 turns No. 6 AWG wire, 3/8 inch OD, /4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/6 inch OD, /2 inch long 000 pf 000 pf 2.2 KΩ RFC - V CC V CC FIGURE : 500 MHz Oscillator Circuit